Datasheet TPI12011N, TPI8011N Datasheet (SGS Thomson Microelectronics)

TPI8011N



ApplicationSpecific Discretes

A.S.D.

FEATURES

BIDIRECTIONALTRIPLE CROWBAR
PROTECTION.

PEAKPULSECURRENT:

I

=30A , 10/1000 µs.

PP

BREAKDOWN VOLTAGE:

TPI80xxN: 80V

TPI120xxN: 120V.
AVAILABLEIN SO8 PACKAGES.
LOWDYNAMICBREAKOVER VOLTAGE:

TPI80N: 150V
TPI120:200V

DESCRIPTION

Dedicateddevices forISDNinterfaceand high
speeddatatelecomline protection.Equivalentto
a triple TRISILwithlow capacitance.

Thesedevices provide:

low capacitance from lines to ground, allowing

-

high speed transmission without signal
attenuation.

- good capacitance balance between lines in

ordertoensurelongitudinalbalance.

- fixed breakdown voltage in both common and

differentialmodes.

- the same surge current capability in both

commonand differentialmodes.
A particular attention has been given to the

-

internalwirebonding.The”4-point”configuration
ensures a reliable protection, eliminating
overvoltages introduced by the parasitic
inductances of the wiring (Ldi/dt), especially for
veryfasttransientovervoltages.

TPI12011N

TRIPOLAR PROTECTION

FOR ISDN INTERFACES

SO8

SCHEMATIC DIAGRAM

Tip

GND

GND

Ring

1

2

3

4

8

Tip

GND

7

GND

6

5

Ring

COMPLIESWITHTHEFOLLOWINGSTANDARDS:

CCITTK17 -K20 10/700 µs 1.5 kV

5/310µs38A

VDE0433 10/700 µs2kV

5/310µs50A

VDE0878 1.2/50µs 1.5 kV

1/20 µs40A

CNET 0.5/700µs 1.5 kV

0.2/310µs38A

TM: ASD is atrademark of SGS-THOMSONMicroelectronics.

November 1999 Ed : 3A

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TPI8011N/TPI12011N

ABSOLUTE MAXIMUM RATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

I

I

TSM

PP

Peak pulsecurrent (seenote 1)

Non repetitivesurge peak on-state
current (F = 50 Hz).

T

stg

T

j

T

L Maximumleadtemperaturefor solderingduring10s

Note 1 :

Storagetemperaturerange
Maximumjunctiontemperature

Pulse waveform :
10/1000µst
5/310µst
2/10µst

%I

PP

100

=10µst

r

=5µst

r

=2µst

r

=1000µs

p

=310µs

p

=10µs

p

10/1000µs

5/320µs

2/10 µs

tp= 10ms

t=1s

30
40
90

8

3.5

- 55 to + 150
150

260 °C

A

A

°C

50

0

t

t

rp

t

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-a) Junctionto ambient

SO8 170

°

C/W

2/7

TPI8011N/TPI12011N

ELECTRICALCHARACTERISTICS

Symbol Parameter

V

RM Stand-offvoltage

I

RM Leakagecurrent

V

BR

V

BO

I

H

I

BO Breakovercurrent

I

PP Peakpulsecurrent

V

F ForwardVoltageDrop

C

Types

Breakdownvoltage
Breakovervoltage
Holdingcurrent

Capacitance

@V

I

RM

RM

max. min. max. typ. max. min.

µAV VmAV VmAmA
TPI8011N
TPI12011N

10 70 80 1 120 150 800 150

10 105 120 1 180 200 800 150

(

Tamb

=25°C)

VBR@I

R

V

BO

VBO
dyn.

I

BO

I

H

note1 note2 note1 note3

Note 1: Seethe reference testcircuit 1.
Note 2: Surgetest according toCCITT 1.5kV,10/700 µs betweenTip or Ringand ground.
Note 3: Seefunctional holding currenttest circuit2.

