STMicroelectronics TPN3021 Technical data
®
TPN3021
Application Specific Discretes
TRIPOLAR OVERVOLTAGE PROTECTION
A.S.D.™
FEATURES
Triple crowbar protection
■
Low capacitance
■
Low holding current: IH= 30mA minimum
■
Surge current: IPP= 200A, 2/10µs
■
= 30A, 10/1000µs
I
PP
MAIN APPLICATIONS
Dedicated to dataline protection, this device provides a tripolar protection function. It ensures the
same protection capability with the same breakdown voltage in both common and differential
modes.
DESCRIPTION
The TPN3021 is a low capacitance transient
surge arrestor designed for protection of high
debit rate communication network. Its low capacitance avoids distorsion of the signal as it
has been designed for T1/E1 and Ethernet networks.
FOR NETWORK INTERFACES
SO-8
SCHEMATIC DIAGRAM
Rx+ / Tx+
1
8
NC
BENEFITS
Trisil technology is not subject to ageing and provides a fail safe mode in short circuit for a better
protection. They are used to help equipment to
meet main standards such as UL1950, IEC950 /
CSA C22.2 and UL1459. Theyhave UL94 V0 approved resin. SO8 package is JEDEC registered.
Trisils comply with the following standards
GR-1089 Core, ITU-T-K20/K21, VDE0433,
VDE0878, IEC61000-4-2.
TM: ASDisa trademark of STMicroelectronics.
NC
NC
Rx- / Tx-
NC
2
3
4
7
GND
6
NC
5
September 2001 - Ed : 3
1/6
TPN3021
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Standard
Peak surge
voltage (V)
Voltage
waveform
Required peak
current (A)
Current
waveform
Minimum se-
rial resistor to
meet standard
)
(
GR-1089 Core
First level
GR-1089 Core
2500
1000
1500 2/10 µs 100 2/10 µs 0
Intrabuilding
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
1000 10/700 µs 25 5/310 µs 0
6000
8000
4000
2000
4000
2000
2000
2000
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BO
V
BR
I
H
I
BO
I
RM
I
PP
C
Stand-off voltage
Breakover voltage
Breakdown voltage
Holding current
Breakover current
Leakage current at V
Peak pulse current
Capacitance
RM
2/10 µs
10/1000 µs
500
100
1/60 ns ESD contact discharge
ESD air discharge
10/700 µs 100
50
1.2/50 µs 100
50
amb
=25°C)
10/700 µs
1.2/50 µs
50
50
2/10 µs
10/1000 µs
5/310 µs 40
1/20 µs 0
5/310 µs
8/20 µs
I
I
PP
I
BO
I
I
H
R
I
RM
V
RM
7.5
25
-
-
0
0
0
0
V
V
V
BR
V
BO
R
2/6
V
R
I
R
Continous reverse voltage
Leakage current at V
R
TPN3021
ABSOLUTE RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
I
I
TSM
pp
Peak pulse pulse current: tr / tp
Non repetitive surge peak on-state current
One cycle
Non repetitive surge peak on-state current
F=50Hz
T
stg
Tj
T
L
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
Repetitive peak pulse current
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
50 Hz
60 Hz
0.2 s
%I
PP
100
2s
30
100
40
50
75
100
200
8
9
3
1.5
-55to+150
150
260 °C
tr: rise time (µs)
tp: pulse duration time (µs)
50
A
A
A
°C
°C
ex: pulse waveform
10/1000 µs tr = 10 µs tp = 1000 µs
0
t
t
p
r
t
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
ELECTRICAL PARAMETERS (T
Type IRM@V
max.
amb
RM
= 25°C)
V
max
max@I
BO
note 1
BO
note 2
170 °C/W
I
H
min.
note 3
typ.
µA V V mA mA pF
TPN3021 4 28 38 300 30 16
Note 1 : See test circuit 1
Note 2 : See functional holding current test circuit 2
Note 3 : VR= 0V bias, V
= 1V, F = 1MHz
RMS
C
3/6
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