TEXAS INSTRUMENTS OPA691 Technical data

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OPERATIONAL AMPLIFIER With Disable

O

P

A

6

9

1

O

P

A

6

9

1

SBOS226A – DECEMBER 2001– REVISED SEPTEMBER 2002

Wideband, Current Feedback

OPA691

FEATURES

●

FLEXIBLE SUPPLY RANGE:

+5V to +12V Single-Supply

±

2.5V to ±6V Dual-Supply

●

UNITY-GAIN STABLE: 280MHz (G = 1)

● HIGH OUTPUT CURRENT: 190mA

● OUTPUT VOLTAGE SWING: ±4.0V

● HIGH SLEW RATE: 2100V/µs

● LOW dG/dφ: 0.07%/0.02°

● LOW SUPPLY CURRENT: 5.1mA

● LOW DISABLED CURRENT: 150µA

●

WIDEBAND +5V OPERATION: 190MHz (G = +2)

DESCRIPTION

The OPA691 sets a new level of performance for broadband
current feedback op amps. Operating on a very low 5.1mA
supply current, the OPA691 offers a slew rate and output
power normally associated with a much higher supply cur­rent. A new output stage architecture delivers a high output
current with minimal voltage headroom and crossover distor­tion. This gives exceptional single-supply operation. Using a
single +5V supply, the OPA691 can deliver a 1V to 4V output
swing with over 150mA drive current and 190MHz band­width. This combination of features makes the OPA691 an
ideal RGB line driver or single-supply Analog-to-Digital Con­verter (ADC) input driver.

The OPA691’s low 5.1mA supply current is precisely trimmed
at 25°C. This trim, along with low drift over-temperature,

APPLICATIONS

● xDSL LINE DRIVER

● BROADBAND VIDEO BUFFERS

● HIGH-SPEED IMAGING CHANNELS

● PORTABLE INSTRUMENTS

● ADC BUFFERS

● ACTIVE FILTERS

● WIDEBAND INVERTING SUMMING

● HIGH SFDR IF AMPLIFIER

ensures lower maximum supply current than competing
products. System power may be further reduced by using the
optional disable control pin. Leaving this disable pin open, or
holding it HIGH, gives normal operation. If pulled LOW, the
OPA691 supply current drops to less than 150µA while the
output goes into a high impedance state. This feature may be
used for power savings.

OPA691 RELATED PRODUCTS

SINGLES DUALS TRIPLES

Voltage Feedback OPA690 OPA2690 OPA3690
Current Feedback OPA681 OPA2691 OPA3691
Fixed Gain OPA692 OPA3692

+5V

DIS

50Ω

V

1

50Ω

V

2

50Ω

V

3

50Ω

V

4

50Ω

V

5

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

50Ω

OPA691

30Ω

100Ω

–5V

RG-58

100MHz, –1dB Compression = 15dBm

200MHz RF Summing Amplifier

Copyright © 2001, Texas Instruments Incorporated

www.ti.com

VO = –(V1 + V2 + V3 + V4 + V5)

50Ω

ABSOLUTE MAXIMUM RATINGS

Power Supply .............................................................................. ±6.5VDC

Internal Power Dissipation

Differential Input Voltage .................................................................. ±1.2V

Input Voltage Range ............................................................................ ±V

Storage Temperature Range: ID, IDBV ......................... –40°C to +125°C

Lead Temperature (soldering, 10s) .............................................. +300°C

Junction Temperature (T
ESD Performance:

HBM .............................................................................................. 2000V

CDM.............................................................................................. 1500V

NOTES:: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. (2) Packages must be derated based on specified
Maximum T

must be observed.

J

(2)

............................ See Thermal Information

) ........................................................... +175°C

J

(1)

ELECTROSTATIC
DISCHARGE SENSITIVITY

S

θ

JA

This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.

ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published

.

specifications.

PACKAGE/ORDERING INFORMATION

PRODUCT PACKAGE-LEAD DESIGNATOR

PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT

OPA691ID SO-8 D –40°C to +85°C OPA691 OPA691ID Rails, 100

(1)

"" " ""OPA691IDR Tape and Reel, 2500

OPA691IDBV SOT23-6 DBV –40°C to +85°C OAFI OPA691IDBVT Tape and Reel, 250

"" " ""OPA691IDBVR Tape and Reel, 3000

NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.

