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bq24314DSG
Schematic [ru]
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Texas Instruments bq24314DSG, bq24314DSJ, bq24316DSG, bq24316DSJ Schematic [ru]

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AC Adapter
VDC
GND
1
2
7
5
4
6
8
bq24316DSG
bq24080
ChargerIC
SYSTEM
IN
OUT
VBAT
FAULT
CE
VSS
ILIM
APPLICATIONSCHEMATIC
www.ti.com
OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND
Li+ CHARGER FRONT-END PROTECTION IC
1

FEATURES

2
• Provides Protection for Three Variables:
– Input Overvoltage, with Rapid Response in
< 1 μ s
– User-Programmable Overcurrent with
Current Limiting
– Battery Overvoltage
• 30V Maximum Input Voltage
• Supports up to 1.5A Input Current
• Robust Against False Triggering Due to
Current Transients
• Thermal Shutdown
• Enable Input
• Status Indication – Fault Condition
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
• Available in Space-Saving Small 8 Lead 2 × 2
SON and 12 Lead 4x3 SON Packages

APPLICATIONS

• Mobile Phones and Smart Phones
• PDAs
• MP3 Players
• Low-Power Handheld Devices
• Bluetooth Headsets

DESCRIPTION

The bq24314 and bq24316 are highly integrated circuits designed to provide protection to Li-ion batteries from failures of the charging circuit. The IC continuously monitors the input voltage, the input current, and the battery voltage. In case of an input overvoltage condition, the IC immediately removes power from the charging circuit by turning off an internal switch. In the case of an overcurrent condition, it limits the system current at the threshold value, and if the overcurrent persists, switches the pass element OFF after a blanking period. Additionally, the IC also monitors its own die temperature and switches off if it becomes too hot. The input overcurrent threshold is user-programmable.
The IC can be controlled by a processor and also provides status information about fault conditions to the host.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
www.ti.com
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
DEVICE
bq24314DSG 5.85 V 2mm x 2mm SON CBV bq24314DSJ 5.85 V 4mm x 3mm SON CBX bq24316DSG 6.80 V 2mm x 2mm SON CBW bq24316DSJ 6.80 V 4mm x 3mm SON BZC
(1) For the most current package and ordering information, see the
(2) To order a 3000 pcs reel add R to the part number, or to order a 250
(2)
OVP THRESHOLD PACKAGE MARKING
Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
pcs reel add T to the part number.
(1)

PACKAGE DISSIPATION RATINGS

PART NO. PACKAGE R
BQ24314DSG BQ24316DSG
BQ24314DSJ BQ24316DSJ

ABSOLUTE MAXIMUM RATINGS

2 × 2 SON 5 ° C/W 75 ° C/W
4 × 3 SON 5 ° C/W 40 ° C/W
(1)
θ JC
over operating free-air temperature range (unless otherwise noted)
PARAMETER PIN VALUE UNIT
IN (with respect to VSS) – 0.3 to 30
Input voltage OUT (with respect to VSS) – 0.3 to 12 V
ILIM, FAULT, CE, VBAT (with respect to VSS) – 0.3 to 7 Input current IN 2.0 A Output current OUT 2.0 A Output sink current FAULT 15 mA Junction temperature, T Storage temperature, T Lead temperature (soldering, 10 seconds) 300 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.
J
STG
– 40 to 150 ° C – 65 to 150 ° C
R
θ JA

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range (unless otherwise noted)
V
IN
I
IN
I
OUT
R
ILIM
T
J
2 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Input voltage range 3.3 26 V Input current, IN pin 1.5 A Output current, OUT pin 1.5 A OCP Programming resistor 15.0 90.0 k Ω Junction temperature 0 125 ° C
Product Folder Link(s): bq24314 bq24316
MIN MAX UNIT
www.ti.com
SLUS763C – JULY 2007 – REVISED OCTOBER 2007

