1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
SHUTDOWN
HP-SENSE
GND
BYPASS
HP-IN1
HP-IN2
GND
GND
VO2
IN+
IN–
V
DD
GAIN
VO1
GND
D PACKAGE
(TOP VIEW)
Audio
Input
Bias
Control
V
DD
1 W
12
10
15
1, 4, 8, 9, 16
VO1
VO2
V
DD
2
3
7
6
5
14
13
11 GAIN
IN+
IN–
BYPASS
HP-IN1
HP-IN2
HP-SENSE
SHUTDOWN
VDD/2
C
I
R
I
R
F
V
DD
R
PU
Headphone
Plug
NC
C
B
C
S
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
1-W MONO AUDIO POWER AMPLIFIER
FEATURES
• 1-W BTL Output (5 V, 0.2 % THD+N)
• 3.3-V and 5-V Operation
• No Output Coupling Capacitors Required
• Shutdown Control (I
• Headphone Interface Logic
• Uncompensated Gains of 2 to 20 (BTL Mode)
• Surface-Mount Packaging
• Thermal and Short-Circuit Protection
• High Power Supply Rejection(56-dB at 1 kHz)
• LM4860 Drop-In Compatible
DESCRIPTION
The TPA4860 is a bridge-tied load (BTL) audio power amplifier capable of delivering 1 W of continuous average
power into an 8-Ω load at 0.4 % THD+N from a 5-V power supply in voiceband frequencies (f < 5 kHz). A BTL
configuration eliminates the need for external coupling capacitors on the output in most applications. Gain is
externally configured by means of two resistors and does not require compensation for settings of 2 to 20.
Features of this amplifier are a shutdown function for power-sensitive applications as well as headphone
interface logic that mutes the output when the speaker drive is not required. Internal thermal and short-circuit
protection increases device reliability. It also includes headphone interface logic circuitry to facilitate headphone
applications. The amplifier is available in a 16-pin SOIC surface-mount package that reduces board space and
facilitates automated assembly.
DD
= 0.6 µA)
TYPICAL APPLICATION CIRCUIT
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 1996–2004, Texas Instruments Incorporated
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
T
A
–40° C to 85° C TPA4860D
PACKAGED DEVICE
SMALL OUTLINE (D)
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
V
V
T
T
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
Supply voltage 6 V
DD
Input voltage –0.3 V to V
I
Continuous total power dissipation Internally Limited (See Dissipation Rating Table)
Operating free-air temperature range –40° C to 85° C
A
Storage temperature range –65° C to 150° C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260° C
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
UNIT
+0.3 V
DD
DISSIPATION RATING TABLE
PACKAGE TA≤ 25°C DERATING FACTOR TA= 70° C TA= 85° C
D 1250 mW 10 mW/° C 800 mW 650 mW
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
V
T
Supply voltage 2.7 5.5 V
DD
V
= 3.3 V 1.25 2.7 V
Common-mode input voltage
IC
Operating free-air temperature –40 85 ° C
A
DD
V
= 5 V 1.25 4.5 V
DD
2
ELECTRICAL CHARACTERISTICS
at specified free-air temperature range, V
PARAMETER TEST CONDITIONS UNIT
V
I
DD
I
DD(M)
I
DD(SD)
V
V
V
V
(1) At 3 V < V
Output offset voltage (measured differentially) See
OO
Supply ripple rejection ratio V
Quiescent current 2.5 mA
Quiescent current, mute mode 750 µA
Quiescent current, shutdown mode 0.6 µA
High-level input voltage (HP-IN) 1.7 V
IH
Low-level input voltage (HP-IN) 1.7 V
IL
High-level output voltage (HP-SENSE) IO= 100 µA 2.5 2.8 V
OH
Low-level output voltage (HP-SENSE) IO= -100 µA 0.2 0.8 V
OL
< 5 V the dc output voltage is approximately VDD/2.
