TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Input Offset Voltage Drift...Typically
0.1 µV/Month, Including the First 30 Days
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C...3 V to 16 V
–40 °C to 85°C...4 V to 16 V
–55 °C to 125°C...5 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
D
Low Noise...68 nV/√Hz Typically at
f = 1 kHz
D
Output Voltage Range includes Negative
Rail
D
High Input Impedance...10
12
Ω Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also
Available in Tape and Reel
D
Designed-In Latch-Up Immunity
description
The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage
drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable
amplifier. These devices use the Texas Instruments silicon-gate LinCMOS technology, which provides
offset-voltage stability far exceeding the stability available with conventional metal-gate processes.
Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10
mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents,
in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good
choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,
without the power penalties of bipolar technology . General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.
The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC27L1 incorporates internal electrostatic-discharge (ESD) protection circuits that prevent functional
failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be
exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric
performance.
AVAILABLE OPTIONS
PACKAGE
T
A
VIOmax
AT 25°C
SMALL
OUTLINE
(D)
PLASTIC
DIP
(P)
2 mV TLC27L1BCD TLC27L1BCP
0°C to 70°C
2 mV
5 mV
TLC27L1BCD
TLC27L1ACD
TLC27L1BCP
TLC27L1ACP
10 mV TLC27L1CD TLC27L1CP
2 mV TLC27L1BID TLC27L1BIP
–40°C to 85°C
2 mV
5 mV
TLC27L1BID
TLC27L1AID
TLC27L1BIP
TLC27L1AIP
10 mV TLC27L1ID TLC27L1IP
–55°C to 125°C 10 mV TLC27L1MD TLC27L1MP
The D package is available taped and reeled. Add R suffix to the device type
(e.g., TLC27L1BCDR).
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
OFFSET N1
IN –
IN +
GND
V
DD
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.
equivalent schematic
P3
P1
R1
IN –
IN +
P2 R2
P4
R6
N5
R5
C1
N3
N2N1
R3
D1
R4
D2
N4
OFFSET
N1
N2
OFFSET
OUT
GND
R7
N6
N10
N7
N9
N13
N12
N11
P12
P11
P10
P7A
P8
P9A
P9B
P7B
P6BP6A
P5
V
DD
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) – 0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, T
A
: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case temperature for 60 seconds, T
C
: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW
P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIX
MIN MAX MIN MAX MIN MAX
UNIT
Supply voltage, V
DD
3 16 4 16 5 16 V
p
VDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5
Common-mode input voltage, V
IC
VDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5
V
Operating free-air temperature, T
A
0 70 –40 85 –55 125 °C
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC27L1C, TLC27L1AC, TLC27L1BC
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC27L1C
Full range 12 12
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC27L1AC
IC
,
RS = 50 Ω,
Full range 6.5 6.5
mV
RI = 1 MΩ
25°C 0.24 2 0.26 2
TLC27L1BC
Full range 3 3
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
70°C
1.1 1 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
70°C 7 300 8 300
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
70°C 40 600 50 600
pA
Common-mode input
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
voltage range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3.2 4.1 8 8.9
V
OH
High-level output voltage
VID = 100 mV ,
0°C 3 4.1 7.8 8.9
V
RL= 1 MΩ
70°C 3 4.2 7.8 8.9
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV ,
0°C 0 50 0 50
mV
I
OL
=
0
70°C 0 50 0 50
25°C 50 520 50 870
A
VD
Large-signal differential
p
RL= 1 MΩ,
0°C 50 700 50 1030
V/mV
voltage am lification
See Note 6
70°C 50 380 50 660
