TEXAS INSTRUMENTS TPA6100A2D Technical data
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1
2
3
4
8
7
6
5
BYPASS
GND
SHUTDOWN
IN2–
IN1–
V
O
1
V
DD
VO2
DGK PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
BYPASS
GND
SHUTDOWN
IN2–
IN1–
VO1
V
DD
VO2
D PACKAGE
(TOP VIEW)
Audio
Input
Bias
Control
6
7
5
2
VO1
VO2
V
DD
3
8
1
4
IN1−
BYPASS
SHUTDOWN
VDD/4
C
I
R
I
R
F
C
B
C
S
Audio
Input
C
I
R
I
IN2−
R
F
V
DD
From Shutdown
Control Circuit
−
+
−
+
C
C
C
C
R
R
50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER
FEATURES
• 50-mW Stereo Output
• Low Supply Current . . . 0.75 mA
• Low Shutdown Current . . . 50 nA
• Pin Compatible With LM4881 and TPA102
• Pop Reduction Circuitry
• Internal Midrail Generation
• Thermal and Short-Circuit Protection
• Surface-Mount Packaging
– MSOP and SOIC
• 1.6-V to 3.6-V Supply Voltage Range
(1) The polarity of the SHUTDOWN pin is reversed.
(1)
TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
DESCRIPTION
The TPA6100A2D is a stereo audio power amplifier packaged in either an 8-pin SOIC package or an 8-pin
MSOP package capable of delivering 50 mW of continuous RMS power per channel into 16- Ω loads. Amplifier
gain is externally configured by a means of three resistors per input channel and does not require external
compensation for settings of 1 to 10.
The TPA6100A2D is optimized for battery applications because of its low supply current, shutdown current, and
THD+N. To obtain the low-supply voltage range, the TPA6100A2D biases BYPASS to V
resistance equal to R
must be added from the inputs to ground to allow the output to be biased at V
F
When driving a 16- Ω load with 45-mW output power from 3.3 V, THD+N is 0.04% at 1 kHz, and less than 0.2%
across the audio band of 20 Hz to 20 kHz. For 28 mW into 32- Ω loads, the THD+N is reduced to less than 0.03%
at 1 kHz, and is less than 0.2% across the audio band of 20 Hz to 20 kHz.
TYPICAL APPLICATION CIRCUIT
Copyright © 2000–2004, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
/4. A resistor with a
DD
/2.
DD
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TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
T
A
SMALL OUTLINE (D) MSOP(DGK)
PACKAGED DEVICE
–40 ° C to 85 ° C TPA6100A2D TPA6100A2DGK AJL
Terminal Functions
TERMINAL
NAME NO.
BYPASS 1 I Tap to voltage divider for internal mid-supply bias supply. BYPASS is set at VDD/4. Connect to a 0.1-µF
GND 2 I GND is the ground connection.
IN1- 8 I IN1- is the inverting input for channel 1.
IN2- 4 I IN2- is the inverting input for channel 2.
SHUTDOWN 3 I Active-low input. When held low, the device is placed in a low supply current mode.
V
DD
VO1 7 O VO1 is the audio output for channel 1.
VO2 5 O VO2 is the audio output for channel 2.
I/O DESCRIPTION
to 1-µF low-ESR capacitor for best performance.
6 I V
is the supply voltage terminal.
DD
MSOP
SYMBOLIZATION
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
V
Supply voltage 4 V
DD
V
Input voltage –0.3 V to V
I
Continuous total power dissipation Internally limited
T
Operating junction temperature range –40 ° C to 150 ° C
J
T
Storage temperature range –65 ° C to 150 ° C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 ° C
(1) Stresses beyond thoselisted under "absolute maximum ratings” may cause permanent damage to thedevice. These are stress ratings
only, and functional operation of the deviceat these or any other conditions beyond those indicated under "recommendedoperating
conditions” is not implied. Exposure to absolute-maximum-ratedconditions for extended periods may affect devicereliability.
