TFDS3000
Integrated Infrared Transceiver Module IrDA (SIR)
Description
The TFDS3000 is an infrared transceiver for data communication systems. The transceiver is compatible to the
IrDA standard which allows data rates up to 115 kB/s.
Features
D
Compatible to IrDA standard
D
SMD side view
D
Low profile (height = 5.6 mm max.)
D
Microcomputer compatible
An internal AGC (Automatic Gain Control) ensures
proper operation under EMI conditions.
D
No external components
D
Low power consumption
D
Wide supply voltage range (3 to 5.5 V)
D
AGC for EMI immunity
Pin description:
1: IRED cathode
2: Rxd (output)
3: V
4: Ground
5: NC
6: **)
7: Txd (input)
8: IRED anode
Guide pins internally connected to ground
(supply voltage)
CC
*)
SD
Txd
*) optional sensitivity control for OEMs only
**) shut-down, not for new development
V
cc
3
Driver
ComparatorAmplifier
6
7
Control
logic
Driver
4
GND
Figure 1. Block diagram
95 11227
2
Rxd
8
1
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
1 (10)
Preliminary Information
TFDS3000
Absolute Maximum Ratings
Reference point Pin 4, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Supply voltage range V
CC
Input currents All pins, exept 8:see IRED 10 mA
Output sinking current 25 mA
Power dissipation See figure 3 P
Junction temperature T
Ambient temperature range
T
tot
j
amb
(operating)
Storage temperature range T
stg
Soldering temperature See figure 11 introductory text
IrDA Design Guide
Average IRED current I
Repetitive pulsed IRED current < 90 ms, ton < 20% I
Peak IRED current < 2 ms, ton < 10% I
IRED anode voltage V
Transmitter data input voltage V
Receiver data output voltage V
(DC) 100 mA
IRED
(RP) 500 mA
IRED
(PK) 1 A
IRED
IREDA
Txd
Rxd
–0.5 to 6 V
200 mW
125 °C
0 to70 °C
–25 to +85 °C
230 (typ. 215)
–0.5 to V
–0.5 to V
–0.5 to V
+0.5 V
CC
+0.5 V
CC
+0.5 V
CC
_
C
Basic Characteristics
T
= 25_C, VCC = 5 V, unless otherwise specified
amb
Parameter Test Conditions Symbol Min. Typ. Max. Unit
T ransceiver
Supported data rates 2.4 115.2 kBit/s
Supply voltage range
reduced function down
to 2.6 V
Supply current I
Receiver
Min. detection threshold
irradiance
**)
Max. detection threshold
irradiance
**)
a
= "15° E
a
= "90° E
Logic low receiver input
irradiance
Max. DC irradiance
a
= "90° E
Output voltage Rxd Active,
C = 15 pF, R = 2.2 k
W
Output voltage Rxd Non-active,
C = 15 pF, R = 2.2 k
W
Output current VOL < 0.5 V
C = 15 pF, R = 2.2 k
Rise and fall time C = 15 pF, R = 2.2 k
Rxd signal, electrical
2.4 kB/s 1 20
W
W
output pulse width
Rxd signal, electrical
115.2 kB/s 1 8
output pulse width
**) BER = 10–8 is target of IrDA specification, defined sensitivities not related to BER = 10
V
emin
emax
E
emaxlow
edcmax
V
V
OH
tr, t
CC
S
3 5 5.5 V
1.3 2.5 mA
0.025 0.035 W/m
3300 5000 W/m
400 W/m
OL
0.5 0.8 V
VCC–0.5 V
4 mA
f
20 200 ns
–8
0.004 W/m
m
m
2
2
2
2
s
s
2 (10)
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
Preliminary Information
TFDS3000
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Output delay time (Rxd)
Max. delay of leading
edge of output signal
related to leading edge
of optical input signal
Jitter, leading edge of
output signal
Output delay time (Rxd)
Max. delay of trailing
edge of output signal
related to trailing edge
of optical input signal
Latency Recovery from last
Transmitter
Supply voltage
switching specs only
cover 4.5 to 5.5 V
Driver Current IRED
I
can be adjusted by
d
variation of R
S
Logic low transmitter
input voltage
Logic high transmitter
input voltage
Output radiant intensity
= "15°
Angle of half intensity
Peak wavelength of
emission
Halfwidth of emission
spectrum
Optical rise / fall time 115.2 kHz square wave
Output radiant intensity Logic LOW level 0.4
Overshoot, optical 25 %
Rising edge peak-to-peak
jitter
Output level = 0.5 V
@ Ee = 0.040 W/m
CC
2
Over a period of 10 bit,
115.2 kB/s
Output level = 0.5 V
CC
transmitted pulse to
1.1 threshold sensitivity
Current limiting resistor in
series to IRED:
R
= 10
S
5 V
Max. input current
I
< 100 A
in
Current limiting resistor in
series to IRED: R
V
= 5 V
CC
= 10 ,
S
signal (1:1)
Over a period of 10 bits,
independent of information
content
1 2
2
6.5
t
L
V
CC
I
d
3 5.5 V
100 800
0.3 0.5 A
VIL(Txd) 0 0.8 V
VIH(Txd) 2.4 V
CC
40 60 200 mW/sr
p
850 870 900 nm
"
24 °
60 nm
200 600 ns
W/sr
t
j
0.2
s
s
s
s
V
s
TELEFUNKEN Semiconductors
Rev . A6, 15-Aug-96
3 (10)
Preliminary Information