STMicroelectronics TD350 Technical data

TD350

Advanced IGBT/MOSFET Driver

■ 0.75A source/1.2A sink min gate drive

■ Active Miller clamp feature

■ Two steps turn-off with adjustable level

and delay

■ Desaturation detection

■ Fault status output

■ Negative gate drive ability

■ Input compatible with pulse transformer or

optocoupler

■ Separate sink and source outputs for easy

gate dr i ve

■ UVLO protection

■ 2kV ESD protection

Description

TD350 is an advanced gate driver for IGBT and power MOSFET. Control and protection functions are included and allow the design of high reliability systems.

Innovative active Miller clamp function avoids the need of negative gate drive in most applications and allows th e use of a simple bo otstrap supply for the high side driver

TD350 includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltag e at turn-off in case of overcurrent or short-circuit condition. Same delay is applied at turn-on to prevent pulse width distortion. TD350 also includes an IGBT desaturation protection and a FAULT status output.

TD350 is compat ible with both pulse transformer and optocoupler signals.

Applications

■ 1200V 3-Phase Inverter

■ Motor C

ontrol

■ UPS Systems

SO-14

(Plastic MicroPacka ge)

Pin Connections (top view )

VREF

FAULT

COFF

LVOFF

TD350

DESAT

OUTH

OUTL

CLAMP

GND

Order Codes

Part Number Temperature Range Package Packaging

TD350ID

TD350IDT Tape & Reel

August 2004 Revision 1 1/11

-40, +125°C SO

Tube

TD350 Block Diagram

1 Block Diagram

Figure 1: Sche m atic block diagram

Vref

Off

UVLO

DESAT

Desat

Control Block

OUTH

OUTL

CLAMP

GND

16V

Optionnal

-10V

Pulse Transformer

Vref

VREF

FAULT

COFF

LVOFF

Vref

delay

Off Level

TD350

Table 1: Pin description

Name Pin Number Type Function

IN 1 Analog input Input VREF 2 Analog output +5V reference voltage FAULT 3 Digital output Fault status output NC 4 Not connected COFF 5 Timing capacitor Turn off delay NC 6 Not connected LVOFF 7 Analog input Turn off level GND 8 Power supply Signal ground CLAMP 9 Analog output Miller clamp VL 10 Power supply Negative supply OUTL 11 Analog output Gate drive output (sink) OUTH 12 Analog output Gate drive output (source) VH 13 Power supply Positive supply DESAT 14 Analog input Desaturation protection

2/11

Absolute Maximum Ratin gs TD350

2 Absolute Maximum Rat ings

Table 2: Key parameters and their absolute maximum ratings

Symbol Parameter Value Unit

VHL Maximum Supply Voltage (VH - VL) 28 V

VH Maximum VH voltage vs. GND 28 V

VL Minimum VL voltage vs. GND -12 V

Vout Voltage on OUTH, OUTL, CLAMP pins VL-0.3 to VH+0.3 V

Vdes Voltage on DESAT, FAULT, LVOFF pin -0.3 to VH+0.3 V

Vter Voltage on other pins (IN, COFF, VREF) -0.3 to 7 V

Pd Power dissipation 500 mW

Tstg Storage temperature -55 to 150 °C

Tj Maximum Junction Temperature 150 °C

Rhja Thermal Resis tance Junction-A mbie nt 125 °C/W

Rhjc The rmal Resis tance Junction-C ase 22 °C/W

ESD Electrostatic discharge 2 kV

Table 3: Operat in g conditions

Symbol Parameter Value Unit

VH Positive Supply Voltage vs. GND UVLO to 26 V

VL Negative Supply Voltage vs. GND 0 to -10 V

VH-VL Maximum Total Supply Voltage 26 V

Toper Operating Free Air Temperature Range -40 to 125 °C

3/11

TD350 Electrical Characteristics

3 Electrical Characteristics

Table 4: T

Symbol Parameter Test Condi t io n Min Ty p Max Unit

Input

Vton IN turn-on threshold voltage 0.8 1.0 V Vtoff IN turn-off threshold voltage 4.0 4.2 V

tonmin Minimum pulse width 100 135 220 ns

Iinp IN Input current 1

Voltage reference - note

Vref Voltage reference

Iref Maximum output current 10 mA

Desaturation protection

Vdes Desaturation threshold 6.5 7.2 7.9 V

Ides Source current 250

Fault output

tfault Delay for fault detection 500 ns

VFL FAULT low voltage Ifsink=10mA 1 V

Clamp

Vtclamp CLAMP pin voltage threshold 2.0 V

VCL Clamp low voltage at Icsink=500mA

Off Delay

Vtdel Voltage threshold 2.35 2.50 2.65 V

Rdel Disch arge resisto r I=1mA 500

Off Levels

Iblvoff LVOFF peak input current (sink) LVOFF=12V 120 200

Violv Offset voltage LVOFF=12V -0.3 -0.15 0 V

Outputs

VOL1 Output low voltage at Iosink=20mA VL+0.35 V VOL2 Output low voltage at Iosink=200mA

VOL3 Output low voltage at Iosink=500mA

VOH1 Output high voltage 1 Iosource=20mA VH-2.5 V VOH2 Output high voltage 2 Iosource=200mA VH-3.0 V VOH3 Output high voltage 3 Iosource=500mA VH-4.0 V

tr Rise time

tpd

∆tw Input to output pulse distortion 10% output change 10 60 110 ns

Under Voltage Lockout (UVLO)

UVLOH UVLO top threshold 10 11 12 V

UVLOL UVLO bottom threshold 9 10 11 V

Vhyst UVLO hysteresis UVH-UVL 0.5 1 V

Supply current

Iin Quiescent current output=0V, no load 5 mA

1) Recommended capac itor range on VR E F pi n i s 10nF to 100nF.

4/11

= -20 to 125°C, VH=16V, VL=-10V (unless otherwise spe cified)

amb

T=25°C Tmin<T<Tmax

CL=1nF, 10% to 90% VL=0 VL=-10V

Fall time (2 step turn-off disabled)

Input to output propagation delay at turn-on (2 step delay disabled)

CL=1nF, 90% to 10% VL=0 VL=-10V

10% output change

4.85

4.77

270 800 ns

5.00 5.15

5.22

VL+2.5 VL+3.0

VL+1.0 VL+1.5

VL+2.5 VL+3.0

130 175

75 90

µA

V V

µA

V V

Ω

µA

V V

ns ns

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