TEXAS INSTRUMENTS TPA2015D1 Technical data

IN-

IN+

GAIN

ENB

END

GND

VBAT SW PVOUT PVDD

OUT+

OUT-

AGC

2.2 Hm

6.8 F - 22 Fm m

TPA2015D1

Differential

Audio Inputs

Gain Control

AGC Control

Boost Enable

Class-D Enable

2.2 F - 10 Fm m

Connected to Supply

TPA2015D1

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SLOS638 –MAY 2010

2 W Constant Output Power Class-D Audio Amplifier With Adaptive Boost Converter and

Battery Tracking SpeakerGuard™ AGC

Check for Samples: TPA2015D1

1

FEATURES

2

• Built-In SpeakerGuardTMAutomatic Gain
Control (AGC) with Enhanced Battery Tracking

– Limits Battery Current Consumption
– Prevents Audio Clipping

• 2 W into 8 Ω Load From 3.6 V Supply (6% THD)

• Integrated Adaptive Boost Converter THD). With 85% typical efficiency, the TPA2015D1
– Increases Efficiency at Low Output Power

• Low Quiescent Current of 1.7 mA from 3.6 V

• Operates From 2.5 V to 5.2 V

• Thermal and Short-Circuit Protection with
Auto Recovery

• Three Gain Settings: 6 dB, 15.5 dB, and 20 dB

• Independent Control for Boost and Class-D

• Pin-to-Pin Compatible with TPA2013D1

• Available in 1.954 mm × 1.954 mm 16-ball
WCSP Package

APPLICATIONS

• Cell Phones, PDA, GPS

• Portable Electronics and Speakers

DESCRIPTION

The TPA2015D1 is a high efficiency Class-D audio
power amplifier with battery-tracking SpeakerGuard™
AGC technology and an integrated adaptive boost
converter that enhances efficiency at low output
power. It drives up to 2 W into an 8 Ω speaker (6%

helps extend battery life when playing audio.
The built-in boost converter generates a 5.5 V supply

voltage for the Class-D amplifier. This provides a
louder audio output than a stand-alone amplifier
directly connected to the battery. The
SpeakerGuardTMAGC adjusts the Class-D gain to
limit battery current and prevent heavy clipping.

The TPA2015D1 has an integrated low-pass filter to
improve the RF rejection and reduce DAC
out-of-band noise, increasing the signal to noise ratio
(SNR).

The TPA2015D1 is available in a space saving

1.954 mm × 1.954 mm, 0.5 mm pitch WCSP package
(YZH).

SIMPLIFIED APPLICATION DIAGRAM

1

2SpeakerGuard is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2010, Texas Instruments Incorporated

IN-

VBAT

IN+

PVDD

AGND

OUT-

OUT+

GAIN

Oscillator

Boost

Converter

Battery

Monitor

+

–

PWM

H-

Bridge

GND

PVDD

PVOUT

GND

Bias &

Control

END

ENB

SW

Gain

Select:

+20 dB

+15.5 dB

+6 dB

AGC

AGC

PVDD

OUT+

OUT-

GND

GND

GND

VBAT

ENB

SW

AGC

END

IN-

PVOUT

GND

IN+

GAIN

D4

C4

B4

A4

D3

C3

B3

A3

D2

B2

A2

C2

D1

C1

B1

A1

WCSP (YZH)PACKAGE

(TOP VIEW)

SymbolSide

TPA2015D1

SLOS638 –MAY 2010

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

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FUNCTIONAL BLOCK DIAGRAM

DEVICE PINOUT

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TPA2015D1

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SLOS638 –MAY 2010

PIN FUNCTIONS

PIN INPUT/ OUTPUT/ DESCRIPTION

NAME WCSP

PVDD A1 I Class-D power stage supply voltage.
PVOUT A2 O Boost converter output.
SW A3 I Boost and rectifying switch input.
GND A4, C2, C4, D1 P Ground; all ground balls must be connected for proper functionality.
OUT+ B1 O Positive audio output.
GAIN B2 I Gain selection pin.
AGC B3 I Enable and select AGC.
VBAT B4 P Supply voltage.
OUT– C1 O Negative audio output.
END C3 I Enable for the Class-D amplifier; set to logic high to enable.
IN+ D2 I Positive audio input.
IN– D3 I Negative audio input.
ENB D4 I Enable for the boost converter; set to logic high to enable.

