Telefunken TCET4600G, TCET4600, TCET2600G, TCET2600, TCET1600 Datasheet

TCET1600 up to TCET4600

Vishay Telefunken

Rev. A4, 11–Jan–99 253

Optocoupler with Phototransistor Output

Description

The TCET1600/ TCET2600/ TCET4600 consists of
a phototransistor optically coupled to 2 gallium arse­nide infrared-emitting diodes in a 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications

Circuits for safe protective separation against
electrical shock according to safety class II

(reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Computer peripheral interface, microprocessor
system interface, telecom equipment.

VDE Standards

These couplers perform safety functions according
to the following equipment standards:

D

VDE 0884
Optocoupler for electrical safety requirements

D

IEC 950/EN 60950
Office machines (applied for reinforced
isolation for mains voltage ≤ 400 V

RMS

)

D

VDE 0804
Telecommunication apparatus and data
processing

D

IEC 65
Safety for mains-operated electronic and
related household apparatus

14925

Coll. Emitter

Anode Cath.

4 PIN

8 PIN

16 PIN

13947

C

Order Instruction

Ordering Code CTR Ranking Remarks

TCET1600/ TCET1600G

1)

>20% 4 Pin = Single channel
TCET2600 >20% 8 Pin = Dual channel
TCET4600 >20% 16 Pin = Quad channel

1)

G = Leadform 10.16 mm; G is not market on the body

TCET1600 up to TCET4600

Vishay Telefunken

Rev. A4, 11–Jan–99254

Features

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950,
Certificate number 11027

D

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection

D

CSA (C–UL) 1577recognized,
file number E-76222 – Double Protection

D

VDE 0884, Certificate number 115667

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)
V

IOTM

= 8 kV peak

D

Isolation test voltage
(partical discharge test voltage) V

pd

= 1.6 kV peak

D

Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

RMS

(848 V peak)

D

Rated recurring peak voltage (repetitive)
V

IORM

= 600 V

RMS

D

Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI ≥ 175

D

Thickness though insulation ≥ 0.75 mm

D

Internal creepage distance > 4 mm

General features:

D

Isolation materials according to UL94-VO

D

Pollution degree 2
(DIN/VDE 0110 /resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2600/ TCET4600 optional;
suffix letter ‘G’ is not marked on the optocoupler

D

Coupling System U

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit

Reverse voltage V

R

6 V

Forward current I

F

±60 mA

Forward surge current tp ≤ 10 ms I

FSM

±1.5 A

Power dissipation T

amb

≤ 25°C P

V

100 mW

Junction temperature T

j

125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit

Collector emitter voltage V

CEO

70 V

Emitter collector voltage V

ECO

7 V

Collector current I

C

50 mA

Collector peak current tp/T = 0.5, tp ≤ 10 ms I

CM

100 mA

Power dissipation T

amb

≤ 25°C P

V

150 mW

Junction temperature T

j

125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit

Isolation test voltage (RMS) t = 1 min V

IO

5 kV

Total power dissipation T

amb

≤ 25°C P

tot

250 mW

Operating ambient temperature range T

amb

–40 to +100

°

C

Storage temperature range T

stg

–55 to +125

°

C

Soldering temperature 2 mm from case t ≤ 10 s T

sd

260

°

C

TCET1600 up to TCET4600

Vishay Telefunken

Rev. A4, 11–Jan–99 255

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward voltage IF = ± 50 mA V

F

1.25 1.6 V

Junction capacitance VR = 0 V, f = 1 MHz C

j

50 pF

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter voltage IC = 100 mA V

CEO

70 V

Emitter collector voltage IE = 100 mA V

CEO

7 V

Collector dark current VCE = 20 V, If = 0, E = 0 I

CEO

100 nA

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter
saturation voltage

IF ± 10 mA, IC = 1 mA V

CEsat

0.3 V

Cut-off frequency VCE = 5 V, IF ± 10 mA,

R

L

= 100

W

f

c

100 kHz

Coupling capacitance f = 1 MHz C

k

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 5 V, IF = ± 5 mA TCET1600

up to
TCET4600

CTR 0.20 3.0