DD
= 3.3 V (unless otherwise noted)
DD
OPERATING CHARACTERISTICS
V
= 3.3 V, TA= 25° C, RL= 8 Ω
DD
PARAMETER TEST CONDITIONS UNIT
P
B
B
Output power
O
Maximum output power bandwidth Gain = 10, THD = 2% 20 kHz
OM
Unity-gain bandwidth Open loop 1.5 MHz
1
Supply ripple rejection ratio
V
Noise output voltage
n
(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.
(1)
BTL f = 1 kHz 56 dB
SE f = 1 kHz 30 dB
(2)
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TPA4860
MIN TYP MAX
(1)
= 3.2 V to 3.4 V 75 dB
DD
TPA4860
MIN TYP MAX
THD = 0.2%, f = 1 kHz, AV= 2 350 mW
THD = 2%, f = 1 kHz, AV= 2 500 mW
Gain = 2 20 µV
5 20 mV
3
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
ELECTRICAL CHARACTERISTICS
at specified free-air temperature range, V
PARAMETER TEST CONDITIONS UNIT
V
Output offset voltage See
OO
Supply ripple rejection ratio V
I
I
I
V
V
V
V
(1) At 3 V < V
Supply current 3.5 mA
DD
Supply current, mute 750 µA
DD(M)
Supply current, shutdown 0.6 µA
DD(SD)
High-level input voltage (HP-IN) 2.5 V
IH
Low-level input voltage (HP-IN) 2.5 V
IL
High-level output voltage (HP-SENSE) IO= 500 µA 2.5 2.8 V
OH
Low-level output voltage (HP-SENSE) IO= -500 µA 0.2 0.8 V
OL
< 5 V the dc output voltage is approximately VDD/2.
DD
OPERATING CHARACTERISTICS
V
= 5 V, TA= 25° C, RL= 8 Ω
DD
PARAMETER TEST CONDITIONS UNIT
P
Output power
O
B
Maximum output power bandwidth Gain = 10, THD = 2% 20 kHz
OM
B
Unity-gain bandwidth Open loop 1.5 MHz
1
Supply ripple rejection ratio
V
Noise output voltage
n
(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.
(1)
(2)
= 5 V (unless otherwise noted)
DD
MIN TYP MAX
(1)
= 4.9 V to 5.1 V 70 dB
DD
MIN TYP MAX
THD = 0.2%, f = 1 kHz, AV= 2 1000 mW
THD = 2%, f = 1 kHz, AV= 2 1100 mW
BTL f = 1 kHz 56 dB
SE f = 1 kHz 30 dB
Gain = 2 20 µV
TPA4860
5 20 mV
TPA4860
4
Number of Amplifiers
20
10
0
VOO − Output Offset Voltage − mV
25
15
5
VCC = 5 V
−3 −2 −1 0 1 2 3 4 5 6 7
Number of Amplifiers
20
10
0
VOO − Output Offset Voltage − mV
25
15
5
−3 −2 −1 0 1 2 3 4 5 6 7
VCC = 3.3 V
V
OO
I
DD
Output offset voltage Distribution 1,2
Supply current distribution vs Free-air temperature 3,4
THD+N Total harmonic distortion plus noise
I
DD
V
n
Supply current vs Supply voltage 22
Output noise voltage vs Frequency 23, 24
Maximum package power dissipation vs Free-air temperature 25
Power dissipation vs Output power 26, 27
Maximum output power vs Free-air temperature 28
Output power
Open-loop frequency response vs Frequency 31
Supply ripple rejection ratio vs Frequency 32, 33
DISTRIBUTION OF TPA4860 DISTRIBUTION OF TPA4860
OUTPUT OFFSET VOLTAGE OUTPUT OFFSET VOLTAGE
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Frequency 5, 6, 7, 8, 9, 10,11,15, 16,17,18
vs Output power 12, 13, 14, 19,20,21
vs Load resistance 29
vs Supply voltage 30
Figure 1. Figure 2.
