TEXAS INSTRUMENTS TMS27C040 Technical data

查询TMS27C040供应商
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
D
D
Single 5-V Power Supply
D
Industry Standard 32-Pin Dual In-Line Package and 32-Lead Plastic Leaded Chip Carrier
D
All Inputs/Outputs Fully TTL Compatible
D
Static Operation (No Clocks, No Refresh)
D
Max Access/Min Cycle Time
± 10%
V
CC
’27C/PC040-10 100 ns ’27C/PC040-12 120 ns ’27C/PC040-15 150 ns
D
8-Bit Output For Use in Microprocessor-Based Systems
D
Power-Saving CMOS Technology
D
3-State Output Buffers
D
400-mV Assured DC Noise Immunity With Standard TTL Loads
D
Latchup Immunity of 250 mA on All Input and Output Pins
D
No Pullup Resistors Required
D
Low Power Dissipation (VCC = 5.5 V) – Active...275 mW Worst Case – Standby...0.55 mW Worst Cas E
(CMOS-Input Levels)
D
Temperature Range Options
description
The TMS27C040 devices are 524288 by 8-bit (4194304-bit), ultraviolet (UV) light erasable, electrically programmable read-only memories (EPROMs).
The TMS27PC040 devices are 524 288 by 8-bit (4194304-bit), one-time programmable (OTP) electrically programmable read-only memories (PROMs).
These devices are fabricated using CMOS technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by the Series 74 TTL circuits. Each output can drive one Series 74 TTL circuit without external resistors.
TMS27C040 J PACKAGE (TOP VIEW)
V
1
PP
A16
2
A15
3
A12
4
A7
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
DQ0
13
DQ1
14
DQ2
15
GND
5
A7
6
A6
7
A5
8
A4 A3
9
A2
10
A1
11
A0
12
DQ0
13
A0–A18 Address Inputs DQ0–DQ7 Inputs (programming)/Outputs E G GND Ground V
CC
V
PP
Only in program mode.
16
TMS27PC040
FM PACKAGE
(TOP VIEW)
A12
A15
A16
3213231
430
14
15 16 17 18 19
DQ1
DQ2
GND
PIN NOMENCLATURE
Chip Enable Output Enable
5-V Supply 13-V Power Supply
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
PP
V
DQ3
CC
V
DQ4
V
CC
A18 A17 A14 A13 A8 A9 A1 1 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
A18
20
DQ5
A17
29 28 27 26 25 24 23 22 21
DQ6
A14 A13 A8 A9 A1 1 G A10 E DQ7
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
Copyright 1997, Texas Instruments Incorporated
1
TMS27C040 524288 BY 8-BIT UV ERASABLE
MODE
Signature Mode
VILVILVCCV
V
TMS27PC040 524288 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
description (continued)
The data outputs are 3-state for connecting multiple devices to a common bus The TMS27C040 is offered in a 600-mil ceramic dual-in-line package (J suffix). The TMS27C040 is offered with
two choices of temperature ranges of 0°C to 70°C (JL suffix) and – 40°C to 85°C (JE suffix). (See Table 1.) The TMS27PC040 is offered in a 32-lead plastic leaded chip carrier package (FM suffix). The TMS27PC040
is offered with two choices of temperature ranges of 0°C to 70°C (JL suffix) and –40°C to 85° C (JE suffix).
Table 1. Temperature Range Suffixes
SUFFIX FOR OPERATING
FUNCTION
TMS27C040-XXX JL JE
TMS27PC040-XXX FML FME
These EPROMs and PROMS operate from a single 5-V supply (in the read mode), and they are ideal for use in microprocessor-based systems. One other (13 V) supply is needed for programming. All programming signals are TTL level. For programming outside the system, existing EPROM programmers can be used.
FREE-AIR TEMPERATURE
RANGES
0°C to 70°C – 40°C to 85°C
operation
The seven modes of operation are listed in T able 2. The read mode requires a single 5-V supply . All inputs are TTL level except for V
Read V
Output Disable V
Standby V
Programming V
Program Inhibit V
Verify V
X can be VIL or V
VH = 12 V ± 0.5 V
IH
read/output disable
When the outputs of two or more TMS27C040s or TMS27PC040s are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from competing outputs of the other devices. To read the output of a single device, a low level signal is applied to the E devices in the circuit should have their outputs disabled by applying a high level signal to one of these pins.
during programming (13 V), and VH (12 V) on A9 for the signature mode.
