1
2
3
4
8
7
6
5
SHUTDOWN
BYPASS
IN+
IN–
VO2
GND
V
DD
VO1
D PACKAGE
(TOP VIEW)
Audio
Input
Bias
Control
V
DD
1 W
6
5
8
7
VO1
VO2
V
DD
1
2
34IN+
IN–
BYPASS
SHUTDOWN
VDD/2
C
I
R
I
R
F
C
S
C
B
–
+
–
+
GND
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
1-W MONO AUDIO POWER AMPLIFIER
FEATURES
• 1-W BTL Output (5 V, 0.11 % THD+N)
• 3.3-V and 5-V Operation
• No Output Coupling Capacitors Required
• Shutdown Control (I
• Uncompensated Gains of 2 to 20 (BTL Mode)
• Surface-Mount Packaging
• Thermal and Short-Circuit Protection
• High Supply Ripple Rejection Ratio (56 dB at
1 kHz)
• LM4861 Drop-In Compatible
DESCRIPTION
The TPA4861 is a bridge-tied load (BTL) audio power amplifier capable of delivering 1 W of continuous average
power into an 8-Ω load at 0.2% THD+N from a 5-V power supply in voiceband frequencies (f < 5 kHz). A BTL
configuration eliminates the need for external coupling capacitors on the output in most applications. Gain is
externally configured by means of two resistors and does not require compensation for settings of 2 to 20.
Features of the amplifier are a shutdown function for power-sensitive applications as well as internal thermal and
short-circuit protection. The TPA4861 works seamlessly with TI's TPA4860 in stereo applications. The amplifier
is available in an 8-pin SOIC surface-mount package that reduces board space and facilitates automated
assembly.
DD
= 0.6 µA)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1996–2004, Texas Instruments Incorporated
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
T
A
–40°C to 85°C TPA4861D
(1) The D package is available tape and reeled. To order a tape and reeled part, add the suffix R to the part number (e.g., TPA4861DR).
Terminal Functions
TERMINAL
NAME NO.
BYPASS 2 I
GND 7 GND is the ground connection.
IN- 4 I IN- is the inverting input. IN- is typically used as the audio input terminal.
IN+ 3 I IN+ is the noninverting input. IN+ is typically tied to the BYPASS terminal.
SHUTDOWN 1 I SHUTDOWN places the entire device in shutdown mode when held high (I
VO1 5 O VO1 is the positive BTL output.
VO2 8 O VO2 is the negative BTL output.
V
DD
I/O DESCRIPTION
BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a
0.1-µF – 1.0-µF capacitor when used as an audio power amplifier.
6 V
is the supply voltage terminal.
DD
PACKAGED DEVICE
SMALL OUTLINE
(1)
DD
(D)
~ 0.6 µA).
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
V
V
T
T
T
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
Supply voltage 6 V
DD
Input voltage –0.3 V to V
I
Continuous total power dissipation Internally Limited (see Dissipation Rating Table)
Operating free-air temperature range –40°C to 85°C
A
Operating junction temperature range –40°C to 150°C
J
Storage temperature range –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
UNIT
+0.3 V
DD
DISSIPATION RATING TABLE
PACKAGE TA≤ 25°C DERATING FACTOR TA= 70°C TA= 85°C
D 725 mW 5.8 mW/°C 464 mW 377 mW
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
Supply voltage 2.7 5.5 V
DD
V
= 3 V 1.25 2.7 V
V
Common-mode input voltage
IC
T
Operating free-air temperature –40 85 °C
A
DD
V
= 5 V 1.25 4.5 V
DD
2
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
ELECTRICAL CHARACTERISTICS
at specified free-air temperature, V
PARAMETER TEST CONDITIONS UNIT
V
PSRR Power supply rejection ratio (∆VDD/∆V
I
DD
I
DD(SD)
(1) At 3 V < V
Output offset voltage See
OO
Supply current 2.5 mA
Supply current, shutdown 0.6 µA
< 5 V the dc output voltage is approximately VDD/2.
DD
= 3.3 V (unless otherwise noted)
DD
) V
OO
MIN TYP MAX
(1)
= 3.2 V to 3.4 V 75 dB
DD
OPERATING CHARACTERISTICS
V
= 3.3 V, TA= 25°C, RL= 8 Ω
DD
PARAMETER TEST CONDITIONS UNIT
P
Output power
O
B
Maximum output power bandwidth Gain = –10 V/V, THD = 2% 20 kHz
OM
B
Unity-gain bandwidth Open Loop 1.5 MHz
1
Supply ripple rejection ratio
V
Noise output voltage
n
(1)
BTL f = 1 kHz, CB= 0.1 µF 56 dB
SE f = 1 kHz, CB= 0.1 µF 30 dB
(2)
THD = 0.2%, f = 1 kHz, AV= –2 V/V 400 mW
THD = 2%, f = 1 kHz, AV= –2 V/V 500 mW
Gain = –2 V/V 20 µV
(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.
