DS16EV5110 Video Equalizer (3D+C) for DVI, HDMI Sink-Side Applications
Check for Samples: DS16EV5110
1
FEATURES
2
•8 Levels of Equalization Settable by 3 Pins or
Through the SMBus Interface
•DC-Coupled Inputs and Outputs
•Optimized for Operation From 250 Mbps to
2.25 Gbps in Support of UXGA, 480 I/P, 720 I/P,DESCRIPTION
1080 I, and 1080 P With 8, 10, and 12-Bit Color
Depth Resolutions
•Two DS16EV5110 Devices Support DVI/HDMI
Dual Link
•DVI 1.0, and HDMI 1.3a Compatible TMDS
Interface
•Clock Channel Signal Detect (LOS)
•Enable for Power Savings Standby Mode
•System Management Bus (SMBus) Provides
Control of Boost, Output Amplitude, Enable,
and Clock Channel Signal Detect Threshold
•Low Power Consumption: 475mW (Typical)
•0.13 UI Total Jitter at 1.65 Gbps Including
Cable
•Single 3.3V Power Supply
•Small 7mm x 7mm, 48-Pin Leadless WQFN
Package
•-40°C to +85°C Operating Temperature Range
•Extends TMDS Cable Reach Over:
1. > 40 Meters 24 AWG DVI Cable (1.65Gbps)
2. > 20 Meters 28 AWG DVI Cable (1.65Gbps)
3. >20MetersCat5/Cat5e/Cat6Cables
(1.65Gbps)
4. >20 Meters28AWGHDMI Cables
(2.25Gbps)
APPLICATIONS
•Sink-Side Video Applications
•Projectors
•High Definition Displays
The DS16EV5110 is a multi-channel equalizer
optimizedforvideocableextensionsink-side
applications. It operates between 250Mbps and
2.25Gbps with common applications at 1.65Gbps and
2.25Gbps (per data channel). It contains three
Transition-Minimized Differential Signaling (TMDS)
data channels and one clock channel as commonly
found inDVIand HDMIcables. Itprovides
compensation for skin-effect and dielectric losses, a
common phenomenon when transmitting video on
commercially available high definition video cables.
The inputs conform to DVI and HDMI requirements
andfeaturesprogrammablelevelsofinput
equalization.Theprogrammablelevelsof
equalization provide optimal signal boost and reduces
inter-symbol interference. Eight levels of boost are
selectable via a pin interface or by the optional
System Management Bus.
The clock channel is optimized for clock rates of up to
225 MHz and features a signal detect circuit. To
maximize noise immunity, the DS16EV5110 features
a signal detector with programmable thresholds. The
thresholdisadjustablethroughaSystem
Management Bus (SMBus) interface.
The DS16EV5110 also provides support for system
power management via output enable controls.
Additional controls are provided via the SMBus
enabling customization and optimization for specific
applications requirements. These controls include
programmable features such as output amplitude and
boost controls as well as system level diagnostics.
SNLS249M –FEBRUARY 2007–REVISED APRIL 2013
Typical Application
1
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
C_IN−1I, CMLInverting and non-inverting TMDS Clock inputs to the equalizer. An on-chip 50Ω terminating
C_IN+2resistor connects C_IN+ to VDD and C_IN- to VDD.
D_IN0−4I, CMLInverting and non-inverting TMDS Data inputs to the equalizer. An on-chip 50Ω terminating
D_IN0+5resistor connects D_IN0+ to VDD and D_IN0- to VDD.
D_IN1−8I, CMLInverting and non-inverting TMDS Data inputs to the equalizer. An on-chip 50Ω terminating
D_IN1+9resistor connects D_IN1+ to VDD and D_IN1- to VDD.
D_IN2−11I, CMLInverting and non-inverting TMDS Data inputs to the equalizer. An on-chip 50Ω terminating
D_IN2+12resistor connects D_IN2+ to VDD and D_IN2- to VDD.
C_OUT-36O, CMLInverting and non-inverting TMDS outputs from the equalizer. Open collector.
C_OUT+35
D_OUT0−33O, CMLInverting and non-inverting TMDS outputs from the equalizer. Open collector.
D_OUT0+32
D_OUT1–29O, CMLInverting and non-inverting TMDS outputs from the equalizer. Open collector.
D_OUT1+28
D_OUT2−26O, CMLInverting and non-inverting TMDS outputs from the equalizer. Open collector.
