TEXAS INSTRUMENTS TPA2012D2 Technical data

RTJYZH

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VDD = 3.6 V, 10%

0

0.50

1

1.50

2

2.50

4 9 14 19 24 29 34

P

O

− Output Power − W

RL − Load Resistance − W

WCSP Thermally Limited Region

VDD = 5 V, 1%

VDD = 2.5 V, 1%

VDD = 2.5 V, 10%

VDD = 3.6 V, 1%

VDD = 3.6 V, 10%

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

2.1 W/CH STEREO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

FEATURES APPLICATIONS

• Output Power By Package:

– QFN:

– 2.1 W/Ch Into 4 Ω at 5 V
– 1.4 W/Ch Into 8 Ω at 5 V
– 720 mW/Ch Into 8 Ω at 3.6 V

– WCSP:

– 1.2 W/Ch Into 4 Ω at 5 V

(1)

– 1.3 W/Ch Into 8 Ω at 5 V
– 720 mW/Ch Into 8 Ω at 3.6 V

• Only Two External Components Required

• Power Supply Range: 2.5 V to 5.5 V

• Independent Shutdown Control for Each

Channel The TPA2012D2 features independent shutdown

• Selectable Gain of 6, 12, 18, and 24 dB

• Internal Pulldown Resistor On Shutdown Pins

• High PSRR: 77 dB at 217 Hz

• Fast Startup Time (3.5 ms)

• Low Supply Current

• Low Shutdown Current

• Short-Circuit and Thermal Protection

• Space Saving Packages

– 2,01 mm X 2,01 mm NanoFree™ WCSP

(YZH)

– 4 mm X 4 mm Thin QFN (RTJ) with

PowerPAD™

(1)

Thermally limited

• Wireless or Cellular Handsets and PDAs

• Portable DVD Player

• Notebook PC

• Portable Radio

• Portable Gaming

• Educational Toys

• USB Speakers

DESCRIPTION

The TPA2012D2 is a stereo, filter-free, Class-D
audio amplifier (class-D amp) available in a WCSP,
QFN, or PWP package. The TPA2012D2 only
requires two external components for operation.

controls for each channel. The gain can be selected
to 6, 12, 18, or 24 dB utilizing the G0 and G1 gain
select pins. High PSRR and differential architecture
provide increased immunity to noise and RF
rectification. In addition to these features, a fast
startup time and small package size make the
TPA2012D2 class-D amp an ideal choice for both
cellular handsets and PDAs.

TPA2012D2

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NanoFree, PowerPAD are trademarks of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Copyright © 2004–2007, Texas Instruments Incorporated

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TPA2012D2

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

DESCRIPTION (CONTINUED)

The TPA2012D2 is capable of driving 1.4 W/Ch at 5 V or 720 mW/Ch at 3.6 V into 8 Ω . The TPA2012D2 is also
capable of driving 4 Ω . The TPA2012D2 is thermally limited in WCSP and may not achieve 2.1 W/Ch for 4 Ω .
The maximum output power in the WCSP is determined by the ability of the circuit board to remove heat. The
output power versus load resistance graph below shows thermally limited region of the WCSP in relation to the
QFN package. The TPA2012D2 provides thermal and short circuit protection.

AVAILABLE OPTIONS

T

A

–40 ° C to 85 ° C

2 mm x 2 mm, 16-ball WCSP (YZH) TPA2012D2YZH AKR

4 mm x 4 mm, 20-pin QFN (RTJ) TPA2012D2RTJ AKS

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature (unless otherwise noted)

V

V

T
T
T

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

Supply voltage, AVDD, PVDD

SS

Input voltage –0.3 to V

I

Continuous total power dissipation See Dissipation Rating Table
Operating free-air temperature range –40 to 85 ° C

A

Operating junction temperature range –40 to 150 ° C

J

Storage temperature range –65 to 85 ° C

stg

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

In active mode –0.3 to 6.0 V
In shutdown mode –0.3 to 7.0 V

PACKAGE PART NUMBER SYMBOL

(1)

VALUE UNIT

+ 0.3 V

DD

DISSIPATION RATING TABLE

PACKAGE

RTJ 5.2 W 41.6 mW/ ° C 3.12 W 2.7 W

YZH 1.2 W 9.12 mW/ ° C 690 mW 600 mW

(1) This data was taken using 2 oz trace and copper pad that is soldered directly to a JEDEC standard 4-layer 3 in × 3 in PCB.