ELECTRICAL CHARACTERISTICS

over junction temperature range 0 ° C ≤ TJ≤ 125 ° C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IN
V
UVLO
V
HYS-UVLO
T
DGL(PGOOD)
I
DD
I
STDBY
INPUT TO OUTPUT CHARACTERISTICS
VDO Drop-out voltage IN to OUT CE = Low, VIN= 5V, I
INPUT OVERVOLTAGE PROTECTION
V
OVP
t
PD(OVP)
V
HYS-OVP
t
ON(OVP)
INPUT OVERCURRENT PROTECTION
I
OCP
I
OCP
t
BLANK(OCP)
t
REC(OCP)
BATTERY OVERVOLTAGE PROTECTION
BV
OVP
V
HYS-BOVP
I
VBAT
T
DGL(BOVP)
THERMAL PROTECTION
T
J(OFF)
T
J(OFF-HYS)
LOGIC LEVELS ON CE
V
IL
V
IH
I
IL
I
IH
LOGIC LEVELS ON FAULT
V
OL
I
HI-Z
(1) Not tested in production. Specified by design.
Under-voltage lock-out, input power detected threshold
CE = Low, VINincreasing from 0V to 3V 2.6 2.7 2.8 V
Hysteresis on UVLO CE = Low, VINdecreasing from 3V to 0V 200 260 300 mV Deglitch time, input power CE = Low. Time measured from VIN0V → 5V 1 μ s rise-time,
detected status to output turning ON Operating current 400 600 μ A
CE = Low, No load on OUT pin, VIN= 5V, R
= 25k Ω
ILIM
Standby current CE = High, VIN= 5.0V 65 95 μ A
= 1A 170 280 mV
OUT
Input overvoltage bq24314 5.71 5.85 6.00 V protection CE = Low, VINincreasing from 5V to 7.5V threshold
Input OV propagation delay
bq24316
(1)
CE = Low 1 μ s Hysteresis on OVP CE = Low, VINdecreasing from 7.5V to 5V 25 60 110 mV Recovery time from input CE = Low, Time measured from
overvoltage condition VIN7.5V → 5V, 1 μ s fall-time
Input overcurrent protection threshold range
Input overcurrent protection CE = Low, R threshold
= 25k Ω
ILIM
Blanking time, input overcurrent detected
Recovery time from input overcurrent condition
Battery overvoltage protection CE = Low, VIN> 4.4V threshold
Hysteresis on BV
OVP
DSG V
Input bias current on VBAT pin
Package DSJ V
Package
Deglitch time, battery overvoltage CE = Low, VIN> 4.4V. Time measured from V detected 4.1V to 4.4V to FAULT going low.
CE = Low, VIN> 4.4V 200 275 320 mV
= 4.4V, TJ= 25 ° C
BAT
= 4.4V, TJ= 85 ° C
BAT
rising from
VBAT
Thermal shutdown temperature 140 150 ° C Thermal shutdown hysteresis 20 ° C
Low-level input voltage 0 0.4 V High-level input voltage 1.4 V Low-level input current V High-level input current V
Output low voltage I Leakage current, FAULT pin HI-Z V
= 0V 1 μ A
CE
= 1.8V 15 μ A
CE
= 5mA 0.2 V
SINK
= 5V 10 μ A
FAULT
bq24314 bq24316
8 ms
6.60 6.80 7.00 V
8 ms
300 1500 mA
930 1000 1070 mA
176 μ s
64 ms
4.30 4.35 4.4 V
10
nA
10
176 μ s
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): bq24314 bq24316
www.ti.com
OUT
FAULT
VSS
THERMAL
SHUTDOW
CE
COUNTERS,
CONTROL,
AND STATUS
ILIM
VBAT
V
IN
ILIMREF
ILIMREF - Δ
t
BLANK(OCP)
t
DGL(PGOOD)
I
SNS
I
SNS
OFF
t
DGL(BOVP)
ChargePump, Bandgap, BiasGen
Q1
V
BG
V
BG
V
IN
V
BG
OVP
UVLO
V
BG
Currentlimiting loop
OCP comparator
IN
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
Figure 1. Simplified Block Diagram
4 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): bq24314 bq24316
www.ti.com
NC
VSS
FAULT
IN
OUT
CE
1
2
3
6
8
7
4
5
VBAT
ILIM
bq24314DSG bq24316DSG
FAULT
NC
VSS
CE
3
4
5
8
10
9
6
7
VBAT
ILIM
2
IN
1
NC
12
OUT
11
bq24314DSJ bq24316DSJ
IN
NC
OUT
SLUS763C – JULY 2007 – REVISED OCTOBER 2007

