Texas Instruments CC2650MODA Datasheet

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CC2650MODA SimpleLink™ Bluetooth®low energy Wireless MCU Module

1 Device Overview

1.1 Features

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• Microcontroller – Powerful ARM®Cortex®-M3 – EEMBC CoreMark®Score: 142 – Up to 48-MHz Clock Speed – 128KB of In-System Programmable Flash – 8KB of SRAM for Cache – 20KB of Ultra-Low-Leakage SRAM – 2-Pin cJTAG and JTAG Debugging – Supports Over-The-Air (OTA) Upgrade
• Ultra-Low-Power Sensor Controller – Can Run Autonomous From the Rest of the
System – 16-Bit Architecture – 2KB of Ultra-Low-Leakage SRAM for
Code and Data
• Efficient Code Size Architecture, Placing Drivers,
Bluetooth®low energy Controller, IEEE®802.15.4
Medium Access Control (MAC), and Bootloader in ROM
• Integrated Antenna
• Peripherals – All Digital Peripheral Pins Can Be Routed to
Any GPIO
– Four General-Purpose Timer Modules
(8 × 16-Bit or 4 × 32-Bit Timer, PWM Each)
– 12-Bit ADC, 200-ksamples/s, 8-Channel
Analog MUX – Continuous Time Comparator – Ultra-Low-Power Analog Comparator – Programmable Current Source – UART – 2 × SSI (SPI, MICROWIRE, TI) – I2C – I2S – Real-Time Clock (RTC) – AES-128 Security Module – True Random Number Generator (TRNG) – 15 GPIOs – Support for Eight Capacitive Sensing Buttons – Integrated Temperature Sensor
• External System – On-Chip Internal DC-DC Converter – No External Components Needed, Only Supply
Voltage
CC2650MODA
SWRS187D –AUGUST 2016–REVISED JULY 2019
• Low Power – Wide Supply Voltage Range
– Operation from 1.8 to 3.8 V – Active-Mode RX: 6.2 mA – Active-Mode TX at 0 dBm: 6.8 mA – Active-Mode TX at +5 dBm: 9.4 mA – Active-Mode MCU: 61 µA/MHz – Active-Mode MCU: 48.5 CoreMark/mA – Active-Mode Sensor Controller:
0.4 mA + 8.2 µA/MHz
– Standby: 1 µA (RTC Running and RAM/CPU
Retention) – Shutdown: 100 nA (Wake Up on External
Events)
• RF Section – 2.4-GHz RF Transceiver Compatible With
Bluetooth low energy (BLE) 5.1 Specification and IEEE 802.15.4 PHY and MAC
– CC2650MODA RF-PHY Qualified (QDID:
88415)
– Excellent Receiver Sensitivity (–97 dBm for
Bluetooth low energy and –100 dBm for
802.15.4), Selectivity, and Blocking
Performance – Programmable Output Power up to +5 dBm – Pre-certified for Compliance With Worldwide
Radio Frequency Regulations
– ETSI RED (Europe)
– IC (Canada)
– FCC (USA)
– ARIB STD-T66 (Japan)
– JATE (Japan)
• Tools and Development Environment – Full-Feature and Low-Cost Development Kits – Multiple Reference Designs for Different RF
Configurations – Packet Sniffer PC Software – Sensor Controller Studio – SmartRF™ Studio – SmartRF Flash Programmer 2 – IAR Embedded Workbench®for ARM – Code Composer Studio™
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2650MODA
SWRS187D –AUGUST 2016–REVISED JULY 2019

1.2 Applications

Building Automation
Medical and Health
Appliances
Industrial
Consumer Electronics