5
− Supply Current − mA
3.5
2
1
0
TA − Free-Air Temperature − °C
−20 25
2.5
1.5
0.5
VCC = 5 V
I
DD
3
85
4.5
4
Typical
− Supply Current − mA
3.5
2
1
0
TA − Free-Air Temperature − °C
−20 25
2.5
1.5
0.5
VCC = 3.3 V
I
DD
3
85
Typical
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −2 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −10 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
THD+N − Total Harmonic Distortion Plus Noise − %
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
SUPPLY CURRENT DISTRIBUTION SUPPLY CURRENT DISTRIBUTION
vs vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 3. Figure 4.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
6
Figure 5. Figure 6.
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 1 W
AV = −20 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 0.5 W
AV = −2 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
PO = 0.5 W
AV = −10 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
THD+N − Total Harmonic Distortion Plus Noise − %
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
PO = 0.5 W
AV = −20 V/V
RL = 8 Ω
CB = 0.1 µ F
CB = 1 µ F
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 7. Figure 8.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 9. Figure 10.
7
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 Hz
CB = 0.1 µ F
2
CB = 1 µ F
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −10 V/V
Single Ended
RL = 8 Ω
PO = 250 mW
RL = 32 Ω
PO = 60 mW
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 1 kHz
2
CB = 0.1 µ F
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 kHz
CB = 0.1 µ F
2
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 11. Figure 12.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
OUTPUT POWER OUTPUT POWER
8
Figure 13. Figure 14.
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
CB = 1 µ F
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −2 V/V
CB = 0.1 µ F
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
CB = 1 µ F
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −10 V/V
CB = 0.1 µ F
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
PO = 350 mW
RL = 8 Ω
AV = −20 V/V
CB = 1 µ F
CB = 0.1 µ F
20
10
1
0.1
0.01
100 1 k 10 k 20 k
f − Frequency − Hz
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
AV = −10 V/V
Single Ended
RL = 32 Ω
PO = 60 mW
RL = 8 Ω
PO = 250 mW
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 15. Figure 16.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 17. Figure 18.
9
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
AV = −2 V/V
RL = 8 Ω
f = 20 Hz
CB = 0.1 µ F
2
CB = 1.0 µ F
0.02
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
AV = −2 V/V
RL = 8 Ω
f = 1 kHz
CB = 0.1 µ F
2
20 m
10
1
0.1
0.01
0.1 1
PO − Output Power − W
THD+N − Total Harmonic Distortion Plus Noise − %
VDD = 3.3 V
AV = −2 V/V
RL = 8 Ω
f = 20 kHz
CB = 0.1 µ F
2
− Supplu Current − mA I
DD
2.5
5
2
1
0
3 3.5
VDD − Supply Voltage − V
4 4.5 5 5.5
4
3
TA = 0° C
TA = 85° C
TA = 25° C
TA = −20° C
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 19. Figure 20.
TOTAL HARMONIC DISTORTION + NOISE SUPPLY CURRENT
vs vs
OUTPUT POWER SUPPLY VOLTAGE
10
Figure 21. Figure 22.
20
10
3
10
2
10
1
1
100 1 k 10 k 20 k
f − Frequency − Hz
VCC = 5 V
V01 +V02
V01
V02
− Output Noise Voltage − V
n
Vµ
20
10
3
10
2
10
1
1
100 1 k 10 k 20 k
f − Frequency − Hz
VCC = 3.3 V
V02
V01
V01 +V02
− Output Noise Voltage − V
n
Vµ
Power Dissipation − W
1.5
1
0.5
0
0 0.75 1.75
PO − Output Power − W
0.25 0.5 1 1.25 1.5
VDD = 5 V
RL = 4 Ω
RL = 8 Ω
RL = 16 Ω
Maximum Package Power Dissipation − W
−25
1.5
1
0.5
0
0 75 175
TA − Free-Air Temperature − ° C
25 50 100 125 150
1.25
0.75
0.25
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
OUTPUT NOISE VOLTAGE OUTPUT NOISE VOLTAGE
vs vs
FREQUENCY FREQUENCY
Figure 23. Figure 24.
MAXIMUM PACKAGE POWER DISSIPATION POWER DISSIPATION
vs vs
FREE-AIR TEMPERATURE OUTPUT POWER
Figure 25. Figure 26.