TERMINAL FUNCTIONS

TERMINAL
NAME DSJ DSG
IN VSS. For the 12 pin (DSJ-suffix) device, ensure that pins 1 and 2 are connected together on the
OUT 10, 11 8 O Output terminal to the charging system. Connect external 1 μ F ceramic capacitor (minimum) to VSS. VBAT 8 6 I Battery voltage sense input. Connect to pack positive terminal through a resistor.
ILIM CE 7 5 I Chip enable input. Active low. When CE = High, the input FET is off. Internally pulled down. FAULT 4 4 O VSS 3 2 – Ground terminal NC 5, 6, 12 3
Thermal device. The thermal pad must be connected to the same potential as the VSS pin on the printed PAD circuit board. Do not use the thermal pad as the primary ground input for the device. The VSS pin
1, 2 1 I Input power, connect to external DC supply. Connect external 1 μ F ceramic capacitor (minimum) to
9 7 I/O Input overcurrent threshold programming. Connect a resistor to VSS to set the overcurrent
I/O DESCRIPTION
PCB at the device.
threshold.
Open-drain output, device status. FAULT = Low indicates that the input FET Q1 has been turned off due to input overvoltage, input overcurrent, battery overvoltage, or thermal shutdown.
These pins may have internal circuits used for test purposes. Do not make any external connections at these pins for normal operation.
There is an internal electrical connection between the exposed thermal pad and the VSS pin of the
–
must be connected to ground at all times.
bq24314 bq24316
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): bq24314 bq24316
www.ti.com
V
IN
V
OUT
I
OUT
V
IN
V
OUT
FAULT
V
IN
V
OUT
FAULT
MaxV =6.84V
OUT
V
IN
V
OUT
MaxV =6.76V
OUT
FAULT
V
IN
V
OUT
MaxV =6.84V
OUT
FAULT
V
IN
V
OUT
MaxV =6.76V
OUT
FAULT
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007

