TEXAS INSTRUMENTS TPA4860 Technical data

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1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

GND

SHUTDOWN

HP-SENSE

GND

BYPASS

HP-IN1
HP-IN2

GND

GND
VO2
IN+
IN–
V

DD

GAIN
VO1
GND

D PACKAGE

(TOP VIEW)

Audio

Input

Bias

Control

V

DD

1 W

12

10

15

1, 4, 8, 9, 16

VO1

VO2

V

DD

2

3

7

6

5

14

13

11 GAIN

IN+

IN–

BYPASS

HP-IN1
HP-IN2

HP-SENSE
SHUTDOWN

VDD/2

C

I

R

I

R

F

V

DD

R

PU

Headphone

Plug

NC

C

B

C

S

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

1-W MONO AUDIO POWER AMPLIFIER

FEATURES

• 1-W BTL Output (5 V, 0.2 % THD+N)

• 3.3-V and 5-V Operation

• No Output Coupling Capacitors Required

• Shutdown Control (I

• Headphone Interface Logic

• Uncompensated Gains of 2 to 20 (BTL Mode)

• Surface-Mount Packaging

• Thermal and Short-Circuit Protection

• High Power Supply Rejection(56-dB at 1 kHz)

• LM4860 Drop-In Compatible

DESCRIPTION

The TPA4860 is a bridge-tied load (BTL) audio power amplifier capable of delivering 1 W of continuous average
power into an 8-Ω load at 0.4 % THD+N from a 5-V power supply in voiceband frequencies (f < 5 kHz). A BTL
configuration eliminates the need for external coupling capacitors on the output in most applications. Gain is
externally configured by means of two resistors and does not require compensation for settings of 2 to 20.
Features of this amplifier are a shutdown function for power-sensitive applications as well as headphone
interface logic that mutes the output when the speaker drive is not required. Internal thermal and short-circuit
protection increases device reliability. It also includes headphone interface logic circuitry to facilitate headphone
applications. The amplifier is available in a 16-pin SOIC surface-mount package that reduces board space and
facilitates automated assembly.

DD

= 0.6 µA)

TYPICAL APPLICATION CIRCUIT

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 1996–2004, Texas Instruments Incorporated

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TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

AVAILABLE OPTIONS

T

A

–40°C to 85°C TPA4860D

PACKAGED DEVICE
SMALL OUTLINE (D)

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

V
V

T
T

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

Supply voltage 6 V

DD

Input voltage –0.3 V to V

I

Continuous total power dissipation Internally Limited (See Dissipation Rating Table)
Operating free-air temperature range –40°C to 85°C

A

Storage temperature range –65°C to 150°C

stg

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(1)

UNIT

+0.3 V

DD

DISSIPATION RATING TABLE

PACKAGE TA≤ 25°C DERATING FACTOR TA= 70°C TA= 85°C

D 1250 mW 10 mW/°C 800 mW 650 mW

RECOMMENDED OPERATING CONDITIONS

MIN MAX UNIT

V

V

T

Supply voltage 2.7 5.5 V

DD

V

= 3.3 V 1.25 2.7 V

Common-mode input voltage

IC

Operating free-air temperature –40 85 °C

A

DD

V

= 5 V 1.25 4.5 V

DD

2

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ELECTRICAL CHARACTERISTICS

at specified free-air temperature range, V

PARAMETER TEST CONDITIONS UNIT

V

I

DD

I

DD(M)

I

DD(SD)

V
V
V
V

(1) At 3 V < V

Output offset voltage (measured differentially) See

OO

Supply ripple rejection ratio V
Quiescent current 2.5 mA
Quiescent current, mute mode 750 µA
Quiescent current, shutdown mode 0.6 µA
High-level input voltage (HP-IN) 1.7 V

IH

Low-level input voltage (HP-IN) 1.7 V

IL

High-level output voltage (HP-SENSE) IO= 100 µA 2.5 2.8 V

OH

Low-level output voltage (HP-SENSE) IO= -100 µA 0.2 0.8 V

OL

< 5 V the dc output voltage is approximately VDD/2.

DD

= 3.3 V (unless otherwise noted)

DD

OPERATING CHARACTERISTICS

V

= 3.3 V, TA= 25°C, RL= 8 Ω

DD

PARAMETER TEST CONDITIONS UNIT

P

B
B

Output power

O

Maximum output power bandwidth Gain = 10, THD = 2% 20 kHz

OM

Unity-gain bandwidth Open loop 1.5 MHz

1

Supply ripple rejection ratio

V

Noise output voltage

n

(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.

(1)

BTL f = 1 kHz 56 dB
SE f = 1 kHz 30 dB

(2)

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

TPA4860

MIN TYP MAX

(1)

= 3.2 V to 3.4 V 75 dB

DD

TPA4860

MIN TYP MAX

THD = 0.2%, f = 1 kHz, AV= 2 350 mW
THD = 2%, f = 1 kHz, AV= 2 500 mW

Gain = 2 20 µV

5 20 mV

3

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TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

ELECTRICAL CHARACTERISTICS

at specified free-air temperature range, V

PARAMETER TEST CONDITIONS UNIT

V

Output offset voltage See

OO

Supply ripple rejection ratio V
I
I
I
V
V
V
V

(1) At 3 V < V

Supply current 3.5 mA

DD

Supply current, mute 750 µA

DD(M)

Supply current, shutdown 0.6 µA

DD(SD)

High-level input voltage (HP-IN) 2.5 V

IH

Low-level input voltage (HP-IN) 2.5 V

IL

High-level output voltage (HP-SENSE) IO= 500 µA 2.5 2.8 V

OH

Low-level output voltage (HP-SENSE) IO= -500 µA 0.2 0.8 V

OL

< 5 V the dc output voltage is approximately VDD/2.