SPECIFIED

RANGE MARKING NUMBER MEDIA, QUANTITY

PIN CONFIGURATION

Top View SO

NC

Inverting Input

Noninverting Input

–V

1

2

3

4

S

NC = No Connection

8

7

6

5

DIS

+V

S

Output

NC

Top View SOT

Output

–V

Noninverting Input

1

2

S

3

654

6

+V

S

5

DIS

4

Inverting Input

OAFI

123

Pin Orientation/Package Marking

2

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OPA691

SBOS226A

ELECTRICAL CHARACTERISTICS: VS = ±5V

Boldface limits are tested at +25°C.

RF = 402Ω, RL = 100Ω, and G = +2, (see Figure 1 for AC performance only), unless otherwise noted.

OPA691ID, IDBV

TYP MIN/MAX OVER-TEMPERATURE

0°C to –40°C to

PARAMETER CONDITIONS +25°C +25°C

(1)

70°C

(2)

+85°C

(2)

UNITS MAX

AC PERFORMANCE (see Figure 1)

Small-Signal Bandwidth (V

Bandwidth for 0.1dB Gain Flatness G = +2, V
Peaking at a Gain of +1 R
Large-Signal Bandwidth G = +2, VO = 5Vp-p 200 MHz typ C

= 0.5Vp-p) G = +1, RF = 453Ω 280 MHz typ C

O

G = +2, RF = 402Ω 225 200 190 180 MHz min B
G = +5, R

G = +10, R

= 453, VO = 0.5Vp-p 0.2 1 1.5 2 dB max B

F

= 261Ω 210 MHz typ C

F

= 180Ω 200 MHz typ C

F

= 0.5Vp-p 90 40 35 20 MHz min B

O

Slew Rate G = +2, 4V Step 2100 1400 1375 1350 V/µsminB
Rise-and-Fall Time G = +2, VO = 0.5V Step 1.6 ns typ C

G = +2, 5V Step 1.9 ns typ C

Settling Time to 0.02% G = +2, VO = 2V Step 12 ns typ C

0.1% G = +2, VO = 2V Step 8 ns typ C

Harmonic Distortion G = +2, f = 5MHz, V

2nd-Harmonic R
3rd-Harmonic RL = 100Ω –74 –72 –70 –68 dBc max B

L

R

L

= 2Vp-p

O

= 100Ω –70 –63 –60 –58 dBc max B
≥ 500Ω –79 –70 –67 –65 dBc max B

RL ≥ 500Ω –93 –87 –82 –78 dBc max B
Input Voltage Noise f > 1MHz 1.7 2.5 2.9 3.1 nV/√HZ max B
Noninverting Input Current Noise f > 1MHz 12 14 15 15 pA/√HZ max B
Inverting Input Current Noise f > 1MHz 15 17 18 19 pA/√HZ max B
Differential Gain G = +2, NTSC, VO = 1.4Vp, RL = 150Ω 0.07 % typ C

RL = 37.5Ω 0.17 % typ C

Differential Phase G = +2, NTSC, VO = 1.4Vp, RL = 150Ω 0.02 deg typ C

RL = 37.5Ω 0.07 deg typ C

DC PERFORMANCE

Open-Loop Transimpedance Gain (ZOL)

(4)

VO = 0V, RL = 100Ω 225 125 110 100 kΩ min A
Input Offset Voltage VCM = 0V ±0.5 ±2.5 ±3.2 ±3.9 mV max A
Average Offset Voltage Drift VCM = 0V ±12 ±20 µV/°CmaxB
Noninverting Input Bias Current VCM = 0V +15 +35 +43 +45 µAmaxA
Average Noninverting Input Bias Current Drift VCM = 0V –300 –300 nA/°CmaxB
Inverting Input Bias Current VCM = 0V ±5 ±25 ±30 ±40 µAmaxA
Average Inverting Input Bias Current Drift V

INPUT

Common-Mode Input Range

(5)

= 0V ±90 ±200 nA°/C max B

CM

±3.5 ±3.4 ±3.3 ±3.2 V min A

Common-Mode Rejection VCM = 0V 56 52 51 50 dB min A
Noninverting Input Impedance 100 || 2 kΩ || pF typ C
Inverting Input Resistance (RI)

