Texas Instruments SN54ACT7811GB Datasheet

SN54ACT7811
CLOCKED FIRST-IN, FIRST-OUT MEMORY
SGAS001B – FEBRUARY 1995 – REVISED MARCH 1996
Member of the Texas Instruments
Widebus
D
Independent Asynchronous Inputs and
Family
Outputs
1024 Words × 18 Bits
Read and Write Operations Can Be Synchronized to Independent System Clocks
Programmable Almost-Full/Almost-Empty Flag
description
A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN54ACT781 1 is a 1024 × 18-bit FIFO for high speed and fast access times. It processes data at rates up to 28.5 MHz and access times of 20 ns in a bit-parallel format. Data outputs are noninverting with respect to the data inputs. Expansion is easily accomplished in both word width and word depth.
The SN54ACT781 1 has normal input-bus-to-output-bus asynchronous operation. The special enable circuitry adds the ability to synchronize independent read and write (interrupts, requests) to their respective system clock.
Input-Ready, Output-Ready, and Half-Full Flags
Cascadable in Word Width and/or Word Depth
Fast Access Times of 20 ns With a 50-pF Load
High Output Drive for Direct Bus Interface
Package Options Include 68-Pin Ceramic PGA (GB) or Space-Saving 68-Pin Ceramic Quad Flatpack (HV)
1024 × 18
The SN54ACT7811 is characterized for operation from –55°C to 125°C.
GB PACKAGE
(TOP VIEW)
123456789
A B C D E
F G H
J
The SN54ACT781 1 HV is not production released.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Widebus is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 1996, Texas Instruments Incorporated
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SN54ACT7811 1024 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SGAS001B – FEBRUARY 1995 – REVISED MARCH 1996
GB-Package Terminal Assignments
TERMINAL NAME TERMINAL NAME TERMINAL NAME TERMINAL NAME
A1 Q15 B7 Q5 F2 D17 H8 D0 A2 Q13 B8 Q4 F8 WRTEN2 H9 DAF A3 Q12 B9 Q1 F9 AF/AE J1 D11 A4 Q11 C1 RESET G1 D16 J2 D10 A5 Q10 C2 Q16 G2 D15 J3 D8 A6 Q8 C8 Q2 G8 WRTCLK J4 NC A7 Q7 C9 Q0 G9 WRTEN1 J5 D7 A8 Q6 D1 OE H1 D14 J6 D6 A9 Q3 D9 HF H2 D13 J7 D5 B1 OR E1 RDEN1 H3 D12 J8 D3 B2 Q17 E2 RDEN2 H4 D9 J9 D2 B3 Q14 E9 IR H6 D4 B5 Q9 F1 RDCLK H7 D1
VCC = B4, C6, C7, D2, D7, E8, G3, G4, G6 GND = B6, C3, C4, D3, D8, F3, F7, G7, H5 NC = No internal connection
D14 D13 D12
D1 1
D10
D9
V
CC
D8
GND
D7 D6 D5 D4 D3 D2 D1 D0
HV PACKAGE
(TOP VIEW)
D17
GND
RDCLK
RDEN1
D15
D16
87 65493
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
27
28 29
31 32 33 34
30
RDEN2OERESET
CC
V
GND
OR
168672
35 36 37 38 39
66 65
CC
Q17
Q16
V
64 63 62 61
40 41 42 43
GND
Q15
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
V
CC
Q14 Q13 GND Q12 Q11 V
CC
Q10 Q9 GND Q8 Q7 V
CC
Q6 Q5 GND Q4
IR
HF
Q0
Q1
Q2
CC
V
WRTEN1
WRTEN2
CC
V
GND
AF/AE
DAF
GND
WRTCLK
The SN54ACT781 1 HV is not production released.
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GND
Q3
CC
V
SN54ACT7811
1024 × 18
CLOCKED FIRST-IN, FIRST-OUT MEMORY
SGAS001B – FEBRUARY 1995 – REVISED MARCH 1996
logic symbol
WRTCLK
WRTEN1 WRTEN2
RESET
RDCLK
RDEN1
OE
RDEN2
DAF
D0 D1 D2 D3 D4 D5 D6 D7 D8
D9 D10 D11 D12 D13 D14 D15 D16 D17
C1 G8 G9 F8 F1 E1
D1 E2 H9
H8 H7 J9 J8 H6 J7 J6 J5 J3
H4 J2 J1 H3 H2 H1 G2 G1 F2
FIFO 1024 × 18
RESET
WRTCLK
&
WRTEN
RDCLK
&
EN1
DEF ALMOST FULL
0
17
ALMOST FULL/EMPTY
RDEN
Data
Φ
HALF FULL
Data
IN RDY
OUT RDY
1
17
E9
IR
D9
HF
F9
AF/AE
B1
OR
C9
0
B9 C8 A9 B8 B7 A8 A7 A6 B5 A5 A4 A3 A2 B3 A1 C2 B2
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q11 Q12 Q13 Q14 Q15 Q16 Q17
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Pin numbers shown are for the GB package.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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SN54ACT7811 1024 × 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SGAS001B – FEBRUARY 1995 – REVISED MARCH 1996
functional block diagram
OE
D0 – D17
RDCLK
RDEN1 RDEN2
WRTCLK
WRTEN1 WRTEN2
RESET
DAF
Synchronous
Read
Control
Synchronous
Write
Control
Reset
Logic
Read
Pointer
Write
Pointer
Status-
Flag
Logic
Location 1 Location 2
1024 × 18 RAM
Location 1023 Location 1024
Register
Q0 – Q17
OR IR
HF AF/AE
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I/O
DESCRIPTION
AF/AE
F9
O
TERMINAL
NAME NO.
