Telefunken TCET4100G, TCET4100, TCET2100G, TCET2100, TCET1109G Datasheet
...
TCET110.(G) up to TCET4100
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Document Number 83503
Rev. A6, 08–Sep–99
1 (11)
Optocoupler with Phototransistor Output
Description
The TCET110./ TCET2100/ TCET4100 consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead up to 16-lead plastic
dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced
isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
13929
C
TCET110.(G) up to TCET4100
Vishay Telefunken
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Document Number 83503
Rev. A6, 08–Sep–99
Order Instruction
Ordering Code CTR Ranking Remarks
TCET1100/ TCET1100G
1)
50 to 600% 4 Pin = Single channel
TCET1101/ TCET1101G
1)
40 to 80% 4 Pin = Single channel
TCET1102/ TCET1102G
1)
63 to 125% 4 Pin = Single channel
TCET1103/ TCET1103G
1)
100 to 200% 4 Pin = Single channel
TCET1104/ TCET1104G
1)
160 to 320% 4 Pin = Single channel
TCET1105/ TCET1105G
1)
50 to 150% 4 Pin = Single channel
TCET1106/ TCET1106G
1)
100 to 300% 4 Pin = Single channel
TCET1107/ TCET1107G
1)
80 to 160% 4 Pin = Single channel
TCET1108/ TCET1108G
1)
130 to 260% 4 Pin = Single channel
TCET1109/ TCET1109G
1)
200 to 400% 4 Pin = Single channel
TCET2100 50 to 600% 8 Pin = Dual channel
TCET4100 50 to 600% 16 Pin = Quad channel
1)
G = Leadform 10.16 mm; G is not marked on the body
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 11027
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
VDE 0884, Certificate number 115667
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according
to VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
D
Thickness through insulation ≥ 0.75 mm
D
Internal creepage distance > 4 mm
General features:
D
CTR offered in 9 groups
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2100/ TCET4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
D
Coupling System U
TCET110.(G) up to TCET4100
Vishay Telefunken
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Document Number 83503
Rev. A6, 08–Sep–99
3 (11)
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
R
6 V
Forward current I
F
60 mA
Forward surge current tp ≤ 10 ms I
FSM
1.5 A
Power dissipation T
amb
≤ 25°C P
V
100 mW
Junction temperature T
j
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 25°C P
V
150 mW
Junction temperature T
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
IO
5 kV
Total power dissipation T
amb
≤ 25°C P
tot
250 mW
Operating ambient temperature
range
T
amb
–40 to +100
°
C
Storage temperature range T
stg
–55 to +125
°
C
Soldering temperature 2 mm from case t ≤ 10 s T
sd
260
°
C
TCET110.(G) up to TCET4100
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Document Number 83503
Rev. A6, 08–Sep–99
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = ± 50 mA V
F
1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz C
j
50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
CEO
70 V
Emitter collector voltage IE = 100 mA V
ECO
7 V
Collector emitter cut-off
current
VCE = 20 V, If = 0, E = 0 I
CEO
10 100 nA
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
IF = 10 mA, IC = 1 mA V
CEsat
0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
R
L
= 100
W
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
Current Transfer Ratio (CTR)
Parameter T est Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 5 mA TCET1100(G)/
TCET2100/
TCET4100
CTR 0.50 6.0
IC/I
F
VCE = 5 V, IF = 10 mA TCET1101(G) CTR 0.40 0.8
C F
CE F
TCET1102(G) CTR 0.63 1.25
TCET1103(G) CTR 1.0 2.0
TCET1104(G) CTR 1.6 3.2
IC/I
F
VCE = 5 V, IF = 1 mA TCET1101(G) CTR 0.13 0.30
C F
CE F
TCET1102(G) CTR 0.22 0.45
TCET1103(G) CTR 0.34 0.70
TCET1104(G) CTR 0.56 0.90
IC/I
F
VCE = 5 V, IF = 5 mA TCET1105(G) CTR 0.5 1.5
C F
CE F
TCET1106(G) CTR 1.0 3.0
TCET1107(G) CTR 0.8 1.6
TCET1108(G) CTR 1.3 2.6
TCET1109(G) CTR 2.0 4.0
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