D_OUT2+25
Equalization Control
BST_023I, LVCMOS BST_0, BST_1, and BST_2 select the equalizer boost level for EQ channels. BST_0, BST_1,
BST_114and BST_2 are internally pulled Low. See Table 2.
BST_237
Device Control
EN44I, LVCMOS Enable Equalizer input. When held High, normal operation is selected. When held Low,
FEB21I, LVCMOS Force External Boost. When held High, the equalizer boost setting is controlled by the
SD45O, LVCMOS Equalizer Clock Channel Signal Detect Output. Produces a High when signal is detected.
POWER
V
DD
GND22, 24,GNDGround reference. GND should be tied to a solid ground plane through a low impedance
Exposed PadDAPGNDThe exposed pad at the center of the package must be connected to the ground plane.
System Management Bus (SMBus) Interface Control Pins
SDA18IO, LVCMOS SMBus Data Input / Output. Internally pulled High to 3.3V with High-Z pull up.
SDC17I, LVCMOS SMBus Clock Input. Internally pulled High to 3.3V with High-Z pull up.
CS16I, LVCMOS SMBus Chip select. When held High, the equalizer SMBus register is enabled. When held
Other
Reserv19, 20, 38,Reserved. Do not connect.
(1) Note: I = Input,O = Output, IO =Input/Output,
3, 6, 7,PowerVDDpins should be tied to the VDDplane through a low inductance path. A 0.1µF bypass
10, 13,capacitor should be connected between each VDDpin to the GND planes.
15, 46
27, 30,path.
31, 34
39, 40,41,
42, 43, 47,
48
(1)
, TypeDescription
standby mode is selected. EN is internally pulled High. Signal is global to all Data and Clock
channels.
BST_[0:2] pins. When held Low, the equalizer boost level is controlled through the SMBus
(see Table 1) control pins. FEB is internally pulled High.
Low, the equalizer SMBus register is disabled. CS is internally pulled Low. CS is internally
gated with SDC.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (VDD)-0.5V to +4.0V
LVCMOS Input Voltage-0.5V + 4.0V
LVCMOS Output Voltage-0.5V to 4.0V
CML Input/Output Voltage-0.5V to 4.0V
Junction Temperature+150°C
Storage Temperature-65°C to +150°C
Lead Temperature (Soldering, 5 sec.)+260°C
ESD Rating
HBM, 1.5 kΩ, 100 pF>8 kV
CML Inputs>10 kV
Thermal ResistanceθJA, No Airflow30°C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are ensured for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
(1)(2)
MinTypMaxUnits
Supply Voltage (VDDto GND)3.03.33.6V
Ambient Temperature-4025+85°C
(1) Typical values represent most likely parametric norms at VDD= 3.3V, TA= 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
High Level Input Leakage CurrentLVCMOS pins with internal pull-up
resistors
High Level Input Leakage CurrentLVCMOS pins with internal pull-
down resistors
Low Level Input Leakage CurrentLVCMOS pins with internal pull-up
resistors
Low Level Input Leakage CurrentLVCMOS pins with internal pull-
down resistors
High Level Input Voltage2.0VDDV
Low Level Input Voltage00.8V
High Level Output VoltageSD Pin, IOH= -3mA2.4V
Low Level Output VoltageSD Pin, IOL= 3mA0.4V
EN = Low, Power Down Mode70mW
Product Folder Links: DS16EV5110
(1)(2)
-10+10μA
80105μA
-20-10μA
-10+10μA
DS16EV5110
www.ti.com
SNLS249M –FEBRUARY 2007–REVISED APRIL 2013
Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges unless other specified.
SymbolParameterConditionsMinTypMaxUnits
NSupply Noise Tolerance
CML INPUTS
V
TX
V
ICMDC
V
IN
R
LI
R
IN
Input Voltage Swing (LaunchMeasured differentially at TPA
Amplitude)(Figure 2)
Input Common-Mode VoltageDC-Coupled Requirement
Input Voltage SwingMeasured differentially at TPB
Differential Input Return Loss100 MHz– 825 MHz, with fixture's
Input ResistanceIN+ to VDD and IN− to VDD455055Ω
CML OUTPUTS
V
O
V
OCM
tR, t
t
CCSK
t
D
F
Output Voltage SwingMeasured differentially with OUT+
Output common-mode VoltageMeasured Single-endedVDD-0.3VDD-0.2V
Transition Time20% to 80% of differential output
Inter Pair Channel-to-ChannelDifference in 50% crossing
Skew (all 4 Channels)between shortest and longest25ps
Latency350ps
OUTPUT JITTER
TJ1Total Jitter at 1.65 Gbps20m 28 AWG STP DVI Cable
TJ2Total Jitter at 2.25 Gbps20m 28 AWG STP DVI Cable
TJ3Total Jitter at 165 MHzClock Paths
TJ4Total Jitter at 225 MHzClock Paths
RJRandom JitterSee
BIT RATE
F
CLK
Clock FrequencyClock Path
BRBit RateData Path
(3) Allowed supply noise (mV
(4) Specification is ensured by characterization and is not tested in production.