Open-Loop 35 Ω typ C

OUTPUT

Voltage Output Swing No Load ±4.0

±3.8 ±3.7 ±3.6 V min A

100Ω Load ±3.9 ±3.7 ±3.6 ±3.3 V min A

Current Output, Sourcing VO = 0 +190 +160 +140 +100 mA min A
Current Output, Sinking VO = 0 –190 –160 –140 –100 mA min A
Short-Circuit Current VO = 0 ±250 mA typ C
Closed-Loop Output Impedance G = +2, f = 100kHz 0.03 Ω typ C

DISABLE (Disabled LOW)

Power-Down Supply Current (+V
Disable Time VIN = 1V 400 ns typ C

)V

S

= 0 –150 –300 –350 –400 µAmaxA

DIS

Enable Time VIN = 1V 25 ns typ C
Off Isolation G = +2, 5MHz 70 dB typ C
Output Capacitance in Disable 4 pF typ C
Turn On Glitch G = +2, RL = 150Ω, VIN = 0 ±50 mV typ C
Turn Off Glitch G = +2, RL = 150Ω, VIN = 0 ±20 mV typ C
Enable Voltage 3.3 3.5 3.6 3.7 V min A
Disable Voltage 1.8 1.7 1.6 1.5 V max A
Control Pin Input Bias Current (DIS) V

= 0 75 130 150 160 µAmaxA

DIS

POWER SUPPLY

Specified Operating Voltage ±5 V typ C
Maximum Operating Voltage Range

±6 ±6 ±6VmaxA

Max Quiescent Current VS = ±5V 5.1 5.3 5.5 5.7 mA max A
Min Quiescent Current VS = ±5V 5.1 4.9 4.7 4.5 mA min A
Power-Supply Rejection Ratio (–PSRR) Input Referred 58 52 50 49 dB min A

TEMPERATURE RANGE

Specification: D, DBV
Thermal Resistance,

DSO-8 125 °C/W typ C

θ

JA

Junction-to-Ambient

–40 to +85

DBV SOT23-6 150 °C/W typ C

NOTES: (1) Junction temperature = ambient for 25°C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +10°C
at high temperature limit for over-temperature specifications. (3) Test levels: (A) 100% tested at 25°C. Over-temperature limits by characterization and simulation.
(B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-of-node. V
voltage. (5) Tested < 3dB below minimum specified CMRR at ± CMIR limits.

is the input common-mode

CM

MIN/

TEST

LEVEL

°C typ C

(3)

OPA691

SBOS226A

www.ti.com

3

ELECTRICAL CHARACTERISTICS: VS = +5V

Bolace limits are tested at +25°C.

RF = 453Ω, RL = 100Ω to VS/2, and G = +2, (see Figure 2 for AC performance only), unless otherwise noted.

OPA691ID, IDBV

TYP MIN/MAX OVER-TEMPERATURE

PARAMETER CONDITIONS +25°C +25°C

(1)

70°C

(2)

+85°C

(2)

UNITS MAX

0°C to –40°C to

AC PERFORMANCE (see Figure 2)

Small-Signal Bandwidth (V

Bandwidth for 0.1dB Gain Flatness G = +2, V
Peaking at a Gain of +1 R
Large-Signal Bandwidth G = +2, V
Slew Rate G = +2, 2V Step 850 600 575 550 V/µsminB

= 0.5Vp-p) G = +1, RF = 499Ω 210 MHz typ C

O

G = +2, R
G = +5, RF = 340Ω 180 MHz typ C

G = +10, R
= 649Ω, VO < 0.5Vp-p 0.2 1 2.5 3.0 dB max B

F

= 453Ω 190 168 160 140 MHz min B

F

= 180Ω 155 MHz typ C

F

< 0.5Vp-p 90 40 30 25 MHz min B

O

= 2Vp-p 210 MHz typ C

O

Rise-and-Fall Time G = +2, VO = 0.5V Step 2.0 ns typ C
Settling Time to 0.02% G = +2, V