PP
Table 2. Operation Modes
A9 A0 DQ0–DQ7
X X Data Out X X Hi-Z X X Hi-Z X X Data In X X Hi-Z X X Data Out
V
H
IL
V
IH
E G V
IL IL
IH
IL IH IH
V
IL
V
IH
X V
V
IH
V
IH
V
IL
PP
X V
V
CC CC
V
PP
V
PP
V
PP
FUNCTION
V
CC
CC
V
CC
V
CC
V
CC
V
CC
V
CC
CC
MFG Code 97
Device Code 50
and G pins. All other
latchup immunity
2
Latchup immunity on the TMS27C040 and TMS27PC040 is a minimum of 250 mA on all inputs and outputs. This feature provides latchup immunity beyond any potential transients at the P .C. board level when the EPROM is interfaced to industry standard TTL or MOS logic devices. The input/output layout approach controls latchup without compromising performance or packing density.
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
IDENTIFIER
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
power down
Active I 100 µA by applying a high CMOS input on E
erasure (TMS27C040)
Before programming, the TMS27C040 EPROM is erased by exposing the chip through the transparent lid to a high intensity UV-light (wavelength 2537 Å). The recommended minimum exposure dose (UV intensity × exposure time) is 15-Ws/cm lamp must be located about 2.5 cm above the chip during erasure. After erasure, all bits are in the high state. Normal ambient light contains the correct wavelength for erasure; therefore, when using the TMS27C040, the window must be covered with an opaque label. After erasure (all bits in logic high state), logic lows are programmed into the desired locations. A programmed low can be erased only by UV light.
initializing (TMS27PC040)
The OTP TMS27PC040 PROM is provided with all bits in logic high state, then logic lows are programmed into the desired locations. Logic lows programmed into an OTP PROM cannot be erased.
SNAP! Pulse programming
The TMS27C040 and TMS27PC040 are programmed by using the SNAP! Pulse programming algorithm. The programming sequence is shown in the SNAP! Pulse programming flow chart shown in Figure 1.
supply current can be reduced from 50 mA to 1 mA by applying a high TTL input on E and to
CC
. In this mode all outputs are in the high-impedance state.
2
. A typical 12-mW/cm2, filterless UV lamp erases the device in 21 minutes. The
The initial setup is V
= 13 V , VCC = 6.5 V , E = VIH, and G = VIH. Once the initial location is selected, the data
PP
is presented in parallel (eight bits) on pins DQ0 through DQ7. Once addresses and data are stable, the programming mode is achieved when E
is pulsed low (VIL) with a pulse duration of t
w(PGM)
. Every location is
programmed only once before going to interactive mode. In the interactive mode, the word is verified at V
is not read, the programming is performed by pulling E
= 13 V , VCC = 6.5 V , E = VIH, and G = VIL. If the correct data
PP
low with a pulse duration of t
w(PGM)
. This sequence of verification and programming is performed up to a maximum of 10 times. When the device is fully programmed, all bytes are verified with V
= VPP = 5 V ± 10%.
CC
program inhibit
Programming can be inhibited by maintaining high level inputs on the E
and G pins.
program verify
Programmed bits can be verified with V
= 13 V when G = VIL, and E = VIH.
PP
signature mode
The signature mode provides access to a binary code identifying the manufacturer and type. This mode is activated when A9 (pin 26) is forced to 12 V. Two identifier bytes are accessed by toggling A0. All other addresses must be held low. The signature code for the TMS27C040 is 9750. A0 low selects the manufacturer’s code 97 (Hex), and A0 high selects the device code 50 (Hex), as shown in Table 3.
Table 3. Signature Mode
PINS
A0 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 HEX
MANUFACTURER CODE V
DEVICE CODE V
E
= G = VIL, A1-A8 = VIL, A9 = VH, A10-A18 = VIL, VPP = VCC.
IL
IH
1 0 0 1 0 1 1 1 97 0 1 0 1 0 0 0 0 50
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3
TMS27C040 524288 BY 8-BIT UV ERASABLE TMS27PC040 524288 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
Start
Address = First Location
VCC = 6.5 V ± 0.25 V, VPP = 13 V ± 0.25 V
Program One Pulse = tw = 100 µs
Last
Address?
Yes
Address = First Location
X = 0
Increment
Address
Verify
One Byte
Pass
Fail
No
Increment Address
Program One Pulse = tw = 100 µs
No
X = 10?X = X + 1
Program
Mode
Interactive
Mode
No
VCC = VPP = 5 V ± 0.5 V
Last
Address?
Yes Yes
Compare All Bytes
to Original
Data
Pass
Device Passed
Fail
Device Failed
Figure 1. SNAP! Pulse Programming Flow Chart
Final
Verification
4
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
logic symbol
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers are for the J package.