11
160
40
20
0
0 0.25 1.50 0.5 0.75 1
RL = 16 Ω
− Free-Air Temperature −
PO − Maximum Output Power − W
1.25
RL = 8 Ω
RL = 4 Ω
C
°
T
A
80
60
120
100
140
1
0.5
0.25
0
0 0.75
PO − Output Power − W
0.25 0.5
VDD = 3.3 V
RL = 4 Ω
RL = 8 Ω
RL = 16 Ω
0.75
Power Dissipation − W
− Power Output − W
4
1.4
0.8
0.4
0
8 20 36
Load Resistance − Ω
12 16 24 28 32
1
0.6
0.2
VCC = 5 V
VCC = 3.3 V
P
O
AV = −2 V/V
f = 1 kHz
CB = 0.1 µ F
THD+n ≤ 1%
1.2
48 40 44
− Power Output − W
3
1.75
1
0.5
0
3.5 5
Supply Voltage − V
4 4.5 5.5
1.25
0.75
0.25
P
O
1.5
AV = −2 V/V
f = 1 kHz
CB = 0.1 µ F
THD+n ≤ 1%
2.5
2
RL = 8 Ω
RL = 4 Ω
RL = 16 Ω
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
POWER DISSIPATION MAXIMUM OUTPUT POWER
vs vs
OUTPUT POWER FREE-AIR TEMPERATURE
Figure 27. Figure 28.
OUTPUT POWER OUTPUT POWER
vs vs
LOAD RESISTANCE SUPPLY VOLTAGE
12
Figure 29. Figure 30.
G − Gain − dB
10
100
60
20
−20
100 100 k
f − Frequency − Hz
VDD = 5 V
RL = 8 Ω
CB = 0.1 µ F
1 k 10 k 1 M 10 M
80
40
0
45°
−45°
−135°
−225°
0°
−90°
−180°
Phase
Gain
Phase
100
0
−90
−100
1 k 10 k 20 k
f − Frequency − Hz
VDD = 5 V
RL = 8 Ω
Bridge-Tied
Load
CB = 0.1 µ F
CB = 1 µ F
−80
−70
−60
−50
−40
−30
−20
−10
Supply Ripple Rejection Ratio − dB
100
0
−90
−100
1 k 10 k 20 k
f − Frequency − Hz
CB = 0.1 µ F
CB = 1 µ F
−80
−70
−60
−50
−40
−30
−20
−10
VDD = 5 V
RL = 8 Ω
Single Ended
Supply Ripple Rejection Ratio − dB
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
OPEN-LOOP FREQUENCY RESPONSE FREQUENCY
Figure 31. Figure 32.
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
SUPPLY RIPPLE REJECTION RATIO
vs
Figure 33.
13
Power
V
(RMS)
2
R
L
V
(RMS)
V
O(PP)
2 2
R
L
2x V
O(PP)
V
O(PP)
–V
O(PP)
V
DD
V
DD
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
APPLICATION INFORMATION
BRIDGED-TIED LOAD VERSUS SINGLE-ENDED MODE
Figure 34 shows a linear audio power amplifier (APA) in a bridge-tied load (BTL) configuration. A BTL amplifier
actually consists of two linear amplifiers driving both ends of the load. There are several potential benefits to this
differential drive configuration but initially let us consider power to the load. The differential drive to the speaker
means that as one side is slewing up the other side is slewing down and vice versa. This, in effect, doubles the
voltage swing on the load as compared to a ground-referenced load. Plugging twice the voltage into the power
equation, where voltage is squared, yields 4 times the output power from the same supply rail and load
impedance (see Equation 1 ).
(1)
Figure 34. Bridge-Tied Load Configuration
In a typical computer sound channel operating at 5 V, bridging raises the power into an 8-Ω speaker from a
singled-ended (SE) limit of 250 mW to 1 W. In sound power, that is a 6-dB improvement which is loudness that
can be heard. In addition to increased power there are frequency response concerns; consider the single-supply
SE configuration shown in Figure 35 . A coupling capacitor is required to block the dc offset voltage from reaching
the load. These capacitors can be quite large (approximately 40 µF to 1000 µF); so, they tend to be expensive,
occupy valuable PCB area, and have the additional drawback of limiting low-frequency performance of the
system. This frequency-limiting effect is due to the high-pass filter network created with the speaker impedance
and the coupling capacitance and is calculated with Equation 2 .