TYPICAL OPERATING PERFORMANCE

Test conditions (unless otherwise noted) for typical operating performance: V R
ILIM
= 25 k Ω , R
= 100 k Ω , TA= 25 ° C, V
BAT
= 3.3V (see Figure 23 for the Typical Application Circuit)
PU
IN
= 5 V, C
= 1 μ F, C
IN
= 1 μ F,
OUT
Figure 2. Normal Power-On Showing Soft-Start, Figure 3. OVP at Power-On, VIN= 0V to 9V, tr= 50 μ s
Figure 4. bq24316 OVP Response for Input Step, VIN= 5V Figure 5. bq24316 OVP Response for Input Step, VIN= 5V
R
= 6.6 Ω
OUT
to 12V, tr= 1 μ s to 12V, tr= 20 μ s
6 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Figure 6. bq24314 OVP Response for Input Step, VIN= 5V Figure 7. bq24314 OVP Response for Input Step, VIN= 5V
to 12V, tr= 1 μ s to 12V, tr= 20 μ s
Product Folder Link(s): bq24314 bq24316
www.ti.com
V
IN
V
OUT
I
OUT
FAULT
V
IN
V
OUT
I
OUT
FAULT
V
IN
V
OUT
I
OUT
FAULT
V
IN
V
OUT
I
OUT
FAULT
V
OUT
V
VBAT
FAULT
V
VBAT
V
OUT
FAULT
Begin soft-stop
t
=220 s
DGL(BAT-OVP)
m
TYPICAL OPERATING PERFORMANCE (continued)
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
Figure 8. Recovery from OVP, VIN= 7.5V to 5V, tf= 400 μ s Figure 9. OCP, Powering Up into a Short Circuit on OUT
Pin, OCP Counter Counts to 15 Before Switching OFF the
Device
Figure 10. OCP, Zoom-in on the First Cycle of Figure 9 Figure 11. OCP, R
Current Limiting and Soft-Stop
Switches from 6.6 Ω to 3.3 Ω , Shows
OUT
Figure 12. BAT-OVP, V
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 7
Shows t
DGL(BAT-OVP)
Steps from 4.2V to 4.4V, Figure 13. BAT-OVP, V
VBAT
and Soft-Stop Shows BAT-OVP Counter
Product Folder Link(s): bq24314 bq24316
Cycles Between 4.1V and 4.4V,
VBAT
www.ti.com
2.4
2.45
2.5
2.55
2.6
2.65
2.7
2.75
-50 -30 -10 10 30 50 70 90 110 130
V Increasing
IN
V Decreasing
IN
Temperature- C°
V ,V -V
UVL
O HYS-UVLO
100
120
140
160
180
200
220
240
260
280
0 50 100 150
V =4V
IN
V
DO
@1A -mV
Temperature- C°
V =5V
IN
6.7
6.72
6.74
6.76
6.78
6.8
6.82
-50 -30 -10 10 30 50 70 90 110 130
V Increasing
IN
V Decreasing
IN
V ,V -V
OVP HYS-OVP
Temperature- C°
5.78
5.8
5.82
5.84
5.86
5.88
-50 -30 -10 10 30 50 70 90
110
130
V Increasing
IN
V Decreasing
IN
Temperature- C°
V ,V -V
OVP HYS-O
VP
0
200
400
600
800
1000
1200
1400
1600
0 10 20 30 40 50 60 70 80 90 100
I -mA
OCP
R -k
ILIM
W
975
976
977
978
979
980
981
982
983
984
985
-50 -30 -10 10 30 50 70 90 110 130
I -mA
OCP
Temperature- C°
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
TYPICAL OPERATING PERFORMANCE (continued)
UNDERVOLTAGE LOCKOUT DROPOUT VOLTAGE (IN to OUT)
vs vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 14. Figure 15.
OVERVOLTAGE THRESHOLD PROTECTION (bq24316) OVERVOLTAGE THRESHOLD PROTECTION (bq24314)
vs vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 16. Figure 17.
INPUT OVERCURRENT PROTECTION INPUT OVERCURRENT PROTECTION
vs vs
ILIM RESISTANCE FREE-AIR TEMPERATURE
8 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Figure 18. Figure 19.
Product Folder Link(s): bq24314 bq24316
www.ti.com
4.05
4.1
4.15
4.2
4.25
4.3
4.35
4.4
-50 -30 -10 10 30 50 70 90 110 130
BV (V Increasing)
OVP VBAT
Bat-OVP Recovery(V Decreasing)
VBAT
BV
-V
OVP
Temperature- C°
0
0.5
1
1.5
2
2.5
-50 -30 -10 10 30 50 70 90 110 130
Temperature- C°
I
-nA
VBAT
0
100
200
300
400
500
600
700
800
900
0 5 10 15 20 25 30 35
I ( =Low)
DD
CE
I ( =High)
STDBY
CE
I ,I - A
DD
STDBY
m
V -V
IN
TYPICAL OPERATING PERFORMANCE (continued)
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
BATTERY OVERVOLTAGE PROTECTION LEAKAGE CURRENT (VBAT Pin)
vs vs
FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 20. Figure 21.
SUPPLY CURRENT (bq24314)
vs
INPUT VOLTAGE
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 9
Figure 22.
Product Folder Link(s): bq24314 bq24316
www.ti.com
AC Adapter
VDC
GND
C
IN
1
7
2
5
4
6
8
bq24316DSG
bq24080
ChargerIC
SYSTEM
IN
OUT
VBAT
FAULT
CE
VSS
ILIM
C
OUTCOUT
R
BAT
R
CE
Host
Controller
R
FAULT
V
PU
R
PU
1 Fm1 Fm
100kW
47kW
47kW
47kW
R
ILM
25kW
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007

TYPICAL APPLICATION CIRCUIT

V
OVP
= 6.8V, I
OCP
= 1000mA, BV
= 4.35V (Terminal numbers shown are for the 2 × 2 DSG package)
OVP
Figure 23.