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
A10
A11 A12 A13 A14 A15 A16 A17
A18
12 11 10 9 8 7 6 5 27 26 23 25 4 28 29 3 2 30 31 22
E
24
G
EPROM 524 288 × 8
0
0
A
524 287
18
[PWR DWN]
&
EN
A A A A A A A A
13 14 15 17 18 19 20 21
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V Supply voltage range, V Input voltage range (see Note 1), All inputs except A9 –0.6 V to V
Output voltage range, with respect to V
Operating free-air temperature range (’27C040-_ _JL and ’27PC040-_ _FML) 0°C to 70°C. . . . . . . . . . . . . .
Operating free-air temperature range (’27C040-_ _JE and ’27PC040 _ _ FME) – 40°C to 85°C. . . . . . . . . . .
Storage temperature range, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND.
(see Note 1) –0.6 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
(see Note 1) –0.6 V to 14 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PP
A9 –0.6 V to 13 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(see Note 1) –0.6 V to VCC + 1 V. . . . . . . . . . . . . . . . . . . . . . . . . . .
SS
–65°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
CC
+ 1 V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
5
TMS27C040 524288 BY 8-BIT UV ERASABLE
VCCSuppl
oltage
VPPSuppl
oltage
VIHHigh-level dc input voltage
VILLow-level dc input voltage
VOHHigh-level dc output voltage
V
VOLLow-level dc output voltage
V
I
V
supply current (standby)
TMS27PC040 524288 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
recommended operating conditions
MIN NOM MAX UNIT
pp
y v
pp
y v
p
p
T
Operating free-air temperature
A
T
Operating free-air temperature ’27C040-_ _JE –40 85 °C
A
NOTE 2: VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The device must not be inserted
into or removed from the board when VPP or VCC is applied.
electrical characteristics over recommended ranges of supply voltage and operating free-air temperature
PARAMETER TEST CONDITIONS MIN MAX UNIT
p
p
I
I
I
O
I
PP1
I
PP2
CC1
I
CC2
Minimum cycle time = maximum access time.
Input current (leakage) VI = 0 V to 5.5 V ±1 µA Output current (leakage) VO = 0 V to V VPP supply current VPP = VCC = 5.5 V 10 µA VPP supply current (during program pulse) VPP = 12.75 V 50 mA
pp
CC
VCC supply current (active)
Read mode (see Note 2) 4.5 5 5.5 V SNAP! Pulse programming algorithm 6.25 6.5 6.75 V Read mode VCC– 0.6 VCC+ 0.6 V SNAP! Pulse programming algorithm 12.75 13 13.25 V
TTL 2 VCC + 0.5 V CMOS VCC– 0.2 VCC+ 0.5 V TTL – 0.5 0.8 V CMOS – 0.5 0.2 V
’27C040-_ _JL ’27PC040-_ _FML
IOH = – 400 µA 2.4 IOH = – 20 µA VCC – 0.1 IOL = 2.1 mA 0.4 IOL = 20 µA 0.1
CC
TTL-Input level VCC = 5.5 V, E = V CMOS-Input level VCC = 5.5 V, E = V
E = VIL,V t
= minimum cycle time,
cycle
outputs open
CC
IH CC
= 5.5 V
0 70 °C
±1 µA
1 mA
100 µA
50 mA
capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz
C
i
C
o
All typical values are at TA = 25°C and nominal voltages.
§
Capacitance measurements are made on sample basis only.
6
Input capacitance VI = 0 V 4 8 pF Output capacitance VO = 0 V 8 12 pF
PARAMETER
TEST CONDITIONS MIN TYP§MAX UNIT
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
C
L
100 F
Input t
f
ns
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
switching characteristics over recommended ranges of operating conditions (see Notes 3 and 4)
’27C040-10
PARAMETER TEST CONDITIONS
t t t
t
t
† NOTES: 3. For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
Access time from address 100 120 150 ns
a(A)
Access time from chip enable
a(E)
Output enable time from G
en(G)
Output disable time from G or E, whichever
dis
occurs first Output data valid time after change of
v(A)
address, E
Value calculated from 0.5-V delta to measured output level.
4. Common test conditions apply for t
, or G, whichever occurs first
0.8 V for logic low. (See Figure 2)
except during programming.
dis
=
p
= 1 Series 74 TTL load, Input tr 20 ns,
p
,
≤ 20
’27PC040-10
MIN MAX MIN MAX MIN MAX
0 50 0 50 0 50 ns
0 0 0 ns
switching characteristics for programming: VCC = 6.5 V and VPP = 13 V (SNAP! Pulse), TA = 25°C (see Note 3)
PARAMETER MIN MAX UNIT
t
dis(G)
t
en(G)
NOTE 3: For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
Output disable time from G 0 100 ns Output enable time from G 150 ns
0.8 V for logic low. (See Figure 2)
’27C040-12 ’27PC040-12
100 120 150 ns
50 50 50 ns
’27C040-15 ’27PC040-15
UNIT
timing requirements for programming
t
w(PGM)
t
su(A)
t
su(E)
t
su(G)
t
su(D)
t
su(VPP)
t
su(VCC)
t
h(A)
t
h(D)
Pulse duration, program SNAP! Pulse programming algorithm 95 100 105 µs Setup time, address 2 µs Setup time, E 2 µs Setup time, G 2 µs Setup time, data 2 µs Setup time, V Setup time, V Hold time, address 0 µs Hold time, data 2 µs
PP CC
MIN NOM MAX UNIT
2 µs 2 µs
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
7
TMS27C040 524288 BY 8-BIT UV ERASABLE TMS27PC040 524288 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Output
Under Test
2.08 V
RL = 800
CL = 100 pF (see Note A)
2.4 V
0.4 V
NOTES: A. CL includes probe and fixture capacitance.
