STMicroelectronics STP6NK90Z, STP6NK90ZFP, STB6NK90Z, STW7NK90Z Technical data

STP6NK90Z - STP6NK90ZFP

3

STB6NK90Z - STW7NK90Z

N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PA K/ TO -2 4 7

Zener-protected SuperMESH™ Power MOSFET

General features

V

Type

DSS

(@Tjmax)

R

DS(on)

I

D

STP6NK90Z 900 V < 2 Ω 5.8 A

STP6NK90ZFP 900 V < 2 Ω 5.8 A

STB6NK90Z 900 V < 2 Ω 5.8 A

STW7NK90Z 900 V < 2 Ω 5.8 A

■ Extremely high dv/dt capability

■ 100% avalange tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

TO-220

D2PAK

3

1

TO-220FP

TO-247

Internal schematic diagram

2

1

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STP6NK90Z P6NK90Z TO-220 Tube

STP6NK90ZFP P6NK90ZFP TO-220FP Tube

STB6NK90ZT4 B6NK90Z

STW7NK90Z W7NK90Z TO-247 Tube

August 2006 Rev 4 1/18

2

PA K

D

Tape e reel

www.st.com

18

Contents STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18

STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage (VGS = 0) 900 V

DS

Gate-source voltage ± 30 V

GS

Drain current (continuous) at TC = 25°C 5.8 5.8

I

D

Drain current (continuous) at TC = 100°C 3.65 3.65

I

D

(2)

Drain current (pulsed) 23.2 23.2

Total dissipation at TC = 25°C 140 30 W

TOT

I

DM

P

V

V

Derating factor 1.12 0.24 W/°C

(3)

dv/dt

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from

V

all three leads to external heat sink

ISO

(t=1s; Tc= 25°C)

Max operating junction temperature

T

j

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 5.8 A, di/dt ≤ 200A/µs, VDD ≤ V

Storage temperature

stg

(BR)DSS

, Tj ≤ T

JMAX.

TO-220/

2

D

PA K/ TO2 47

TO220FP

- 2500 V

-55 to 150

(1)

(1)

(1)

A

A

A

°C
°C

Table 2. Thermal data

Symbol Parameter Value Unit

2

D

PAK

TO-220FP TO-247

0.39 4.2 0.89 °C/W

60 °C/W

62.5 50 °C/W

300 °C

R

thj-case

R

thj-pcb

R

thj-amb

Thermal resistance junction­case max

Thermal resistance junction­case max

Thermal resistance junction­ambient max

Maximum lead temperature for

T

l

soldering purpose

TO-220

3/18

Electrical ratings STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

I

AR

E

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy

AS

(starting Tj=25°C, Id=Iar, Vdd=50V)

5.8 A

300 mJ

Table 4. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BV

Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

GSO

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

4/18

STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z Electrical characteristics

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown voltage

Zero gate voltage
Drain current (V

GS

= 0)

Gate-body leakage
Current (V

DS

= 0)

Gate threshold voltage

Static drain-source on
resistance

=1mA, VGS = 0

I

D

= Max Rating

V

DS

= Max Rating, TC = 125°C

V

DS

VGS = ± 20 V

= VGS, ID = 100 µA

V

DS

VGS = 10 V, ID = 2.9 A

900 V

1

50µAµA

± 10 µA

33.754.5 V

1.56 2 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

g

C

oss eq.

(1)

fs

C

C

C

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer capacitance

rss

(2)

Equivalent output
capacitance

= 15v, ID = 2.9 A

V

DS

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

VDS =0V, VDS = 0V to 720V

5S

1350

130

26

70 pF

pF
pF
pF

t

d(on)

t

r(off)

Q

Q

Q

T

r(Voff)

T

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Turn-on delay time

t

Rise time

r

Turn-off delay time
Fall time

t

r

g

Total gate charge
Gate-source charge

gs

Gate-drain charge

gd

Off-voltage rise time

T

Fall time

r

Cross-over time

c

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

.

= 450 V, ID = 3 A,

V

DD

R

= 4.7 Ω, V

G

GS

(see Figure 20)

= 720 V, ID = 5.8 A,

V

DD

= 10 V

V

GS

= 720 V, ID = 5.8 A,

V

DD

= 4.7 Ω, V

R

G

GS

(see Figure 22)

= 10 V

= 10 V

17
45
20
20

46.5

8.5
25

11
12
20

60.5 nC

when VDS

oss

ns
ns
ns
ns

nC
nC

ns
ns
ns

5/18

Electrical characteristics STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage

Reverse recovery time
Reverse recovery charge
Reverse recovery current

= 5.8 A, VGS = 0

I

SD

= 5.8 A, di/dt = 100

I

SD

A/µs

= 36 V, Tj = 150°C

V

DD

(see Figure 22)

840

5880

14

5.8

23.2AA

1.6 V

ns
µC
A

6/18