STMicroelectronics STPS1H100 Technical data

®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
Tj (max) 175°C
(max) 0.62 V
V
F
1 A
STPS1H100
FEATURES AND BENEFITS
Negligible switching losses
High junction temperature capability
Low leakage cuurent
Good trade-off between leakage current and
(JEDEC DO-214AC)
SMA
STPS1H100A
SMB
(JEDEC DO-214AA)
STPS1H100U
forward voltage drop
Avalanche capability specified
DESCRIPTION
Schottky rectifiers designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters.
Table 2: Order Codes
Part Number Marking
STPS1H100A S11 STPS1H100U G11
Packaged in SMA or SMB.
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
T
Repetitive peak reverse voltage 100 V
RMS forward voltage 10 A
Average forward current
TL = 160°C δ = 0.5
Surge non repetitive forward current tp = 10ms sinusoidal 50 A
Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100µs square 1 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
1A
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* : thermal runaway condition for a diode on its own heatsink
---------------
dTj
1
--------------- ----------->
Rth j a()
August 2004
REV. 5
1/7
STPS1H100
Table 4: Thermal Resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
Table 5: Static Electrical Characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25°C
T
IR *
Reverse leakage current
j
Tj = 125°C
Tj = 25°C
VF **
Forward voltage drop
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.54 x I
Tj = 125°C
= 25°C
T
j
T
= 125°C
j
V
= V
R
IF = 1A
IF = 2A
F(AV)
SMA 30 SMB 25
RRM
0.58 0.62
0.65 0.7
+ 0.08 I
F2(RMS)
°C/W
4
0.2 0.5
0.77
0.86
µA
mA
V
Figure 1: Average forward power dissipation versus average forward current
P (W)
F(AV)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Normalized avalanche power derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus ambient temperature (δ = 0.5)
I (A)
F(AV)
1.2
R=R
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160 180
δ
T
=tp/T
R =120°C/W
th(j-a)
R =100°C/W
th(j-a)
T (°C)
tp
amb
th(j-a) th(j-I)
Figure 4: Normalized avalanche power derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
2/7
STPS1H100
Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)
I (A)
M
8
7
6
T =25°C
5
4
3
2
IM
1
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
a
T =75°C
a
T =110°C
a
Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA)
Z/R
th(j-c) th(j-c)
1.00
δ = 0.5
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)
I (A)
M
10
9
8
7
6
5
4
3
I
M
2
1
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
T =25°C
a
T =75°C
a
T =110°C
a
Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB)
Z/R
th(j-c) th(j-c)
1.00
= 0.5
δ
δ = 0.2
δ = 0.1
0.10
δ
=tp/T
T
tp
Single pulse
t (s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
p
Figure 9: Reverse leakage current versus reverse voltage applied (typical values)
I (µA)
R
2E+2 1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 102030405060708090100
T =125°C
j
T =25°C
j
V (V)
R
= 0.2
δ
= 0.1
δ
0.10
Single pulse
t (s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
p
δ
=tp/T
T
tp
Figure 10: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
100
F=1MHz T =25°C
j
50
20
V (V)
10
1 10 100
R
3/7
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