P-P
(5) Deterministic jitter is measured at the differential outputs (TPC of Figure 2), minus the deterministic jitter before the test channel (TPA of
Figure 2). Random jitter is removed through the use of averaging or similar means.
(6) Total Jitter is defined as peak-to-peak deterministic jitter from()+ 14.2 times random jitter in ps
(7) Random jitter contributed by the equalizer is defined as sq rt (J
TPC of Figure 2; JINis the random jitter at the input of the equalizer in ps
(3)
DC to 50MHz100mV
Measured at TPA (Figure 2)
(Figure 2)
effect de-embedded
and OUT− terminated by 50Ω to8001200mV
VDD
voltage, measured within 1" from75240ps
output pins.
Electrical Characteristics — System Management Bus Interface
(1)(2)
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Over recommended operating supply and temperature ranges unless other specified.
SymbolParameterConditionsMinTypMaxUnits
System Bus Interface — DC Specifications
V
IL
V
IH
I
PULLUP
V
DD
I
LEAK-Bus
I
LEAK-Pin
C
I
R
TERM
System Bus Interface Timing Specification
FSMBBus Operating FrequencySee
TBUFBus Free Time Between Stop and Start
THD:STAHold Time After (Repeated) Start Condition.At I
TSU:STARepeated Start Condition Setup Time4.7µs
TSU:STOStop Condition Setup Time4.0µs
THD:DATData Hold Time300ns
TSU:DATData Setup Time250ns
T
TIMEOUT
T
LOW
T
HIGH
T
:SEXTCumulative Clock Low Extend Time (SlaveSee
LOW
t
F
t
R
t
POR
Data, Clock Input Low Voltage0.8V
Data, Clock Input High Voltage2.8V
Current through pull-up resistor or currentVOL = 0.4V
source
10mA
DD
Nominal Bus Voltage3.03.6V
Input Leakage per bus segmentSee
(3)
—200+200µA
Input Leakage per device pin—15µA
DD3.3
PULLUP
(3) (4)
(3) (4) (5)
(6)
(6)
, Max
10pF
1000Ω
10100kHz
4.7µs
4.0µs
2535ms
Capacitance for SDA and SDCSee
Termination ResistanceV
Condition
First CLK generated after this period.
Detect Clock Low TimeoutSee
Clock Low Period4.7µs
Clock High PeriodSee
Device)
Clock/Data Fall TimeSee
Clock/Data Rise TimeSee
Time in which a device must be operationalSee
after power-on reset
(6)
(6)
(6)
(6)
(6)
4.050µs
2ms
300ns
1000ns
500ms
V
(1) Typical values represent most likely parametric norms at VDD= 3.3V, TA= 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
(3) Recommended value. Parameter not tested in production.
(4) Recommended maximum capacitance load per bus segment is 400pF.
(5) Maximum termination voltage should be identical to the device supply voltage.
(6) Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SYSTEM MANAGEMENT BUS (SMBUS) AND CONFIGURATION REGISTERS
The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. The use of the
Chip Select signal is required. Holding the CS pin High enables the SMBus port allowing access to the
configuration registers. Holding the CS pin Low disables the device's SMBus allowing communication from the
host to other slave devices on the bus. In the STANDBY state, the System Management Bus remains active.
When communication to other devices on the SMBus is active, the CS signal for the DS16EV5110s must be
driven Low.
The address byte for all DS16EV5110s is AC'h. Based on the SMBus 2.0 specification, the DS16EV5110 has a
7-bit slave address of 1010110'b. The LSB is set to 0'b (for a WRITE), thus the 8-bit value is 1010 1100 'b or
AC'h.
The SDC and SDA pins are 3.3V LVCMOS signaling and include high-Z internal pull up resistors. External low
impedance pull up resistors maybe required depending upon SMBus loading and speed. Note, these pins are not
5V tolerant.
