STMicroelectronics TDA7560 Schematic



TDA7560

4 x 45WQUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

PRODUCT PREVIEW

SUPERIOROUTPUTPOWER CAPABILITY: 4 x50W/4Ω MAX. 4 x45W/4ΩEIAJ 4 x30W/4Ω@ 14.4V,1KHz, 10% 4 x80W/2Ω MAX. 4 x77W/2Ω EIAJ 4 x55W/2Ω @ 14.4V,1KHz, 10%

EXCELLENT2ΩDRIVINGCAPABILITY HI-FICLASS DISTORTION LOW OUTPUT NOISE ST-BYFUNCTION MUTEFUNCTION AUTOMUTEAT MIN. SUPPLYVOLTAGE DE-

TECTION LOW EXTERNAL COMPONENTCOUNT:

– INTERNALLYFIXED GAIN(26dB) – NOEXTERNALCOMPENSATION – NOBOOTSTRAPCAPACITORS

ON BOARD0.35A HIGHSIDE DRIVER

PROTECTIONS:

OUTPUT SHORT CIRCUIT TO GND, TO V ACROSS THELOAD

VERYINDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH

SOFT THERMAL LIMITER LOADDUMP VOLTAGE

MULTIPOWER BCD TECHNOLOGY

MOSFETOUTPUT POWER STAGE

FLEXIWATT25

ORDERING NUMBER: TDA7560

FORTUITOUSOPEN GND REVERSEDBATTERY ESD

DESCRIPTION

The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio

,

S

The fullycomplementaryP-Channel/N-Channel output structure allowsa rail to rail outputvoltage swingwhich, combined with high output current and minimised saturation losses sets new power referencesin the car-radiofield, with unparalleleddistortion performances.

BLOCK AND APPLICATION DIAGRAM

Vcc1 Vcc2

ST-BY

MUTE

IN1

0.1µF

IN2

0.1µF

IN3

0.1µF

IN4

0.1µF

AC-GND

0.47µF47µF

SVR TAB S-GND

HSDHSD OUT1+ OUT1PW-GND

OUT2+ OUT2PW-GND

OUT3+ OUT3PW-GND

OUT4+ OUT4PW-GND

D94AU158B

November 1999

This is preliminary information on a new productnow in development. Details are subject to change without notice.

100nF470µF

1/10

TDA7560

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

CC (DC)

V

CC (pk)

I

O

P

tot

T

j

T

stg

PIN CONNECTION(Topview)

Operating Supply Voltage 18 V DC Supply Voltage 28 V Peak Supply Voltage (t = 50ms) 50 V Output Peak Current:

Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs)

Power dissipation, (T

=70°C) 80 W

case

9

10

Junction Temperature 150 Storage Temperature – 55 to150 °C

A A

C

°

1 25

TAB

OUT2-

P-GND2

ST-BY

CC

V

OUT2+

OUT1-

P-GND1

SVR

OUT1+

IN1

IN2

IN4

S-GND

IN3

OUT3+

AC-GND

OUT3-

P-GND3

CC

V

MUTE

OUT4+

D94AU159A

OUT4-

P-GND4

HSD

THERMAL DATA

Symbol Parameter Value Unit

Thermal Resistance Junction to Case Max. 1

2/10

R

th j-case

C/W

°

TDA7560

ELECTRICALCHARACTERISTICS(VS= 13.2V;f = 1KHz; Rg= 600Ω;RL=4Ω;T

amb

=25°C;

Refer to the test and application diagram,unless otherwisespecified.)

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

dV

I

q1 OS

OS

Quiescent Current RL=

∞

Output Offset Voltage Play Mode During mute ON/OFF output

120 200 320 mA

80 mV

±

80 mV

±

offset voltage

G

v

dG

P

o

P

o EIAJ

P

o max.

THD Distortion P

e

No

SVR Supply Voltage Rejection f = 100Hz; V

f

ch

R

C

T

I

SB

I

pin4

V

SB out

V

SB in

A

M

V

M out

V

Min

V

AM in

Voltage Gain 25 26 27 dB Channel Gain Unbalance ±1dB

v

Output Power VS= 13.2V; THD = 10%

V

= 13.2V; THD = 1%

S

V

= 14.4V; THD = 10%

S

V

= 14.4V; THD = 1%

S

V

= 13.2V; THD = 10%, 2Ω

S

V

= 13.2V; THD = 1%, 2

S

V

= 14.4V; THD = 10%, 2Ω

S

V

= 14.4V; THD = 1%, 2Ω

S

EIAJ Output Power(*) VS= 13.7V; RL=4Ω

V

= 13.7V; RL=2

S

Max. Output Power (*) VS= 14.4V; RL=4

V

= 14.4V; RL=2Ω

S

=4W

o

P

= 10W; RL=2

o

Ω Ω

Ω

Output Noise ”A” Weighted

Bw = 20Hz to 20KHz

= 1Vrms 50 70 dB

r

23 16 28 20

42

Ω

32 50 40

41 75

25 19 30 23

45 34 55 43

45 77

50 80

0.006

0.015 35

50

0.05

0.07 50

70

High Cut-Off Frequency PO= 0.5W 100 300 KHz Input Impedance 80 100 120 KΩ

i

Cross Talk f = 1KHz PO=4W

St-By Current Consumption V

f = 10KHz P

= 1.5V 75

St-By

O

=4W

60 70

60

– –

St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA St-By Out ThresholdVoltage (Amp: ON) 3.5 V St-By in Threshold Voltage (Amp: OFF) 1.5 V Mute Attenuation P

=4W 80 90 dB

Oref

Mute Out ThresholdVoltage (Amp: Play) 3.5 V Mute In Threshold Voltage (Amp: Mute) 1.5 V VSAutomute Threshold (Amp: Mute)

Att≥80dB; P

Oref

=4W

6.5 7

(Amp: Play)

I

pin22

Muting Pin Current V

Att < 0.1dB; P

= 1.5V

MUTE

= 0.5W

O

7.5 8

71218

(Sourced Current) V

= 3.5V -5 18 µA

MUTE

HSD SECTION

V

dropout

I

prot

(*) Saturated square wave output.

Dropout Voltage IO= 0.35A; VS= 9 to16V 0.25 0.6 V Current Limits 400 800 mA

W W W W

W W

% %

V

µ µV

dB dB

A

µ

V V

A

µ

3/10

TDA7560

Figure 1: Standard Test andApplication Circuit

ST-BY

MUTE

IN1

IN2

IN3

IN4

R1

10K

R2

47K

C1

0.1µF

C2 0.1µF

C3 0.1µF

C4 0.1µF

C9

1µF

C10 1µF

S-GND

0.1µF

4

22

11

12

15

14

13

C5

0.47µF

C8

16 10 25 1

C7

2200µF

Vcc1-2 Vcc3-4

620

SVR TAB

C6

47µF

HSD

9 8 7

5 2 3

17 18 19

21 24 23

OUT1

OUT2

OUT3

OUT4

D95AU335B

4/10

STMicroelectronics TDA7560 Schematic [ru]