TEMIC TFDS3000 Datasheet

TFDS3000
Integrated Infrared Transceiver Module IrDA (SIR)

Description

The TFDS3000 is an infrared transceiver for data commu­nication systems. The transceiver is compatible to the IrDA standard which allows data rates up to 115 kB/s.

Features

D
Compatible to IrDA standard
D
SMD side view
D
Low profile (height = 5.6 mm max.)
D
Microcomputer compatible
An internal AGC (Automatic Gain Control) ensures proper operation under EMI conditions.
D
No external components
D
Low power consumption
D
Wide supply voltage range (3 to 5.5 V)
D
AGC for EMI immunity
Pin description: 1: IRED cathode
2: Rxd (output) 3: V 4: Ground 5: NC 6: **) 7: Txd (input) 8: IRED anode Guide pins internally connected to ground
(supply voltage)
CC
*)
SD
Txd
*) optional sensitivity control for OEMs only **) shut-down, not for new development
V
cc
3
Driver
ComparatorAmplifier
6
7
Control
logic
Driver
4
GND
Figure 1. Block diagram
95 11227
2
Rxd
8
1
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
1 (10)
Preliminary Information
TFDS3000

Absolute Maximum Ratings

Reference point Pin 4, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Supply voltage range V
CC
Input currents All pins, exept 8:see IRED 10 mA Output sinking current 25 mA Power dissipation See figure 3 P Junction temperature T Ambient temperature range
T
tot
j
amb
(operating) Storage temperature range T
stg
Soldering temperature See figure 11 introductory text
IrDA Design Guide Average IRED current I Repetitive pulsed IRED current < 90 ms, ton < 20% I Peak IRED current < 2 ms, ton < 10% I IRED anode voltage V Transmitter data input voltage V Receiver data output voltage V
(DC) 100 mA
IRED
(RP) 500 mA
IRED
(PK) 1 A
IRED
IREDA
Txd Rxd
–0.5 to 6 V
200 mW 125 °C
0 to70 °C
–25 to +85 °C
230 (typ. 215)
–0.5 to V –0.5 to V –0.5 to V
+0.5 V
CC
+0.5 V
CC
+0.5 V
CC
_
C

Basic Characteristics

T
= 25_C, VCC = 5 V, unless otherwise specified
amb
Parameter Test Conditions Symbol Min. Typ. Max. Unit
T ransceiver
Supported data rates 2.4 115.2 kBit/s Supply voltage range
reduced function down to 2.6 V
Supply current I
Receiver
Min. detection threshold irradiance
**)
Max. detection threshold irradiance
**)
a
= "15° E
a
= "90° E
Logic low receiver input irradiance
Max. DC irradiance
a
= "90° E
Output voltage Rxd Active,
C = 15 pF, R = 2.2 k
W
Output voltage Rxd Non-active,
C = 15 pF, R = 2.2 k
W
Output current VOL < 0.5 V
C = 15 pF, R = 2.2 k Rise and fall time C = 15 pF, R = 2.2 k Rxd signal, electrical
2.4 kB/s 1 20
W W
output pulse width Rxd signal, electrical
115.2 kB/s 1 8
output pulse width
**) BER = 10–8 is target of IrDA specification, defined sensitivities not related to BER = 10
V
emin
emax
E
emaxlow
edcmax
V
V
OH
tr, t
CC
S
3 5 5.5 V
1.3 2.5 mA
0.025 0.035 W/m
3300 5000 W/m
400 W/m
OL
0.5 0.8 V
VCC–0.5 V
4 mA
f
20 200 ns
–8
0.004 W/m
m
m
2
2
2
2
s
s
2 (10)
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
Preliminary Information
TFDS3000
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Output delay time (Rxd)
Max. delay of leading edge of output signal related to leading edge of optical input signal
Jitter, leading edge of output signal
Output delay time (Rxd)
Max. delay of trailing edge of output signal related to trailing edge of optical input signal
Latency Recovery from last
Transmitter
Supply voltage
switching specs only cover 4.5 to 5.5 V
Driver Current IRED
I
can be adjusted by
d
variation of R
S
Logic low transmitter input voltage
Logic high transmitter input voltage
Output radiant intensity
= "15°
Angle of half intensity Peak wavelength of
emission Halfwidth of emission
spectrum Optical rise / fall time 115.2 kHz square wave
Output radiant intensity Logic LOW level 0.4 Overshoot, optical 25 % Rising edge peak-to-peak
jitter
Output level = 0.5 V
@ Ee = 0.040 W/m
CC
2
Over a period of 10 bit,
115.2 kB/s Output level = 0.5 V
CC
transmitted pulse to
1.1 threshold sensitivity
Current limiting resistor in series to IRED: R
= 10
S
5 V
Max. input current I
< 100 A
in
Current limiting resistor in series to IRED: R V
= 5 V
CC
= 10 ,
S
signal (1:1)
Over a period of 10 bits, independent of information content
1 2
2
6.5
t
L
V
CC
I
d
3 5.5 V
100 800
0.3 0.5 A
VIL(Txd) 0 0.8 V
VIH(Txd) 2.4 V
CC
40 60 200 mW/sr
p
850 870 900 nm
"
24 °
60 nm
200 600 ns
W/sr
t
j
0.2
s
s
s
s
V
s
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
3 (10)
Preliminary Information
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