For example, a 68-µF capacitor with an 8-Ω speaker would attenuate low frequencies below 293 Hz. The BTL
configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency
performance is then limited only by the input network and speaker response. Cost and PCB space are also
minimized by eliminating the bulky coupling capacitor.
14
(2)
R
L
C
C
V
O(PP)
V
O(PP)
V
DD
V
L(RMS)
V
O
I
DD
I
DD(RMS)
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
APPLICATION INFORMATION (continued)
Figure 35. Single-Ended Configuration
Increasing power to the load does carry a penalty of increased internal power dissipation. The increased
dissipation is understandable considering that the BTL configuration produces 4 times the output power of the SE
configuration. Internal dissipation versus output power is discussed further in the thermal considerations section.
BTL AMPLIFIER EFFICIENCY
Linear amplifiers are notoriously inefficient. The primary cause of these inefficiencies is voltage drop across the
output stage transistors. The internal voltage drop has two components. One is the headroom or dc voltage drop
that varies inversely to output power. The second component is due to the sine-wave nature of the output. The
total voltage drop can be calculated by subtracting the RMS value of the output voltage from V
voltage drop multiplied by the RMS value of the supply current, I
DD(RMS)
, determines the internal power
dissipation of the amplifier.
An easy-to-use equation to calculate efficiency starts out as being equal to the ratio of power from the power
supply to the power delivered to the load. To accurately calculate the RMS values of power in the load and in the
amplifier, the current and voltage waveform shapes must first be understood (see Figure 36 ).
. The internal
DD
Figure 36. Voltage and Current Waveforms for BTL Amplifiers
Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are
different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified
shape, whereas in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different.
Keep in mind that for most of the waveform both the push and pull transistor are not on at the same time, which
supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform.
The following equations are the basis for calculating amplifier efficiency.
15
V
L(RMS)
V
P
2
I
DD(RMS)
2V
P
R
L
P
SUP
VDDI
DD(RMS)
VDD2V
P
R
L
Efficiency
P
L
P
SUP
P
L
V
L(RMS)
2
R
L
V
p
2
2R
L
Where:
Efficiency of a BTL configuration
V
P
2V
DD
PLR
L
2
1 2
2V
DD
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
APPLICATION INFORMATION (continued)
Table 1 employs Equation 4 to calculate efficiencies for four different output power levels. Note that the efficiency
of the amplifier is quite low for lower power levels and rises sharply as power to the load is increased, resulting in
a nearly flat internal power dissipation over the normal operating range. Note that the internal dissipation at full
output power is less than in the half power range. Calculating the efficiency for a specific system is the key to
proper power supply design. For a stereo 1-W audio system with 8-Ω loads and a 5-V supply, the maximum draw
on the power supply is almost 3.25 W.
(3)
(4)
OUTPUT POWER EFFICIENCY
(1) High peak voltages cause the THD to increase.
A final point to remember about linear amplifiers whether they are SE or BTL configured is how to manipulate the
terms in the efficiency equation to utmost advantage when possible. Note that in Equation 4 , V
denominator. This indicates that as V
For example, if the 5-V supply is replaced with a 10-V supply (TPA4860 has a maximum recommended V
5.5 V) in the calculations of Table 1 , then efficiency at 1 W would fall to 31% and internal power dissipation
would rise to 2.18 W from 0.59 W at 5 V. Then, for a stereo 1-W system from a 10-V supply, the maximum draw
would be almost 6.5 W. Choose the correct supply voltage and speaker impedance for the application.