G = +2, V

0.1% G = +2, V

Harmonic Distortion G = +2, f = 5MHz, V

2nd-Harmonic R

R

3rd-Harmonic RL = 100Ω to VS/2 –71 –68 –67 –65 dBc max B

= 2V Step 2.3 ns typ C

O

= 2V Step 14 ns typ C

O

= 2V Step 10 ns typ C

O

= 2Vp-p

= 100Ω to VS/2 –66 –58 –57 –56 dBc max B

L

≥ 500Ω to VS/2 –73 –65 –63 –62 dBc max B

L

O

RL ≥ 500Ω to VS/2 –77 –72 –70 –69 dBc max B
Input Voltage Noise f > 1MHz 1.7 2.5 2.9 3.1 nV/√Hz typ B
Noninverting Input Current Noise f > 1MHz 12 14 15 15 pA/√Hz typ B
Inverting Input Current Noise f > 1MHz 15 17 18 19 pA/√Hz typ B

DC PERFORMANCE

Open-Loop Transimpedance Gain (ZOL)
Input Offset Voltage V
Average Offset Voltage Drift V
Noninverting Input Bias Current V
Average Noninverting Input Bias Current Drift V
Inverting Input Bias Current V
Average Inverting Input Bias Current Drift V

INPUT

Least Positive Input Voltage
Most Positive Input Voltage
Common-Mode Rejection Ratio (CMRR)

(4)

VO = VS/2, RL = 100Ω to VS/2 200 100 90 80 kΩ min A

= 2.5V ±0.5 ±3 ±3.6 ±4.3 mV max A

CM

= 2.5V ±12 ±20 µV/°CmaxB

CM

= 2.5V +20 +40 +46 +56 µAmaxA

CM

= 2.5V –250 –250 nA/°CmaxB

CM

= 2.5V ±5 ±20 ±25 ±35 µAmaxA

CM

= 2.5V ±112 ±250 nA/°Cmax B

CM

(5)

(5)

1.5 1.6 1.7 1.8 V max A

3.5 3.4 3.3 3.2 V min A

VCM = VS/2 54 50 49 48 dB min A
Noninverting Input Impedance 100 || 2 kΩ || pF typ C
Inverting Input Resistance (RI)

Open-Loop 38 Ω typ C

OUTPUT

Most Positive Output Voltage No Load 4 3.8 3.7 3.5 V min A

R

= 100Ω to VS/2 3.9 3.7 3.6 3.4 V min A

Least Positive Output Voltage No Load 1 1.2 1.3 1.5 V max A
Current Output, Sourcing V

Current Output, Sinking V
Short-Circuit Current V
Closed-Loop Output Impedance G = +2, f = 100kHz 0.03 Ω typ C

L

= 100Ω to VS/2 1.1 1.3 1.4 1.6 V max A

R

L

= VS/2 +160 +120 +100 +80 mA min A

O

= VS/2 –160 –120 –100 –80 mA min A

O

= VS/2 250 mA typ C

O

DISABLE (Disabled LOW)

Power-Down Supply Current (+V
Off Isolation G = +2, 5MHz 65 dB typ C

)V

S

= 0 –150 –300 –350 –400 µAmaxA

DIS

Output Capacitance in Disable 4 pF typ C
Turn On Glitch G = +2, R
Turn Off Glitch G = +2, R
Enable Voltage 3.3 3.5 3.6 3.7 V min A

= 150Ω, VIN = VS /2 ±50 mV typ C

L

= 150Ω, VIN = VS /2 ±20 mV typ C

L

Disable Voltage 1.8 1.7 1.6 1.5 V max A
Control Pin Input Bias Current (DIS) V

= 0 75 130 150 160 µA typ C

DIS

POWER SUPPLY

Specified Single-Supply Operating Voltage 5 V typ C
Max Single-Supply Operating Voltage 12 12 12 V max A
Max Quiescent Current V
Min Quiescent Current V
Power-Supply Rejection Ratio (–PSRR) Input Referred 55 dB typ C

= +5V 4.5 4.8 5.0 5.2 mA max A

S

= +5V 4.5 4.1 4.0 3.8 mA min A

S

TEMPERATURE RANGE

Specification: D, DBV
Thermal Resistance,

DSO-8 125 °C/W typ C

θ

JA

Junction-to-Ambient

–40 to +85

DBV SOT23-6 150 °C/W typ C

NOTES: (3) Test levels: (A) 100% tested at 25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and simulation.
(C) Typical value only for information. (1) Junction temperature = ambient for 25°C specifications. (2) Junction temperature = ambient at low temperature limit: junction
temperature = ambient +10°C at high temperature limit for over-temperature specifications. (3) Test levels: (A) 100% tested at 25°C. Over-temperature limits by
characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-of-node.

is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.