(1)
UNIT
+ 0.3 V
DD
DISSIPATION RATING TABLE
PACKAGE
D 710 mW 5.68 mW/ ° C 454 mW 369 mW
DGK 469 mW 3.75 mW/ ° C 300 mW 244 mW
TA≤ 25 ° C DERATING FACTOR TA= 70 ° C TA= 85 ° C
POWER RATING ABOVE TA= 25 ° C POWER RATING POWER RATING
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
Supply voltage 1.6 3.6 V
DD
T
Operating free-air temperature –40 85 ° C
A
V
High-level input voltage SHUTDOWN 0.6 x V
IH
V
Low-level input voltage SHUTDOWN 0.25 x V
IL
DD
V
DD
2
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TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
DC ELECTRICAL CHARACTERISTICS
at TA= 25 ° C, V
V
OO
PSRR Power supply rejection ratio V
I
DD
I
DD(SD)
|IIH| High-level input current ( SHUTDOWN) V
|IIL| Low-level input current ( SHUTDOWN) V
Z
I
AC OPERATING CHARACTERISTICS
V
= 3.3 V, TA= 25 ° C, RL= 16 Ω
DD
P
THD+N Total harmonic distortion + noise PO= 45 mW, 20 Hz–20 kHz 0.2%
B
k
SVR
SNR Signal-to-noise ratio PO= 50 mW 90 dB
V
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 50 mW
O
Maximum output power BW G = 1, THD < 0.5% > 20 kHz
OM
Supply ripple rejection f = 1 kHz 52 dB
Noise output voltage (no noise-weighting filter) 28 µV(rms)
n
= 3.6 V (Unless otherwise noted)
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output offset voltage AV= 2 V/V 5 40 mV
= 3.0 V to 3.6 V 72 dB
DD
Supply current SHUTDOWN = 3.6 V 0.75 2.0 mA
Supply current in SHUTDOWN mode SHUTDOWN = 0 V 50 250 nA
= 3.6 V, VI= V
DD
= 3.6 V, VI= 0 V 1 µA
DD
DD
Input impedance (IN1-, IN2-) > 1 M Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
1 µA
AC OPERATING CHARACTERISTICS
V
= 3.3 V, TA= 25 ° C, RL= 32 Ω
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P
O
THD+N Total harmonic distortion + noise PO= 30 mW, 20 Hz–20 kHz 0.2%
B
OM
k
SVR
SNR Signal-to-noise ratio PO= 35 mW 91 dB
V
n
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 35 mW
Maximum output power BW G = 1, THD < 0.2% > 20 kHz
Supply ripple rejection f = 1 kHz 52 dB
Noise output voltage (no noise-weighting filter) 28 µV(rms)
3
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TPA6100A2D
SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004
DC ELECTRICAL CHARACTERISTICS
at TA= 25 ° C, V
V
PSRR Power supply rejection ratio V
I
DD
I
DD(SD)
|IIH| High-level input current ( SHUTDOWN) V
|IIL| Low-level input current ( SHUTDOWN) V
Z
Output offset voltage AV= 2 V/V 5 40 mV
OO
Supply current SHUTDOWN = 1.6 V 1.2 1.5 mA
Supply current in SHUTDOWN mode SHUTDOWN = 0 V 50 250 nA
Input impedance (IN1-, IN2-) > 1 M Ω
I
AC OPERATING CHARACTERISTICS
V
= 1.6 V, TA= 25 ° C, RL= 16 Ω
DD
P
O
THD+N Total harmonic distortion + noise PO= 9.5 mW, 20 Hz–20 kHz 0.4%
B
OM
k
SVR
SNR Signal-to-noise ratio PO= 9.5 mW 86 dB
V
n
= 1.6 V (Unless otherwise noted)
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
= 1.5 V to 1.7 V 80 dB
DD
= 1.6 V, VI= V
DD
= 1.6 V, VI= 0 V 1 µA
DD
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 9.5 mW
Maximum output power BW G = 0 dB, THD < 0.4% > 20 kHz
Supply ripple rejection f = 1 kHz 53 dB
Noise output voltage (no noise-weighting filter) 18 µV(rms)
1 µA
AC OPERATING CHARACTERISTICS
V
= 1.6 V, TA= 25 ° C, RL= 32 Ω
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P
O
THD+N Total harmonic distortion + noise PO= 6.5 mW, 20 Hz–20 kHz 0.3%
B
OM
k
SVR
SNR Signal-to-noise ratio PO= 7.1 mW 88 dB
V
n
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 7.1 mW
Maximum output power BW G = 0 dB, THD < 0.3% > 20 kHz
Supply ripple rejection f = 1 kHz 53 dB
Noise output voltage (no noise-weighting filter) 18 µV(rms)
4
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