The RF430FRL15xH device is a 13.56-MHz transponder chip with a programmable 16-bit MSP430™ lowpower microcontroller. The device features embedded universal FRAM nonvolatile memory for storage of
program code or user data such as calibration and measurement data. The RF430FRL15xH supports
communication, parameter setting, and configuration through the ISO/IEC 15693, ISO/IEC 18000-3
compliant RFID interface and the SPI or I2C interface. Sensor measurements are supported by the
internal temperature sensor and the onboard 14-bit sigma-delta analog-to-digital converter (ADC), and
digital sensors can be connected through SPI or I2C.
The RF430FRL15xH device is optimized for operation in fully passive (battery-less) or single-cell batterypowered (semi-active) mode to achieve extended battery life in portable and wireless sensing applications.
FRAM is a nonvolatile memory that combines the speed, flexibility, and endurance of SRAM with the
stability and reliability of flash, all at lower total power consumption.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
eUSCI_B0
SPI
I C
2
8KB
ROM
CPU and
Working
Registers
4W-JTAG
Reset
Int-Logic
VDDB
TMS, TCK,
TDI, TDO
P1.0 to P1.7
RST/NMI
Debug
support
ANT
1
ANT
2
VSS
VDDH
CLKIN
VDDSW
VDD2X
CP1
CP2
VDDD
4KB
RAM
2KB
FRAM
CRC
16 bit
Timer_A
3 CC
Registers
IO Port
8 I/Os
with
interrupt
capability
14-Bit
Sigma-
Delta
ADC
ISO
15693
Decode
and
Encode
Watchdog
WDTA
32/16 Bit
ISO
15693
Analog
Front End
Power
Supply
System
MAB
LF-OSC
HF-OSC
ACLK
SMCLK
MCLK
Clock
System
C
RES
L
RES
ADC0/ADC1/ADC2
TEMP1/TEMP2
RF430FRL152H, RF430FRL153H, RF430FRL154H
SLAS834C –NOVEMBER 2012–REVISED DECEMBER 2014
www.ti.com
PART NUMBERPACKAGEBODY SIZE
RF430FRL152HVQFN (24)4 mm x 4 mm
RF430FRL153HVQFN (24)4 mm x 4 mm
RF430FRL154HVQFN (24)4 mm x 4 mm
(1) For the most current part, package, and ordering information for all available devices, see the Package
Option Addendum in Section 9, or see the TI web site at www.ti.com.
(2) The sizes shown here are approximations. For the package dimensions with tolerances, see the
Mechanical Data in Section 9.
1.4Functional Block Diagram
Figure 1-1 shows the block diagram of the RF430FRL15xH device.
The GPIO port pins are multiplexed with other functions including analog peripherals and serial
communication modules. The pin functions are selected by a combination of register values and device
modes. For schematics of the port pins and details of the multiplexing for each, refer to Section 6.7.
4.4Connections for Unused Pins
The correct termination of all unused pins is listed in Table 4-2.
Table 4-2. Connection of Unused Pins
PinPotentialComment
TDI/TMS/TCKOpenWhen used for JTAG function
RST/NMIVCCor V
Px.0 to Px.7OpenSet to port function, output direction
TDOOpenConvention: leave TDO terminal as JTAG function
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
MINMAXUNIT
Voltage applied at V
Voltage applied at V
Voltage applied to any pin (references to VSS)-0.3V
Diode current at any device pin
Current derating factor when I/O ports are switched in parallel electrically and logically
Storage temperature range, T
referenced to VSS(V
DDB
referenced to VSS(V
ANT
(2)
(4) (5) (6)
stg
)-0.31.65V
AMR
)-0.33.6V
AMR
+ 0.3V
DDB
±2mA
(3)
0.9
-40125°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are referenced to VSS.
(3) The diode current increases to ±4.5 mA when two pins are connected, it increases to ±6.75 mA when three pins are connected, and so
on.
(4) Soldering during board manufacturing must follow the current JEDEC J-STD-020 specification with peak reflow temperatures not higher
than classified on the device label on the shipping boxes or reels. If hand soldering is required for application prototyping, peak
temperature must not exceed 250°C for a total of 5 minutes for any single device.
(5) Data retention on FRAM memory cannot be ensured when exceeding the specified maximum storage temperature, T
(6) Programming of devices with user application code should only be performed after reflow or hand soldering. Factory programmed
.
stg
information, such as calibration values, are designed to withstand the temperatures reached in the current JEDEC J-STD-020
specification.
5.2ESD Ratings
VALUEUNIT
V
ESD
Electrostatic discharge (ESD)
performance
Human body model (HBM), per ANSI/ESDA/JEDEC JS001
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Low leakage pin: ADC0 has reduced ESD tolerance of ±500 V HBM.
(1)(2)
±2000V
5.3Recommended Operating Conditions
Typical data are based on V
V
DDB
V
SS
T
A
C
VDDB
C
VDDSW
C
FLY
C
VDD2X
C
VDDD
C
SVSS
f
SYSTEM
f
CLKIN
(1) Low equivalent series resistance (ESR) capacitor
(2) The MSP430 CPU is clocked directly with MCLK. Both the high and low phase of MCLK must not exceed the pulse duration of the
specified maximum frequency.
(3) Modules may have a different maximum input clock specification. See the specification of the respective module in this data sheet.
Supply voltage during program execution1.451.65V
Supply voltage (GND reference)0V
Operating free-air temperature070°C
Capacitor on V
Capacitor on V
Charge pump capacitor between CP1 and CP2.