TA= 25 ° C DERATING TA= 75 ° C TA= 85 ° C

POWER RATING

(1)

FACTOR POWER RATING POWER RATING

RECOMMENDED OPERATING CONDITIONS

V
V
V
T

2

Supply voltage AVDD, PVDD 2.5 5.5 V

SS

High-level input voltage SDL, SDR, G0, G1 1.3 V

IH

Low-level input voltage SDL, SDR, G0, G1 0.35 V

IL

Operating free-air temperature ÷ 40 85 ° C

A

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MIN MAX UNIT

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TPA2012D2

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

ELECTRICAL CHARACTERISTICS

TA= 25 ° C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

|V

| Output offset voltage (measured differentially) 5 25 mV

OO

PSRR Power supply rejection ratio VDD= 2.5 to 5.5 V –75 –55 dB
V

icm

Common-mode input voltage 0.5 VDD–0.8 V
CMRR Common-mode rejection ration –69 –50 dB
|IIH| High-level input current VDD= 5.5 V, VI= V

|IIL| Low-level input current VDD= 5.5 V, VI= 0 V 5 µ A

I

DD

r

DS(on)

Supply current

Static drain-source on-state resistance VDD= 3.6 V 570 m Ω

Output impedance in shutdown mode V
f

(sw)

Switching frequency VDD= 2.5 V to 5.5 V 250 300 350 kHz

Closed-loop voltage gain dB

Inputs ac grounded, AV= 6 dB,
VDD= 2.5 to 5.5 V

Inputs shorted together,
VDD= 2.5 to 5.5 V

DD

50 µ A

VDD= 5.5 V, No load or output filter 6 9
VDD= 3.6 V, No load or output filter 5 7.5 mA
VDD= 2.5 V, No load or output filter 4 6
Shutdown mode 1.5 µ A
VDD= 5.5 V 500

VDD= 2.5 V 700

= 0.35 V 2 k Ω

( SDR, SDL)

G0, G1 = 0.35 V 5.5 6 6.5
G0 = VDD, G1 = 0.35 V 11.5 12 12.5
G0 = 0.35 V, G1 = V
G0, G1 = V

DD

DD

17.5 18 18.5

23.5 24 24.5

OPERATING CHARACTERISTICS

TA= 25 ° C, RL= 8 Ω (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

P

O

Output power (per channel) VDD= 3.6 V, f = 1 kHz, THD = 10% 0.72 W

RL= 8 Ω

RL= 4 Ω VDD= 5.0 V, f = 1 kHz, THD = 10% 2.1

THD+N Total harmonic distortion plus noise

PO= 1 W, VDD= 5 V, AV= 6 dB, f = 1 kHz 0.14%
PO= 0.5 W, VDD= 5 V, AV= 6 dB, f = 1 kHz 0.11%