POWER

(I/O/P)

ORDERING INFORMATION

T

A

–40°C to 85°C

PACKAGED DEVICES

16-ball, 1.954mm × 1.954 mm WSCP TPA2015D1YZHR OEN

16-ball, 1.954 mm × 1.954 mm WSCP TPA2015D1YZHT OEN

(1)

PART NUMBER

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com.

(2) The YZH package is only available taped and reeled. The suffix “R” indicates a reel of 3000, the suffix “T” indicates a reel of 250.

(2)

SYMBOL

ABSOLUTE MAXIMUM RATINGS

Over operating free–air temperature range, TA= 25°C (unless otherwise noted)

Supply voltage VBAT –0.3 V 6 V
Input Voltage, V
Output continuous total power dissipation See the Thermal Information Table
Operating free-air temperature range, T
Operating junction temperature range, T
Storage temperature range, T
Minimum load impedance 6 Ω

ESD Protection CDM 500 V

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

IN+, IN– –0.3 V VBAT + 0.3 V

I

A

J

STG

HBM 2000 V

MM 100 V

(1)

MIN MAX

–40°C 85°C
–40°C 150°C
–65°C 150°C

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TPA2015D1

SLOS638 –MAY 2010

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THERMAL INFORMATION

TPA2015D1

THERMAL METRIC

q

JA

q

JC(top)

q

JB

y

JT

y

JB

q

JC(bottom)

Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case(bottom) thermal resistance

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as

specified in JESD51-7, in an environment described in JESD51-2a.

(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific

JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB

temperature, as described in JESD51-8.

(5) The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted

from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).

(6) The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted

from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).

(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific

JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

(1)

YZH UNITS

16 PINS

(2)

(3)

(4)

(5)

(6)

(7)

75
22
26

0.5
25

n/a

°C/W

RECOMMENDED OPERATING CONDITIONS

MIN MAX UNIT

Supply voltage, VBAT 2.5 5.2 V
V
V
T
T

High–level input voltage, END, ENB 1.3 V

IH

Low–level input voltage, END, ENB 0.6 V

IL

Operating free-air temperature –40 85 °C

A

Operating junction temperature –40 150 °C

J

ELECTRICAL CHARACTERISTICS

VBAT= 3.6 V, Gain = 6 dB, R

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VBAT supply voltage range END = VBAT, ENB = VBAT, AGC options 1, 2, and 3 2.5 5.2

Class-D supply voltage END = ENB = VBAT, boost converter active 5.2 5.8 V
range

Power supply ripple
rejection

Operating quiescent
current

Shutdown quiescent VBAT = 2.5 V to 5.2 V, END = ENB = GND
current

Gain control pin voltage Gain = 15.5 dB (float) 0.4 × VBAT 0.6 × VBAT V

= Float, TA= 25°C, RL= 8 Ω + 33 mH (unless otherwise noted)

AGC

END = 0 V, ENB = VBAT 2.5 5.2

END = VBAT, ENB = VBAT, AGC option 0 2.8 5.2

END = VBAT, ENB = 0 V 3.1 5.25 V
VBAT = 2.5 V to 5.2 V, END = ENB = VBAT 85
VBAT = 2.5 V to 5.2 V, END = VBAT, ENB = 0 V

(pass through mode)

