TEXAS INSTRUMENTS CDCR81 Technical data

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CDCR81

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

D

300-MHz Differential Clock Source for
Direct RAMBUS Memory Systems for an
600-MHz Data Transfer Rate

D

Synchronizes the Clock Domains of the
Rambus Channel With an External System
or Processor Clock

D

Three Power Operating Modes to Minimize
Power for Mobile and Other
Power-Sensitive Applications

D

Operates From a Single 3.3-V Supply and
120-mW at 300 MHz (Typ)

D

Packaged in a Shrink Small-Outline
Package (DBQ)

D

Wide Phase-Lock Input Frequency Range
33 MHz to 100 MHz

D

No External Components Required for PLL

D

Supports Independent Channel Clocking

D

Spread Spectrum Clocking Tracking
Capability to Reduce EMI

D

Designed For Use With TI’s 133-MHz Clock
Synthesizers CDC925, CDC924, CDC922
and CDC921

description

DBQ PACKAGE

(TOP VIEW)

VDDIR

REFCLK

V

GNDP

GNDI

PCLKM

SYNCLKN

GNDC

V

V

DD

STOPB

PWRDNB

NC – No internal connection

DD

DD

IPD

1
2

P

3
4
5
6
7
8

C

9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

S0
S1
V

O

DD

GNDO
CLK
NC
CLKB
GNDO
V

O

DD

MULT0
MULT1
S2

The Direct Rambus clock generator (DRCG) provides the necessary clock signals to support a Direct Rambus
memory subsystem. It includes signals to synchronize the Direct Rambus channel clock to an external system
or processor clock. It is designed to support Direct Rambus memory on desktop, workstation, server and mobile
PC motherboards. DRCG also provides an off-the-shelf solution for a broad range of Direct Rambus memory
applications.

The DRCG provides clock multiplication and phase alignment for a Direct Rambus memory subsystem to
enable synchronous communication between the Rambus channel and ASIC clock domains. In a Direct
Rambus memory subsystem, a system clock source provides the REFCLK and PCLK clock references to the
DRCG and memory controller, respectively. The DRCG multiplies REFCLK and drives a high-speed BUSCLK
to RDRAMs and the memory controller. Gear ratio logic in the memory controller divides the PCLK and BUSCLK
frequencies by ratios M and N such that PCLK/M = SYNCLK/N, where SYNCLK = BUSCLK/4. The DRCG
detects the phase difference between PCLK/M and SYNCLK/N and adjusts the phase of BUSCLK such that
the skew between PCLK/M and SYNCLK/N is minimized. This allows data to be transferred across the
SYNCLK/PCLK boundary without incurring additional latency.

User control is provided by multiply and mode selection terminals. The multiply terminals provide selection of
one of four clock frequency multiply ratios, generating BUSCLK frequencies ranging from 267 MHz to 400 MHz
with clock references ranging from 33 MHz to 100 MHz. The CDCR81 meets Rambus Clock Generator,
Revision 1.0 specification up to 300 MHz. The mode select terminals can be used to select a bypass mode
where the frequency multiplied reference clock is directly output to the Rambus channel for systems where
synchronization between the Rambus clock and a system clock is not required. Test modes are provided to
bypass the PLL and output REFCLK on the Rambus channel and to place the outputs in a high-impedance state
for board testing.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Direct Rambus and Rambus are trademarks of Rambus Inc.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1999, Texas Instruments Incorporated

1

CDCR81
DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

description (continued)

The CDCR81 is characterized for operation over free-air temperatures of 0°C to 85°C.

functional block diagram

PWRDWNB S0 S1 S2 STOPB

Test MUX

Bypass MUX

ByPCLK

PLLCLK

REFCLK

PLL

B

Phase

Aligner

CLK
CLKB

A

φ

2

MULT0
MULT1

FUNCTION TABLE

MODE

Normal 0 0 0 Phase aligned clock Phase aligned clock B
Bypass 1 0 0 PLLCLK PLLCLKB
Test 1 1 0 REFCLK REFCLKB
Output test (OE) 0 1 X Hi-Z Hi-Z
Reserved 0 0 1 — —
Reserved 1 0 1 — —
Reserved 1 1 1 Hi-Z Hi-Z