Transfer of Data via the SMBus
During normal operation the data on SDA must be stable during the time when SDC is High.
There are three unique states for the SMBus:
START: A High-to-Low transition on SDA while SDC is High indicates a message START condition.
STOP: A Low-to-High transition on SDA while SDC is High indicates a message STOP condition.
IDLE: If SDC and SDA are both High for a time exceeding t
are High for a total exceeding the maximum specification for t
SMBus Transactions
The device supports WRITE and READ transactions. See Register Description table for register address, type
(Read/Write, Read Only), default value and function information.
Writing a Register
To write a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High.
2. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
3. The Device (Slave) drives the ACK bit (“0”).
4. The Host drives the 8-bit Register Address.
5. The Device drives an ACK bit (“0”).
6. The Host drive the 8-bit data byte.
7. The Device drives an ACK bit (“0”).
8. The Host drives a STOP condition.
9. The Host de-selects the device by driving its SMBus CS signal Low.
The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
Reading a Register
To read a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High.
2. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
3. The Device (Slave) drives the ACK bit (“0”).
4. The Host drives the 8-bit Register Address.
5. The Device drives an ACK bit (“0”).
6. The Host drives a START condition.
7. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ.
The DS16EV5110 video equalizer comprises three data channels, a clock channel, and a control interface
including a Systeml Management Bus (SMBus) port.
DATA CHANNELS
The DS16EV5110 provides three data channels. Each data channel consists of an equalizer stage, a limiting
amplifier, a DC offset correction block, and a TMDS driver as shown in Figure 3.
EQUALIZER BOOST CONTROL
The data channel equalizers support eight programmable levels of equalization boost. The state of the FEB pin
determines how the boost settings are controlled. If the FEB pin is held High, then the equalizer boost setting is
controlled by the Boost Set pins (BST_[0:2]) in accordance with Table 2. If this programming method is chosen,
then the boost setting selected on the Boost Set pins is applied to all three data channels. When the FEB pin is
held Low, the equalizer boost level is controlled through the SMBus. This programming method is accessed via
the appropriate SMBus registers (see Table 1). Using this approach, equalizer boost settings can be
programmed for each channel individually. FEB is internally pulled High (default setting); therefore if left
unconnected, the boost settings are controlled by the Boost Set pins (BST_[0:2]). The range of boost settings
provided enables the DS16EV5110 to address a wide range of transmission line path loss scenarios, enabling
support for a variety of data rates and formats.
Table 2. EQ Boost Control Table
Control Via SMBusControl Via PinsEQ Boost Setting at
The DS16EV5110 has an Enable feature which provides the ability to control device power consumption. This
feature can be controlled either via the Enable Pin (EN Pin) or via the Enable Control Bit which is accessed
through the SMBus port (see Table 1 and Table 3). If Enable is activated, the data channels and clock channel
are placed in the ACTIVE state and all device blocks function as described. The DS16EV5110 can also be
placed in STANDBY mode to save power. In this mode only the control interface including the SMBus port as
well as the clock channel signal detection circuit remain active.
Table 3. Enable and Device State Control
Register 07[0]EN PinRegister 03[3] (ENDevice State
The clock channel incorporates a limiting amplifier, a DC offset correction, and a TMDS driver as shown in
Figure 4.
CLOCK CHANNEL SIGNAL DETECT
The DS16EV5110 features a signal detect circuit on the clock channel. The status of the clock signal can be
determined by either reading the Signal Detect bit (SD) in the SMBus registers (see Table 1) or by the state of
the SD pin. A logic High indicates the presence of a signal that has exceeded a specified threshold value (called
SD_ON). A logic Low means that the clock signal has fallen below a threshold value (called SD_OFF). These
values are programmed via the SMBus (Table 1). If not programmed via the SMBus, the thresholds take on the
default values for the SD_OFF and SD_ON values as indicated in Table 4. The Signal Detect threshold values
can be changed through the SMBus. All threshold values specified are DC peak-to-peak differential signals
(positive signal minus negative signal) at the input of the device.