V

CM

MIN/

TEST

LEVEL

°C typ C

(3)

4

www.ti.com

OPA691

SBOS226A

TYPICAL CHARACTERISTICS: VS = ±5V

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

Frequency (25MHz/div)

0 250MHz125MHz

LARGE-SIGNAL FREQUENCY RESPONSE

Gain (0.5dB/div)

G = +2, RL = 100Ω

4Vp-p

7Vp-p

1Vp-p

2Vp-p

G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted (see Figure 1).

1

SMALL-SIGNAL FREQUENCY RESPONSE

0

–1
–2
–3
–4
–5
–6

Normalized Gain (1dB/div)

–7

VO = 0.5Vp-p

–8

0 250MHz125MHz

SMALL-SIGNAL PULSE RESPONSE

+400
+300
+200
+100

0

–100
–200

Output Voltage (100mV/div)

–300
–400

G = +1, RF = 453Ω

G = +5, RF = 261Ω

G = +10, RF = 180Ω

Frequency (25MHz/div)

Time (5ns/div)

G = +2,

R

F

G = +2

V

= 0.5Vp-p

O

= 402Ω

+4

LARGE-SIGNAL PULSE RESPONSE

+3
+2
+1

0

–1
–2

Output Voltage (1V/div)

–3
–4

Time (5ns/div)

G = +2

V

= 5Vp-p

O

dG/dP (%/°)

OPA691

SBOS226A

0.2

0.18

0.16

0.14

+5

Video

In

402Ω

OPA691

–5

402Ω

Optional 1.3kΩ

Pull-Down

Video
Loads

0.12

0.1

0.08

0.06

0.04

0.02

COMPOSITE VIDEO dG/dP

0

12

Number of 150Ω Loads

No Pull-Down
With 1.3kΩ Pull-Down

dG

dG

dP

dP

34

www.ti.com

–45

V

= 0

–50

DIS

–55
–60
–65
–70
–75

DISABLED FEEDTHROUGH vs FREQUENCY

–80

Reverse

–85

Feedthrough (5dB/div)

–90
–95

–100

Forward

10.3 10 100
Frequency (MHz)

5

TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)

G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted (see Figure 1).

–60
–65
–70
–75
–80
–85
–90

Harmonic Distortion (dBc)

–95

–100

–50

–60

–70

–80

HARMONIC DISTORTION vs LOAD RESISTANCE

VO = 2Vp-p

f = 5MHz

2nd-Harmonic

3rd-Harmonic

100 1000

Load Resistance (Ω)

HARMONIC DISTORTION vs FREQUENCY

dBc = dB Below Carrier

VO = 2Vp-p
R

= 100Ω

L

2nd-Harmonic

3rd-Harmonic

–60

–65

–70

–75

Harmonic Distortion (dBc)

–80

–85

–65

–70

–75

HARMONIC DISTORTION vs SUPPLY VOLTAGE

2nd-Harmonic

3rd-Harmonic

2.5 3 3.5 4 4.5 65.55
Supply Voltage (V)

HARMONIC DISTORTION vs OUTPUT VOLTAGE

RL = 100Ω
f = 5MHz

VO = 2Vp-p

R

f = 5MHz

2nd-Harmonic

3rd-Harmonic

= 100Ω

L

–90

Harmonic Distortion (dBc)

–100

0.1 1 10 20
Frequency (MHz)

HARMONIC DISTORTION vs NONINVERTING GAIN

–50

VO = 2Vp-p

R

= 100Ω

L

f = 5MHz

–60

–70

–80

Harmonic Distortion (dBc)

–90

110

2nd-Harmonic

3rd-Harmonic

Gain (V/V)

–80

Harmonic Distortion (dBc)

–85

0.1 1 5
Output Voltage Swing (Vp-p)

–50

–60

–70

–80

Harmonic Distortion (dBc)

–90

HARMONIC DISTORTION vs INVERTING GAIN

VO = 2Vp-p

R

= 100Ω

L

f = 5MHz

R

= 402Ω

F

110

2nd-Harmonic

3rd-Harmonic

Inverting Gain (V/V)

6

www.ti.com

OPA691

SBOS226A

TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)

9

6

3

0

–3

–6

–9

Frequency (25MHz/div)

0 250MHz125MHz

FREQUENCY RESPONSE vs CAPACITIVE LOAD

Normalized Gain to Capacitive Load (dB)

OPA691

R

S

V

IN

V

O

C

L

1kΩ

402Ω

402Ω

1kΩ is optional.