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 95 60 97
dB
70°C 60 95 60 97
25°C 70 97 70 97
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
0°C 60 97 60 97
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
70°C 60 98 60 98
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= V
DD
25°C 65 95 nA
V
= V
/2
,
25°C 10 17 14 23
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
0°C 12 21 18 33
µA
No load
70°C 8 14 11 20
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC27L1I, TLC27L1AI, TLC27L1BI
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
25°C 1.1 10 1.1 10
TLC27L1I
Full range 13 13
p
V
O
= 1.4 V,
V
= 0 V,
25°C 0.9 5 0.9 5
VIOInput offset voltage
TLC27L1AI
IC
,
RS = 50 Ω,
Full range 7 7
mV
RL = 1 MΩ
25°C 0.24 2 0.26 2
TLC27L1BI
Full range 3.5 3.5
α
VIO
Average temperature coefficient
of input offset voltage
25°C to
85°C
1.1 1 µV/°C
p
V
= V
/2,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
85°C 24 1000 26 1000
pA
p
V
= V
/2,
25°C 0.6 0.7
p
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
85°C 200 2000 220 2000
pA
Common-mode input
25°C
–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2
V
V
ICR
voltage range (see Note 5)
Full range
–0.2
to
3.5
–0.2
to
8.5
V
25°C 3 4.1 8 8.9
V
OH
High-level output voltage
VID = 100 mV ,
–40°C 3 4.1 7.8 8.9
V
RL= 1 MΩ
85°C 3 4.2 7.8 8.9
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
–40°C 0 50 0 50
mV
I
OL
=
0
85°C 0 50 0 50
25°C 50 520 50 870
A
VD
Large-signal differential
p
RL= 1 MΩ
–40°C 50 900 50 1550
V/mV
voltage am lification
See Note 6
85°C 50 330 50 585
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = V
ICR
min
–40°C 60 95 60 97
dB
85°C 60 95 60 98
25°C 70 97 70 97
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
–40°C 60 97 60 97
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
85°C 60 98 60 98
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= V
DD
25°C 65 95 nA
V
= V
/2
,
25°C 10 17 14 23
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
–40°C 16 27 25 43
µA
No load
85°C 17 13 10 18
†
Full range is –40 to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC27L1M
PARAMETER
TEST
T
A
†
VDD = 5 V VDD = 10 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
p
VO = 1.4 V,
VIC = 0 V,
25°C 1.1 10 1.1 10
VIOInput offset voltage
RS = 50 Ω,
RL = 1 MΩ
Full range 12 12
mV
α
VIO
Average temperature coefficient
of input offset voltage
25°C to
125°C
1.4 1.4 µV/°C
p
V
= V
/2,
25°C 0.1 0.1 pA
IIOInput offset current (see Note 4)
ODD
,
VIC = VDD/2
125°C 1.4 15 1.8 15 nA
p
V
= V
/2,
25°C 0.6 0.7 pA
IIBInput bias current (see Note 4)
ODD
,
VIC = VDD/2
125°C 9 35 10 35 nA
Common-mode input
25°C
0
to
4
–0.3
to
4.2
0
to
9
–0.3
to
9.2
V
V
ICR
voltage range (see Note 5)
Full range
0
to
3.5
0
to
8.5
V
25°C 3.2 4.1 8 8.9
V
OH
High-level output voltage
VID = 100 mV ,
–55°C 3 4.1 7.8 8.8
V
RL= 1 MΩ
125°C 3 4.2 7.8 9
25°C 0 50 0 50
V
OL
Low-level output voltage
VID = –100 mV,
–55°C 0 50 0 50
mV
I
OL
=
0
125°C 0 50 0 50
25°C 50 520 50 870
A
VD
Large-signal differential
p
RL= 1 MΩ,
–55°C 25 1000 25 1775
V/mV
voltage am lification
See Note 6
125°C 25 200 25 380
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = V
ICR
min
–55°C 60 95 60 97
dB
125°C 60 85 60 91
25°C 70 97 70 97
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V,
–55°C 60 97 60 97
dB
(∆VDD/∆VIO)
V
O
= 1.4
V
125°C 60 98 60 98
I
I(SEL)
Input current (BIAS SELECT) V
I(SEL)
= V
DD
25°C 65 95 nA
V
= V
/2
,
25°C 10 17 14 23
I
DD
Supply current
V
O
VDD/2,
VIC = VDD/2,
–55°C 17 30 28 48
µA
No load
125°C 7 12 9 15
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC27L1C,
TLC27L1AC,
TLC27L1BC
UNIT
MIN TYP MAX
25°C 0.03
V
I(PP)
= 1 V
0°C 0.04
RL = 1 MΩ,
p
()
70°C 0.03
SR
Slew rate at unity gain
C
L
=
20 pF
,
See Fi
g
ure 33
25°C 0.03
V/µs
See Figure 33
V
I(PP)
= 2.5 V
0°C 0.03
()
70°C 0.02
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 5
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