The output amplitude of the TMDS drivers for both the data channels and the clock channel can be controlled via
the SMBus (see Table 1). The default output level is 1000mV p-p. The following Table presents the output level
values supported:
Table 5. Output Level Control Settings – REG
0x08[3:2]
Bit 3Bit 2Output Level (mV)
00540
01770
101000 (default)
111200
AUTOMATIC ENABLE FEATURE
It may be desired for the DS16EV5110 to be configured to automatically enter STANDBY mode if no clock signal
is present. STANDBY mode can be implemented by connecting the Signal Detect (SD) pin to the external
(LVCMOS) Enable (EN) pin. In order for this option to function properly, REG07[0] should be set to a “0” (default
value). If the clock signal applied to the clock channel input swings above the SD_ON threshold specified in the
threshold register via the SMBus, then the SD pin is asserted High. If the SD pin is connected to the EN pin, this
will enable the equalizer, limiting amplifier, and output buffer on the data channels and the limiting amplifier and
output buffer on the clock channel; thus the DS16EV5110 will automatically enter the ACTIVE state. If the clock
signal present falls below SD_OFF threshold specified in the threshold register, then the SD pin will be asserted
Low, causing the aforementioned blocks to be placed in the STANDBY state.
The DS16EV5110 is used to recondition DVI/HDMI video signals or differential signals with similar characteristics
after signal loss and degradation due to transmission through a length of shielded or unshielded cable. It is
intended to be used on the Sink-side of the video link. The DS16EV5110A maybe used on the Source or Sink
side of the application. The DS16EV5110 ESD protection circuitry will not support the V
the dowstream device (e.g. DES) is powered ON and the DS16EV5110 is powered OFF. Figure 10 shows the
CML output circuitry and the ESD protection diode (current path). It is also not recommneded to enable the
DS16EV5110 CML outputs without a load attached.
Figure 5. DS16EV5110 Sink-side application
The DS16EV5110 may also be used in certain Source-side application with certain restrictions. The
DS16EV5110 CML outputs will not meet the VOFF parameter required by the HDMI Compliance Test
Specification (v1.3b) when the DS16EV5110 is powered off and the sink device is powered on. A current path
will be enabled through the ESD protection diode (see Figure 10). If full compliance is not required, the
DS16EV5110 may be used in repeater type application as shown in Figure 6.
specification when
OFF
DVI 1.0 AND HDMI V1.2a APPLICATIONS
A single DS16EV5110 can be used to implement cable extension solutions with various resolutions and screen
refresh rates. The range of digital serial rates supported is between 250 Mbps and 1.65 Gbps. For applications
requiring ultra-high resolution for DVI applications (e.g., QXGA and WQXGA), a “dual link” TMDS interface is
required. This is easily configured by using two DS16EV5110 devices as shown in Figure 7.
Figure 6. DS16EV5110 Repeater Application with CAT 5 cable
Product Folder Links: DS16EV5110
DS16EV5110
DS16EV5110
D0
D1
D2
CLK
D3
D4
D5
D0
D1
D2
CLK
D3
D4
D5
CLKCLK
SD
SD
EN
EN
CS
CS
DS16EV5110
SNLS249M –FEBRUARY 2007–REVISED APRIL 2013
www.ti.com
Note the recommended connections between LVCMOS control pins. This provides the Automatic Enable feature
for both devices based on the one active clock channel. In many applications the SMBus is not required (device
is pin controlled), for this application simply leave the three SMBus pins open. SDC and SDA are internally pulled
High, and CS is internally pulled Low, thus the SMBus is in the disabled state.
Figure 7. Connection in Dual Link Application
HDMI V1.3 APPLICATION
The DS16EV5110 can reliably extend operation to distances greater than 20 meters of 28 AWG HDMI cable at
2.25 Gbps, thereby supporting HDMI v1.3 for 1080p HDTV resolution with 12-bit color depth. Please note that
the Electrical Characteristics specified in this document have not been tested for and are not ensured for 2.25
Gbps operation.
DC COUPLED DATA PATHS AND DVI/HDMI COMPLIANCE
The DS16EV5110 is designed to support TMDS differential pairs with DC coupled transmission lines. It contains
integrated termination resistors (50Ω), pulled up to VDD at the input stage, and open collector outputs for DVI /
HDMI for signal swing.
CABLE SELECTION
At higher frequencies, longer cable lengths produce greater losses due to the skin effect. The quality of the cable
with respect to conductor wire gauge and shielding heavily influences performance. Thicker conductors have
lower signal degradation per unit length. In nearly all applications, the DS16EV5110 equalization can be set to
0x04, and equalize up to 22 dB skin effect loss for all input cable configurations at all data rates, without
degrading signal integrity.