DETAILED FUNCTIONAL DESCRIPTION

The bq24314 and bq24316 are highly integrated circuits designed to provide protection to Li-ion batteries from failures of the charging circuit. The IC continuously monitors the input voltage, the input current and the battery voltage. In case of an input overvoltage condition, the IC immediately removes power from the charging circuit by turning off an internal switch. In the case of an overcurrent condition, it limits the system current at the threshold value, and if the overcurrent persists, switches the pass element OFF after a blanking period. If the battery voltage rises to an unsafe level, the IC disconnects power from the charging circuit until the battery voltage returns to an acceptable value. Additionally, the IC also monitors its own die temperature and switches off if it becomes too hot. The input overcurrent threshold is user-programmable. The IC can be controlled by a processor, and also provides status information about fault conditions to the host.

POWER DOWN

The device remains in power down mode when the input voltage at the IN pin is below the undervoltage threshold V Hi-Z.

POWER-ON RESET

The device resets when the input voltage at the IN pin exceeds the UVLO threshold. All internal counters and other circuit blocks are reset. The IC then waits for duration t t
DGL(PGOOD)
to control the inrush current. The soft-start minimizes the ringing at the input (the ringing occurs because the parasitic inductance of the adapter cable and the input bypass capacitor form a resonant circuit). Figure 2 shows the power-up behavior of the device. Because of the deglitch time at power-on, if the input voltage rises rapidly to beyond the OVP threshold, the device will not switch on at all, instead it will go into protection mode and indicate a fault on the FAULT pin, as shown in Figure 3 .
10 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
. The FET Q1 connected between IN and OUT pins is off, and the status output, FAULT, is set to
UVLO
, the input voltage and battery voltage are safe, FET Q1 is turned ON. The IC has a soft-start feature
Product Folder Link(s): bq24314 bq24316
DGL(PGOOD)
for the input voltage to stabilize. If, after
www.ti.com
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007

OPERATION

The device continuously monitors the input voltage, the input current, and the battery voltage as described in detail in the following sections.

Input Overvoltage Protection

If the input voltage rises above V shown in Figure 4 to Figure 7 , the response is very rapid, with the FET turning off in less than a microsecond. The FAULT pin is driven low. When the input voltage returns below V FET Q1 is turned on again after a deglitch time of t shows the recovery from input OVP.

Input Overcurrent Protection

The overcurrent threshold is programmed by a resistor R shows the OCP threshold as a function of R I
= 25 ÷ R
OCP
(current in A, resistance in k Ω )
ILIM
If the load current tries to exceed the I t
BLANK(OCP)
. If the load current returns to less than I operate. However, if the overcurrent situation persists for t t
REC(OCP)
, and the FAULT pin is driven low. The FET is then turned on again after t monitored all over again. Each time an OCP fault occurs, an internal counter is incremented. If 15 OCP faults occur in one charge cycle, the FET is turned off permanently. The counter is cleared either by removing and re-applying input power, or by disabling and re-enabling the device with the CE pin. Figure 9 to Figure 11 show what happens in an overcurrent fault.
To prevent the input voltage from spiking up due to the inductance of the input cable, Q1 is turned off slowly, resulting in a “ soft-stop ” , as shown in Figure 11 .
, the internal FET Q1 is turned off, removing power from the circuit. As
OVP
– V
ON(OVP)
ILIM
threshold, the device limits the current for a blanking duration of
OCP
to ensure that the input supply has stabilized. Figure 8
ILIM
, and may be approximated by the following equation:
before t
OCP
BLANK(OCP)
OVP
connected from the ILIM pin to VSS. Figure 18
BLANK(OCP)
, the FET Q1 is turned off for a duration of
HYS-OVP
times out, the device continues to
(but is still above V
REC(OCP)
and the current is
UVLO
), the