0°C 6
kHz
R
L
= 1 MΩ,
See Figure 33
70°C 4.5
25°C 85
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
0°C
100
kHz
See Figure 35
70°C 65
25°C 34°
φ
m
Phase margin
V
I
= 10 mV,
p
f
=
B
1
,
0°C 36°
C
L
= 20 F,
See Figure 35
70°C 30°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC27L1C,
TLC27L1AC,
TLC27L1BC
UNIT
MIN TYP MAX
25°C 0.05
V
I(PP)
= 1 V
0°C 0.05
RL = 1 MΩ,
p
()
70°C 0.04
SR
Slew rate at unity gain
C
L
= 20 pF,
See Fi
g
ure 33
25°C 0.04
V/µs
See Figure 33
V
I(PP)
= 5.5 V
0°C 0.05
()
70°C 0.04
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 1
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
0°C 1.3
kHz
R
L
= 1 MΩ,
See Figure 33
70°C 0.9
25°C 110
B
1
Unity-gain bandwidth
V
I
= 10 mV,
CL = 20 pF,
0°C
125
kHz
See Figure 35
70°C 90
25°C 38°
φ
m
Phase margin
V
I
=
10 mV
,
=
p
f
=
B
1
,
0°C 40°
C
L
= 20 F,
See Figure 35
70°C 34°
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC27L1I,
TLC27L1AI,
TLC27L1BI
UNIT
MIN TYP MAX
25°C 0.03
V
I(PP)
= 1 V
–40°C 0.04
RL = 1 MΩ,
p
()
85°C 0.03
SR
Slew rate at unity gain
C
L
=
20 pF
,
See Fi
g
ure 33
25°C 0.03
V/µs
See Figure 33
V
I(PP)
= 2.5 V
–40°C 0.04
()
85°C 0.02
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 5
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–40°C 7
kHz
R
L
= 1 MΩ,
See Figure 33
85°C 4
25°C 85
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–40°C
130
MHz
See Figure 35
85°C 55
25°C 34°
φ
m
Phase margin
V
I
= 10 mV,
p
f
=
B
1
,
–40°C 38°
C
L
= 20 F,
See Figure 35
85°C 28°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC27L1C,
TLC27L1AC,
TLC27L1BC
UNIT
MIN TYP MAX
25°C 0.05
V
I(PP)
= 1 V
–40°C 0.06
RL = 1 MΩ,
p
()
85°C 0.03
SR
Slew rate at unity gain
C
L
= 20 pF,
See Fi
g
ure 33
25°C 0.04
V/µs
See Figure 33
V
I(PP)
= 5.5 V
–40°C 0.05
()
85°C 0.03
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 1
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–40°C 1.4
kHz
R
L
= 1 MΩ,
See Figure 33
85°C 0.8
25°C 110
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–40°C
155
MHz
See Figure 35
85°C 80
25°C 38°
φ
m
Phase margin
V
I
=
10 mV,l
=
p
f
=
B
1
,
–40°C 42°
C
L
= 20 F,
See Figure 35
85°C 32°
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
TLC27L1M
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
25°C 0.03
V
I(PP)
= 1 V
–55°C 0.04
RL = 1 MΩ,
p
()
125°C 0.02
SR
Slew rate at unity gain
C
L
= 20 pF,
See Fi
g
ure 33
25°C 0.03
V/µs
See Figure 33
V
I(PP)
= 2.5 V
–55°C 0.04
()
125°C 0.02
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 5
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–55°C 8
kHz
R
L
= 1 MΩ,
See Figure 33
125°C 3
25°C 85
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–55°C
140
kHz
See Figure 35
125°C 45
25°C 34°
φ
m
Phase margin
V
I
= 10 mV,
p
f
=
B
1
,
–55°C 39°
C
L
= 20 F,
See Figure 35
125°C 25 °
operating characteristics at specified free-air temperature, VDD = 10 V
TLC27L1M
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
25°C 0.05
V
I(PP)
= 1 V
–55°C 0.06
RL = 1 MΩ,
p
()
125°C 0.03
SR
Slew rate at unity gain
C
L
= 20 pF,
See Fi
g
ure 33
25°C 0.04
V/µs
See Figure 33
V
I(PP)
= 5.5 V
–55°C 0.06
()
125°C 0.03
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 34
RS = 20 Ω,
25°C 68
nV/√Hz
25°C 1
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–55°C 1.5
kHz
R
L
= 1 MΩ,
See Figure 33
125°C 0.7
25°C 110
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–55°C
165
kHz
See Figure 35
125°C 70
25°C 38°
φ
m
Phase margin
V
I
=
10 mV
,
p
f
=
B
1
,
–55°C 43°
C
L
= 20 F,
See Figure 35
125°C 29 °
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
V
IO
Input offset voltage Distribution 1, 2
α
VIO
T emperature coef ficient Distribution 3, 4
vs High-level output current 5, 6
V
OH
High-level output voltage
vs High level out ut current
vs Supply voltage
5, 6
7
OH
gg
yg
vs Free-air temperature 8
-
p
p
vs Common mode in ut voltage
vs Differential input voltage
9, 10
11
VOLLow-level output voltage
g
