STMicroelectronics TPN3021 Technical data

®	TPN3021
Application Specific Discretes	TRIPOLAR OVERVOLTAGE PROTECTION
A.S.D.™	FOR NETWORK INTERFACES

FEATURES

■Triple crowbar protection

■Low capacitance

■Low holding current: IH = 30mA minimum

■Surge current: IPP = 200A, 2/10µs

IPP = 30A, 10/1000µs

MAIN APPLICATIONS

Dedicated to dataline protection, this device provides a tripolar protection function. It ensures the same protection capability with the same breakdown voltage in both common and differential modes.

DESCRIPTION

The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks.

BENEFITS

Trisil technology is not subject to ageing and provides a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SO8 package is JEDEC registered.

Trisils comply with the following standards GR-1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-2.

SO-8

SCHEMATIC DIAGRAM

Rx+ / Tx+
		1				8			NC
NC									NC
		2	7
NC		3							GND
								6
Rx- / Tx-
		4				5			NC

TM: ASD is a trademark of STMicroelectronics.

September 2001 - Ed : 3

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TPN3021

IN COMPLIANCES WITH THE FOLLOWING STANDARDS

						Minimum se-
	Standard	Peak surge	Voltage	Required peak	Current	rial resistor to
		voltage (V)	waveform	current (A)	waveform	meet standard
						( )
	GR-1089 Core	2500	2/10 µs	500	2/10 µs	7.5
	First level	1000	10/1000 µs	100	10/1000 µs	25
	GR-1089 Core	1500	2/10 µs	100	2/10 µs	0
	Intrabuilding
	ITU-T-K20/K21	1000	10/700 µs	25	5/310 µs	0
	ITU-T-K20	6000	1/60 ns	ESD contact discharge		-
	(IEC61000-4-2)	8000		ESD air discharge		-
	VDE0433	4000	10/700 µs	100	5/310 µs	40
		2000		50		0
	VDE0878	4000	1.2/50 µs	100	1/20 µs	0
		2000		50		0
	IEC61000-4-5	2000	10/700 µs	50	5/310 µs	0
		2000	1.2/50 µs	50	8/20 µs	0

ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol	Parameter		I
VRM	Stand-off voltage
			I
			PP
VBO	Breakover voltage
VBR	Breakdown voltage		IBO
IH	Holding current	IR	IH
IBO	Breakover current	IRM				V
IRM	Leakage current at VRM		V	V	V	V
			RM	R	BR	BO
IPP	Peak pulse current
C	Capacitance
VR	Continous reverse voltage
IR	Leakage current at VR

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			TPN3021
ABSOLUTE RATINGS (Tamb = 25 °C)
Symbol	Parameter		Value	Unit
Ipp	Peak pulse pulse current: tr / tp	10/1000 µs	30	A
		8/20 µs	100
		10/560 µs	40
		5/310 µs	50
		10/160 µs	75
		1/20 µs	100
		2/10 µs	200
ITSM	Non repetitive surge peak on-state current	50 Hz	8	A
	One cycle	60 Hz	9
	Non repetitive surge peak on-state current	0.2 s	3	A
	F = 50 Hz	2 s	1.5
Tstg	Storage temperature range		- 55 to + 150	°C
Tj	Maximum junction temperature		150	°C
TL	Maximum lead temperature for soldering during 10s		260	°C

Repetitive peak pulse current

% IPP

100

tr: rise time (µs)

tp: pulse duration time (µs)

50

ex: pulse waveform

10/1000 µs

tr = 10 µs

tp = 1000 µs

0

tp

t

tr

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

170

°C/W

ELECTRICAL PARAMETERS (Tamb = 25°C)

Type

IRM @ VRM

VBO max @ IBO

IH

C

max.

note 1

note 2

note 3

max

min.

typ.

µA

V

V

mA

mA

pF

TPN3021

4

28

38

300

30

16

Note 1 : See test circuit 1

Note 2 : See functional holding current test circuit 2

Note 3 : VR = 0V bias, VRMS = 1V, F = 1MHz

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