Battery Overvoltage Protection

The battery overvoltage threshold BV
is internally set to 4.35V. If the battery voltage exceeds the BV
OVP
threshold, the FET Q1 is turned off, and the FAULT pin is driven low. The FET is turned back on once the battery voltage drops to BV
– V
OVP
HYS-BOVP
(see Figure 12 and Figure 13 ). Each time a battery overvoltage fault occurs, an internal counter is incremented. If 15 such faults occur in one charge cycle, the FET is turned off permanently. The counter is cleared either by removing and re-applying input power, or by disabling and re-enabling the device with the CE pin. In the case of a battery overvoltage fault, Q1 is switched OFF gradually (see Figure 12 ).

Thermal Protection

If the junction temperature of the device exceeds T low. The FET is turned back on when the junction temperature falls below T
, the FET Q1 is turned off, and the FAULT pin is driven
J(OFF)
– T
J(OFF)
J(OFF-HYS)
.

Enable Function

The IC has an enable pin which can be used to enable or disable the device. When the CE pin is driven high, the internal FET is turned off. When the CE pin is low, the FET is turned on if other conditions are safe. The OCP counter and the Bat-OVP counter are both reset when the device is disabled and re-enabled. The CE pin has an internal pulldown resistor and can be left floating. Note that the FAULT pin functionality is also disabled when the CE pin is high.

Fault Indication

The FAULT pin is an active-low open-drain output. It is in a high-impedance state when operating conditions are safe, or when the device is disabled by setting CE high. With CE low, the FAULT pin goes low whenever any of these events occurs:
• Input overvoltage
• Input overcurrent
• Battery overvoltage
• IC Overtemperature
OVP
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): bq24314 bq24316
www.ti.com
V(IN)>V(UVLO)?
No
CE=Low?
No
V(IN)<V(OVP)?
Yes
No
TurnoffFET FAULT =Low
I<IOCP ?
Yes
No
Waitt
REC(OCP)
V
BAT
<BATOVP ?
Yes
No
TurnonFET FAULT =HiZ
TurnoffFET FAULT =Low IncrOCP counter
count<15?
CE=Hi?
No
No
GotoReset
Yes
TurnoffFET FAULT =Low IncrBAT counter
count<15?
CE=Hi?
GotoReset
Yes
No
No
Yes
Yes
No
TurnoffFET FAULT =Low
PowerDown
AllICfunctionsOFF
FAULT =HiZ
Reset
Timersreset
Countersreset
FAULT =HiZ
FET off
T < T ?
J J(OFF)
AnyState
ifV(IN)<V(UVLO),
gotoPowerDown
AnyState ifCE=Hi,
gotoReset
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
Figure 24. Flow Diagram
12 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): bq24314 bq24316
www.ti.com
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
APPLICATION INFORMATION (WITH REFERENCE TO FIGURE 23 )
bq24314 bq24316
Selection of R
BAT
It is strongly recommended that the battery not be tied directly to the VBAT pin of the device, as under some failure modes of the IC, the voltage at the IN pin may appear on the VBAT pin. This voltage can be as high as 30V, and applying 30V to the battery in case of the failure of the bq2431x can be hazardous. Connecting the VBAT pin through R interests of safety, R across this resistor because of the VBAT bias current I over and above the tolerance on the nominal 4.35V BV
Choosing R
in the range 100k Ω to 470k Ω is a good compromise. In the case of an IC failure, with R
BAT
prevents a large current from flowing into the battery in case of a failure of the IC. In the
BAT
should have a very high value. The problem with a large R
BAT
causes an error in the BV
VBAT
threshold.
OVP
is that the voltage drop
BAT
threshold. This error is
OVP
equal
BAT
to 100k Ω , the maximum current flowing into the battery would be (30V – 3V) ÷ 100k Ω = 246 μ A, which is low enough to be absorbed by the bias currents of the system components. R worst-case voltage drop of R on BV
threshold.
OVP
× I
BAT
= 1mV. This is negligible to compared to the internal tolerance of 50mV
VBAT
equal to 100k Ω would result in a
BAT
If the Bat-OVP function is not required, the VBAT pin should be connected to VSS.
Selection of R
, R
CE
, and R
FAULT
PU
The CE pin can be used to enable and disable the IC. If host control is not required, the CE pin can be tied to ground or left un-connected, permanently enabling the device.
In applications where external control is required, the CE pin can be controlled by a host processor. As in the case of the VBAT pin (see above), the CE pin should be connected to the host GPIO pin through as large a resistor as possible. The limitation on the resistor value is that the minimum V drop across the resistor should be greater than V by R
× IIH.
CE
of the bq2431 × CE pin. The drop across the resistor is given
IH
of the host GPIO pin less the
OH
The FAULT pin is an open-drain output that goes low during OV, OC, battery-OV, and OT events. If the application does not require monitoring of the FAULT pin, it can be left unconnected. But if the FAULT pin has to be monitored, it should be pulled high externally through R
, and connected to the host through R
PU
. R
FAULT
FAULT
prevents damage to the host controller if the bq2431x fails (see above). The resistors should be of high value, in practice values between 22k Ω and 100k Ω should be sufficient.

