Datasheet STPS1H100 Datasheet (STMicroelectronics)

Page 1
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
Tj (max) 175°C
(max) 0.62 V
V
F
1 A
STPS1H100
FEATURES AND BENEFITS
Negligible switching losses
High junction temperature capability
Low leakage cuurent
Good trade-off between leakage current and
(JEDEC DO-214AC)
SMA
STPS1H100A
SMB
(JEDEC DO-214AA)
STPS1H100U
forward voltage drop
Avalanche capability specified
DESCRIPTION
Schottky rectifiers designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters.
Table 2: Order Codes
Part Number Marking
STPS1H100A S11 STPS1H100U G11
Packaged in SMA or SMB.
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
T
Repetitive peak reverse voltage 100 V
RMS forward voltage 10 A
Average forward current
TL = 160°C δ = 0.5
Surge non repetitive forward current tp = 10ms sinusoidal 50 A
Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100µs square 1 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
1A
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* : thermal runaway condition for a diode on its own heatsink
---------------
dTj
1
--------------- ----------->
Rth j a()
August 2004
REV. 5
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STPS1H100
Table 4: Thermal Resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
Table 5: Static Electrical Characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25°C
T
IR *
Reverse leakage current
j
Tj = 125°C
Tj = 25°C
VF **
Forward voltage drop
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.54 x I
Tj = 125°C
= 25°C
T
j
T
= 125°C
j
V
= V
R
IF = 1A
IF = 2A
F(AV)
SMA 30 SMB 25
RRM
0.58 0.62
0.65 0.7
+ 0.08 I
F2(RMS)
°C/W
4
0.2 0.5
0.77
0.86
µA
mA
V
Figure 1: Average forward power dissipation versus average forward current
P (W)
F(AV)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Normalized avalanche power derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus ambient temperature (δ = 0.5)
I (A)
F(AV)
1.2
R=R
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160 180
δ
T
=tp/T
R =120°C/W
th(j-a)
R =100°C/W
th(j-a)
T (°C)
tp
amb
th(j-a) th(j-I)
Figure 4: Normalized avalanche power derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
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STPS1H100
Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)
I (A)
M
8
7
6
T =25°C
5
4
3
2
IM
1
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
a
T =75°C
a
T =110°C
a
Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA)
Z/R
th(j-c) th(j-c)
1.00
δ = 0.5
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)
I (A)
M
10
9
8
7
6
5
4
3
I
M
2
1
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
T =25°C
a
T =75°C
a
T =110°C
a
Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB)
Z/R
th(j-c) th(j-c)
1.00
= 0.5
δ
δ = 0.2
δ = 0.1
0.10
δ
=tp/T
T
tp
Single pulse
t (s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
p
Figure 9: Reverse leakage current versus reverse voltage applied (typical values)
I (µA)
R
2E+2 1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 102030405060708090100
T =125°C
j
T =25°C
j
V (V)
R
= 0.2
δ
= 0.1
δ
0.10
Single pulse
t (s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
p
δ
=tp/T
T
tp
Figure 10: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
100
F=1MHz T =25°C
j
50
20
V (V)
10
1 10 100
R
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STPS1H100
Figure 11: Forward voltage drop versus forward current (maximum values)
I (A)
FM
2E+1
1E+1
T =125°C
j
T =25°C
1E+0
1E-1
V (V)
1E-2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FM
j
Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB)
R (°C/W)
th(j-a)
120
110
100
90
80
70
60
50
40
30
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(Cu)(cm²)
Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA)
R (°C/W)
th(j-a)
140
130
120
110
100
90
80
70
60
50
40
30
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(Cu)(cm²)
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Figure 14: SMA Package Mechanical Data
STPS1H100
DIMENSIONS
E1
D
E
A1
C
L
A2
Figure 15: SMA Foot Print Dimensions
(in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.03 0.075 0.080
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
b
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
1.45 1.45
2.40
1.65
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STPS1H100
Figure 16: SMB Package Mechanical Data
DIMENSIONS
E1
D
E
A1
C
L
A2
Figure 17: SMB Foot Print Dimensions
(in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
b
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
1.52 2.75
2.3
1.52
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STPS1H100
Table 6: Ordering Information
Ordering type Marking Package Weight Base qty Delivery mode
STPS1H100A S11 SMA 0.068 g 5000 Tape & reel STPS1H100U G11 SMB 0.107 g 2500 Tape & reel
Band indicates cathode
Epoxy meets UL94, V0
Table 7: Revision History
Date Revision Description of Changes
Jul-2003 4A Last update.
Aug-2004 5
SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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