LM136-5.0, LM236-5.0, LM336-5.0
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LM136-5.0, LM236-5.0, LM336-5.0 5.0V Reference Diode
Check for Samples: LM136-5.0, LM236-5.0, LM336-5.0
1
FEATURES
2
• Adjustable 4V to 6V
• Low Temperature Coefficient
• Wide Operating Current of 600 μA to 10 mA
• 0.6Ω Dynamic Impedance
• ± 1% Initial Tolerance Available
• Specified Temperature Stability
• Easily Trimmed for Minimum Temperature Drift
• Fast Turn-on
• Three Lead Transistor Package
SNVS750D –JUNE 1999–REVISED MARCH 2013
DESCRIPTION
The LM136-5.0/LM236-5.0/LM336-5.0 integrated
circuits are precision 5.0V shunt regulator diodes.
These monolithic IC voltage references operate as a
low temperature coefficient 5.0V zener with 0.6Ω
dynamic impedance. A third terminal on the LM136-
5.0 allows the reference voltage and temperature
coefficient to be trimmed easily.
The LM136-5.0 series is useful as a precision 5.0V
low voltage reference for digital voltmeters, power
supplies or op amp circuitry. The 5.0V makes it
convenient to obtain a stable reference from low
voltage supplies. Further, since the LM136-5.0
operates as a shunt regulator, it can be used as
either a positive or negative voltage reference.
The LM136-5.0 is rated for operation over −55°C to
+125°C while the LM236-5.0 is rated over a −25°C to
+85°C temperature range. The LM336-5.0 is rated for
operation over a 0°C to +70°C temperature range.
See the Connection Diagrams for available packages.
For applications requiring 2.5V see LM136-2.5.
Connection Diagrams
Figure 1. TO-92 Plastic Package Figure 2. TO Metal Can Package
(Bottom View) (Bottom View)
Figure 3. SOIC Package
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2013, Texas Instruments Incorporated
LM136-5.0, LM236-5.0, LM336-5.0
SNVS750D –JUNE 1999–REVISED MARCH 2013
Typical Applications
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Figure 4. 5.0V Reference
† Adjust to 5.00V
* Any silicon signal diode
Figure 5. 5.0V Reference with Minimum
* Does not affect temperature coefficient
Figure 6. Trimmed 4V to 6V Reference
Independent of Breakdown Voltage
Temperature Coefficient
with Temperature Coefficient
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
Reverse Current 15 mA
Forward Current 10 mA
Storage Temperature −60 to +150 °C
Operating Temperature Range
LM136-5.0 −55 to +150 °C
LM236-5.0 −25 to +85 °C
LM336-5.0 0 to +70 °C
Soldering Information
TO-92 Package (10 sec.) 260 °C
TO Package (10 sec.) 300 °C
SOIC Package
Vapor Phase (60 sec.) 215 °C
Infrared (15 sec.) 220 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified operating conditions.
(2) For elevated temperature operation, Tjmax see THERMAL CHARACTERISTICS
(2)
(1)
SNVS750D –JUNE 1999–REVISED MARCH 2013
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
LM136 150°C
LM236 125°C
LM336 100°C
Thermal Resistance TO-92 TO SOIC-8
θ
(Junction to Ambient) 180°C/W (0.4″ Leads) 440°C/W 165°C/W
ja
170°C/W (0.125″ Leads)
θ
(Junction to Case) N/A 80°C/W N/A
ja
ELECTRICAL CHARACTERISTICS
LM136A-5.0/LM236A-5.0 LM336B-5.0
Parameter Conditions LM136-5.0/LM236-5.0 LM336-5.0 Units
Min Typ Max Min Typ Max
Reverse Breakdown TA=25°C, IR=1 mA
Voltage
LM136-5.0/LM236-5.0/LM336-5.0 4.9 5.00 5.1 4.8 5.00 5.2 V
LM136A-5.0/LM236A-5.0, LM336B-5.0 4.95 5.00 5.05 4.90 5.00 5.1 V
Reverse Breakdown TA=25°C, 6 12 6 20 mV
Change
With Current 600 μA≤IR≤10 mA
Reverse Dynamic TA=25°C, IR=1 mA, f = 100 Hz 0.6 1.2 0.6 2 Ω
Impedance
Temperature Stability VRAdjusted 5.00V
(2)
IR=1 mA, (Figure 15)
0°C≤TA≤70°C (LM336-5.0) 4 12 mV
(1) Unless otherwise specified, the LM136-5.0 is specified from −55°C≤TA≤+125°C, the LM236-5.0 from −25°C≤TA≤+85°C and the LM336-
5.0 from 0°C≤TA≤+70°C.