75

END = 0 V, ENB = VBAT 0.5 mA
END = ENB = VBAT 1.7 2.2 mA

0.2 3 mA

Gain = 6 dB (connect to GND) 0 0.25 × VBAT

Gain = 20 dB (connect to VBAT) 0.75 × VBAT

V

dB

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SLOS638 –MAY 2010

ELECTRICAL CHARACTERISTICS (continued)

VBAT= 3.6 V, Gain = 6 dB, R

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

AGC control pin voltage V

AGC control pin output
current

Input common-mode IN+, IN–
voltage range

Start-up time Boost converter only 1 4 ms

= Float, TA= 25°C, RL= 8 Ω + 33 mH (unless otherwise noted)

AGC

AGC with no inflection point, R
AGC option 1 (inflection = 3.55 V), R
AGC option 2 (inflection = 3.78 V) , R
AGC option 3 (inflection = 3.96 V) , R

= Open 2

AGC

= 39 kΩ (±5%) 1.36 1.75

AGC

= 27 kΩ (±5%) 0.94 1.2

AGC

= 18 kΩ (±5%) 0 0.825

AGC

37.6 40 42.4 mA

0.6 1.3 V

Boost converter followed by Class-D amplifier 6 10

Class-D amplifier only 5 6

OPERATING CHARACTERISTICS

VBAT= 3.6 V, TA= 25°C, RL= 8 Ω + 33 mH (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BOOST CONVERTER

Boost converter output voltage range, I
PVOUT

I

L

Boost converter input current limit Power supply current 1500 mA

Boost converter start-up current limit 450 mA
h Boost converter efficiency END = 0 V, I
f

BOOST

Boost converter frequency 1.2 MHz

CLASS-D AMPLIFIER

P

V

A

ΔA
V

O

O

V

V

OOS

Output power THD = 1%, VBAT = 3 V, f = 1 kHz 1500 mW

Output peak voltage 5.2 V

Closed-loop voltage gain 0.4 × VBAT < GAIN < 0.6 × VBAT (or float) 15.5 dB

Gain accuracy –0.5 0.5 dB

Output offset voltage 10 mV

Input impedance (per input pin) AV= 15.5 dB 14.9 kΩ
R

IN

Input impedance in shutdown (per input

pin)
Z

O

f

CLASS-D

E

N

THD+N Total harmonic distortion plus noise

AC PSRR dB

Output impedance in shutdown END = 0 V 2 kΩ

Switching frequency 560 600 640 kHz

Noise output voltage A-weighted, GAIN = 15.5 dB 33.4 mV

(1)

AC-Power supply ripple rejection (output

referred)

= 700 mA 5.2 5.8 V

BOOST

= 100 mA constant 88%

PVOUT

THD = 1%, VBAT = 2.5 V, f = 1 kHz 1200

THD = 1%, VBAT = 3.6 V, f = 1 kHz 1700
THD = 1%, VBAT = 3 V, f = 1 kHz,

6 dB crest factor sine burst, no clipping
GAIN < 0.25 × VBAT 6

GAIN > 0.75 × VBAT 20

AV= 6 dB 27.8

AV= 20 dB 10.1
END = 0 V 88.4 kΩ

A-weighted, GAIN = 6 dB 24.8

A-weighted, GAIN = 20 dB 42.4
PO= 100 mW, f = 1 kHz 0.06%
PO= 500 mW, f = 1 kHz 0.07%
200 mVPPripple, f = 217 Hz 75
200 mVPPripple, f = 4 kHz 70

RMS

(1) A-weighted

Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5

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IN+

–

IN–

+

VBAT

1 Fm

1 Fm

2.2 Hm

Load

OUT+

OUT–

Measurement

Output

TPA2015D1

Measurement

Input

–

+

–

+

10 Fm

22 Fm

Supply

GND

30kHz

Low-Pass

Filter

SW PVDD

PVOUT

TPA2015D1

SLOS638 –MAY 2010

OPERATING CHARACTERISTICS (continued)

