TPI8011N
®
Application Specific Discretes
A.S.D.™
FEATURES
BIDIRECTIONAL TRIPLE CROWBAR
■
PROTECTION.
PEAK PULSE CURRENT :
■
= 30 A , 10/1000 µs.
I
PP
BREAKDOWN VOLTAGE:
■
TPI80xxN : 80V
TPI120xxN : 120V.
AVAILABLE IN SO-8 PACKAGES.
■
LOW DYNAMIC BREAKOVER VOLTAGE :
■
TPI80N : 150V
TPI120 : 200V
DESCRIPTION
Dedicated devices for ISDN interface and high
speed data telecom line protection. Equivalent to
a triple TRISIL with low capacitance.
These devices provide :
- low capacitance from lines to ground, allowing
high speed transmission without signal
attenuation.
-
good capacitance balance between lines in
order to ensure longitudinal balance.
-
fixed breakdown voltage in both common and
differential modes.
-
the same surge current capability in both
common and differential modes.
-
A particular attention has been given to the
internal wire bonding. The “4-point”
configuration ensures a reliable protection,
eliminating overvoltages introduced by the
parasitic inductances of the wiring (Ldi/dt),
especially for very fast transient overvoltages.
TPI12011N
TRIPOLAR PROTECTION
FOR ISDN INTERFACES
SO-8
SCHEMATIC DIAGRAM
Tip
GND
GND
Ring
1
2
3
4
8
Tip
7
GND
GND
6
5
Ring
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K17 - K20 10/700 µs 1.5 kV
5/310 µs38A
VDE 0433 10/700 µs2kV
5/310 µs50A
VDE 0878 1.2/50 µs 1.5 kV
1/20 µs40A
CNET 0.5/700 µs 1.5 kV
0.2/310 µs38A
TM: ASDisa trademark of STMicroelectronics.
August 2001- Ed : 3A
1/7
TPI8011N/TPI12011N
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Symbol Parameter Value Unit
I
I
TSM
PP
Peak pulse current (see note 1)
Non repetitive surge peak on-state
current (F = 50 Hz).
T
stg
T
j
T
L
Note 1 : Pulse waveform :
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
10/1000µst
5/310µst
2/10µst
%I
PP
100
=10µst
r
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
10/1000 µs
5/320 µs
2/10 µs
tp=10ms
t=1s
30
40
90
8
3.5
-55to+150
150
260 °C
A
A
°C
50
0
t
t
p
r
t
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient
SO-8 170 °C/W
2/7
TPI8011N/TPI12011N
ELECTRICAL CHARACTERISTICS (
Symbol Parameter
V
RM
I
RM
V
BR
V
BO
I
H
I
BO
I
PP
V
F
C
Types
Stand-off voltage
Leakage current
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Forward Voltage Drop
Capacitance
@V
I
RM
RM
max. min. max. typ. max. min.
µAV VmAV VmAmA
TPI8011N
TPI12011N
10 70 80 1 120 150 800 150
10 105 120 1 180 200 800 150
Tamb
=25°C)
VBR@I
R
V
BO
VBO
dyn.
I
BO
I
H
note1 note2 note1 note3
Note 1 : See the reference test circuit 1.
Note 2 : Surge test according to CCITT 1.5kV,10/700 µs between Tip or Ring and ground.
Note 3 : See functional holding current test circuit 2.
CAPACITANCES CHARACTERISTICS
LINE A
LINE A
TPIxx
LINE B
CONFIGURATION
=1V
V
A
=56V
V
B
= 56V
V
A
=1V
V
B
C
(pF)
A
max
70 50 30
50 70 30
LINE B
CB(pF)
max
C
A
C
B
CA-CB(pF)
max
3/7
TPI8011N/TPI12011N
REFERENCE TEST CIRCUIT 1 :
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
Selection
OUT
- Device with V
-V
- Device with V
-V
BO
OUT
BO
OUT
< 200 Volt
= 250 V
≥ 200 Volt
= 480 V
RMS,R1
RMS,R2
= 140 Ω.
= 240 Ω.
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 :
R
D.U.T .
V
= - 48 V
BAT
This is a GO-NOGO Test which allows to confirm the holding current (I
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IHvalue by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
-V
Surge generator
) level in a functional
H
P
4/7
Fig. 1 : Surge peak current versus overload duration.
I (A)TSM
10
9
8
7
6
5
4
3
2
1
0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
t(s)
F=50Hz
Tj initial=25°C
APPLICATION NOTE.
Tip
1
IN
OUT
8
Tip
TPI8011N/TPI12011N
1) Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances.
2
GND
3
IN
Ring
4
4- point structure lay-out.
APPLICATION CIRCUITS :
1 - U INTERFACE PROTECTION
A
TPIxx
B
OUT
7
6
5
RorPTC
GND
RorPTC
GND
Ring
2) In order to take advantage of the “4-point”
structure of the TPIxxxN, the Tip and Ring
lines have to cross the device. In this case, the
device will eliminate the overvoltages generated by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transients.
2 - S INTERFACE PROTECTION
A
TPIxx
B
A
TPIxx
B
GND
GND
RorPTC
RorPTC
RorPTC
RorPTC
This component uses an intemal structure resulting in symetrical characteristics with a good balanced
behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in
differential and common mode .
5/7
TPI8011N/TPI12011N
ORDER CODE
Bidirectional
TPI 80 1 1 N RL
Packaging:
RL = Tape and reel
= Tube
Breakdown Voltage
MARKING
Package Type Marking
SO-8 TPI8011N
TPI12011N
CONNECTION DIAGRAM
SO-8 Plastic
Tip
GND
1
2
8
7
Revision
Package:
1 = SO-8 Plastic
Version
TP80N
TP120N
Tip
GND
6/7
GND
Ring
3
4
6
5
GND
Ring
PACKAGE MECHANICAL DATA
SO-8 Plastic
TPI8011N/TPI12011N
DIMENSIONS
REF.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.50 0.020
c1 45° (typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S 8° (max)
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
Packaging : Products supplied in antistatic tubes
or tape and reel.
Weight : 0.08g
Informationfurnished is believedto be accurateandreliable. However, STMicroelectronicsassumes no responsibilityforthe consequences of
useof such informationnor for anyinfringement of patentsor other rightsof third partieswhich may resultfromits use. Nolicense is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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