(2) Temperature stability for the LM336 and LM236 family is specified by design. Design limits are specified (but not 100% percent
production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality
levels. Stability is defined as the maximum charge in V
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from 25°C to TA(min) or TA(max).
REF
LM136-5.0, LM236-5.0, LM336-5.0
SNVS750D –JUNE 1999–REVISED MARCH 2013
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ELECTRICAL CHARACTERISTICS (continued)
(1)
LM136A-5.0/LM236A-5.0 LM336B-5.0
Parameter Conditions LM136-5.0/LM236-5.0 LM336-5.0 Units
Min Typ Max Min Typ Max
−25°C≤TA≤+85°C (LM236-5.0) 7 18 mV
−55°C≤TA≤+125°C (LM136-5.0) 20 36 mV
Reverse Breakdown
Change
With Current
Adjustment Range Circuit of Figure 14 ±1 ±1 V
Reverse Dynamic IR= 1 mA 0.8 1.6 0.8 2.5 Ω
Impedance
Long Term Stability TA=25°C±0.1°C, IR=1 mA, t = 1000 hrs 20 20 ppm
600 μA≤IR≤10 mA 6 17 6 24 mV
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SNVS750D –JUNE 1999–REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Voltage Change Zener Noise Voltage
Figure 7. Figure 8.
Dynamic Impedance Response Time
Figure 9. Figure 10.
Reverse Characteristics Temperature Drift
Figure 11. Figure 12.
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SNVS750D –JUNE 1999–REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
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Forward Characteristics
Figure 13.
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SNVS750D –JUNE 1999–REVISED MARCH 2013
APPLICATION HINTS
The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low
impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown
voltage or the temperature coefficient can be adjusted to optimize circuit performance.
Figure 14 shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the
addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device.
The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer
circuitry.
If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment
potentiometer as shown in Figure 15. When the device is adjusted to 5.00V the temperature coefficient is
minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457.
For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0.
It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The absolute
resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment
range, fixed resistors should be connected in series with the pot to make pot setting less critical.
Figure 14. LM136-5.0 with Pot for Adjustment of Figure 15. Temperature Coefficient Adjustment
Breakdown Voltage (Trim Range = ±1.0V Typical) (Trim Range = ±0.5V Typical)
Typical Applications
* Adjust for 6.25V across R1
Figure 16. Precision Power Regulator with Low Temperature Coefficient
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LM136-5.0, LM236-5.0, LM336-5.0
SNVS750D –JUNE 1999–REVISED MARCH 2013
Figure 17. 5V Crowbar Figure 18. Adjustable Shunt Regulator
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Figure 19. Linear Ohmmeter Figure 20. Op Amp with Output Clamped
Figure 21. Bipolar Output Reference Figure 22. 5.0V Square Wave Calibrator
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SNVS750D –JUNE 1999–REVISED MARCH 2013
Figure 23. 10V Buffered Reference Figure 24. Low Noise Buffered Reference
Figure 25. Wide Input Range Reference
Schematic Diagram
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LM136-5.0, LM236-5.0, LM336-5.0
SNVS750D –JUNE 1999–REVISED MARCH 2013
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REVISION HISTORY
Changes from Revision C (March 2013) to Revision D Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 9
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PACKAGE OPTION ADDENDUM
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11-Apr-2013
PACKAGING INFORMATION
Orderable Device Status
LM136AH-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -40 to 125 LM136AH5.0
LM136AH-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
LM136H-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 LM136H5.0
LM136H-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
LM236AH-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 LM236AH5.0
LM236AH-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
LM236H-5.0 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -25 to 85 LM236H5.0
LM236H-5.0/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish MSL Peak Temp
(3)
POST-PLATE Level-1-NA-UNLIM -40 to 125 LM136AH5.0
POST-PLATE Level-1-NA-UNLIM -55 to 125 LM136H5.0
POST-PLATE Level-1-NA-UNLIM -55 to 125 LM236AH5.0
POST-PLATE Level-1-NA-UNLIM -25 to 85 LM236H5.0
Op Temp (°C) Top-Side Markings
(4)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
NDV0003H
MECHANICAL DATA
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