Recommended ratio between C
Capacitor on V
Recommended ratio between C
Capacitor on V
Capacitor between SVSS and V
System frequency
External clock input frequency32kHz
Pullup on RST/NMI303540kΩ
External pullup resistor on RST
terminal (optional)
External capacitor on RST terminal10nF
(1)
for port P1V
(2)
for port P10.15V
for port P1
DDB
(1) The maximum total current IOH, for all outputs combined should not exceed 500 µA to hold the maximum voltage drop specified, limited
by low leakage switches.
(2) The maximum total current IOL, for all outputs combined should not exceed 500 µA to hold the maximum voltage drop specified.
(3) An external signal sets the interrupt flag every time the minimum interrupt pulse duration t
INT
is met.
V
DDB
– 0.15
0.7 ×
V
DDB
0.3 ×
V
DDB
47kΩ
5.8High-Frequency Oscillator (4 MHz), HFOSC
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAX UNIT
f
HFOSC
Duty cycle45%50%55%
t
START
±20%3.043.84.56MHz
1µs
5.9Low-Frequency Oscillator (256 kHz), LFOSC
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
t
WAKE-UP LPM0
t
WAKE-UP LPM34
t
WAKE-UP RESET
PARAMETERTEST CONDITIONSV
Wake-up time from LPM0 to active
(1)
mode
Wake-up time from LPM3 or LPM4 to
active mode
Wake-up time from RST to active
mode.
(1)
V
(2)
stable1.5 V210310µs
DDB
DDB
1.5 V3.26µs
1.5 V160260µs
(1) The wake-up time is measured from the edge of an external wake-up signal (for example, port interrupt or wake-up event) until the first
instruction of the user program is fetched. This time includes the activation of the FRAM during wake-up. f
(2) The wake-up time is measured from the rising edge of the RST signal until the first instruction of the user program is fetched. This time
includes the activation of the FRAM during wake-up. f
MCLK
= 2 MHz.
MINTYPMAXUNIT
= 2 MHz.
MCLK
5.11 Timer_A
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSV
UCSTEM = 0,
t
STE,LEAD
STE lead time, STE active to clock
UCMODEx = 01 or 10
UCSTEM = 1,
UCMODEx = 01 or 10
UCSTEM = 0,
t
STE,LAG
STE lag time, Last clock to STEUCxCLK
inactivecycles
UCMODEx = 01 or 10
UCSTEM = 1,
UCMODEx = 01 or 10
UCSTEM = 0,
t
STE,ACC
STE access time, STE active to SIMO
data out
UCMODEx = 01 or 10
UCSTEM = 1,
UCMODEx = 01 or 10
UCSTEM = 0,
t
STE,DIS
STE disable time, STE inactive to
SIMO high impedance
UCMODEx = 01 or 10
UCSTEM = 1,
UCMODEx = 01 or 10
t
SU,MI
t
HD,MI
t
VALID,MO
t
HD,MO
(1) f
For the slave's parameters t
(2) Specifies the time to drive the next valid data to the SIMO output after the output changing UCLK clock edge. See the timing diagrams
SOMI input data setup time1.5 V35ns
SOMI input data hold time1.5 V0ns
SIMO output data valid time
SIMO output data hold time
UCxCLK
= 1/2t
LO/HI
with t
LO/HI
= max(t
SU,SI(Slave)
(2)
(3)
VALID,MO(eUSCI)
and t
UCLK edge to SIMO valid,
CL= 20 pF
CL= 20 pF1.5 V0ns
+ t
VALID,SO(Slave)
SU,SI(Slave)
, t
SU,MI(eUSCI)
see the SPI parameters of the attached slave.
+ t
VALID,SO(Slave)
DDB
1.5 V1
1.5 V1
1.5 V1
1.5 V1
1.5 V55
1.5 V35
1.5 V40
1.5 V30
1.5 V30ns
).
in Figure 5-1 and Figure 5-2.
(3) Specifies how long data on the SIMO output is valid after the output changing UCLK clock edge. Negative values indicate that the data
on the SIMO output can become invalid before the output changing clock edge observed on UCLK. See the timing diagrams in Figure 5-
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSV
t
STE,LEAD
t
STE,LAG
t
STE,ACC
t
STE,DIS
t
SU,SI
t
HD,SI
t
VALID,SO
t
HD,SO
(1) f
For the master's parameters t
(2) Specifies the time to drive the next valid data to the SOMI output after the output changing UCLK clock edge. See the timing diagrams
STE lead time, STE active to clock1.5 V7ns
STE lag time, Last clock to STE inactive1.5 V0ns
STE access time, STE active to SOMI data out1.5 V65ns
STE disable time, STE inactive to SOMI high
impedance
SIMO input data setup time1.5 V2ns
SIMO input data hold time1.5 V5ns
SOMI output data valid time
SOMI output data hold time
UCxCLK
= 1/2t
LO/HI
with t
LO/HI
(2)
(3)
≥ max(t
VALID,MO(Master)
SU,MI(Master)
and t
VALID,MO(Master)
UCLK edge to SOMI valid,
CL= 20 pF
CL= 20 pF1.5 V4ns
+ t
SU,SI(eUSCI)
, t
SU,MI(Master)
see the SPI parameters of the attached slave.
+ t
VALID,SO(eUSCI)
in Figure 5-3 and Figure 5-4.
(3) Specifies how long data on the SOMI output is valid after the output changing UCLK clock edge. See the timing diagrams in Figure 5-3