TEXAS INSTRUMENTS bq78PL114 Technical data

bq78PL114
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.................................................................................................................................... SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008
PowerLAN™ Master Gateway Battery Management Controller
With PowerPump™ Cell Balancing Technology
1

FEATURES APPLICATIONS

23
Designed for Managing up to 12 Series Cell
Battery Systems
SmartSafety Features:
Prevention: Optimal Cell Management – Diagnosis: Improved Sensing of Cell
Problems
Fail Safe: Detection of Event Precursors
Rate-of-Change Detection of All Important Cell
Characteristics: – Voltage – Impedance – Cell Temperature
PowerPump Technology Transfers Charge
Efficiently From Cell to Cell During All Operating Conditions, Resulting in Longer Run Time and Cell Life
High-Resolution 18-Bit Integrating Delta-Sigma
Coulomb Counter for Precise Charge-Flow Measurements and Gas Gauging
Multiple Independent Δ - Σ ADCs: One-per-Cell
Voltage, Plus Separate Temperature, Current, and Safety
Simultaneous, Synchronous Measurement of
Pack Current and Individual Cell Voltages
Very Low Power Consumption: < 250 µ A Active, < 150 µ A Standby, < 40 µ A Ship, and
< 1- µ A Undervoltage Shutdown
Accurate, Advanced Temperature Monitoring of Cells and MOSFETs With up to Six Sensors This permits accurate temperature monitoring of each
Fail-Safe Operation of Pack Protection Circuits: Up to Three Power MOSFETs and One Secondary Safety Output (Fuse)
Fully Programmable Voltage, Current, Balance, and Temperature-Protection Features
External Inputs for Auxiliary MOSFET Control
Smart Battery System 1.1 Compliant via
SMBus or SPI Interface With SHA-1 Authentication Option
Equipment
Mobility Devices (E-Bike)
Uninterruptible Power Supplies and Hand-Held
Tools

DESCRIPTION

The bq78PL114 master gateway battery controller is part of a complete Li-Ion control, monitoring, and safety solution designed for large series cell strings.
The bq78PL114, along with PowerLAN cell monitors, provides complete battery system control, communications, and safety functions for a structure of three to 12 series cells. This PowerLAN system provides simultaneous, synchronized voltage and temperature measurements using one-ADC-per-cell technology. Voltage measurements are also synchronized with pack current measurements, eliminating system-induced noise from measurements. This allows the precise, continuous, real-time calculation of cell impedance under all operating conditions, even during widely fluctuating load conditions.
PowerPump technology transfers charge between cells to balance their voltage and capacity. Balancing is possible during all battery modes: charge, discharge, and rest. Highly efficient charge-transfer circuitry nearly eliminates energy loss while providing true real-time balance between cells, resulting in longer run-time and improved cycle life.
Temperature is sensed by up to six external sensors. cell individually. Firmware is then able to compensate
for the temperature-induced effects on capacity, impedance, and OCV on a cell-by-cell basis, resulting in superior charge/ discharge and balancing control.
External MOSFET control inputs provide user­definable direct hardware control over MOSFET states. Smart control prevents excessive current through MOSFET body diodes. Auxiliary inputs can be used for enhanced safety and control in large multicell arrays.
1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2 PowerLAN, PowerPump, bqWizard are trademarks of Texas Instruments. 3 All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
FLASH
PRE
CHG
EFCID
EFCIC
SMBus
DSG
SMBCLK
SMBDAT
SPROT
SPI-DI
CSBAT
SPI-DO
CSPACK
SPI-CLK
GPIO
6
CELL 4
Voltage
Temp
Balance
SPI
SELECT
V4
PUMP4
XT4
C
ELL 3
Voltage
Temp
Balance
V3
PUMP3
XT3
CELL 2
Voltage
Temp
Balance
V2
PUMP2
XT2
CELL 1
Voltage
Temp
Balance
2.5VLDO
V1
PUMP1
VLDO1
XT1
Watchdog
Coulomb Counter CCBAT
CCPACKCurrent A/D
Core / CPU
Measure
I/O
Safety
SR
AM
RSTN
Internal
Temperature
RISC
CPU
Internal
Oscillator
Reset
Logic
First-LevelSafety
and
FET Control
Second-Level
Safety
LED1–5, LEDEN
B0320-02
PowerLAN
Communication
Link
P-LAN
bq78PL114
SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008 ....................................................................................................................................
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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DESCRIPTION (CONTINUED)