1.3 Description

The SimpleLink™ CC2650MODA device is a wireless microcontroller (MCU) module that targets
Bluetooth®low energy applications. The CC2650MODA device can also run ZigBee®and 6LoWPAN and
ZigBee RF4CE™ remote control applications. The module is based on the SimpleLink CC2650 wireless MCU, a member of the CC26xx family of cost-
effective, ultra-low-power, 2.4-GHz RF devices. Very-low active RF and MCU current and low-power mode current consumption provide excellent battery lifetime and allow for operation on small coin-cell batteries and in energy-harvesting applications.
The CC2650MODA module contains a 32-bit ARM Cortex-M3 processor that runs at 48 MHz as the main processor and a rich peripheral feature set that includes a unique ultra-low-power sensor controller. This sensor controller is good for interfacing with external sensors or for collecting analog and digital data autonomously while the rest of the system is in sleep mode. Thus, the CC2650MODA device is good for applications within a wide range of products including industrial, consumer electronics, and medical devices.
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Proximity Tags
Alarm and Security
Remote Controls
Wireless Sensor Networks
The CC2650MODA module is pre-certified for operation under the regulations of the FCC, IC, ETSI, and ARIB. These certifications save significant cost and effort for customers when integrating the module into their products.
The Bluetooth low energy controller and the IEEE 802.15.4 MAC are embedded in the ROM and are partly running on a separate ARM®Cortex®-M0 processor. This architecture improves overall system performance and power consumption and makes more flash memory available.
The Bluetooth low energy software stack (BLE-Stack) and the ZigBee software stack ( Z-Stack™) are available free of charge.
Device Information
PART NUMBER PACKAGE BODY SIZE
CC2650MODAMOH MOH (Module) 16.90 mm × 11.00 mm
(1) For more information, see Section 10.
(1)
2
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Main CPU
128-KB
Flash
Sensor Controller
cJTAG
20-KB SRAM
ROM
ARM
Cortex-M3
DC-DC Converter
RF core
ARM
Cortex-M0
DSP Modem
4-KB
SRAM
ROM
Sensor Controller Engine
2× Analog Comparators
12-bit ADC, 200 ks/s
Constant Current Source
SPI / I2C Digital Sensor IF
2-KB SRAM
Time-to-Digital Converter
General Peripherals / Modules
4× 32-bit Timers
2× SSI (SPI, µWire, TI)
Watchdog Timer
Temp. / Batt. Monitor
RTC
I2C
UART
I2S
15 GPIOs
AES
32 ch. µDMA
ADC ADC
Digital PLL
SimpleLink CC2650MODA Wireless MCU Module
TRNG
8-KB
Cache
24-MHz Crystal
Oscillator
32.768-kHz Crystal
Oscillator
RF Balun
Copyright © 2017, Texas Instruments Incorporated
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1.4 Functional Block Diagram

Figure 1-1 is a block diagram for the CC2650MODA device.
CC2650MODA
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Figure 1-1. CC2650MODA Block Diagram
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CC2650MODA
SWRS187D –AUGUST 2016–REVISED JULY 2019
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Table of Contents