16
Table 1. Efficiency vs Output Power in 5-V 8-Ω BTL Systems
PEAK-TO-PEAK INTERNAL
(W) (%)
0.25 31.4 2.00 0.55
0.50 44.4 2.83 0.62
1.00 62.8 4.00 0.59
1.25 70.2 4.47
goes down, efficiency goes up.
DD
VOLTAGE DISSIPATION
(V) (W)
(1)
0.53
is in the
DD
of
DD
SELECTION OF COMPONENTS
Audio
Input
Bias
Control
VDD = 5 V
1-W
Internal
Speaker
12
10
15
1, 4, 8, 9, 16
VO1
VO2
V
DD
2
3
7
6
5
14
13
11 GAIN
IN+
IN−
BYPASS
HP-IN1
HP-IN2
HP-SENSE
SHUTDOWN
VDD/2
C
I
R
I
R
F
V
DD
R
PU
Headphone
Plug
NC
C
F
50 kΩ 50 kΩ
46 kΩ
46 kΩ
C
B
C
S
Effective Impedance
RFR
I
RF R
I
Figure 37 is a schematic diagram of a typical notebook computer application circuit.
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
Figure 37. TPA4860 Typical Notebook Computer Application Circuit
Gain Setting Resistors, R
The gain for the TPA4860 is set by resistors R
and R
F
I
and RIaccording to Equation 5 .
F
BTL mode operation brings about the factor of 2 in the gain equation due to the inverting amplifier mirroring the
voltage swing across the load. Given that the TPA4860 is a MOS amplifier, the input impedance is high;
consequently, input leakage currents are not generally a concern although noise in the circuit increases as the
value of R
increases. In addition, a certain range of R
F
amplifier. Taken together, it is recommended that the effective impedance seen by the inverting node of the
amplifier be set between 5 kΩ and 20 kΩ . The effective impedance is calculated in Equation 6 .
As an example, consider an input resistance of 10 kΩ and a feedback resistor of 50 kΩ . The gain of the amplifier
would be –10 and the effective impedance at the inverting terminal would be 8.3 kΩ , which is well within the
recommended range.
For high-performance applications metal film resistors are recommended because they tend to have lower noise
levels than carbon resistors. For values of R
formed from R
and the inherent input capacitance of the MOS input structure. For this reason, a small
F
values is required for proper start-up operation of the
F
above 50 kΩ , the amplifier tends to become unstable due to a pole
F
compensation capacitor of approximately 5 pF should be placed in parallel with RF. In effect, this creates a
low-pass filter network with the cutoff frequency defined in Equation 7 .
(5)
(6)
17
f
c(lowpass)
1
2 R
FCF
f
c(highpass)
1
2 R
I
C
I
1
CB 25 kΩ
1
CIR
I
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
For example, if R
is 100 kΩ and C
F
is 5 pF, then fcis 318 kHz, which is well outside of the audio range.
F
(7)
Input Capacitor, C
In the typical application, an input capacitor, C
proper dc level for optimum operation. In this case, C
I
is required to allow the amplifier to bias the input signal to the
I
and RIform a high-pass filter with the corner frequency
I
determined in Equation 8 .
The value of CIis important to consider as it directly affects the bass (low-frequency) performance of the circuit.
Consider the example where R
is 10 kΩ and the specification calls for a flat bass response down to 40 Hz.
I
Equation 8 is reconfigured as Equation 9 .
In this example, C
consideration for this capacitor is the leakage path from the input source through the input network (R
the feedback resistor (R
is 0.40 µF; so, one would likely choose a value in the range of 0.47 µF to 1 µF. A further
I
) to the load. This leakage current creates a dc-offset voltage at the input to the
F
, CI) and
I
amplifier that reduces useful headroom, especially in high-gain applications. For this reason a low-leakage
tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications as the dc level there is held at V
/2, which is likely
DD
higher that the source dc level. Note that it is important to confirm the capacitor polarity in the application.
POWER SUPPLY DECOUPLING C
S
The TPA4860 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to
ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents
oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by
using two capacitors of different types that target different types of noise on the power supply leads. For higher
frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic
capacitor, typically 0.1 µF placed as close as possible to the device V
lead, works best. For filtering
DD
lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near the power
amplifier is recommended.