DD

OPERATING CHARACTERISTICS

V

= 5 V, TA= 25°C, RL= 8 Ω

DD

PARAMETER TEST CONDITIONS UNIT

P

Output power

O

B

Maximum output power bandwidth Gain = 10, THD = 2% 20 kHz

OM

B

Unity-gain bandwidth Open loop 1.5 MHz

1

Supply ripple rejection ratio

V

Noise output voltage

n

(1) Output power is measured at the output terminals of the device.
(2) Noise voltage is measured in a bandwidth of 20 Hz to 20 kHz.

(1)

(2)

= 5 V (unless otherwise noted)

DD

MIN TYP MAX

(1)

= 4.9 V to 5.1 V 70 dB

DD

MIN TYP MAX

THD = 0.2%, f = 1 kHz, AV= 2 1000 mW
THD = 2%, f = 1 kHz, AV= 2 1100 mW

BTL f = 1 kHz 56 dB
SE f = 1 kHz 30 dB

Gain = 2 20 µV

TPA4860

5 20 mV

TPA4860

4

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Number of Amplifiers

20

10

0

VOO − Output Offset Voltage − mV

25

15

5

VCC = 5 V

−3 −2 −1 0 1 2 3 4 5 6 7

Number of Amplifiers

20

10

0

VOO − Output Offset Voltage − mV

25

15

5

−3 −2 −1 0 1 2 3 4 5 6 7

VCC = 3.3 V

V

OO

I

DD

Output offset voltage Distribution 1,2
Supply current distribution vs Free-air temperature 3,4

THD+N Total harmonic distortion plus noise

I

DD

V

n

Supply current vs Supply voltage 22
Output noise voltage vs Frequency 23, 24
Maximum package power dissipation vs Free-air temperature 25
Power dissipation vs Output power 26, 27
Maximum output power vs Free-air temperature 28

Output power

Open-loop frequency response vs Frequency 31
Supply ripple rejection ratio vs Frequency 32, 33

DISTRIBUTION OF TPA4860 DISTRIBUTION OF TPA4860

OUTPUT OFFSET VOLTAGE OUTPUT OFFSET VOLTAGE

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

vs Frequency 5, 6, 7, 8, 9, 10,11,15, 16,17,18
vs Output power 12, 13, 14, 19,20,21

vs Load resistance 29
vs Supply voltage 30

Figure 1. Figure 2.

5

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− Supply Current − mA

3.5

2

1

0

TA − Free-Air Temperature − °C

−20 25

2.5

1.5

0.5

VCC = 5 V

I

DD

3

85

4.5

4

Typical

− Supply Current − mA

3.5

2

1

0

TA − Free-Air Temperature − °C

−20 25

2.5

1.5

0.5

VCC = 3.3 V

I

DD

3

85

Typical

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V
PO = 1 W
AV = −2 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

THD+N − Total Harmonic Distortion Plus Noise − %

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V
PO = 1 W
AV = −10 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

THD+N − Total Harmonic Distortion Plus Noise − %

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

SUPPLY CURRENT DISTRIBUTION SUPPLY CURRENT DISTRIBUTION

vs vs

FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE

Figure 3. Figure 4.

TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE

vs vs

FREQUENCY FREQUENCY

6

Figure 5. Figure 6.

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20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V
PO = 1 W
AV = −20 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

THD+N − Total Harmonic Distortion Plus Noise − %

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V
PO = 0.5 W
AV = −2 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

THD+N − Total Harmonic Distortion Plus Noise − %

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V
PO = 0.5 W
AV = −10 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

THD+N − Total Harmonic Distortion Plus Noise − %

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

THD+N − Total Harmonic Distortion Plus Noise − %

VDD = 5 V
PO = 0.5 W
AV = −20 V/V
RL = 8 Ω

CB = 0.1 µF

CB = 1 µF

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE

vs vs

FREQUENCY FREQUENCY

Figure 7. Figure 8.

TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE

vs vs

FREQUENCY FREQUENCY

Figure 9. Figure 10.

7

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0.02

10

1

0.1

0.01

0.1 1

PO − Output Power − W

THD+N − Total Harmonic Distortion Plus Noise − %

VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 Hz

CB = 0.1 µF

2

CB = 1 µF

20

10

1

0.1

0.01
100 1 k 10 k 20 k

f − Frequency − Hz

THD+N − Total Harmonic Distortion Plus Noise − %

VDD = 5 V
AV = −10 V/V
Single Ended

RL = 8 Ω
PO = 250 mW

RL = 32 Ω
PO = 60 mW

0.02

10

1

0.1

0.01

0.1 1

PO − Output Power − W

THD+N − Total Harmonic Distortion Plus Noise − %

VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 1 kHz

2

CB = 0.1 µF

0.02

10

1

0.1

0.01

0.1 1

PO − Output Power − W

THD+N − Total Harmonic Distortion Plus Noise − %

VDD = 5 V
AV = −2 V/V
RL = 8 Ω
f = 20 kHz

CB = 0.1 µF

2

TPA4860

SLOS164B – SEPTEMBER 1996 – REVISED JUNE 2004

TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE

vs vs

FREQUENCY OUTPUT POWER

Figure 11. Figure 12.

TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE

vs vs

OUTPUT POWER OUTPUT POWER

8

Figure 13. Figure 14.