1 Device Overview ......................................... 1
1.1 Features .............................................. 1
1.2 Applications........................................... 2
1.3 Description............................................ 2
1.4 Functional Block Diagram ............................ 3
2 Revision History ......................................... 5
3 Device Comparison ..................................... 6
3.1 Related Products ..................................... 6
4 Terminal Configuration and Functions.............. 7
4.1 Module Pin Diagram.................................. 7
4.2 Pin Functions ......................................... 8
5 Specifications ............................................ 9
5.1 Absolute Maximum Ratings .......................... 9
5.2 ESD Ratings.......................................... 9
5.3 Recommended Operating Conditions ................ 9
5.4 Power Consumption Summary...................... 10
5.5 General Characteristics ............................. 10
5.6 Antenna ............................................. 11
5.7 1-Mbps GFSK (Bluetooth low energy) – RX ........ 11
5.8 1-Mbps GFSK (Bluetooth low energy) – TX ........ 12
5.9 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –
RX ................................................... 12
5.10 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –
TX ................................................... 13
5.11 24-MHz Crystal Oscillator (XOSC_HF) ............. 13
5.12 32.768-kHz Crystal Oscillator (XOSC_LF).......... 13
5.13 48-MHz RC Oscillator (RCOSC_HF) ............... 13
5.14 32-kHz RC Oscillator (RCOSC_LF)................. 13
5.15 ADC Characteristics................................. 14
5.16 Temperature Sensor ................................ 15
5.17 Battery Monitor...................................... 15
5.18 Continuous Time Comparator....................... 15
5.19 Low-Power Clocked Comparator ................... 15
5.20 Programmable Current Source ..................... 16
5.21 DC Characteristics .................................. 16
5.22 Thermal Resistance Characteristics for MOH
Package ............................................. 17
5.23 Timing Requirements ............................... 17
5.24 Switching Characteristics ........................... 17
5.25 Typical Characteristics .............................. 20
6 Detailed Description ................................... 24
6.1 Overview ............................................ 24
6.2 Functional Block Diagram........................... 24
6.3 Main CPU ........................................... 25
6.4 RF Core ............................................. 25
6.5 Sensor Controller ................................... 26
6.6 Memory.............................................. 27
6.7 Debug ............................................... 27
6.8 Power Management................................. 28
6.9 Clock Systems ...................................... 29
6.10 General Peripherals and Modules .................. 29
6.11 System Architecture................................. 30
6.12 Certification.......................................... 30
6.13 End Product Labeling ............................... 32
6.14 Manual Information to the End User ................ 32
6.15 Module Marking ..................................... 33
7 Application, Implementation, and Layout ......... 34
7.1 Application Information.............................. 34
7.2 Layout ............................................... 35
8 Environmental Requirements and
Specifications........................................... 36
8.1 PCB Bending........................................ 36
8.2 Handling Environment .............................. 36
8.3 Storage Condition ................................... 36
8.4 Baking Conditions................................... 36
8.5 Soldering and Reflow Condition .................... 37
9 Device and Documentation Support ............... 38
9.1 Device Nomenclature ............................... 38
9.2 Tools and Software ................................. 39
9.3 Documentation Support ............................. 40
9.4 Texas Instruments Low-Power RF Website ........ 40
9.5 Low-Power RF eNewsletter ......................... 40
9.6 Community Resources .............................. 41
9.7 Additional Information ............................... 41
9.8 Trademarks.......................................... 41
9.9 Electrostatic Discharge Caution..................... 42
9.10 Export Control Notice ............................... 42
9.11 Glossary............................................. 42
10 Mechanical, Packaging, and Orderable
Information .............................................. 42
10.1 Packaging Information .............................. 42
10.2 PACKAGE OPTION ADDENDUM .................. 43
10.3 PACKAGE MATERIALS INFORMATION........... 44
4
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2 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from July 1, 2017 to July 31, 2019 Page
Added Module Marking section. .................................................................................................. 33
Added Environmental Requirements and Specifications section. ............................................................ 36
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Revision HistoryCopyright © 2016–2019, Texas Instruments Incorporated
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CC2650MODA
SWRS187D –AUGUST 2016–REVISED JULY 2019

3 Device Comparison

Table 3-1. Device Family Overview
DEVICE PHY SUPPORT FLASH (KB) RAM (KB) GPIO PACKAGE
CC2650MODAMOH Multiprotocol
(1) The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.

3.1 Related Products

TI's Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low-power RF
solutions suitable for a broad range of applications. The offerings range from fully customized solutions to turn key offerings with pre-certified hardware and software (protocol).
TI's SimpleLink™ Sub-1 GHz Wireless MCUs Long-range, low-power wireless connectivity solutions
are offered in a wide range of Sub-1 GHz ISM bands.
Companion Products Review products that are frequently purchased or used in conjunction with this
product.
SimpleLink™ CC2650 Wireless MCU LaunchPad™ Development Kit The CC2650 LaunchPad™
development kit brings easy Bluetooth®low energy connectivity to the LaunchPad kit ecosystem with the SimpleLink ultra-low power CC26xx family of devices. This LaunchPad kit also supports development for multi-protocol support for the SimpleLink multi-standard CC2650 wireless MCU and the rest of CC26xx family of products: CC2630 wireless MCU for ZigBee®/6LoWPAN and CC2640 wireless MCU for Bluetooth low energy.
Reference Designs for CC2650MODA TI Designs Reference Design Library is a robust reference design
library spanning analog, embedded processor and connectivity. Created by TI experts to help you jump-start your system design, all TI Designs include schematic or block diagrams, BOMs, and design files to speed your time to market. Search and download designs at
ti.com/tidesigns.
(1)
128 20 15 MOH
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(Exposed GND Pads)
3
1 2
4 5 6 7 19
21 20
18 17
23 22
10 11 12 13 14 15 16
Antenna
GND DIO 0 DIO 1
DIO 2 DIO 3 DIO 4
JTAG_TMS
VDD VDD
DIO 14 DIO 13 DIO 12 DIO 11 DIO 10
JTAG_TCK
DIO 5/JTAG_TDO
DIO 6/JTAG_TDI
nRESET
DIO 7
DIO 8
DIO 9
8 9
25 24
GND GND
G1 G2
G3 G4
NC NC
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4 Terminal Configuration and Functions

Section 4.1 shows pin assignments for the CC2650MODA device.