vs Free-air temperature 12
vs Low-level output current 13, 14
vs Supply voltage 15
A
VD
Large-signal differential voltage amplification
vs Su ly voltage
vs Free-air temperature
15
16
VD
gg g
vs Frequency 27, 28
I
IB
Input bias current vs Free-air temperature 17
I
IO
Input offset current vs Free-air temperature 17
V
I
Maximum input voltage vs Supply voltage 18
pp
vs Supply voltage 19
IDDSupply current
yg
vs Free-air temperature 20
vs Supply voltage 21
SR
Slew rate
yg
vs Free-air temperature 22
Bias-select current vs Supply voltage 23
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 24
vs Free-air temperature 25
B1Unity-gain bandwidth
vs Supply voltage 26
vs Supply voltage 29
φ
m
Phase margin
vs Su ly voltage
vs Free-air temperature
29
30
φ
m
g
vs Capacitance load 31
V
n
Equivalent input noise voltage vs Frequency 32
Phase shift vs Frequency 27, 28
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 1
–5
0
Percentage of Units – %
VIO – Input Offset Voltage – mV
5
70
–4 –3 –2 –1 0 1 2 3 4
10
20
30
40
50
60
DISTRIBUTION OF TLC27L1
INPUT OFFSET VOLTAGE
VDD = 5 V
TA = 25°C
P Package
905 Amplifiers Tested From 6 Wafer Lots
Figure 2
60
50
40
30
20
10
43210–1–2–3–4
70
5
VIO – Input Offset Voltage – mV
Percentage of Units – %
0
–5
DISTRIBUTION OF TLC27L1
INPUT OFFSET VOLTAGE
P Package
TA = 25°C
VDD = 10 V
905 Amplifiers Tested From 6 Wafer Lots
Figure 3
60
50
40
30
20
10
86420–2–4–6–8
70
10
Percentage of Units – %
0
–10
DISTRIBUTION OF TLC27L1
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
α
VIO
– Temperature Coefficient – µV/°C
(1) 12.1 µV/°C
(1) 19.2 µV/°C
Outliers:
P Package
TA = 25°C to 125°C
VDD = 5 V
356 Amplifiers Tested From 8 Wafer Lots
Figure 4
–10
0
Percentage of Units – %
α
VIO
– Temperature Coefficient – µV/°C
10
70
–8 –6 –4 –2 0 2 4 6 8
10
20
30
40
50
60
DISTRIBUTION OF TLC27L1
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
356 Amplifiers Tested From 8 Wafer Lots
VDD = 10 V
P Package
Outliers:
(1) 18.7 µV/°C
(1) 11.6 µV/°C
TA = 25°C to 125°C
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 5
0
0
VOH– High-Level Output Voltage – V
IOH – High-Level Output Current – mA
–10
5
–2 –4 –6 –8
1
2
3
4
VDD = 3 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
TA = 25°C
VID = 100 mV
VDD = 5 V
VDD = 4 V
Figure 6
0
0
IOH – High-Level Output Current – mA
–40
16
–10 –20 –30
2
4
6
8
10
12
14
TA = 25°C
VID = 100 mV
VDD = 16 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
–35–25–15–5
VOH– High-Level Output Voltage – V
V
OH
Figure 7
0
0
VDD – Supply Voltage – V
16
16
2 4 6 8 10 12 14
2
4
6
8
10
12
14
VID = 100 mV
RL = 1 MΩ
TA = 25°C
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
VOH– High-Level Output Voltage – V
V
OH
Figure 8
–75
–2.4
TA – Free-Air Temperature – °C
125
–1.6
–50 –25 0 25 50 75 100
–2.3
–2.2
–2.1
–2
–1.9
–1.8
–1.7
IOH = –5 mA
VID = 100 mV
VDD = 5 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
VOH– High-Level Output Voltage – V
V
OH
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 9
0
300
VOL – Low-Level Output V oltage – mV
VIC – Common-Mode Input Voltage – V
4
700
123
400
500
600
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
650
550
450
350
V
OL
TA = 25°C
IOL = 5 mA
VDD = 5 V
VID = –1 V
VID = –100 mV
Figure 10
250
0
VIC – Common-Mode Input Voltage – V
300
350
400
450
500
246810
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
13 579
VOL – Low-Level Output V oltage – mV
V
OL
VDD = 10 V
IOL = 5 mA
TA = 25°C
VID = –1 V
VID = –2.5 V
VID = –100 mV
Figure 11
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
0
VID – Differential Input Voltage – V
–10–2 –4 –6 –8
800
700
600
500
400
300
200
100
0
–1 –3 –5 –7 –9
VOL – Low-Level Output V oltage – mV
V
OL
IOL = 5 mA
VIC = VID/2
TA = 25°C
VDD = 10 V
VDD = 5 V
Figure 12
–75
0
TA – Free-Air Temperature – °C
125
900
–50 –25 0 25 50 75 100
100
200
300
400
500
600
700
800
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