DAF H9 I
D0–D17
HF D9 O
IR E9 O
OE D1 I
OR B1 O
Q0–Q17
RDCLK F1 I
RDEN1,
RDEN2
RESET C1 I
Terminals listed are for the GB package.
F2, G1, G2,
H1–H4, H6–H8,
J1–J3, J5–J9
A1–A9, B2, B3, B5, B7–B9, C2,
C8, C9
E1 E2
SN54ACT7811
1024 × 18
CLOCKED FIRST-IN, FIRST-OUT MEMORY
SGAS001B – FEBRUARY 1995 – REVISED MARCH 1996
Terminal Functions
AF/AE boundary is defined by the AF/AE offset value (X). This value can be programmed during reset, or the default value of 256 can be used. The AF/AE flag is high when the FIFO contains (X + 1) or fewer words or (1025 – X) or more words. The AF/AE flag is low when the FIFO contains between (X + 2) and (1024 - X) words. Programming procedure for AF/AE – The AF/AE flag is programmed during each reset cycle. The AF/AE offset value (X) is either a user-defined value or the default of X = 256. Instructions to program AF/AE using both methods are as follows:
User-defined X Step 1: Step 2: Step 3: Step 4: Default X T o redefine the AF/AE flag using the default value of X = 256, hold DAF high during the reset
cycle.
Define almost full. The high-to-low transition of DAF stores the binary value of data inputs as the AF/AE offset value (X). With DAF flag using X.
Data inputs for 18-bit-wide data to be stored in the memory. Data lines D0–D8 also carry the AF/AE
I
offset value (X) on a high-to-low transition of the DAF Half-full flag. HF is high when the FIFO contains 513 or more words and is low when it contains 512
or fewer words. Input-ready flag. IR is high when the FIFO is not full and low when the device is full. During reset, IR
is driven low on the rising edge of the second write clock (WRTCLK) pulse. IR is then driven high on the rising edge of the second WRTCLK pulse after RESET is driven low, IR is driven high on the second WRTCLK pulse after the first valid read.
Output enable. The data-out (Q0–Q17) outputs are in the high-impedance state when OE is low. OE must be high before the rising edge of read clock (RDCLK) to read a word from memory.
Output ready flag. OR is high when the FIFO is not empty and low when it is empty. During reset, OR is set low on the rising edge of the third read clock (RDCLK) pulse. OR is set high on the rising edge of the third RDCLK pulse to occur after the first word is written into the FIFO. OR is set low on the rising edge of the first RDCLK pulse after the last word is read.
Data outputs. The first data word to be loaded into the FIFO is moved to the data-out (Q0–Q17) register on the rising edge of the third read clock (RDCLK) pulse to occur after the first valid write.
O
The read-enable (RDEN1, RDEN2) inputs do not affect this operation. The following data is unloaded on the rising edge of RDCLK when RDEN1, RDEN2, OE, and OR are high.
Read clock. Data is read out of memory on a low-to-high transition at RDCLK if the OR output and the OE, RDEN1, and RDEN2 control inputs are high. RDCLK is a free-running clock and functions as the synchronizing clock for all data transfers out of the FIFO. OR is also driven synchronously with respect to RDCLK.
Read enable. RDEN1 and RDEN2 must be high before a rising edge on RDCLK to read a word out
I
of memory. The read enables are not used to read the first word stored in memory. Reset. A reset is accomplished by taking RESET low and generating a minimum of four RDCLK and
WRTCLK cycles. This ensures that the internal read and write pointers are reset and that OR, HF, and IR are low and AF/AE is high. The FIFO must be reset upon power up. With DAF level, a low pulse on RESET previously stored. With DAF default value of X = 256.
Take DAF If the reset (RESET) input is not already low, take RESET low. With DAF held low, take RESET high. This defines the AF/AE flag using X. To retain the current offset for the next reset, keep DAF low.
from high to low.
held low, a low pulse on the reset (RESET) input defines the AF/AE
input.
goes high. After the FIFO is filled and IR
input at a low
defines AF/AE using the AF/AE offset value (X), where X is the value
at a high level, a low-level pulse on RESET defines AF/AE using the
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