†

X = don’t care, Hi-Z = high impedance

S0 S1 S2 CLK CLKB

PACLK

D

SYNCLKNPCLKM

†

2

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I/O

DESCRIPTION

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

Terminal Functions

TERMINAL

NAME NO.

CLK 20 O Output clock
CLKB 18 O Output clock (complement)
GNDC 8 GND for phase aligner
GNDI 5 GND for control inputs
GNDO 17, 21 GND for clock outputs
GNDP 4 GND for PLL
MULT0 15 I PLL multiplier select
MULT1 14 I PLL multiplier select
NC 19 Not used
PCLKM 6 I Phase detector input
PWRDNB 12 I Active low power down
REFCLK 2 I Reference clock
S0 24 I Mode control
S1 23 I Mode control
S2 13 I Mode control
STOPB 11 I Active low output disable
SYNCLKN 7 I Phase detector input
VDDC 9 VDD for phase aligner
VDDIPD 10 Reference voltage for phase detector inputs and STOPB
VDDIR 1 Reference voltage for REFCLK
VDDO 16, 22 VDD for clock outputs
VDDP 3 VDD for PLL

CDCR81

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3

CDCR81
DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

PLL divider selection

Table 1 lists the supported REFCLK and BUSCLK frequencies. Other REFCLK frequencies are permitted,
provided that (267 MHz < BUSCLK < 400 MHz) and (33 MHz < REFCLK < 100 MHz).

Table 1. REFCLK and BUSCLK Frequencies

MULT0 MULT1

0 0 67 4 267
0 1 50 6 300
0 1 67 6 400
1 1 33 8 267
1 1 50 8 400
1 0 100 8/3 267

REFCLK

(MHz)

MULTIPLY

RATIO

BUSCLK

(MHz)

clock output driver states

Table 2. Clock Output Driver States

STATE PWRDNB STOPB CLK CLKB

Powerdown 0 X GND GND

CLK stop 1 0 VX,

Normal 1 1

†

Depending on the state of S0, S1, and S2.

STOP

PACLK/PLLCLK/

REFCLK

†

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

Supply voltage range, VDD (see Note 1) –0.5 V to 4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output voltage range, VO, at any output terminal –0.5 V to V

Input voltage range,VI, at any input terminal –0.5 V to VDD + 0.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ESD rating TBD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation see Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T
Storage temperature range, T

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to the GND terminals.

0°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

VX,

STOP

PACLKB/PLLCLKB/

REFCLKB

DD

†

+ 0.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DISSIPATION RATING TABLE

PACKAGE

DBQ 1400 mW 11 mW/°C 905 mW 740 mW

‡

This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.

4

TA ≤ 25°C

POWER RATING

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DERATING FACTOR

ABOVE TA = 25°C

‡

POWER RATING

TA = 70°C

TA = 85°C

POWER RATING

CDCR81

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage, V
High-level input voltage, VIH (CMOS) 0.7×V
Low-level input voltage, VIL (CMOS) 0.3×V
Initial phase error at phase detector inputs

(required range for phase aligner)
REFCLK low-level input voltage, V
REFCLK high-level input voltage, V
Input signal low voltage, VIL (STOPB) 0.3×VDDIPD V
Input signal high voltage, VIH (STOPB) 0.7×VDDIPD V
Input reference voltage for (REFCLK) (VDDIR) 1.235 3.465 V
Input reference voltage for (PCLKM and SYSCLKN) (VDDIPD) 1.235 3.465 V
High-level output current, I
Low-level output current, I
Operating free-air temperature, T