VOL – Low-Level Output V oltage – mV
V
OL
VIC = 0.5 V
VID = –1 V
IOL = 5 mA
VDD = 10 V
VDD = 5 V
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 13
0
1
8
0
1 2 3 4 5 6 7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VID = –1 V
VIC = 0.5 V
TA = 25°C
VDD = 3 V
VDD = 4 V
VDD = 5 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
IOL – Low-Level Output Current – mA
VOL – Low-Level Output Voltage – V
V
OL
Figure 14
0
IOL – Low-Level Output Current – mA
3
30
0
5 10 15 20 25
0.5
1
1.5
2
2.5
TA = 25°C
VIC = 0.5 V
VID = –1 V
VDD = 10 V
VDD = 16 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
VOL – Low-Level Output Voltage – V
V
OL
Figure 15
0
VDD – Supply Voltage – V
2000
16
0
2 4 6 8 10 12 14
200
400
600
800
1000
1200
1400
1600
1800
RL = 1 MΩ
TA = –55°C
–40°C
TA = 0°C
25°C
70°C
85°C
125°C
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
AVD – Large-Signal Differential
Á
Á
A
VD
Voltage Amplification – V/mV
Figure 16
1007550250–25–50
0
125
TA – Free-Air Temperature – °C
–75
RL = 1 MΩ
VDD = 5 V
VDD = 10 V
1800
1600
1400
1200
1000
800
600
400
200
2000
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
AVD – Large-Signal Differential
A
VD
Voltage Amplification – V/mV
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 17
0.1
125
10000
45 65 85 105
1
10
100
1000
25
TA – Free-Air Temperature – °C
INPUT BIAS AND INPUT OFFSET
CURRENTS
vs
FREE-AIR TEMPERATURE
VDD = 10 V
VIC = 5 V
See Note A
35 55 75 95 115
I
IB
I
IO
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
– Input Bias and Input Offsert
IB
I and
I
IO
Currents – pA
Figure 18
0
VDD – Supply Voltage – V
16
16
0
246810 12 14
2
4
6
8
10
12
14
MAXIMUM INPUT VOLTAGE
vs
SUPPLY VOLTAGE
TA = 25°C
– Maximum Input Voltage – V
V
I
max
Figure 19
TA = –55°C
25°C
70°C
125°C
0
IDD – Supply Current – mA
VDD – Supply Voltage – V
45
16
0
2 4 6 8 10 12 14
5
10
15
20
25
30
35
40
–40°C
0°C
No Load
VO = VDD/2
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
DD
I
Aµ
Figure 20
VO = VDD/2
No Load
VDD = 10 V
VDD = 5 V
–75
TA – Free-Air Temperature – °C
30
125
0
–50 –25 0 25 50 75 100
5
10
15
20
25
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
IDD – Supply Current – mA
DD
I
Aµ
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 21
SR – Slew Rate – V/s
CL = 20 pF
RL = 1 MΩ
V
I(PP)
= 1 V
AV = 1
See Figure 33
TA= 25°C
0
VDD – Supply Voltage – V
0.07
16
0.00
2 4 6 8 10 12 14
0.01
0.02
0.03
0.04
0.05
0.06
SLEW RATE
vs
SUPPLY VOLTAGE
sµ
Figure 22
SLEW RATE
vs
FREE-AIR TEMPERATURE
V
I(PP)
= 5.5 V
VDD = 10 V
VDD = 5 V
V
I(PP)
= 1 V
VDD = 5 V
V
I(PP)
= 2.5 V
VDD = 10 V
V
I(PP)
= 1 V
–75
TA – Free-Air Temperature – °C
0.07
125
0.00
–50 –25 0 25 50 75 100
0.01
0.02
0.03
0.04
0.05
0.06
CL = 20 pF
RL = 1 MΩ
See Figure 33
AV = 1
SR – Slew Rate – V/s
sµ
Figure 23
0
Bias-Select Current – nA
VDD – Supply Voltage – V
150
16
0
2 4 6 8 10 12 14
30
60
90
120
TA = 25°C
BIAS-SELECT CURRENT
vs
SUPPLY VOLTAGE
135
105
75
45
15
V
I(SEL)
= V
DD
Figure 24
0.1
f – Frequency – kHz
10
100
0
1
2
3
4
5
6
7
8
9
110
V
DD
= 10 V
VDD = 5 V
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
See Figure 33
RL = 1 MΩ
TA = 125°C
TA = 25°C
TA = –55°C
– Maximum Peak-to-Peak Output Voltage – V
V
O(PP)
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 25
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
VDD = 5 V
VI = 10 mV
CL = 20 pF
See Figure 35
–75
B1 – Unity-Gain Bandwidth – kHz
TA – Free-Air Temperature – °C
150
125
30
–50 –25 0 25 50 75 100
50
70
90
110
130
B
1
Figure 26
0
VDD – Supply Voltage – V
140
16
50
2 46810 12 14
60
70
80
90
100
110
120
130
TA = 25°C
CL = 20 pF
VI = 10 mV
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
B1 – Unity-Gain Bandwidth – kHz
B
1
See Figure 35
1
f – Frequency – Hz
1 M
0.1
10 100 1 k 10 k 100 k
1
10
1
10
2
10
3
10
4
10
5
10
6
150°
120°
90°
60°
30°
0°
180°
Phase Shift
TA = 25°C
RL = 1 MΩ
VDD = 5 V
A
VD
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10
7
Phase Shift