(8)
(9)
MIDRAIL BYPASS CAPACITOR, C
B
The midrail bypass capacitor, CB, serves several important functions. During start-up or recovery from shutdown
mode, C
determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into the
B
subaudible range (so low it cannot be heard). The second function is to reduce noise produced by the power
supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to
the amplifier. The capacitor is fed from a 25-kΩ source inside the amplifier. To keep the start-up pop as low as
possible, the relationship shown in Equation 10 should be maintained.
As an example, consider a circuit where C
is 0.1 µF, CIis 0.22 µF and R
B
is 10 kΩ . Inserting these values into
I
the Equation 9 , we get: 400 ≤ 454 which satisfies the rule. Recommended value for bypass capacitor C
0.1-µF to 1-µF ceramic or tantalum low-ESR for the best THD and noise performance.
18
(10)
is
B
Audio
Input
VDD = 5 V
250-mW
External
Speaker
12
10
15
VO1
VO2
V
DD
5
14
13
11 GAIN
IN+
IN−
BYPASS
VDD/2
C
I
R
I
R
F
CSE = 0.1 µ F
RSE = 50 Ω
C
C
C
B
C
S
1
CB 25 kΩ
1
CIR
I
1
R
LCC
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
SINGLE-ENDED OPERATION
Figure 38 is a schematic diagram of the recommended SE configuration. In SE mode configurations, the load
should be driven from the primary amplifier output (V
Figure 38. Singled-Ended Mode
1, terminal 10).
O
Gain is set by the R
and RIresistors and is shown in Equation 11 . Because the inverting amplifier is not used to
F
mirror the voltage swing on the load, the factor of 2 is not included.
The phase margin of the inverting amplifier into an open circuit is not adequate to ensure stability, so a
termination load should be connected to VO2. This consists of a 50-Ω resistor in series with a 0.1-µF capacitor to
ground. It is important to avoid oscillation of the inverting output to minimize noise and power dissipation.
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. The rules described earlier still hold with the addition of the
following relationship:
OUTPUT COUPLING CAPACITOR, C
In the typical single-supply SE configuration, an output coupling capacitor (C
C
) is required to block the dc bias at
C
the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the
output coupling capacitor and impedance of the load form a high-pass filter governed by Equation 13 .
The main disadvantage, from a performance standpoint, is that the load impedances are typically small, which
drives the low-frequency corner higher. Large values of C
Consider the example where a C
summarizes the frequency response characteristics of each configuration.
of 68 µF is chosen and loads vary from 8 Ω , 32 Ω , to 47 kΩ . Table 2
C
are required to pass low frequencies into the load.
C
(11)
(12)
(13)
19
Bias
Control
2
3
7
6
HP-IN1
HP-IN2
HP-SENSE
SHUTDOWN
V
DD
R
PU
Headphone
Plug
NC
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
Table 2. Common Load Impedances vs Low Frequency
Output Characteristics in SE Mode
R
L
8 Ω 68 µF 293 Hz
32 Ω 68 µF 73 Hz
47,000 Ω 68 µF 0.05 Hz
As Table 2 indicates, most of the bass response is attenuated into 8-Ω loads while headphone response is
adequate and drive into line level inputs (a home stereo for example) is good.
C
C
LOWEST FREQUENCY
HEADPHONE SENSE CIRCUITRY, R
pu
The TPA4860 is commonly used in systems where there is an internal speaker and a jack for driving external
loads (i.e., headphones). In these applications, it is usually desirable to mute the internal speaker(s) when the
external load is in use. The headphone inputs (HP-1, HP-2) and headphone output (HP-SENSE) of the TPA4860
were specifically designed for this purpose. Many standard headphone jacks are available with an internal
single-pole single-throw (SPST) switch that makes or breaks a circuit when the headphone plug is inserted.