4.1 Module Pin Diagram

CC2650MODA
SWRS187D –AUGUST 2016–REVISED JULY 2019
(1) The following I/O pins marked in bold in the pinout have high-drive capabilities:
DIO 2
DIO 3
DIO 4
JTAG_TMS
DIO 5/JTAG_TDO
DIO 6/JTAG_TDI
(2) The following I/O pins marked in italics in the pinout have analog capabilities:
DIO 7
DIO 8
DIO 9
DIO 10
DIO 11
DIO 12
DIO 13
DIO 14
Figure 4-1. CC2650MODA MOH Package
(16.9-mm × 11-mm) Module Pinout
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4.2 Pin Functions

Table 4-1 describes the CC2650MODA pins.
Table 4-1. Signal Descriptions – MOH Package
PIN NAME PIN NO. PIN TYPE DESCRIPTION
DIO_0 4 Digital I/O GPIO, Sensor Controller DIO_1 5 Digital I/O GPIO, Sensor Controller DIO_2 6 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_3 7 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_4 8 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_5/JTAG_TDO 11 Digital I/O GPIO, high-drive capability, JTAG_TDO DIO_6/JTAG_TDI 12 Digital I/O GPIO, high-drive capability, JTAG_TDI DIO_7 14 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_8 15 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_9 16 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_10 17 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_11 18 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_12 19 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_13 20 Digital I/O, Analog I/O GPIO, Sensor Controller, analog DIO_14 21 Digital I/O, Analog I/O GPIO, Sensor Controller, analog EGP G1, G2, G3, G4 Power Ground – Exposed ground pad GND 1, 3, 25 Ground JTAG_TCK 10 Digital I/O JTAG TCKC JTAG_TMS 9 Digital I/O JTAG TMSC, high-drive capability NC 2, 24 NC Not Connected—TI recommends leaving these pins floating nRESET 13 Digital input Reset, active low. No internal pullup VDD 22, 23 Power 1.8-V to 3.8-V main chip supply
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5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
VDD Supply voltage –0.3 4.1 V
Voltage on any digital pin
V
T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
(2) All voltage values are with respect to ground, unless otherwise noted. (3) Including analog capable DIO.
Voltage on ADC input
in
Input RF level 5 dBm Storage temperature –40 85 °C
stg
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(3)
Voltage scaling enabled –0.3 VDD
Voltage scaling disabled, VDD as reference –0.3 VDD / 2.9

5.2 ESD Ratings

Human body model (HBM), per ANSI/ESDA/JEDEC
(1)
V
ESD
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Electrostatic discharge
JS001
Charged device model (CDM), per JESD22-C101
(1)(2)
MIN MAX UNIT
–0.3 VDD + 0.3, max 4.1 V
VALUE UNIT
All pins ±1000
(2)
RF pins ±500 Non-RF pins ±500
V
VVoltage scaling disabled, internal reference –0.3 1.49

5.3 Recommended Operating Conditions

MIN MAX UNIT
Ambient temperature –40 85 °C
Operating supply voltage (VDD)
For operation in battery-powered and 3.3-V systems (internal DC-DC can be used to minimize power consumption)
1.8 3.8 V
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5.4 Power Consumption Summary

Tc= 25°C, VDD= 3.0 V with internal DC-DC converter, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reset. RESET_N pin asserted or VDD below Power-on­Reset threshold
Shutdown. No clocks running, no retention 150 Standby. With RTC, CPU, RAM and (partial) register
retention. RCOSC_LF Standby. With RTC, CPU, RAM and (partial) register
retention. XOSC_LF
I
core
Core current consumption
Peripheral Current Consumption (Adds to core current I
Peripheral power domain
Serial power domain Delta current with domain enabled 13 RF core
I
peri
µDMA Delta current with clock enabled, module idle 130 Timers Delta current with clock enabled, module idle 113 I2C Delta current with clock enabled, module idle 12 I2S Delta current with clock enabled, module idle 36 SSI Delta current with clock enabled, module idle 93 UART Delta current with clock enabled, module idle 164
(1) I
is not supported in Standby or Shutdown.
peri
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF
Idle. Supply systems and RAM powered. 550 Active. Core running CoreMark Radio RX 6.2
Radio TX, 5-dBm output power 9.4
for each peripheral unit activated)
core
Delta current with domain enabled 20
Delta current with power domain enabled, clock enabled, RF Core Idle
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100
nA
1
1.2
2.5
µA
2.7
1.45 mA +
31 µA/MHz
mARadio TX, 0-dBm output power 6.8
(1)
237
µA