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
Figure 27
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
VDD = 10 V
RL = 1 MΩ
TA = 25°C
Phase Shift
180°
0°
30°
60°
90°
120°
150°
10
6
10
4
10
3
10
2
10
1
1
100 k10 k1 k10010
0.1
1 M
f – Frequency – Hz
1
10
5
10
7
A
VD
Phase Shift
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
Figure 28
Figure 29
PHASE MARGIN
vs
SUPPLY VOLTAGE
0
m – Phase Margin
VDD – Supply Voltage – V
42°
16
30°
2 4 6 8 10 12 14
32°
34°
36°
38°
40°
See Figure 35
VI = 10 mV
TA = 25°C
CL = 20 pF
m
φ
Figure 30
See Figure 35
VI = 10 mV
CL = 20 pF
VDD = 5 mV
–75
TA – Free-Air Temperature – °C
40°
125
20°
–50 –25 0 25 50 75 100
24°
28°
32°
36°
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
38°
34°
30°
26°
22°
m – Phase Margin
m
φ
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 31
VDD = 5 mV
TA = 25°C
See Figure 35
VI = 10 mV
0
CL – Capacitive Load – pF
37°
100
25°
20 40 60 80
27°
29°
31°
33°
35°
PHASE MARGIN
vs
CAPACITIVE LOAD
10 30 50 70 90
m – Phase Margin
m
φ
Figure 32
75
1
VN – Equivalent Input Noise Voltage – nV/Hz
f – Frequency – Hz
200
1000
0
25
50
100
125
150
175
10 100
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/ Hz
TA = 25°C
RS = 20Ω
VDD = 5 V
See Figure 34
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC27L1 is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.
+
V
DD
C
L
R
L
V
O
V
I
V
I
V
O
R
L
C
L
–
+
V
DD+
V
DD–
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
–
Figure 33. Unity-Gain Amplifier
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits (continued)
V
DD
–
+
V
DD+
–
+
1/2 V
DD
20 Ω
V
O
2 kΩ
20 Ω
V
DD–
20 Ω 20 Ω
2 kΩ
V
O
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 34. Noise-Test Circuit
100 Ω
V
DD
–
+
10 kΩ
V
O
C
L
1/2 V
DD
V
I
V
I
C
L
100 Ω
V
O
10 kΩ
–
+
V
DD+
V
DD–
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 35. Gain-of-100 Inverting Amplifier
input bias current
Due to the high input impedance of the TLC27L1 operational amplifiers, attempts to measure the input bias
current can result in erroneous readings. The bias current at normal room ambient temperature is typically less
than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are of fered to avoid
erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 36). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias-current test (using a
picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test socket.
One word of caution: many automatic testers as well as some bench-top operational amplifier testers use the
servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires that a
device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not
feasible using this method.
TLC27L1, TLC27L1A, TLC27L1B
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PARAMETER MEASUREMENT INFORMATION
V = V
IC
41
58
Figure 36. Isolation Metal Around Device Inputs (JG and P packages)
low-level output voltage
To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. When conditions other than these are
to be used, please refer to the Typical Characteristics section of this data sheet.
input offset-voltage temperature coefficient
Erroneous readings often result from attempts to measure the temperature coefficient of input offset voltage.
This parameter is actually a calculation using input offset-voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input
offset-voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
full-power response
Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often
specified two ways: full-linear response and full-peak response. The full-linear response is generally measured
by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until
the maximum frequency is found above which the output contains significant distortion. The full-peak response
is defined as the maximum output frequency , without regard to distortion, above which full peak-to-peak output
swing cannot be maintained.