28 AWG STP DVI / HDMI CABLES RECOMMENDED BOOST SETTINGS
The following table presents the recommended boost control settings for various data rates and cable lengths for
28 AWG DVI/HDMI compliant configurations. Boost setting maybe done via the three BST[2:0] pins or via the
respective register values.
Table 6. Boost Control Setting for STP Cables
SettingData Rate28 AWG DVI / HDMI
0x04750 Mbps0–25m
0x041.65 Gbps0–20m
0x06750 Mbps25m to greater than 30m
0x061.65 Gbps20m to greater than 25m
0x032.25 Gbps0–15m
0x062.25 Gbps15m to greater than 20m
Figure 8 shows the cable extension and jitter reduction obtained with the use of the equalizer. Table 6 lists the
various gain settings used versus cable length recommendations.
Figure 8. Equalized vs. Unequalized Jitter Performance Over 28 AWG DVI/HDMI Cable
UTP (UNSHIELDED TWIST PAIRS) CABLES
The DS16EV5110 can be used to extend the length of UTP cables, such as Cat5, Cat5e and Cat6 to distances
greater than 20 meters at 1.65 Gbps with < 0.13 UI of jitter. Please note that for non-standard DVI/HDMI cables,
the user must ensure the clock-to-data channel skew requirements are met. Table 7 presents the recommended
boost control settings for various data rates and cable lengths for UTP configurations:
0x03750 Mbps0–25m
0x06750 Mbps25–45m
0x031.65 GbpsGreater than 20m
Product Folder Links: DS16EV5110
051015 20 25 30 35 40
CAT 5 CABLE LENGTH (m)
TOTAL JITTER (UI)
0
0.1
0.2
0.3
0.4
0.5
1.30 Gbps
0.75 Gbps
1.65 Gbps
Unequalized
Equalized
DS16EV5110
SNLS249M –FEBRUARY 2007–REVISED APRIL 2013
www.ti.com
Figure 9 shows the cable extension and jitter reduction obtained with the use of the equalizer. Table 7 lists the
various gain settings used versus cable length recommendations.
Figure 9. Equalized vs. Unequalized Jitter Performance Over Cat5 Cable
General Recommendations
The DS16EV5110 is a high performance circuit capable of delivering excellent performance. Careful attention
must be paid to the details associated with high-speed design as well as providing a clean power supply. Refer
to the LVDS Owner’s Manual for more detailed information on high-speed design tips as well as many other
available resources available addressing signal integrity design issues.
PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS
The TMDS differential inputs and outputs must have a controlled differential impedance of 100Ω. It is preferable
to route TMDS lines exclusively on one layer of the board, particularly for the input traces. The use of vias should
be avoided if possible. If vias must be used, they should be used sparingly and must be placed symmetrically for
each side of a given differential pair. Route the TMDS signals away from other signals and noise sources on the
printed circuit board. All traces of TMDS differential inputs and outputs must be equal in length to minimize intrapair skew.
WQFN FOOTPRINT RECOMMENDATIONS
See application note AN-1187 (SNOA401) for additional information on WQFN packages footprint and soldering
information.
POWER SUPPLY BYPASSING
Two approaches are recommended to ensure that the DS16EV5110 is provided with an adequate power supply.
First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent layers
of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND
planes create a low inductance supply with distributed capacitance. Second, careful attention to supply
bypassing through the proper use of bypass capacitors is required. A 0.1µF bypass capacitor should be
connected to each VDD pin such that the capacitor is placed as close as possible to the DS16EV5110. Smaller
body size capacitors can help facilitate proper component placement. Additionally, three capacitors with
capacitance in the range of 2.2µF to 10µF should be incorporated in the power supply bypassing design as well.
These capacitors can be either tantalum or an ultra-low ESR ceramic and should be placed as close as possible
to the DS16EV5110.
EQUIVALENT I/O STRUCTURES
Figure 10 shows the DS16EV5110 CML output structure and ESD protection circuitry.
Figure 11 shows the DS16EV5110 CML input structure and ESD protection circuitry.
Changes from Revision L (April 2013) to Revision MPage
•Changed layout of National Data Sheet to TI format .......................................................................................................... 18
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
Lead/Ball FinishMSL Peak Temp
(3)
CU SNLevel-3-260C-168 HR-40 to 85DS16EV511
CU SNLevel-3-260C-168 HR-40 to 85DS16EV511
Op Temp (°C)Top-Side Markings
(4)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
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