The bq78PL114 is completely user-configurable, with parametric tables in flash memory to suit a variety of cell chemistries, operating conditions, safety controls, and data reporting needs. It is easily configured using the supplied bqWizard™ graphical user interface (GUI). The device is fully programmed and requires no algorithm or firmware development.
Figure 1. bq78PL114 Internal Block Diagram
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Product Folder Link(s): bq78PL114
bq76PL102 Cell
MonitorWith PowerPump
Balancing
PowerLAN
Communication
Link
PowerLAN
MasterGateway
BatteryController
bq78PL114
Pack
Positive
Pack
Negative
Example8-cellconfigurationshown
+
SMBus
R
SEN
SE
PackProtection
CircuitsandFuse
B0332-01
bq76PL102 Cell
MonitorWith PowerPump
Balancing
bq78PL114
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.................................................................................................................................... SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008
Figure 2. Example PowerLAN Multicell System Implementation
ORDERING INFORMATION
Product Cell Configuration
(2)
Package Ordering Number Transport
bq78PL114 3 to 8 series cells
bq78PL114 QFN-48, 7-mm (PREVIEW) × 7-mm
3 to 10 series cells RGZ – 40 ° C to 85 ° C
bq78PL114
(PREVIEW)
3 to 12 series cells
(1) Authentication options are also available; contact TI for additional information. (2) For configurations consisting of more than four series cells, additional bq76PL102 parts must be used. (3) Some historical data storage limits exist for the S10 and S12 versions.
Package Temperature
Designator Range
(1)
Quantity,
Media
bq78PL114RGZT
bq78PL114RGZR
bq78PL114S10RGZT
bq78PL114S10RGZR
bq78PL114S12RGZT
bq78PL114S12RGZR
(3)
(3)
(3)
(3)
250, tape and reel
2500, tape and reel
250, tape and reel
2500, tape and reel
250, tape and reel
2500, tape and reel
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Product Folder Link(s): bq78PL114
P0023-16
bq78PL114
RGZPackage
(TopView)
CHG
SDO0
DSG
SDI1
PRE
P1N
EFCIC
P2S
EFCID
P2N
CCBAT
SDO2
CCPACK
SDI3
VLDO1
P3S
CSBAT
P3N
CSPACK
P4S
OSCI
P4N
OSCO
P-LAN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
LED5
VSS
LED4
V1
LED3
XT1
LED2
XT2
LED1
V2
LEDEN
VLDO2
SPROT
V3
SELECT
XT3
SPI-DO
XT4
SPI-DI
V4
SPI-CLK
SMBDAT
RSTN
SMBCLK
36
35
34
33
32
31
30
29
28
27
26
25
48
47
46
45
44
43
42
41
40
39
38
37
ThermalPad
bq78PL114
SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008 ....................................................................................................................................

AVAILABLE OPTIONS

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Figure 3. bq78PL114 Pinout
(1)
NAME NO. TYPE
CCBAT 6 IA Coulomb counter input (sense resistor), connect to battery negative CCPACK 7 IA Coulomb counter input (sense resistor), connect to pack negative CHG 1 O Charge MOSFET control (active-high, enables current flow) CSBAT 9 IA Current sense input (safety), connect to battery negative CSPACK 10 IA Current sense input (safety), connect to pack negative DSG 2 O Discharge MOSFET control (active-high, low opens MOSFET) EFCIC 4 I External charge MOSFET control input EFCID 5 I External discharge MOSFET control input LED1 32 IO LED1 active-low LED2 33 IO LED2 active-low LED3 34 IO LED3 active-low LED4 35 IO LED4 active-low LED5 36 IO LED5 active-low LEDEN 31 IO LEDEN common-anode drive (active-high) OSCI 11 I External oscillator input (optional) OSCO 12 O External oscillator output (optional)
(1) I – input, IA analog input, O output, OA analog output, P power 4 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated
TERMINAL FUNCTIONS
DESCRIPTION
Product Folder Link(s): bq78PL114
bq78PL114
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.................................................................................................................................... SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008
TERMINAL FUNCTIONS (continued)
NAME NO. TYPE
P1N 15 O Charge-balance gate drive, cell 1 north P2S 16 O Charge-balance gate drive, cell 2 south P2N 17 O Charge-balance gate drive, cell 2 north P3N 21 O Charge-balance gate drive, cell 3 north P3S 20 O Charge-balance gate drive, cell 3 south P4N 23 O Charge-balance gate drive, cell 4 north P4S 22 O Charge-balance gate drive, cell 4 south P-LAN 24 IO PowerLAN I/O to external bq76PL10x nodes PRE 3 O Pre-Charge MOSFET control (active-high.) RSTN 25 I Device reset, active-low SDI1 14 I Connect to SDO0 via a capacitor SDI3 19 I Internal PowerLAN connection connect to SDO2 SDO0 13 O Requires 100-k pullup resistor to VLDO1 SDO2 18 O Internal PowerLAN connection connect to SDI3 SELECT 29 O Auxiliary SPI control output SMBCLK 37 IO SMBus clock signal SMBDAT 38 IO SMBus data signal SPI-CLK 26 IO SPI port clock SPI-DI 27 I SPI master-out-slave-in SPI-DO 28 O SPI master-in-slave-out SPROT 30 O Secondary protection output, active-high (FUSE) V1 47 IA Cell-1 positive input V2 44 IA Cell-2 positive input V3 42 IA Cell-3 positive input V4 39 IA Cell-4 positive input VLDO1 8 P Internal LDO-1 output, bypass with capacitor VLDO2 43 P Internal LDO-2 output, bypass with capacitor VSS 48 IA Cell-1 negative input XT1 46 IA External temperature-sensor-1 input XT2 45 IA External temperature-sensor-2 input XT3 41 IA External temperature-sensor-3 input XT4 40 IA External temperature-sensor-4 input – P Thermal pad. Connect to VSS
(2) SPI functionality requires a firmware option, consult the factory for additional information.
(1)
(2)
(2)
(2) (2)
DESCRIPTION
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Product Folder Link(s): bq78PL114
bq78PL114
SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008 ....................................................................................................................................

