Taitron MMBD7000 Schematic [ru]

T

Dual Small Signal

Switching Diode

MMBD7000

Dual Small Signal Switching Diode

Features

• Silicon Epitaxial Planar Diode

• Fast Switching Dual Diode. Especially Suited for Automatic Insertion

• High Conductance

• Electrically Identical to Standard JEDEC

• RoHS Compliant

SOT-23

Mechanical Data

Case:

SOT-23, Plastic Case

Terminals:

Weight:

Maximum Ratings

Symbol Description MMBD7000 Unit Conditions

VRM

VRRM

Solderable per MIL-STD-202G, Method 208

Approx. 0.0088 gram

(T

Marking Code T3

Reverse Voltage 100 V

Peak Reverse Voltage 100 V

=25ºC unless noted otherwise)

Ambient

IF(AV)

IFSM

Forward Average Current 200 mA

Peak Forward Surge Current, Pulse Width=1s 500 mA

Power Dissipation on FR-5 Board

PD

Total Device Dissipation on Alumina Substrate

RthJA
RthJA

TJ

TS

Typical Thermal Resistance

Junction to Ambient Air

Maximum Junction Temperature

Storage Temperature Range

Note: 1) Device on alumina substrate

2) On FR-5 board

TAITRON COMPONEN

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060

Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415

S INCORPORATED www.taitroncomponents.com

225 mW TA=25° C

1.8 mW/° C Derate above 25° C

300 mW TA=25° C

2.4 mW/° C Derate above 25° C

417 ° C/W Note1

556 ° C/W Note2

150 ° C

-55 to +150 ° C

Rev. A/AH 2007-11-17

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Dual Small Signal Switching Diode

MMBD7000

Electrical Characteristics (T

Symbol Description Min. Max. Unit Conditions

VBR

IR

CD
Trr

Reverse Breakdown Voltage 100 - V

Leakage Current

Forward Voltage

Diode Capacitance - 1.5 pF

Reverse Recovery Time - 4.0 nS

=25ºC unless noted otherwise)

Ambient

- 1.0 VR=50V

- 3.0 VR=100V

- 100

0.55 0.70

0.67 0.82

0.75 1.10

µA

V

IR=100µA

V

R=50V, Tj=125° C

IF=1mA
IF=10mA VF
IF=100mA

VR=0V, f=1MHz

IF=10mA , IR=10mA,
Irr=1mA , RL=100Ω

Dimensions in inch (mm)

SOT-23

www.taitroncomponents.com

Rev. A/AH 2007-11-17

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