Selection of Input and Output Bypass Capacitors

The input capacitor C step change downwards in the system load current, the inductance of the input cable causes the input voltage to spike up. C
prevents the input voltage from overshooting to dangerous levels. It is strongly recommended that a
IN
ceramic capacitor of at least 1 μ F be used at the input of the device. It should be located in close proximity to the IN pin.
C
in Figure 23 is also important: If a very fast (< 1 μ s rise time) overvoltage transient occurs at the input, the
OUT
current that charges C This results in improved performance for input overvoltage protection. C at least 1 μ F, located close to the OUT pin. C circuit downstream of the protection IC.
in Figure 23 is for decoupling, and serves an important purpose. Whenever there is a
IN
causes the device ’ s current-limiting loop to kick in, reducing the gate-drive to FET Q1.
OUT
also serves as the input decoupling capacitor for the charging
OUT
should also be a ceramic capacitor of
OUT

Powering Accessories

In some applications, the equipment that the protection IC resides in may be required to provide power to an accessory (e.g. a cellphone may power a headset or an external memory card) through the same connector pins that are used by the adapter for charging. Figure 25 and Figure 26 illustrate typical charging and accessory-powering scenarios:
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): bq24314 bq24316
www.ti.com
bq24316
IN
OUT
Charger
Accessory
powersupply
EN
DIS
Battery pack
torestof system
e.g. cellphone
AC Adapter
bq24316
IN
OUT
Charger
Accessory
powersupply
EN
DIS
Battery pack
torestof system
e.g. cellphone
IN
OUT
ChargePump, Bandgap, BiasGen
Q1
V
OUT
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
Figure 25. Charging - The Red Arrows Show the Direction of Current Flow
Figure 26. Powering an Accessory - The Red Arrows Show the Direction of Current Flow
In the second case, when power is being delivered to an accessory, the bq24314/bq24316 device is required to support current flow from the OUT pin to the IN pin.
If V Q1. Q1 will then remain ON as long as V
> V
OUT
+ 0.7V, FET Q1 is turned on, and the reverse current does not flow through the diode but through
UVLO
> V
OUT
– V
UVLO
HYS-UVLO
+ R
ON*I
DS
ACCESSORY
. Within this voltage range, the reverse current capability is the same as the forward capability, 1.5A. It should be noted that there is no overcurrent protection in this direction.
Figure 27.
14 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): bq24314 bq24316
www.ti.com
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
PCB Layout Guidelines:
• This device is a protection device, and is meant to protect down-stream circuitry from hazardous voltages.
Potentially, high voltages may be applied to this IC. It has to be ensured that the edge-to-edge clearances of PCB traces satisfy the design rules for high voltages.
• The device uses SON packages with a PowerPAD™. For good thermal performance, the PowerPAD should
be thermally coupled with the PCB ground plane. In most applications, this will require a copper pad directly under the IC. This copper pad should be connected to the ground plane with an array of thermal vias.
• C
and C
IN
close to the IC.
should be located close to the IC. Other components like R
OUT
and R
ILIM
BAT
should also be located
bq24314 bq24316
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): bq24314 bq24316
www.ti.com
bq24314 bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