5.5 General Characteristics

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FLASH MEMORY
Supported flash erase cycles before failure
Flash page/sector erase current Average delta current 12.6 mA Flash page/sector erase time
(1)
Flash page/sector size 4 KB Flash write current Average delta current, 4 bytes at a time 8.15 mA Flash write time
(1)
4 bytes at a time 8 µs
(1) This number is dependent on flash aging and will increase over time and erase cycles.
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100 k Cycles
8 ms
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5.6 Antenna

Tc= 25°C, VDD= 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Polarization Linear Peak Gain 2450 MHz 1.26 dBi Efficiency 2450 MHz 57%

5.7 1-Mbps GFSK (Bluetooth low energy) – RX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with Tc= 25°C, VDD= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity BER = 10 Receiver saturation BER = 10
Frequency error tolerance
Difference between center frequency of the received RF signal and local oscillator frequency.
Data rate error tolerance –750 750 ppm Co-channel rejection
Selectivity, ±1 MHz
Selectivity, ±2 MHz
Selectivity, ±3 MHz
Selectivity, ±4 MHz
(1)
(1)
(1)
(1)
(1)
Selectivity, ±5 MHz or more
Selectivity, Image frequency Selectivity,
Image frequency ±1 MHz Out-of-band blocking
(3)
Wanted signal at –67 dBm, modulated interferer in channel, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±2 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±5 MHz,
(1)
BER = 10 Wanted signal at –67 dBm, modulated interferer at image
(1)
frequency, BER = 10 Wanted signal at –67 dBm, modulated interferer at ±1 MHz from
(1)
image frequency, BER = 10
30 MHz to 2000 MHz –20 dBm Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm
Intermodulation
Spurious emissions, 30 MHz to 1000 MHz
Spurious emissions, 1 GHz to 12.75 GHz
Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405
and 2408 MHz respectively, at the given power level
Conducted measurement in a 50-Ω single-ended load. Suitable
for systems targeting compliance with EN 300 328, EN 300 440
class 2, FCC CFR47, Part 15 and ARIB STD-T-66
Conducted measurement in a 50-Ω single-ended load. Suitable
for systems targeting compliance with EN 300 328, EN 300 440
class 2, FCC CFR47, Part 15 and ARIB STD-T-66 RSSI dynamic range 70 dB RSSI accuracy ±4 dB
(1) Numbers given as I/C dB (2) X / Y, where X is +N MHz and Y is –N MHz (3) Excluding one exception at F
wanted
–3 –3
–3
–3
–3
–3
–3
–3
–3
–3
/ 2, per Bluetooth Specification
–97 dBm
4 dBm
–350 350 kHz
–6 dB
(2)
7 / 3
(2)
29 / 23
(2)
38 / 26
(2)
42 / 29
32 dB
23 dB
(2)
3 / 26
–34 dBm
–71 dBm
–62 dBm
dB
dB
dB
dB
dB
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5.8 1-Mbps GFSK (Bluetooth low energy) – TX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with Tc= 25°C, VDD= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting 5 dBm Output power, lowest setting –21 dBm
f < 1 GHz, outside restricted bands –43
Spurious emission conducted measurement
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)
(1)
f < 1 GHz, restricted bands ETSI –58 f < 1 GHz, restricted bands FCC –57 f > 1 GHz, including harmonics –45
dBm