VBAT= 3.6 V, TA= 25°C, RL= 8 Ω + 33 mH (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

f

= 20 Hz, CIN= 1 mF –0.2 –0.1 0

Audio frequency passband ripple dB

AUTOMATIC GAIN CONTROL

AGC gain range 0 20 dB

AGC gain step size 0.5 dB

AGC attack time (gain decrease) 0.026 ms/dB

AGC release time (gain increase) 1600 ms/dB

Limiter threshold voltage VBAT > inflection point 6.15 V

VBAT vs. Limiter slope VBAT < inflection point 3 V/V

AGC inflection point AGC option 2, R

AUDIO

f

= 16 kHz, CIN= 1 mF –0.2 –0.1 0

AUDIO

AGC option 1, R

AGC option 3, R

TEST SET-UP FOR GRAPHS

= 39 kΩ (±5%) 3.55

AGC

= 27 kΩ (±5%) 3.78 V

AGC

= 18 kΩ (±5%) 3.96

AGC

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(1) The 1 µF input capacitors (CI) were shorted for input common-mode voltage measurements.
(2) A 33 mH inductor was placed in series with the load resistor to emulate a small speaker for efficiency measurements.
(3) The 30 kHz low-pass filter is required even if the analyzer has an internal low-pass filter. An R-C low pass filter

(100 Ω, 47 nF) is used on each output for the data sheet graphs.

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V

BAT

− V

Supply Current − A

2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0

0

2m

4m

6m

8m

10m

Gain = 20 dB
AGC = Float
RL = 8 Ω + 33 µH

Frequency − Hz

Amplitude − dBV

0 2k 4k 6k 8k 10k 12k 14k 16k 18k 20k 22k 24k

−150

−140

−130

−120

−110

−100

−90

−80
Gain = 20 dB
AGC = Float
RL = 8 Ω + 33 µH
No Input Signal

PO − Output Power − W

I

VBAT

− Supply Current − A

0.0 0.5 1.0 1.5 2.0 2.5

0.0

0.2

0.4

0.6

0.8

1.0

V

BAT

= 3.0 V

V

BAT

= 3.6 V

V

BAT

= 4.2 V

Gain = 20 dB
RL = 8 Ω + 33 µH

f = 1 kHz
R

AGC

= Float

VIN − Input Voltage − Vp

V

OUT

− Output Voltage − Vp

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

1

2

3

4

5

6

V

BAT

= 2.5 V

V

BAT

= 2.7 V

V

BAT

= 3.0 V

V

BAT

= 3.3 V

V

BAT

= 3.6 V

V

BAT

= 4.2 V

V

BAT

= 5.0 V

Gain = 20 dB
RL = 8 Ω + 33 µH
R

AGC

= 27 kΩ

P OutputPower W

O

– –

Efficiency %–

0.01 0.1 1 2

0

20

40

60

80

100

V

BAT

=2.7V

V

BAT

=3.0V

V

BAT

=3.6V

V

BAT

=4.2V

V

BAT

=5.0V

Gain=20dB
R =8 +33 H

L

W m

f=1kHz

AutoPassThrough Boosted

PO − Output Power − W

THD+N − Total Harmonic Distortion + Noise − %

1m 10m 100m 1 4

0.01

0.1

1

10

100

V

BAT

= 2.8 V

V

BAT

= 3.0 V

V

BAT

= 3.6 V

V

BAT

= 4.2 V

V

BAT

= 5.0 V

RL = 8 Ω + 33 µH
R

AGC

= Float, Boost Enabled

Gain = 6 dB, f = 1 kHz

TPA2015D1

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V

= 3.6 V, Gain = 6 dB, CI= 1 µF, C

BAT

otherwise specified.