B. AC testing inputs are driven at 2.4 V for logic high and 0.4 V for logic low . Timing measurements are made at 2 V for logic high and
0.8 V for logic low for both inputs and outputs.
2 V
0.8 V
Figure 2. AC Testing Output Load Circuit and Waveform
A0–A18
DQ0–DQ7
E
G
Hi-Z
Addresses Valid
t
a(A)
t
a(E)
t
en(G)
2 V
0.8 V
t
v(A)
Output Valid
t
dis
Hi-Z
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
Figure 3. Read-Cycle Timing
8
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Program
A0–A18
t
su(A)
DQ0–DQ7
V
PP
V
CC
E
G
13-V VPP and 6.5-V VCC for SNAP! Pulse programming
t
w(PGM)
Data-In Stable
t
su(D)
t
su(VPP)
t
su(E)
t
su(VCC)
Address Stable
Hi-Z
t
en(G)
t
h(D)
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
Verify
V
IH
V
IL
t
h(A)
V
/V
IH
OH
/V
V
OL
IL
V
PP
V
CC
V
CC
V
CC
V
IH
V
IL
V
IH
V
IL
t
su(G)
Data-Out
Stable
t
dis(G)
Figure 4. Program-Cycle Timing (SNAP! Pulse Programming)
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
9
TMS27C040 524288 BY 8-BIT UV ERASABLE TMS27PC040 524288 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
FM (R-PQCC-J32) PLASTIC J-LEADED CHIP CARRIER
Seating Plane
0.140 (3,56)
0.495 (12,57)
0.485 (12,32)
0.453 (11,51)
0.447 (11,35)
4
301
0.129 (3,28)
0.123 (3,12)
0.049 (1,24)
0.043 (1,09)
0.008 (0,20) NOM
0.132 (3,35)
0.004 (0,10)
13
5
14
0.050 (1,27)
20
29
0.020 (0,51)
0.015 (0,38)
0.595 (15,11)
0.585 (14,86)
0.553 (14,05)
0.547 (13,89)
0.030 (0,76) TYP
21
4040201-4/B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
10
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-016
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
TMS27C040 524288 BY 8-BIT UV ERASABLE
TMS27PC040 524288 BY 8-BIT
PROGRAMMABLE READ-ONLY MEMORY
SMLS040F – NOVEMBER 1990 – REVISED SEPTEMBER 1997
J (R-CDIP-T**) CERAMIC SIDE-BRAZE DUAL-IN-LINE PACKAGE
24 PIN SHOWN
B
24
1
0.090 (2,29)
0.060 (1,53)
0.100 (2,54)
0.065 (1,65)
0.045 (1,14)
13
12
0.018 (0,46) MIN
0.022 (0,56)
0.014 (0,36)
C
0.175 (4,45)
0.140 (3,56)
Seating Plane
0.125 (3,18) MIN
Lens Protrusion
0.010 (0,25) MAX
A
0°–10°
0.012 (0,30)
0.008 (0,20)
DIM
NOTES: A. All linear dimensions are in inches (millimeters).
PINS**
MAX
A
MIN MAX
B
MIN MAX
C
MIN
B. This drawing is subject to change without notice. C. This package can be hermetically sealed with a ceramic lid using glass frit. D. Index point is provided on cap for terminal identification only on press ceramic glass frit seal only.
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.265(32,13) 1.265(32,13)
1.235(31,37) 1.235(31,37)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
24
WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.465(37,21) 1.465(37,21)
1.435(36,45) 1.435(36,45)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
28
WIDE WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
1.668(42,37) 1.668(42,37)
1.632(41,45) 1.632(41,45)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
32
WIDE
NARR
0.624(15,85) 0.624(15,85)
0.590(14,99) 0.590(14,99)
2.068(52,53) 2.068(52,53)
2.032(51,61) 2.032(51,61)
0.541(13,74) 0.598(15,19)
0.514(13,06) 0.571(14,50)
4040084/B 04/95
40
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
11
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Copyright 1998, Texas Instruments Incorporated
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