DD

IL

IH

OH

OL

A

timing requirements

Input cycle time, t
Input cycle-to-cycle jitter 250 ps
Input duty cycle over 10,000 cycles 40% 60%
Input frequency modulation, f
Modulation index, non-linear maximum 0.5% 0.6%
Phase detector input cycle time (PCLKM and SYNCLKN) 30 100 ns
Input slew rate, SR 1 4 V/ns
Input duty cycle (PCLKM and SYNCLKN) 25% 75%

c(in)

mod

3.135 3.3 3.465 V
DD

DD

–0.5×t

c(PD)

0.7×VDDIR V

0 85 °C

0.5×t

c(PD)

0.3×VDDIR V

–16 mA

16 mA

MIN MAX UNIT

10 40 ns

30 33 kHz

V
V

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5

CDCR81

I

g

A

I

A

ZOOutput impedance

Ω

Reference current

VDDIR, VDDIPD

V

465 V

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)

PARAMETER TEST CONDITIONS

V

O(STOP)

V

O(X)

V

O

V

IK

V

OH

V

OL

I

OH

I

OL

I

OZ

I

OZ(STOP)

I

OZ(PD)

IH

IL

C

I

C

O

I

DD(PD)

I

DD(CLKSTOP)

I

DD(NORMAL)

†

VDD refers to any of the following; VDD, VDDIPD, VDDIR, VDDO, VDDC, and VDDP

‡

All typical values are at VDD = 3.3 V, TA = 25°C.

Output voltage during CLK Stop (StopB=0) See Figure 1 1.1 2
Output crossing-point voltage See Figures 1 and 6 1.3 1.8 V
Output voltage swing See Figure 1 0.4 0.6 V
Input clamp voltage VDD = 3.135 V, II = –18 mA –1.2 V

See Figure 1 2

High-level output voltage

Low-level output voltage

High-level output current

Low-level output current

High-impedance-state output current S0 = 0, S1 = 1 ±10 µA
High-impedance-state output current

during CLK stop
High-impedance-state output current in

powerdown state

REFCLK, PCLKM,

High-level input
current

Low-level input
current

p

p

Input capacitance VI = VDD or GND 1.8 pF
Output capacitance VO = VDD or GND 3.1 pF

Supply current in powerdown state
Supply current in CLK stop state BUSCLK configured for 400 MHz 30 mA

Supply current in normal state BUSCLK = 400 MHz 70 mA

SYNCLKN, STOPB
PWRDNB, S0, S1,

S2, MULT0, MULT1
REFCLK, PCLKM,

SYNCLKN, STOPB
PWRDNB, S0, S1,

S2, MULT0, MULT1
High state RI at IO –14.5 mA to –16.5 mA 15 26 40
Low state RI at IO 14.5 mA to 16.5 mA 11 17 35

VDD = min to max,
VDD = 3.135 V, IOH = –16 mA 2.4

See Figure 1 1
VDD = min to max,
VDD = 3.135 V, IOL = 16 mA 0.5
VDD = 3.135 V, VO = 1 V –32 –52
VDD = 3.3 V,
VDD = 3.465 V, VO = 3.135 V –14.5 –21
VDD = 3.135 V, VO = 1.95 V 43 61.5
VDD = 3.3 V,
VDD = 3.465 V, VO = 0.4 V 25.5 36

Stop= 0, VO = GND or V
PWDNB= 0,

VO = GND or V
VDD = 3.465 V, VI = V

VDD = 3.465 V, VI = V

VDD = 3.465 V, VI = 0 –10

VDD = 3.465 V, VI = 0 –10

= 3.