Revision History
Changes from Revision B (September 2007) to Revision C .......................................................................................... Page
• Changed bq24314DSJ marking from preview to CBX .......................................................................................................... 2
• Changed bq24316DSJ marking from preview to BZC ........................................................................................................... 2
16 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): bq24314 bq24316
PACKAGE OPTION ADDENDUM
www.ti.com
PACKAGING INFORMATION
Orderable Device Status
BQ24314DSGR ACTIVE WSON DSG 8 3000 Green (RoHS
BQ24314DSGRG4 ACTIVE WSON DSG 8 3000 Green (RoHS
BQ24314DSGT ACTIVE WSON DSG 8 250 Green (RoHS
BQ24314DSGTG4 ACTIVE WSON DSG 8 250 Green (RoHS
BQ24314DSJR ACTIVE VSON DSJ 12 3000 Green (RoHS
BQ24314DSJRG4 ACTIVE VSON DSJ 12 3000 Green (RoHS
BQ24314DSJT ACTIVE VSON DSJ 12 250 Green (RoHS
BQ24314DSJTG4 ACTIVE VSON DSJ 12 250 Green (RoHS
BQ24316DSGR ACTIVE WSON DSG 8 3000 Green (RoHS
BQ24316DSGRG4 ACTIVE WSON DSG 8 3000 Green (RoHS
BQ24316DSGT ACTIVE WSON DSG 8 250 Green (RoHS
BQ24316DSGTG4 ACTIVE WSON DSG 8 250 Green (RoHS
BQ24316DSJR ACTIVE VSON DSJ 12 3000 Green (RoHS
BQ24316DSJRG4 ACTIVE VSON DSJ 12 3000 Green (RoHS
BQ24316DSJT ACTIVE VSON DSJ 12 250 Green (RoHS
BQ24316DSJTG4 ACTIVE VSON DSJ 12 250 Green (RoHS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBV
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBV
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBV
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBV
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBX
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBX
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBX
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBX
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBW
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBW
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBW
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CBW
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC
11-Apr-2013
Samples
(4)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
11-Apr-2013
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Jan-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
BQ24314DSGR WSON DSG 8 3000 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2
BQ24314DSGT WSON DSG 8 250 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2
BQ24314DSJR VSON DSJ 12 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q1 BQ24314DSJT VSON DSJ 12 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q1
BQ24316DSGR WSON DSG 8 3000 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2
BQ24316DSGT WSON DSG 8 250 179.0 8.4 2.2 2.2 1.2 4.0 8.0 Q2
BQ24316DSJR VSON DSJ 12 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q1 BQ24316DSJT VSON DSJ 12 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q1
Type
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Jan-2013
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ24314DSGR WSON DSG 8 3000 195.0 200.0 45.0 BQ24314DSGT WSON DSG 8 250 195.0 200.0 45.0
BQ24314DSJR VSON DSJ 12 3000 367.0 367.0 35.0
BQ24314DSJT VSON DSJ 12 250 210.0 185.0 35.0 BQ24316DSGR WSON DSG 8 3000 195.0 200.0 45.0 BQ24316DSGT WSON DSG 8 250 195.0 200.0 45.0
BQ24316DSJR VSON DSJ 12 3000 367.0 367.0 35.0
BQ24316DSJT VSON DSJ 12 250 210.0 185.0 35.0
Pack Materials-Page 2
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