Asserting either or both HP-1 and/or HP-2 high mutes the output stage of the amplifier and causes HP-SENSE to
go high. In battery-powered applications where power conservation is critical, HP-SENSE can be connected to
the shutdown input as shown in Figure 39 . This places the amplifier in a low current state for maximum power
savings. Pullup resistors in the range from 1 kΩ to 10 kΩ are recommended for 5-V and 3.3-V operation.
Figure 39. Schematic Diagram of Typical Headphone Sense Application
Table 3 details the logic for the mute function of the TPA4860.
Table 3. Truth Table for Headphone Sense and Shutdown Functions
INPUTS
HP-1 HP-2 SHUTDOWN HP-SENSE
Low Low Low Low Active
Low High Low High Mute
High Low Low High Mute
High High Low High Mute
(2)
X
(1)
(2)
X
High X
OUTPUT
(2)
AMPLIFIER STATE
Shutdown
(1) Inputs should never be left unconnected.
(2) X = do not care
20
160
40
20
0
0 0.25 1.50 0.5 0.75 1
RL = 16 Ω
– Free-Air Temperature –
Maximum Output Power – W
1.25
RL = 8 Ω
RL = 4 Ω
C
°
T
A
80
60
120
100
140
VDD = 5 V
TPA4860
SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004
SHUTDOWN MODE
The TPA4860 employs a shutdown mode of operation designed to reduce quiescent supply current, I
absolute minimum level during periods of nonuse for battery-power conservation. For example, during device
sleep modes or when other audio-drive currents are used (i.e., headphone mode), the speaker drive is not
required. The SHUTDOWN input terminal should be held low during normal operation when the amplifier is in
use. Pulling SHUTDOWN high causes the outputs to mute and the amplifier to enter a low-current state, IDD~
0.6 µA. SHUTDOWN should never be left unconnected because amplifier operation would be unpredictable.
USING LOW-ESR CAPACITORS
Low-ESR capacitors are recommended throughout this applications section. A real capacitor can be modeled
simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the
beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the
real capacitor behaves like an ideal capacitor.
THERMAL CONSIDERATIONS
A prime consideration when designing an audio amplifier circuit is internal power dissipation in the device. The
curve in Figure 40 provides an easy way to determine what output power can be expected out of the TPA4860
for a given system ambient temperature in designs using 5-V supplies. This curve assumes no forced airflow or
additional heat sinking.
, to the
DD(q)
5-V VERSUS 3.3-V OPERATION
The TPA4860 was designed for operation over a supply range of 2.7 V to 5.5 V. This data sheet provides full
specifications for 5-V and 3.3-V operation, as these are considered to be the two most common standard
voltages. There are no special considerations for 3.3-V versus 5-V operation as far as supply bypassing, gain
setting, or stability. Supply current is slightly reduced from 3.5 mA (typical) to 2.5 mA (typical). The most
important consideration is that of output power. Each amplifier in TPA4860 can produce a maximum voltage
swing of V
when V
power into an 8-Ω load to less than 0.33 W before distortion begins to become significant.
DD
O(PP)
Operation at 3.3-V supplies, as can be shown from the efficiency formula in Equation 4 , consumes approximately
two-thirds the supply power for a given output-power level than operation from 5-V supplies. When the
application demands less than 500 mW, 3.3-V operation should be strongly considered, especially in
battery-powered applications.
Figure 40. Free-Air Temperature Versus Maximum Continuous Output Power
– 1 V. This means, for 3.3-V operation, clipping starts to occur when V
= 2.3 V as opposed to
O(PP)
= 4 V while operating at 5 V. The reduced voltage swing subsequently reduces maximum output
21
PACKAGE OPTION ADDENDUM
www.ti.com
5-Oct-2007
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
TPA4860D ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br)
TPA4860DG4 ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br)
TPA4860DR ACTIVE SOIC D 16 2500 Green (RoHS &
no Sb/Br)
TPA4860DRG4 ACTIVE SOIC D 16 2500 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
(3)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer: The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
11-Mar-2008
*All dimensions are nominal
Device Package
Type
TPA4860DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
Package
Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPA4860DR SOIC D 16 2500 346.0 346.0 33.0
Pack Materials-Page 2
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