Texas Instruments 5962-9584001QPA, 5962-9584001Q2A, 5962-9583901QPA, 5962-9583901Q2A Datasheet
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUAR Y 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Very Low Dropout Voltage, Less Than 0.6 V
at 750 mA
D
Low Quiescent Current
D
TTL- and CMOS-Compatible Enable on
TL751M Series
D
60-V Load-Dump Protection
D
Overvoltage Protection
D
Internal Thermal Overload Protection
D
Internal Overcurrent-Limiting Circuitry
description
The TL750M and TL751M series are low-dropout positive voltage regulators specifically designed for
battery-powered systems. The TL750M and TL751M series incorporate onboard overvoltage and
current-limiting protection circuitry to protect the devices and the regulated system. Both series are fully
protected against 60-V load-dump and reverse-battery conditions. Extremely low quiescent current, even
during full-load conditions, makes the TL750M and TL751M series ideal for standby power systems.
The TL750M and TL751M series offers 5-V, 8-V , 10-V, and 12-V options. The TL751M series has the addition
of an enable (ENABLE) input. The ENABLE input gives the designer complete control over power up, allowing
sequential power up or emergency shutdown. When ENABLE
is high, the regulator output is placed in the
high-impedance state. The ENABLE input is TTL- and CMOS-compatible.
The TL750MxxC and TL751MxxC are characterized for operation over the virtual junction temperature range
0°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
J
V
O
TYP
(V)
HEAT-SINK
MOUNTED
(3-PIN)
(KC)
PLASTIC
FLANGE MOUNT
(KTE)
PLASTIC
FLANGE MOUNT
(KTG)
PLASTIC
FLANGE MOUNT
(KTP)
CHIP
FORM
(Y)
5 TL750M05CKC TL750M05CKTE TL751M05CKTG TL750M05CKTPR TL750M05Y
°
°
8 TL750M08CKC TL750M08CKTE TL751M08CKTG TL750M08CKTPR TL750M08Y
0°C to 125°C
10 TL750M10CKC TL750M10CKTE TL751M10CKTG TL750M10CKTPR TL750M10Y
12 TL750M12CKC TL750M12CKTE TL751M12CKTG TL750M12CKTPR TL750M12Y
The KTE and KTG packages are available taped and reeled. The KTP is only available taped and reeled. Add the suffix R to device
type (e.g., TL750M05CKTER). Chip forms are tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUAR Y 2000
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TL750M ...KC PACKAGE
†
(TOP VIEW)
TO-220AB
O
C
I
OUTPUT
COMMON
INPUT
TL750M . . . KTE PACKAGE
†
(TOP VIEW)
OUTPUT
COMMON
INPUT
O
C
I
TL750M . . . KTP PACKAGE
†
(TOP VIEW)
OUTPUT
COMMON
INPUT
COMMON
O
C
I
TL751M . . . KTG PACKAGE
†
(TOP VIEW)
NC
OUTPUT
COMMON
INPUT
ENABLE
O
C
I
N
E
†
The common terminal is in electrical contact with the mounting base.
NC – No internal connection
TL751Mxx functional block diagram
DEVICE
COMPONENT
COUNT
Transistors 46
Diodes 14
Resistors 44
Capacitors 4
JFETs 1
Tunnels
(emitter R)
2
Enable
Bandgap
Current
Limiting
_
+
Overvoltage/
Thermal
Shutdown
ENABLE
OUTPUT
COMMON
INPUT
28 V
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUAR Y 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over virtual junction temperature range (unless otherwise noted)
†
Continuous input voltage 26 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient input voltage (see Figure 3) 60 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous reverse input voltage –15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transient reverse input voltage: t = 100 ms –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance, θ
JA
(see Notes 1 and 2): KC package 22°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
KTE package 23°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
KTG package 23°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
KTP package 28°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
Virtual junction temperature range, T
J
0°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Maximum power dissipation is a function of TJ(max),
θ
JA
, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) – TA)/
θ
JA
. Operating at the absolute maximum TJ of 150°C can impact reliability. Due to
variation in individual device electrical characteristics and thermal resistance, the built-in thermal overload protection may be
activated at power levels slightly above or below the rated dissipation.
2. The package thermal impedance is calculated in accordance with JESD 51.
recommended operating conditions
MIN MAX UNIT
TL75xM05 6 26
p
TL75xM08 9 26
Input voltage range, V
I
TL75xM10 11 26
V
TL75xM12 13 26
High-level ENABLE input voltage, V
IH
TL751Mxx 2 15 V
Low-level ENABLE input voltage, V
IL
TL751Mxx 0 0.8 V
Output current range, I
O
TL75xMxxC 750 mA
Operating virtual junction temperature range, T
J
TL75xMxxC 0 125 °C
electrical characteristics, V
I
= 14 V, I
O
= 300 mA, TJ = 25°C
TL751MXXX
PARAMETER
MIN TYP MAX
UNIT
Response time, ENABLE to output
50 µs
TL750M, TL751M SERIES
LOW-DROPOUT VOLTAGE REGULATORS
SLVS021H – JANUARY 1988 – REVISED JANUAR Y 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V
I
= 14 V, IO = 300 mA, ENABLE at 0 V for TL751M05, TJ = 25°C (unless
otherwise noted) (see Note 3)
PARAMETER TEST CONDITIONS
TL750M05C
TL751M05C
UNIT
MIN TYP MAX
p
4.95 5 5.05
Output voltage
TJ = 0°C to 125°C 4.9 5.1
V
p
VI = 9 V to 16 V, IO = 250 mA 10 25
Input voltage regulation
VI = 6 V to 26 V, IO = 250 mA 12 50
mV
Ripple rejection VI = 8 V to 18 V, f = 120 Hz 50 55 dB
Output voltage regulation IO = 5 mA to 750 mA 20 50 mV
p
IO = 500 mA 0.5
Dropout voltage
IO = 750 mA 0.6
V
Output noise voltage f = 10 Hz to 100 kHz 500 µV
IO = 750 mA 60 75
Bias current
IO = 10 mA 5
mA
Bias current (TL751M05C and TL751M05Q only) ENABLE VIH ≥ 2 V 200 µA
NOTE 3: Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately . All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 3.
electrical characteristics, VI = 14 V, IO = 300 mA, ENABLE at 0 V for TL751M08, TJ = 25°C (unless
otherwise noted) (see Note 3)
PARAMETER TEST CONDITIONS
TL750M08C
TL751M08C
UNIT
MIN TYP MAX
p
7.92 8 8.08
Output voltage
TJ = 0°C to 125°C 7.84 8.16
V
p
VI = 10 V to 17 V, IO = 250 mA 12 40
Input voltage regulation
VI = 9 V to 26 V, IO = 250 mA 15 68
mV
Ripple rejection VI = 11 V to 21 V, f = 120 Hz 50 55 dB
Output voltage regulation IO = 5 mA to 750 mA 24 80 mV
p
IO = 500 mA 0.5
Dropout voltage
IO = 750 mA 0.6
V
Output noise voltage f = 10 Hz to 100 kHz 500 µV
IO = 750 mA 60 75
Bias current
IO = 10 mA 5
mA
Bias current (TL751Mxx only)
ENABLE VIH ≥ 2 V
200 µA
NOTE 3: Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately . All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 3.
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