CL = 22pF

CL = 10pF

CL = 47pF

CL = 100pF

G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted (see Figure 1).

INPUT VOLTAGE AND CURRENT NOISE DENSITY

100

Inverting Input Current Noise (15pA/√Hz)

10

Noninverting Input Current Noise (12pA/√Hz)

Current Noise (pA/√Hz)

Voltage Noise (nV/√Hz)

Voltage Noise (1.7nV/√Hz)

1

100 1k 10k 100k 1M 10M

Frequency (Hz)

70

RECOMMENDED R

vs CAPACITIVE LOAD

S

60

50

40

(Ω)

S

R

30

2-TONE, 3RD-ORDER

INTERMODULATION SPURIOUS

–30

dBc = dB below carriers

50MHz

–40

–50

–60

10MHz

–70

–80

3rd-Order Spurious Level (dBc)

–90

Load Power at Matched 50Ω Load

–8 –6 –4 –20246810

Single-Tone Load Power (dBm)

20MHz

20

10

0

1101001k

65
60
55
50
45
40
35
30
25

Power-Supply Rejection Ratio (dB)

Common-Mode Rejection Ratio (dB)

20

1k 10k 100k 1M 10M 100M

OPA691

SBOS226A

Capacitive Load (pF)

CMRR AND PSRR vs FREQUENCY

–PSRR

Frequency (Hz)

+PSRR

CMRR

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120

OPEN-LOOP TRANSIMPEDANCE GAIN/PHASE

100

80

∠ Z

|ZOL|

OL

60

40

20

Transimpedance Gain (20dBΩ/div)

0

10k 100k 1M 10M 100M 1G

Frequency (Hz)

0

–40

–80

–120

–160

–200

–240

7

Transimpedance Phase (40°/div)

TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)

30
20
10

0

–10
–20
–30

DISABLE/ENABLE GLITCH

Time (20ns/div)

Output Voltage (10mV/div)

6.0

4.0

2.0
0

V

DIS

(2V/div)

V

DIS

Output Voltage

(0V Input)

VIN = 0V

G = +2, RF = 402Ω, and RL = 100Ω, unless otherwise noted (see Figure 1).

SUPPLY AND OUTPUT CURRENT vs TEMPERATURE

10

Sourcing Output Current

8

Sinking Output Current

6

4

Supply Current (2mA/div)

2

0

–50 –25 0 25 50 75 100 125

Quiescent Supply Current

Ambient Temperature (°C)

TYPICAL DC DRIFT OVER TEMPERATURE

2

1.5
1

Noninverting Input Bias Current (IB+)

0.5
0

–0.5

–1

Input Offset Voltage (mV)

–1.5

Inverting Input

Bias Current (I

)

B–

Input Offset

Voltage (V

–2

–50 –25 0 25 50 75 100 125

Ambient Temperature (°C)

OUTPUT VOLTAGE AND CURRENT LIMITATIONS

250

200

5
4
3

1W Internal

Power Limit

Output Current Limit

2

150

100

Output Current (50mA/div)

50

0

1

(V)

0

O

V

–1
–2
–3
–4

Output Current Limit

–5

25Ω

Load Line

50Ω Load Line

100Ω Load Line

1W Internal
Power Limit

–150–200–250–300 –50–100 0 +100+50 +200+150 +250 +300

I

(mA)

O

CLOSED-LOOP OUTPUT IMPEDANCE

Z

402Ω

vs FREQUENCY

O

40
30
20
10
0

–10
–20

Input Bias Currents (µA)

–30

)

OS

–40

10

50Ω

+5

OPA691

1

–5

402Ω

0.1

Output Impedance (Ω)

0.01
10k 100M100k 1M 10M

Frequency (Hz)

2.0

1.6

1.2

0.8

0.4

Output Voltage (400mV/div)

0

8

LARGE-SIGNAL DISABLE/ENABLE RESPONSE

V

DIS

Output Voltage

VIN = +1V

Time (200ns/div)

6.0

4.0
(2V/div)

2.0

DIS

V

0

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OPA691

SBOS226A