ABSOLUTE MAXIMUM RATINGS

(1)
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over operating free-air temperature range (unless otherwise noted)
RANGE UNITS
T
A
T
stg
V4 – V3 Maximum cell voltage – 0.5 to 5.0 V V3 – V2 Maximum cell voltage – 0.5 to 5.0 V V2 – V1 Maximum cell voltage – 0.5 to 5.0 V V1 – VSS Maximum cell voltage – 0.5 to 5.0 V Voltage on LED1 – LED5, CCBAT,
CCPACK, CSBAT, CSPACK, XT1, XT2, OSCI, OSCO, SDIx, SDOx, SPROT, P-LAN
Voltage on XT3, XT4, LEDEN Maximum voltage range V EFCIC, EFCID With respect to VSS – 0.5 to 5.5 V
Voltage on SMBCLK, SMBDAT With respect to VSS – 0.5 to 6 V Voltage on PRE, CHG, DSG With respect to VSS – 0.5 to (VLDO1 + 0.5) V Current through PRE, CHG, DSG,
LED1 – LED5, P-LAN VLDO1 maximum current Maximum current draw from VLDO 20 mA
ESD tolerance 2 kV Lead temperature, soldering Total time < 3 seconds 300 ° C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Operating free-air temperature (ambient) – 40 to 85 ° C Storage temperature – 65 to 150 ° C
Maximum voltage on any I/O pin V
Maximum current source/sink 20 mA
JEDEC, JESD22-A114 human-body model, R = 1500 , C = 100 pF
(VSS 0.5) to
(VLDO1 + 0.5)
(V2 0.5) to
(VLDO2 + 0.5)
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.................................................................................................................................... SLUS850A – SEPTEMBER 2008 – REVISED SEPTEMBER 2008

ELECTRICAL CHARACTERISTICS

TA= 40 ° C to 85 ° C (unless otherwise noted)

DC Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(1)
V
CELL
I
DD
I
STBY
I
SHIP
I
ECUV
V
OL
V
OH
V
IL
V
IH
Operating range Cells balanced 2.3 4.5 V Operating-mode current Measure / report state 250 µ A Standby-mode current SMBCLK = SMBDAT = L 100 µ A Ship-mode current 30 µ A Extreme cell under voltage All cells < 2.7 V and any cell < ECUV set
shutdown current point General I/O pins IOL< 4 mA 0 0.5 V
(2)
General I/O pins IOH< – 4 mA V
0.1 V
LDO1
General I/O pins 0.25 V General I/O pins 0.75 V
LDO1
1 µ A
LDO1
(1) Device remains operational to 1.85 V with reduced accuracy and performancce. (2) Does not apply to SMBus pins.

Voltage-Measurement Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Measurement range 2.5 4.5 V Resolution < 1 mV
Accuracy mV
25 ° C ± 5 0 ° C to 60 ° C ± 10
V V

Current-Sense Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Measurement range Input offset TA= 25 ° C ± 50 µ V Offset drift TA= 0 ° C to 60 ° C 0.5 µ V/ ° C Resolution 18 µ V Full-scale error Full-scale error drift TA= 0 ° C to 60 ° C 50 PPM/ ° C
(1) Default range. Corresponds to ± 10 A using a 10-m sense resistor. Other gains and ranges are available (eight options). (2) After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor.

Coulomb-Counter Characteristics

over operating free-air temperature range (unless otherwise noted)
Resolution 5 nVh Intergral nonlinearity 0.008% Snap-to-zero (deadband) ± 100
(1) Shares common input with Current Sense section (2) After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor. (3) Corresponds to 20 mA using 5-m sense resistor
(1)
(2)
TA= 25 ° C ± 0.1%
(1) (2)
– 0.2 0.2 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(3)
µ V
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