Since there is no industry-wide accepted value for significant distortion, the full-peak response is specified in
this data sheet and is measured using the circuit in Figure 33. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 37). A square wave allows a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
TLC27L1, TLC27L1A, TLC27L1B
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PARAMETER MEASUREMENT INFORMATION
full-power response (continued)
(a) f = 100 Hz (b) BOM > f > 100 Hz (c) f = B
OM
(d) f > B
OM
Figure 37. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
APPLICATION INFORMATION
single-supply operation
While the TLC27L1 performs well using dual
power supplies (also called balanced or split
supplies), the design is optimized for
single-supply operation. This includes an input
common-mode voltage range that encompasses
ground as well as an output voltage range that
pulls down to ground. The supply voltage range
extends down to 3 V (C-suffix types), thus allowing
operation with supply levels commonly available
for TTL and HCMOS; however, for maximum
dynamic range, 16-V single-supply operation is
recommended.
Many single-supply applications require that a
voltage be applied to one input to establish a
reference level that is above ground. A resistive voltage divider is usually sufficient to establish this reference
level (see Figure 38). The low-input bias-current consumption of the TLC27L1 permits the use of very large
resistive values to implement the voltage divider, thus minimizing power consumption.
The TLC27L1 works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear device
supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications.
–
+
R4
V
O
V
DD
R2
R1
V
I
V
ref
R3
C
0.01 µF
V
ref
+
V
DD
R3
R1)R3
VO+
(V
ref
*
VI)
R4
R2
)
V
ref
Figure 38. Inverting Amplifier With Voltage
Reference
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
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APPLICATION INFORMATION
single-supply operation (continuted)
(b) SEPARATE BYPASSED SUPPL Y RAILS (preferred)
(a) COMMON SUPPLY RAILS
Logic
–
+
Logic Logic
Power
Supply
Supply
Power
LogicLogic
–
+
Logic
OUT
OUT
Figure 39. Common Versus Separate Supply Rails
input offset voltage nulling
The TLC27L1 offers external input-offset null control. Nulling of the input-offset voltage may be achieved by
adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper connected as shown
in Figure 40. Total nulling may not be possible.
25 kΩ
N2
V
DD
N2
N1
25 kΩ
GND
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
–
+
–
+
N1
OUTOUT
IN–
IN+
IN–
IN+
Figure 40. Input Offset-Voltage Null Circuit
input characteristics
The TLC27L1 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit
is specified at V
DD
– 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
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APPLICATION INFORMATION
input characteristics (continued)
The use of the polysilicon-gate process and the careful input circuit design gives the TLC27L1 very good input
offset-voltage drift characteristics relative to conventional metal-gate processes. Offset-voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The
offset-voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of
operation.
Because of the extremely high input impedance and resulting low bias-current requirements, the TLC27L1 is
well suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can
easily exceed bias-current requirements and cause a degradation in device performance. It is good practice
to include guard rings around inputs (similar to those of Figure 36 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 41).
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier . The low-input bias-current requirements of the TLC27L1 results in a very-low noise current,
which is insignificant in most applications. This feature makes the devices especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
–
+
V
I
V
O
V
O
–
+
V
O
V
I
–
+
V
I
(a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER
Figure 41. Guard-Ring Schemes
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
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APPLICATION INFORMATION
feedback
Operational amplifier circuits almost always
employ feedback, and since feedback is the first
prerequisite for oscillation, a little caution is
appropriate. Most oscillation problems result from
driving capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 42). The value of this
capacitor is optimized empirically.
electrostatic discharge protection
The TLC27L1 incorporates an internal ESD protection circuit that prevents functional failures at voltages up to
2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised, however, when handling
these devices as exposure to ESD may result in the degradation of the device parametric performance. The
protection circuit also causes the input bias currents to be temperature dependent and have the characteristics
of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27L1 inputs
and output were designed to withstand –100-mA surge currents without sustaining latch-up; however,
techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes
should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage
by more than 300 mV . Care should be exercised when using capacitive coupling on pulse generators. Supply
transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails
as close to the device as possible.
The current path established when latch-up occurs is usually between the positive supply rail and ground and
can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the
supply voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and
the forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance
of latch-up occurring increases with increasing temperature and supply voltages.
–
+
Figure 42. Compensation for Input
Capacitance
V
O
TLC27L1, TLC27L1A, TLC27L1B
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APPLICATION INFORMATION
output characteristics
The output stage of the TLC27L1 is designed to
sink and source relatively high amounts of current
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this high
current capability can cause device damage
under certain conditions. Output current capability
increases with supply voltage (see Figure 43).
