STMicroelectronics STY60NM50 Technical data

STY60NM50

N-CHANNEL 500V - 0.045Ω - 60A Max247

Zener-Protected MDmesh™Power MOSFET

TYPE V

STY60NM50 500V < 0.05Ω 60 A



TYPICAL RDS(on) = 0.045Ω



HIGH dv/dt AND AVALANCHE CAPABILITIES



IMPROVED ESD CAPABILITY



LOW INPUT CAPACITANCE AND GATE

DSS

R

DS(on)

I

D

CHARGE



LOW GATE INPUT RESISTANCE



TIGHT PROCESS CONTROL



INDUSTRY’S LOWEST ON-RESISTANCE

DESCRIPTION

The MDmes h™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar c ompetition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing
power densi ty of high voltage converters allowing
system miniaturization and higher efficiencies.

3

2

1

Max247

INTERNAL SCHE M ATIC DIAGRAM

ABSOLUTE M AXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

T

j

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 240 A
Total Dissipation at TC= 25°C
Gate source ESD(HBM-C=100pF, R=15KΩ) 6KV
Derating Factor 4.5 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD≤60A, di/dt ≤400A/µs, VDD≤ V

500 V
500 V

60 A

37.8 A

560 W

(BR)DSS,Tj≤TJMAX

1/8November 2003

STY60NM50

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.22 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACT ERISTICS (TCASE = 25 °C UNLESS OTHERWISE S PECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID=IAR,VDD=35V)

j

ID= 250 µA, VGS= 0 500 V

30 A

1.4 J

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 20V ± 10 µA

GS

10 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID=30A

= 250µA

345V

0.045 0.05 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

ID= 30A

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 980 pF
Reverse Transfer

V

Capacitance

R

G

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

D(on)xRDS(on)max,

=25V,f=1MHz,VGS=0

DS

35 S

7500 pF

200 pF

1.5 Ω

2/8

STY60NM50

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs

gd

Turn-on Delay Time
Rise Time 58 ns
Total Gate Charge

g

Gate-Source Charge 53 nC
Gate-Drain Charge 97 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f
c

Off-voltage Rise Time
Fall Time 46 ns
Cross-over Time 108 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limitedby safe operating area.

Source-drain Current 60 A

(2)

Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

= 250V, ID= 30A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)
V

= 400V, ID= 60A,

DD

VGS=10V

V

=400V,ID= 60A,

DD

= 4.7Ω, VGS=10V

R

G

(see test circuit, Figure 5)

ISD= 60A, VGS=0

= 60A, di/dt = 100A/µs,

I

SD

VDD= 100 V, Tj= 25°C
(see test circuit, Figure 5)

= 60A, di/dt = 100A/µs,

I

SD

V

= 100 V, Tj= 150°C

DD

(see test circuit, Figure 5)

51 ns

190 266 nC

51 ns

1.5 V

532

9.9
37

636

13.4
42

ns

µC

A

ns

µC

A

Thermal ImpedanceSafe Operating Area

3/8