SPACER

Figure 1. QUIESCENT SUPPLY CURRENT vs SUPPLY Figure 2. A-WEIGHTED OUTPUT NOISE vs FREQUENCY

BOOST

VOLTAGE

TYPICAL CHARACTERISTICS

= 22 µF, L

= 2.2 µH, AGC = Float, ENB = END = V

BOOST

SLOS638 –MAY 2010

, and Load = 8 Ω + 33 µH unless

BAT

Figure 3. SUPPLY CURRENT vs OUTPUT POWER Figure 4. PEAK OUTPUT VOLTAGE vs PEAK INPUT

Figure 5. TOTAL EFFICIENCY vs OUTPUT POWER Figure 6. TOTAL HARMONIC DISTORTION + NOISE vs

Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 7

VOLTAGE

OUTPUT POWER

Product Folder Link(s): TPA2015D1

V

BAT

− Supply Voltage − V

V

OUT

− Maximum Output Voltage − Vp

2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0

1.0

2.0

3.0

4.0

5.0

6.0

R

AGC

= Float

R

AGC

= 39 kΩ

R

AGC

= 27 kΩ

R

AGC

= 18 kΩ

RL = 8 Ω + 33 µH
VIN = 0.45 V

RMS

f = 1 kHz
Gain = 20 dB

f − Frequency − Hz

THD+N − Total Harmonic Distortion + Noise − %

20 100 1k 10k 20k

0.001

0.01

0.1

1

10

Po = 25 mW
Po = 125 mW
Po = 200 mW

V

BAT

= 2.5 V
RL = 8 Ω + 33 µH
R

AGC

= Float

Gain = 6 dB

V

BAT

− Supply Voltage − V

P

O

− Output Power − W

2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0

0.0

0.5

1.0

1.5

2.0

2.5

R

AGC

= Float

R

AGC

= 39 kΩ

R

AGC

= 27 kΩ

R

AGC

= 18 kΩ

RL = 8 Ω + 33 µH
VIN = 0.45 V

RMS

f = 1 kHz
Gain = 20 dB

f − Frequency − Hz

THD+N − Total Harmonic Distortion + Noise − %

20 100 1k 10k 20k

0.001

0.01

0.1

1

10

Po = 50 mW
Po = 250 mW
Po = 500 mW

V

BAT

= 3.6 V
RL = 8 Ω + 33 µH
R

AGC

= Float

Gain = 6 dB

V

BAT

− Supply Voltage − V

I

VBAT

− Supply Current − A

2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0

0.0

0.2

0.4

0.6

0.8

1.0

R

AGC

= Float

R

AGC

= 39 kΩ

R

AGC

= 27 kΩ

R

AGC

= 18 kΩ

RL = 8 Ω + 33 µH
VIN = 0.45 V

RMS

f = 1 kHz
Gain = 20 dB

f − Frequency − Hz

THD+N − Total Harmonic Distortion + Noise − %

20 100 1k 10k 20k

0.001

0.01

0.1

1

10

Po = 100 mW
Po = 500 mW
Po = 1W

V

BAT

= 4.2 V
RL = 8 Ω + 33 µH
R

AGC

= Float

Gain = 6 dB

TPA2015D1

SLOS638 –MAY 2010

TYPICAL CHARACTERISTICS (continued)

V

= 3.6 V, Gain = 6 dB, CI= 1 µF, C

BAT

Load = 8 Ω + 33 µH unless otherwise specified.

SPACER

Figure 7. MAXIMUM OUTPUT VOLTAGE vs SUPPLY Figure 8. TOTAL HARMONIC DISTORTION + NOISE vs

VOLTAGE FREQUENCY

BOOST

= 22 µF, L

= 2.2 µH, AGC = Float, ENB = END = V

BOOST

BAT

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, and

Figure 9. OUTPUT POWER vs SUPPLY VOLTAGE Figure 10. TOTAL HARMONIC DISTORTION + NOISE vs

Figure 11. SUPPLY CURRENT vs SUPPLY VOLTAGE Figure 12. TOTAL HARMONIC DISTORTION + NOISE vs

8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated

FREQUENCY

FREQUENCY

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