5.9 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – RX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with Tc= 25°C, VDD= 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity PER = 1% –100 dBm Receiver saturation PER = 1% –7 dBm
Adjacent channel rejection
Alternate channel rejection
Channel rejection, ±15 MHz or more
Blocking and desensitization, 5 MHz from upper band edge
Blocking and desensitization, 10 MHz from upper band edge
Blocking and desensitization, 20 MHz from upper band edge
Blocking and desensitization, 50 MHz from upper band edge
Blocking and desensitization, –5 MHz from lower band edge
Blocking and desensitization, –10 MHz from lower band edge
Blocking and desensitization, –20 MHz from lower band edge
Blocking and desensitization, –50 MHz from lower band edge
Spurious emissions, 30 MHz to 1000 MHz
Spurious emissions, 1 GHz to 12.75 GHz
Frequency error tolerance RSSI dynamic range 100 dB
RSSI accuracy ±4 dB
Wanted signal at –82 dBm, modulated interferer at ±5 MHz, PER = 1%
Wanted signal at –82 dBm, modulated interferer at ±10 MHz, PER = 1%
Wanted signal at –82 dBm, undesired signal is IEEE 802.15.4 modulated channel, stepped through all channels 2405 to 2480 MHz, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Wanted signal at –97 dBm (3 dB above the sensitivity level), CW jammer, PER = 1%
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T­66
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T­66
Difference between center frequency of the received RF signal and local oscillator frequency
35 dB
52 dB
57 dB
64 dB
64 dB
65 dB
68 dB
63 dB
63 dB
65 dB
67 dB
–71 dBm
–62 dBm
>200 ppm
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5.10 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – TX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with Tc= 25°C, VDD= 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting 5 dBm Output power, lowest setting –21 dBm Error vector magnitude At maximum output power 2%
f < 1 GHz, outside restricted bands –43
Spurious emission conducted measurement
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)
(1)
f < 1 GHz, restricted bands ETSI –58 f < 1 GHz, restricted bands FCC –57 f > 1 GHz, including harmonics –45
dBm

5.11 24-MHz Crystal Oscillator (XOSC_HF)

(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 24 MHz Crystal frequency tolerance Start-up time
(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device. (2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per
Bluetooth and IEEE 802.15.4 specification
(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection
(3)
(2)
–40 40 ppm
150 µs

5.12 32.768-kHz Crystal Oscillator (XOSC_LF)

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32.768 kHz Initial crystal frequency tolerance, Bluetooth
low energy applications Crystal aging -3 3 ppm/year
Tc= 25°C
–20 20 ppm

5.13 48-MHz RC Oscillator (RCOSC_HF)

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency 48 MHz Uncalibrated frequency accuracy ±1% Calibrated frequency accuracy Start-up time 5 µs
(1) Accuracy relatively to the calibration source (XOSC_HF).
(1)
±0.25%

5.14 32-kHz RC Oscillator (RCOSC_LF)

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Calibrated frequency 32.8 kHz Temperature coefficient 50 ppm/°C
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SWRS187D –AUGUST 2016–REVISED JULY 2019

5.15 ADC Characteristics

Tc= 25°C, VDD= 3.0 V and voltage scaling enabled, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 V Resolution 12 Bits Sample rate 200 ksps Offset Internal 4.3-V equivalent reference Gain error Internal 4.3-V equivalent reference
(3)
DNL INL
(4)
Differential nonlinearity >–1 LSB Integral nonlinearity ±3 LSB
Internal 4.3-V equivalent reference
9.6-kHz input tone
ENOB Effective number of bits
Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference
9.6-kHz input tone
THD
Total harmonic distortion
Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference
9.6-kHz input tone SINAD and SNDR
Signal-to-noise and distortion ratio
Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference
9.6-kHz input tone SFDR
Spurious-free dynamic range
Internal 1.44-V reference, voltage scaling disabled, 32
samples average, 200 ksps, 300-Hz input tone Conversion time Serial conversion, time-to-output, 24-MHz clock 50 Current consumption Internal 4.3-V equivalent reference
Current consumption VDD as reference 0.75 mA
Equivalent fixed internal reference (input voltage
scaling enabled). For best accuracy, the ADC Reference voltage
conversion should be initiated through the TI-RTOS™
API to include the gain or offset compensation factors
stored in FCFG1.
Fixed internal reference (input voltage scaling
disabled). For best accuracy, the ADC conversion Reference voltage
should be initiated through the TI-RTOS API to include
the gain or offset compensation factors stored in
FCFG1. This value is derived from the scaled value
Reference voltage
Reference voltage
(4.3 V) as follows: V
VDD as reference (Also known as RELATIVE) (input
voltage scaling enabled)
VDD as reference (Also known as RELATIVE) (input
voltage scaling disabled)
= 4.3 V × 1408 / 4095
ref
200 ksps, voltage scaling enabled. Capacitive input, Input Impedance
input impedance depends on sampling frequency and
sampling time
(1) Using IEEE Std 1241™-2010 for terminology and test methods. (2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V. (3) No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-24. (4) For a typical example, see Figure 5-25. (5) Applied voltage must be within absolute maximum ratings (see Section 5.1) at all times.
(2) (2)
(2)
, 200 ksps,
(2)
, 200 ksps,
(2)
, 200 ksps,
(2)
, 200 ksps,
(2)
(1)
4.3
VDD V
VDD / 2.82
www.ti.com
V
DD
2 LSB
2.4 LSB
9.8 BitsVDD as reference, 200 ksps, 9.6-kHz input tone 10
11.1
–65
dBVDD as reference, 200 ksps, 9.6-kHz input tone –69
–71
60
dBVDD as reference, 200 ksps, 9.6-kHz input tone 63
69
67
dBVDD as reference, 200 ksps, 9.6-kHz input tone 72
73
clock­cycles
0.66 mA
(2)(5)
V
1.48 V
(5)
V
>1 MΩ
14
Specifications Copyright © 2016–2019, Texas Instruments Incorporated
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SWRS187D –AUGUST 2016–REVISED JULY 2019

