Dedicated devices for ISDN interface and high
speed data telecom line protection. Equivalent to
a triple TRISIL with low capacitance.
These devices provide :
- low capacitance from lines to ground, allowing
highspeedtransmissionwithoutsignal
attenuation.
-
good capacitance balance between lines in
order to ensure longitudinal balance.
-
fixed breakdown voltage in both common and
differential modes.
-
the same surge current capability in both
common and differential modes.
-
A particular attention has been given to the
internalwirebonding.The“4-point”
configuration ensures a reliable protection,
eliminating overvoltages introduced by the
parasitic inductances of the wiring (Ldi/dt),
especially for very fast transient overvoltages.
TPI12011N
TRIPOLAR PROTECTION
FOR ISDN INTERFACES
SO-8
SCHEMATIC DIAGRAM
Tip
GND
GND
Ring
1
2
3
4
8
Tip
7
GND
GND
6
5
Ring
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K17 - K2010/700 µs1.5 kV
5/310µs38A
VDE 043310/700 µs2kV
5/310µs50A
VDE 08781.2/50 µs1.5 kV
1/20µs40A
CNET0.5/700 µs1.5 kV
0.2/310 µs38A
TM: ASDisa trademark of STMicroelectronics.
August 2001- Ed : 3A
1/7
TPI8011N/TPI12011N
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
SymbolParameterValueUnit
I
I
TSM
PP
Peak pulse current (see note 1)
Non repetitive surge peak on-state
current (F = 50 Hz).
T
stg
T
j
T
L
Note 1 : Pulse waveform :
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
10/1000µst
5/310µst
2/10µst
%I
PP
100
=10µst
r
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
10/1000 µs
5/320 µs
2/10 µs
tp=10ms
t=1s
30
40
90
8
3.5
-55to+150
150
260°C
A
A
°C
50
0
t
t
p
r
t
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th (j-a)
Junction to ambient
SO-8170°C/W
2/7
TPI8011N/TPI12011N
ELECTRICAL CHARACTERISTICS (
SymbolParameter
V
RM
I
RM
V
BR
V
BO
I
H
I
BO
I
PP
V
F
C
Types
Stand-off voltage
Leakage current
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Forward Voltage Drop
Capacitance
@V
I
RM
RM
max.min.max.typ.max.min.
µAV VmAV VmAmA
TPI8011N
TPI12011N
1070801120150800150
101051201180200800150
Tamb
=25°C)
VBR@I
R
V
BO
VBO
dyn.
I
BO
I
H
note1note2note1note3
Note 1 : See the reference test circuit 1.
Note 2 : Surge test according to CCITT 1.5kV,10/700 µs between Tip or Ring and ground.
Note 3 : See functional holding current test circuit 2.
CAPACITANCES CHARACTERISTICS
LINE A
LINE A
TPIxx
LINE B
CONFIGURATION
=1V
V
A
=56V
V
B
= 56V
V
A
=1V
V
B
C
(pF)
A
max
705030
507030
LINE B
CB(pF)
max
C
A
C
B
CA-CB(pF)
max
3/7
TPI8011N/TPI12011N
REFERENCE TEST CIRCUIT 1 :
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
Selection
OUT
- Device with V
-V
- Device with V
-V
BO
OUT
BO
OUT
< 200 Volt
= 250 V
≥ 200 Volt
= 480 V
RMS,R1
RMS,R2
= 140 Ω.
= 240 Ω.
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 :
R
D.U.T .
V
= - 48 V
BAT
This is a GO-NOGO Test which allows to confirm the holding current (I
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IHvalue by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
-V
Surge generator
) level in a functional
H
P
4/7
Fig. 1 : Surge peak current versus overload duration.
I(A)TSM
10
9
8
7
6
5
4
3
2
1
0
1E-21E-11E+01E+11E+21E+3
t(s)
F=50Hz
Tj initial=25°C
APPLICATION NOTE.
Tip
1
IN
OUT
8
Tip
TPI8011N/TPI12011N
1) Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances.
2
GND
3
IN
Ring
4
4- point structure lay-out.
APPLICATION CIRCUITS :
1 - U INTERFACE PROTECTION
A
TPIxx
B
OUT
7
6
5
RorPTC
GND
RorPTC
GND
Ring
2) In order to take advantage of the “4-point”
structure of the TPIxxxN, the Tip and Ring
lines have to cross the device. In this case, the
device will eliminate the overvoltages generated by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transients.
2 - S INTERFACE PROTECTION
A
TPIxx
B
A
TPIxx
B
GND
GND
RorPTC
RorPTC
RorPTC
RorPTC
This component uses an intemal structure resulting in symetrical characteristics with a good balanced
behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in
differential and common mode .
5/7
TPI8011N/TPI12011N
ORDER CODE
Bidirectional
TPI 80 1 1 N RL
Packaging:
RL = Tape and reel
= Tube
Breakdown Voltage
MARKING
PackageTypeMarking
SO-8TPI8011N
TPI12011N
CONNECTION DIAGRAM
SO-8 Plastic
Tip
GND
1
2
8
7
Revision
Package:
1 = SO-8 Plastic
Version
TP80N
TP120N
Tip
GND
6/7
GND
Ring
3
4
6
5
GND
Ring
PACKAGE MECHANICAL DATA
SO-8 Plastic
TPI8011N/TPI12011N
DIMENSIONS
REF.
A1.750.069
a10.10.25 0.0040.010
a21.650.065
b0.350.48 0.0140.019
b10.190.25 0.0070.010
C0.500.020
c145° (typ)
D4.85.0 0.1890.197
E5.86.20.2280.244
e1.270.050
e33.810.150
F3.84.00.150.157
L0.41.27 0.0160.050
M0.60.024
S8° (max)
MillimetresInches
Min.Typ. Max. Min. Typ. Max.
Packaging : Products supplied in antistatic tubes
or tape and reel.
Weight : 0.08g
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useof such informationnor for anyinfringement of patentsor other rightsof third partieswhich may resultfromits use. Nolicense is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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