Channel crosstalk f = 1 kHz –85 dB

k

SVR

Supply ripple rejection ratio dB

VDD= 5 V, AV= 6 dB, f = 217 Hz –77
VDD= 3.6 V, AV= 6 dB, f = 217 Hz –73

CMRR Common mode rejection ratio VDD= 3.6 V, VIC= 1 Vpp, f = 217 Hz –69 dB

Av = 6 dB 28.1

Input impedance k Ω

Av = 12 dB 17.3
Av = 18 dB 9.8
Av = 24 dB 5.2

Start-up time from shutdown VDD= 3.6 V 3.5 ms

V

n

Output voltage noise µ V

VDD= 3.6 V, f = 20 to 20 kHz,
Inputs are ac grounded, AV= 6 dB

VDD= 5.0 V, f = 1 kHz, THD = 10% 1.4

No weighting 35
A weighting 27

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to Battery

V

DD

OUTR+

GND

SDR

INR+

300 k

C

S

Right Input

SDL

300 k

G0

OUTR−

OUTL+

OUTL−

G1

INR−

INL+

INL−

G1

Gain

G0

V/V dB

Left Input

Gain

Adjust

PWM

Gain

Adjust

PWM

H −

Bridge

H −

Bridge

Internal

Oscillator

Bias

Circuitry

6
12
18
24

2
4
8
16

0
1
0
1

0
0
1
1

Short−Circuit

Protection

TPA2012D2

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

BLOCK DIAGRAM

4

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AGND

OUTL+

PGND

INL− G1

G0

SDR

INL+

AVDD

SDL

OUTR−

INR−

PVDD

OUTR+

OUTL−

INR+

A1

B1

C1

D1

A2 A3 A4

AGND

INR+

INR−

INL+

INL−

G0

OUTR+

PVDD

PGND

OUTR−

NC

SDL

SDR

AVDD

NC

OUTL+

PVDD

PGND

G1

OUTL−

20 19 18 17 16

6 7 8 9 10

1

2

3

4

5

15

14

13

12

11

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

Terminal Functions

TERMINAL

NAME QFN WCSP

INR+ 16 D1 I Right channel positive input
INR- 17 C1 I Right channel negative input
INL+ 20 A1 I Left channel positive input
INL- 19 B1 I Left channel negative input
SDR 8 B3 I Right channel shutdown terminal (active low)
SDL 7 B4 I Left channel shutdown terminal (active low)
G0 15 C2 I Gain select (LSB)
G1 1 B2 I Gain select (MSB)
PVDD 3, 13 A2 I Power supply (Must be same voltage as AVDD)
AVDD 9 D2 I Analog supply (Must be same voltage as PVDD)
PGND 4, 12 C4 I Power ground
AGND 18 C3 I Analog ground
OUTR+ 14 D3 O Right channel positive differential output
OUTR- 11 D4 O Right channel negative differential output
OUTL+ 2 A3 O Left channel positive differential output
OUTL- 5 A4 O Left channel negative differential output
NC 6, 10 N/A No internal connection
Thermal Pad Connect the thermal pad of QFN or PWP package to PCB GND

I/O DESCRIPTION

TPA2012D2

WCSP PIN OUT RTJ PIN OUT

TOP VIEW TOP VIEW

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TPA2012D2

IN+

IN-

OUT+

OUT-

V

DD

GND

C

I

C

I

R

I

R

I

Measurement

Output

+

-

1 Fm

+

-

Load

30kHz

Filter

LowPass

Measurement

Input

+

-

V

DD

TPA2012D2

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

TEST SET-UP FOR GRAPHS (per channel)

(1) CIwas Shorted for any Common-Mode input voltage measurement.
(2) A 33- µ H inductor was placed in series with the load resistor to emulate a small speaker for efficiency measurements.
(3) The 30–kHz low–pass filter is required even if the analyzer has an internal low–pass filter. An RC low pass filter (100

Ω , 47 nF) is used on each output for the data sheet graphs.

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0.01

0.1

1

10

0.01 0.1 1 3

2.5 V

3.6 V

THD+N − Total Harmonic Distortion + Noise − %

PO − Output Power − W

RL = 8 ,
f = 1 kHz,
AV  24 dB

5 V

20

0.01

0.1

1

10

20

0.01

0.1

1 4

2.5 V

3.6 V

5 V

PO − Output Power − W

RL = 4 ,
f = 1 kHz,
AV  24 dB

THD+N − Total Harmonic Distortion + Noise − %

0.01

0.1

1

10

20

0.01 0.1 1 3

2.5 V

3.6 V

PO − Output Power − W

RL = 8 ,
f = 1 kHz,
AV  6 dB

5 V

THD+N − Total Harmonic Distortion + Noise − %

0.1

1

20 100 1 k

10 k

20 k

f − Frequency − Hz

VDD = 2.5 V,
RL = 4 W,
CI = 1 mF,
AV = 6 dB

0.01

120 mW

350 mW

240 mW

THD+N − Total Harmonic Distortion + Noise − %

0.1

1

20 100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 2.5 V,
RL = 8 W,
CI = 1 mF,
AV = 6 dB

0.01

90 mW

180 mW

THD+N − Total Harmonic Distortion + Noise − %

260 mW

0.01

0.1

1

10

20

0.01

0.1

1 4

2.5 V

3.6 V

5 V

PO − Output Power − W

RL = 4 ,
f = 1 kHz,
AV  6 dB

THD+N − Total Harmonic Distortion + Noise − %

0.1

1

20 100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 3.6 V,
RL = 4 W,
CI = 1 mF,
AV = 6 dB

0.01

275 mW

550 mW

825 mW

THD+N − Total Harmonic Distortion + Noise − %

0.1

1

20 100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 3.6 V,
RL = 8 W,
CI = 1 mF,
AV = 6 dB

0.01

190 mW

375 mW

560 mW

THD+N − Total Harmonic Distortion + Noise − %

0.1

1

20 100 1 k 10 k 20 k

f − Frequency − Hz

VDD = 5 V,
RL = 4 W,
CI = 1 mF,
AV = 6 dB

0.01

550 mW

1.1 W

1.65 W

THD+N − Total Harmonic Distortion + Noise − %

TPA2012D2

SLOS438C – DECEMBER 2004 – REVISED MARCH 2007

TYPICAL CHARACTERISTICS

TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION

vs vs vs

OUTPUT POWER OUTPUT POWER OUTPUT POWER

Figure 1. Figure 2. Figure 3.

TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION

vs vs vs

OUTPUT POWER FREQUENCY FREQUENCY

TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION

Figure 4. Figure 5. Figure 6.

vs vs vs

FREQUENCY FREQUENCY FREQUENCY

Figure 7. Figure 8. Figure 9.

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