All operating characteristics of the TLC27L1 were
measured using a 20-pF load. The devices drive
higher capacitive loads; however, as output load
capacitance increases, the resulting response
pole occurs at lower frequencies, thereby causing
ringing, peaking, or even oscillation (see Figure
44). In many cases, adding some compensation
in the form of a series resistor in the feedback loop
alleviates the problem.
(a) CL = 20 pF, RL = NO LOAD (b) CL = 260 pF, RL = NO LOAD (c) CL = 310 pF, RL = NO LOAD
Figure 44. Effect of Capacitive Loads in Low-Bias Mode
Although the TLC27L1 possesses excellent high-level output voltage and current capability, methods are
available for boosting this capability , if needed. The simplest method involves the use of a pullup resistor (R
P
)
connected from the output to the positive supply rail (see Figure 45). There are two disadvantages to the use
of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between
approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low
values of R
P
, a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load
to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the
output current.
–
+
2.5 V
V
O
C
L
– 2.5 V
V
I
TA = 25°C
f = 1 kHz
V
I(PP)
= 1 V
Figure 43. Test Circuit for Output
Characteristics
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
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APPLICATION INFORMATION
RP+
VDD–V
O
IF)
IL)
I
P
V
I
V
DD
R
P
V
O
R2
R1 R
L
I
P
I
F
I
L
IP = Pullup current required
by the operational amplifier
(typically 500 mA)
–
+
Figure 45. Resistive Pullup to Increase V
OH
5 V
0.016 µF
Low Pass
High Pass
Band Pass
R = 5 kΩ(3/d-1)
(see Note A)
0.016 µF
5 V
10 kΩ
10 kΩ
10 kΩ
5 V
V
I
5 kΩ
10 kΩ
10 kΩ
–
+
TLC27L1
–
+
TLC27L1
–
+
TLC27L1
NOTE A: d = damping factor, I/O
Figure 46. State-Variable Filter
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
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APPLICATION INFORMATION
R1, 100 kΩ
9 V
100 kΩ
C = 0.1 µF
R3, 47 kΩ
10 kΩ
10 kΩ
VO (see Note B)
9 V
VO (see Note A)
R2
9 V
FO+
1
4C(R2)
ƪ
R1
R3
ƫ
–
+
TLC27L1
–
+
TLC27L1
NOTES: A. V
O(PP)
= 8 V
B. V
O(PP)
= 4 V
Figure 47. Single-Supply Function Generator
TLC4066
V
DD
V
I
90 kΩ
9 kΩ
X1
1
1
B
V
DD
V
I
S1
S2
C
A
C
A
2
X2
2
B
1 kΩ
Analog
Switch
+
–
TLC27L1
A
V
Select S
1
S
2
10 100
NOTE A: VDD = 5 V to 12 V
Figure 48. Amplifier With Digital-Gain Selection
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
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APPLICATION INFORMATION
5 V
500 kΩ
500 kΩ
5 V
500 kΩ
0.1 µF
500 kΩ
V
O2
V
O1
–
+
TLC27L1
+
–
TLC27L1
Figure 49. Multivibrator
10 kΩ
V
O
100 kΩ
20 kΩ
V
I
–
+
TLC27L1
V
DD
NOTE A: VDD = 5 V to 16 V
Figure 50. Full-Wave Rectifier
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
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APPLICATION INFORMATION
Set
100 kΩ
V
DD
10 kΩ
100 kΩ
Reset
33 Ω
+
–
TLC27L1
NOTE A: VDD = 5 V to 16 V
Figure 51. Set/Reset Flip-Flop
5 V
0.016 µF
10 kΩ10 kΩ
V
O
0.016 µF
V
i
+
–
TLC27L1
NOTE A: Normalized to FC = 1 kHz and RL = 10 kΩ
Figure 52. Two-Pole Low-Pass Butterworth Filter
TLC27L1, TLC27L1A, TLC27L1B
LinCMOS LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS154 – DECEMBER 1995
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MECHANICAL INFORMATION
D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
4040047/ B10/94
0.228 (5,80)
0.244 (6,20)
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
1
14
0.014 (0,35)
0.020 (0,51)
A
0.157 (4,00)
0.150 (3,81)
7
8
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.010 (0,25)
PINS **
0.008 (0,20) NOM
A MIN
A MAX
DIM
Gage Plane
0.189
(4,80)
(5,00)
0.197
8
(8,55)
(8,75)
0.337
14
0.344
(9,80)
16
0.394
(10,00)
0.386
0.004 (0,10)
M
0.010 (0,25)
0.050 (1,27)
0°–8°
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Four center pins are connected to die mount pad.
E. Falls within JEDEC MS-012
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright 1998, Texas Instruments Incorporated
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