DD

REFCLK = 0 MHz to 100 MHz,
PWDNB = 0, STOPB = 1

DD

,

†

IOH = –1 mA

IOL = 1 mA 0.1

VO = 1.65 V –51

VO = 1.65 V 65

DD

DD

DD

PWRDNB = 0 50 µA
PWRDNB = 1 0.5 mA

MIN TYP‡MAX UNIT

VDD–

0.1 V

±100 µA

–10 100 µA

10

10

200 µA

V

V

mA

mA

µ

µ

6

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,

Total cycle jitter over 1, 2,

See Figure 3

ps

(DC,err)

duty cycle error

alignment

t

Normal3ms

t

VDDNormal3ms

CDCR81

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

switching characteristics over recommended operating free-air temperature range (unless
otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

t

c(out) Clock output cycle time

t

(jitter)

t

(phase)

t

(phase, SSC)

t

(DC)

t

tr, t

f

∆t

†

All typical values are at VDD = 3.3 V, TA = 25°C.

Total cycle jitter over 1, 2
3, 4, 5, or 6 clock cycles

Phase detector phase error for distributed loop Static phase error –50 50 ps
PLL output phase error when tracking SSC Dynamic phase error –100 100 ps
Output duty cycle over 10,000 cycles See Figure 4 45% 55%

Output cycle-to-cycle

Output rise and fall times (measured at 20%-80% of
output voltage)

Difference between rise and fall times on a single device
(20%–80%) |tf – tr|

Stopped phase
alignment

Infinite phase
alignment

Stopped phase
alignment

Infinite phase

267 MHz –
400 MHz

267 MHz
300 MHz

267 MHz –
400 MHz

267 MHz 70
300 MHz
400 MHz 90

See Figure 3 60 ps

See Figure 5 50 ps

See Figure 5

See Figure 7 200 450 ps

See Figure 7 100 ps

2.5 3.75 ns

80

p

70

ps

80

state transition latency specifications

PARAMETER FROM TO

Delay time, PWRDNB↑ to CLK/CLKB output

(powerup)

(VDDpowerup)

t

(MULT)

t

(CLKON)

t

(CLKSETL)

t

(CLKOFF)

t

(powerdown)

t

(STOP)

settled (excluding t
Delay time, PWRDNB↑ to internal PLL and

clock are on and settled
Delay time, powerup to CLK/CLKB output

settled
Delay time, powerup to internal PLL and clock

are on and settled
MULT0 and MULT1 change to CLK/CLKB

output resettled (excluding t
STOPB↑ to CLK/CLKB glitch-free clock edges
STOPB↑ to CLK/CLKB output settled to within

50 ps of the phase before STOPB was disabled
STOPB↑ to CLK/CLKB output disabled Normal
Delay time, PWRDNB↓ to the device in power-

down mode
Maximum time in CLKSTOP (STOPB = 0)

before re-entering normal mode (STOPB = 1)

(DISTLOCK)

)

(DISTLOCK)

TEST

CONDITIONS

Power-

down

)

Normal Normal See Figure 9 1 ms

CLK

Stop

Stop

STOPB

STOPB Normal 100 µs

Normal See Figure 10 10 ns

CLK

Normal See Figure 10 20 cycles
CLK

Stop
Power-

down

See Figure 8 3

See Figure 8 3

See Figure 10 5 ns

MIN TYP†MAX UNIT

1 ms

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7

CDCR81
DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

state transition latency specifications (continued)

t

(ON)

t

(DISTLOCK)

PARAMETER FROM TO

Minimum time in normal mode (STOPB = 1)
before re-entering CLKSTOP (STOPB = 0)

Time from when CLK/CLKB output is settled to
when the phase error between SYNCLKN and
PCLKM falls within t

(ERR-PD)

Normal

Un-

locked

PARAMETER MEASUREMENT INFORMATION

68 Ω, ±5%

10 pF

68 Ω, ±5%

Figure 1. Test Load and Voltage Definitions (V

39 Ω, ±5%

39 Ω, ±5%

10 pF

TEST

CONDITIONS

CLK
stop

Locked 5 ms

100 pF

O(STOP)

, V

O(X)

