STMicroelectronics TDA2822M Schematic [ru]

DUALLOW-VOLTAGE POWER AMPLIFIER
.
SUPPLYVOLTAGE DOWN TO 1.8V
.
.
LOW QUIESCENTCURRENT
.
BRIDGE ORSTEREOCONFIGURATION
DESCRIPTION
TheTDA2822Mis amonolithicintegratedcircuit in 8 lead Minidip package. It is intended for use as dual audio power amplifier in portable cassette playersand radios.
TDA2822M
MINIDIP
ORDERING NUMBER : TDA2822M
PIN CONNECTION (Top view)
March 1995
1/11
TDA2822M
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Supply Voltage 15 V Peak Output Current 1 A Total Power Dissipation at T
at T
amb case
=50°C
=50°C
1
1.4
Storage and Junction Temperature – 40, + 150 °C
P
T
stg,Tj
V
s
I
o tot
THERMALDATA
Symbol Parameter Value Unit
R
th j-amb
R
th j-case
Thermal Resistance Junction-ambient Max. 100 °C/W Thermal Resistance Junction-pin (4) Max. 70 °C/W
W W
2/11
TDA2822M
ELECTRICALCHARACTERISTICS (VS=6V,T
=25oC, unlessotherwisespecified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit
STEREO (test circuit of Figure 1)
V V
P
G
G
e
Supply Voltage 1.8 15 V
s
Quiescent Output Voltage
o
I
Quiescent Drain Current 6 9 mA
d
I
Input Bias Current 100 nA
b
Output Power (each channel)
o
(f = 1kHz, d = 10%) R
d Distortion (f = 1kHz) R
Closed Loop Voltage Gain f = 1kHz 36 39 41 dB
v
Channel Balance ± 1dB
v
R
Input Resistance f = 1kHz 100 k
i
Total Input Noise Rs= 10kB = Curve A
N
=3V
V
s
=32 VS=9V
L
=16 VS=6V
R
L
=8 VS=9V
R
L
=4 VS=6V
R
L
=32 Po= 40mW
L
=16 Po= 75mW
R
L
=8 Po= 150mW
R
L
V V V V
V V
V
=6V
S
= 4.5V
S
=3V
S
=2V
S
=6V
S
= 4.5V
S
=3V
S
B = 22Hz to 22kHz
90
15 170 300
450
2.7
1.2
300 120
60 20
5
220
1000
380 650 320 110
0.2
0.2
0.2
2
2.5
V V
mW
% % %
µV µV
SVR Supply Voltage Rejection f = 100Hz, C1 = C2 = 100µF2430 dB
C
Channel Separation f = 1kHz 50 dB
s
BRIDGE (test circuit of Figure 2)
V
V
P
G
e
Supply Voltage 1.8 15 V
s
I
Quiescent Drain Current RL= 69mA
d
Output Offset Voltage
os
(between the outputs) Input Bias Current 100 nA
I
b
Output Power (f = 1kHz, d = 10%)
o
d Distortion P
Closed Loop Voltage Gain f = 1kHz 39 dB
v
R
Input Resistance f = 1kHz 100 k
i
Total Input Noise Rs= 10kB = Curve A
N
RL=8 ±50 mV
=32 VS=9V
R
L
=16 VS=9V
R
L
=8 VS=6V
R
L
=4 VS= 4.5V
R
L
= 0.5W, RL=8Ω, f = 1kHz 0.2 %
o
V V V V
V V
V V
V V
=6V
S
= 4.5V
S
=3V
S
=2V
S
=6V
S
=3V
S
= 4.5V
S
=3V
S
=3V
S
=2V
S
320
50
900
200
1000
400 200
65
8
2000
800 120
1350
700 220
1000
350
80
2.5
B = 22Hz to 22kHz
3
mW
µV µV
SVR Supply Voltage Rejection f = 100Hz 40 dB
B Power Bandwidth (–3dB) R
=8Ω,Po= 1W 120 kHz
L
3/11
TDA2822M
Figure1 : TestCircuit (Stereo)
Figure2 : TestCircuit (Bridge)
Figure3 : P.C.Board and Components Layout
of the Circuitof Figure1
4/11
Figure 4 : P.C. Boardand ComponentsLayout
of theCircuit of Figure 2
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