5.16 Temperature Sensor

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 4 °C Range –40 85 °C Accuracy ±5 °C Supply voltage coefficient
(1) Automatically compensated when using supplied driver libraries.
(1)
3.2 °C/V

5.17 Battery Monitor

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 50 mV Range 1.8 3.8 V Accuracy 13 mV

5.18 Continuous Time Comparator

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 V External reference voltage 0 V Internal reference voltage DCOUPL as reference 1.27 V Offset 3 mV Hysteresis <2 mV Decision time Step from –10 mV to +10 mV 0.72 µs Current consumption when enabled
(1) Additionally, the bias module must be enabled when running in standby mode.
(1)
8.6 µA
DD DD
V V

5.19 Low-Power Clocked Comparator

Tc= 25°C, VDD= 3.0 V, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDD V Clock frequency 32 kHz Internal reference voltage, VDD / 2 1.49–1.51 V Internal reference voltage, VDD / 3 1.01–1.03 V Internal reference voltage, VDD / 4 0.78–0.79 V Internal reference voltage, DCOUPL / 1 1.25–1.28 V Internal reference voltage, DCOUPL / 2 0.63–0.65 V Internal reference voltage, DCOUPL / 3 0.42–0.44 V Internal reference voltage, DCOUPL / 4 0.33–0.34 V Offset <2 mV Hysteresis <5 mV Decision time Step from –50 mV to +50 mV <1 clock-cycle Current consumption when enabled 362 nA
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SWRS187D –AUGUST 2016–REVISED JULY 2019
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5.20 Programmable Current Source

Tc= 25°C, VDD= 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current source programmable output range 0.25–20 µA Resolution 0.25 µA
Current consumption
(1) Additionally, the bias module must be enabled when running in standby mode.
(1)
Including current source at maximum programmable output
23 µA

5.21 DC Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA= 25°C, VDD= 1.8 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 1.32 1.54 V GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.26 0.32 V GPIO VOH at 4-mA load IOCURR = 1 1.32 1.58 V GPIO VOL at 4-mA load IOCURR = 1 0.21 0.32 V GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 71.7 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDD 21.1 µA GPIO high/low input transition,
no hysteresis GPIO low-to-high input transition,
with hysteresis GPIO high-to-low input transition,
with hysteresis GPIO input hysteresis IH = 1, difference between 0 1 and 1 0 points 0.33 V
TA= 25°C, VDD= 3.0 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 2.68 V GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.33 V GPIO VOH at 4-mA load IOCURR = 1 2.72 V GPIO VOL at 4-mA load IOCURR = 1 0.28 V
TA= 25°C, VDD= 3.8 V
GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 277 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDD 113 µA GPIO high/low input transition,
no hysteresis GPIO low-to-high input transition,
with hysteresis GPIO high-to-low input transition,
with hysteresis GPIO input hysteresis IH = 1, difference between 0 1 and 1 0 points 0.4 V
TA= 25°C
VIH
VIL
IH = 0, transition between reading 0 and reading 1 0.88 V
IH = 1, transition voltage for input read as 0 1 1.07 V
IH = 1, transition voltage for input read as 1 0 0.74 V
IH = 0, transition between reading 0 and reading 1 1.67 V
IH = 1, transition voltage for input read as 0 1 1.94 V
IH = 1, transition voltage for input read as 1 0 1.54 V
Lowest GPIO input voltage reliably interpreted as a «High»
Highest GPIO input voltage reliably interpreted as a «Low»
0.2 VDD
0.8 VDD
16
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