CAPACITANCES CHARACTERISTICS

LINE A

LINE A

TPIxx

LINE B

CONFIGURATION

=1V

V

A

=56V

V

B

V

=56V

A

=1V

V

B

(pF)

C

A

max

70 50 30

50 70 30

LINE B

CB(pF)

max

C

A

C

B

CA-CB(pF)

max

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TPI8011N/TPI12011N

REFERENCETESTCIRCUIT 1 :

TESTPROCEDURE:

PulseTestduration(tp = 20ms):

-For Bidirectionaldevices= SwitchKis closed

-For Unidirectionaldevices= SwitchKisopen.
Selection

V

OUT

-DevicewithV

-V

- Devicewith V

-V

BO

OUT

BO

OUT

< 200 Volt

=250V

≥ 200 Volt

=480V

RMS,R1

,R2= 240Ω.

RMS

= 140Ω.

FUNCTIONAL HOLDINGCURRENT(I

) TEST CIRCUIT 2 :

H

R

D.U.T .

V

= - 48 V

BAT

This isa GO-NOGOTestwhichallowstoconfirmthe holding current(I
testcircuit.

TESTPROCEDURE :

1) Adjustthecurrentlevel at theI

2) Firethe D.U.Twitha surgeCurrent: Ipp= 10A, 10/1000µs.

3) TheD.U.Twill comeback off-statewithin 50 ms max.

valueby short circuitingtheAKoftheD.U.T.

H

Surge generator

)levelin a functional

H

-V

P

4/7

TPI8011N/TPI12011N

Fig. 1:

10

Surgepeakcurrentversusoverloadduration.

I (A)TSM

9
8
7
6
5
4
3
2
1
0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

F=50Hz
Tj initial=25°C

APPLICATIONNOTE.

Tip

GND

1

IN

2

3

OUT

8

Tip

7

GND

6

1) Connectpins2, 3, 6 and 7 to ground in or­der to guaranteeagoodsurgecurrent capabil­ity for longdurationdisturbances.

2) Inorder to take advantageof the ”4-point”
structureoftheTPIxxxN,the Tip and Ring
lines have to crossthedevice. In this case,the
devicewilleliminatethe overvoltagesgener­ated by the parasiticinductancesof the wiring
(Ldi/dt),especiallyfor veryfast transients.

Ring

IN

4

OUT

5

Ring

4- point structurelay-out.

APPLICATIONCIRCUITS :

1 -UINTERFACE PROTECTION

A

TPIxx

B

RorPTC

RorPTC

GND

2 - S INTERFACEPROTECTION

A

TPIxx

B

A

TPIxx

B

GND

GND

RorPTC

RorPTC

RorPTC

RorPTC

This componentusesan intemalstructureresulting in symetricalcharacteristicswith a goodbalanced
behaviour.Itstopologyensures thesamebreakdownvoltagelevelforpositiveand negative surgesin
differentialand common mode.

5/7

TPI8011N/TPI12011N

ORDERCODE

BIDIRECTIONAL

TPI 80 1 1 N RL

PACKAGING:
RL = Tape and reel

= Tube

REVISION

PACKAGE
1=SO8PLASTIC

BREAKDOWNVOLTAGE

MARKING

Package Type Marking

SO8 TPI8011N

TPI12011N

CONNECTIONDIAGRAM

SO8 Plastic

Tip

GND

GND

1

2

3

8

7

6

VERSION

TP80N

TP120N

Tip

GND

GND

6/7

Ring

4

5

Ring

PACKAGEMECHANICALDATA

SO8 Plastic

TPI8011N/TPI12011N

DIMENSIONS

REF.

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.50 0.020
c1 45°(typ)

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8°(max)

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

Packaging: Productssuppliedinantistatictubes

or tape andreel.

Weight:

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use ofsuch informationnor forany infringement of patents orotherrightsof thirdparties which mayresult fromits use. No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. Thispublication supersedesand replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written ap­proval ofSTMicroelectronics.

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