MIN TYP†MAX UNIT

100 ms

RT = 28 Ω

RT = 28 Ω

, VO, VOH, VOL)

CLK

CLKB

CLK

CLKB

t

c1

Cycle-to-cycle jitter = | tc1 – tc2| over 10000 consecutive cycles

t

c2

Figure 2. Cycle-to-Cycle Jitter

t

c3

Cycle-to-cycle jitter = | tc3 – tc4| over 10000 consecutive cycles

Figure 3. Short Term Cycle-to-Cycle Jitter over 4 Cycles

t

c4

8

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ООООООО

CDCR81

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

CLK

CLKB

t

pd1

t

c5

Duty cycle = (t

CLK

CLKB

Duty cycle error = t

Figure 4. Output Duty Cycle

– t

pd2

pd3

Pd1/tc5

t

c6

)

t

pd2

t

c7

t

pd3

PWRDNB

CLK/CLKB

CLK

CLKB

Figure 5. Duty Cycle Error (Cycle-to-Cycle)

Figure 6. Crossing-Point Voltage

80%

20%

t

r

t

f

Figure 7. Voltage Waveforms

t

powerup

Figure 8. PWRDNB Transition T imings

V

O(X)+

V

O(X), nom

V

O(X)–

V

OH

V

OL

t

powerdown

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9

CDCR81
DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

MULT0 and/or

MULT1

CLK/CLKB

Figure 9. MULT Transition Timings

STOPB

t

CLKSETL

t

CLKON

(see Note A)

CLK/CLKB

t

ON

t

MULT

t

STOP

t

CLKOFF

(see Note A)

NOTE A: V

= VO ±200 mV

ref

Output clock
not specified

glitches ok

Clock output settled

Clock enabled
and glitch free

within 50 ps of the
phase before disabled

Figure 10. STOPB Transition Timings

10

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CDCR81

DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

HIGH-LEVEL OUTPUT CURRENT

vs

HIGH-LEVEL OUTPUT VOLTAGE

0

–0.02

Weak

–0.04

Rambus (min)

–0.06

Nom

–0.08

– High-Level Output Current – A
I

– Low-Level Output Current – A
I

OH

OL

–0.1

–0.12

0.12

0.1

0.08

0.06

0.04

0.02

Strong

Rambus (max)

0.5 1.5

120

VOH – High-Level Output Voltage – V

2.5 3 3.5 4

Figure 11. Pullup IBIS I/V Chart

LOW-LEVEL OUTPUT CURRENT

vs

LOW-LEVEL OUTPUT VOLTAGE

Rambus (max)

Rambus (min)

Strong

Nom

Weak

0

0.5 1.5

120

VOL – Low-Level Output Voltage – V

2.5 3 3.5 4

Figure 12. Pulldown IBIS I/V Chart

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11

CDCR81
DIRECT RAMBUS CLOCK GENERATOR

SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999

MECHANICAL DATA

DBQ (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

24–PIN SHOWN

0.025 (0,64)

24

1

0.069 (1,75) MAX

0.012 (0,30)

0.008 (0,20)

13

0.157 (3,99)

0.150 (3,81)

12

A

0.010 (0,25)

0.004 (0,10)

0.005 (0,13)

0.244 (6,20)

0.228 (5,80)

Seating Plane

0.004 (0,10)

M

0.008 (0,20) NOM

0°–8°

Gage Plane

0.010 (0,25)

0.035 (0,89)

0.016 (0,40)

PINS **

DIM

A MAX

A MIN

NOTES: A. All linear dimensions are in inches (millimeters).

B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15).
D. Falls within JEDEC MO-137

16

0.197

(5,00)

0.188

(4,78)

2420

0.344 0.344

(8,74)

(8,56)

(8,74)

0.3370.337

(8,56)

4073301/C 02/97

12

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IMPORTANT NOTICE

T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright  1999, Texas Instruments Incorporated