MIN TYP MAX
TPA4861
TPA4861
20 mV
TPA4861
ELECTRICAL CHARACTERISTICS
at specified free-air temperature range, V
PARAMETER TEST CONDITION UNIT
V
PSRR Power supply rejection ratio (∆VDD/∆V
I
DD
I
DD(SD)
(1) At 3 V < V
Output offset voltage See
OO
Supply current 3.5 mA
Supply current, shutdown 0.6 µA
< 5 V the dc output voltage is approximately VDD/2.
DD
= 5 V (unless otherwise noted)
DD
) V
OO
OPERATING CHARACTERISTICS
V
= 5 V, TA= 25°C, RL= 8 Ω
DD
PARAMETER TEST CONDITIONS UNIT
P
B
B
Output power
O
Maximum output power bandwidth Gain = -10 V/V, THD = 2% 20 kHz
OM
Unity-gain bandwidth Open Loop 1.5 MHz
1
Supply ripple rejection ratio
V
Noise output voltage
n
(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.
(1)
BTL f = 1 kHz, CB= 0.1 µF 56 dB
SE f = 1 kHz, CB= 0.1 µF 30 dB
(2)
TPA4861
MIN TYP MAX
(1)
= 4.9 V to 5.1 V 70 dB
DD
20 mV
TPA4861
MIN TYP MAX
THD = 0.2%, f = 1 kHz, AV= -2 V/V 1000 mW
THD = 2%, f = 1 kHz, AV= -2 V/V 1100 mW
Gain = -2 V/V 20 µV
3
Number of Amplifiers
20
10
0
VOO − Output Offset Voltage − mV
25
15
5
−4 −3 −2 −1 0 1 2 3 4 5 6
VDD = 3.3 V
30
Number of Amplifiers
20
10
0
VOO − Output Offset Voltage − mV
25
15
5
VDD = 5 V
−4 −3 −2 −1 0 1 2 3 4 5 6
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
V
OO
I
DD
THD+N Total harmonic distortion plus noise
I
DD
V
n
k
SVR
Output offset voltage Distribution 1, 2
Supply current distribution vs Free-air temperature 3, 4
Supply current vs Supply voltage 22
Output noise voltage vs Frequency 23, 24
Maximum package power dissipation vs Free-air temperature 25
Power dissipation vs Output power 26, 27
Maximum output power vs Free-air temperature 28
Output power
Open-loop gain vs Frequency 31
Supply ripple rejection ratio vs Frequency 32, 33
DISTRIBUTION OF TPS4861 DISTRIBUTION OF TPS4861
OUTPUT OFFSET VOLTAGE OUTPUT OFFSET VOLTAGE
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Frequency 5, 6, 7, 8, 9, 10,11,15, 16,17,18
vs Output power 12, 13, 14, 19,20,21
vs Load resistance 29
vs Supply voltage 30
4
Figure 1. Figure 2.
− Supply Current − mA
4
2.5
1.5
0.5
TA − Free-Air Temperature − °C
−40 25
3
2
1
VDD = 5 V
I
DD
3.5
85
5
4.5
Typical
− Supply Current − mA
3.5
2
1
0
TA − Free-Air Temperature − °C
−40 25
2.5
1.5
0.5
VDD = 3.3 V
I
DD
3
85
Typical
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −2 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −10 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
THD+N − Total Harmonic Distortion Plus Noise − %
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
SUPPLY CURRENT DISTRIBUTION SUPPLY CURRENT DISTRIBUTION
vs vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 3. Figure 4.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 5. Figure 6.
5
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −20 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 0.5 W
AV = −2 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 0.5 W
AV = −10 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
PO = 0.5 W
AV = −20 V/V
RL = 8 Ω
CB = 0.1 µF
CB = 1 µF
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 7. Figure 8.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
6
Figure 9. Figure 10.
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −10 V/V
Single Ended
RL = 8 Ω
PO = 250 mW
RL = 32 Ω
PO = 60 mW
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 Hz
CB = 0.1 µF
2
CB = 1 µF
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 1 kHz
2
CB = 0.1 µF
CB = 1 µF
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 kHz
CB = 0.1 µF
2
CB = 1 µF
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 11. Figure 12.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 13. Figure 14.
7
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −2 V/V
CB = 0.1 µF
CB = 1 µF
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −10 V/V
CB = 1 µF
CB = 0.1 µF
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −20 V/V
CB = 1 µF
CB = 0.1 µF
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
AV = −10 V/V
Single Ended
RL = 32 Ω
PO = 60 mW
RL = 8 Ω
PO = 250 mW
TPA4861
SLOS163C – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 15. Figure 16.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
8
Figure 17. Figure 18.