ST MICROELECTRONICS SM6T 36A STM Datasheet
Features
■ Peak Pulse Power: 600 W (10/1000 µs)
■ Breakdown voltage range:
From 6.8 V to 220 V
■ Uni and Bidirectional types
■ Low clamping factor
■ Fast response time
■ UL recognized
Description
A
K
Unidirectional
SM6T
Transil™
Bidirectional
The SM6T Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, MIL STD
883E Method 3015, and electrical over stress
such as IEC 61000-4-4 and 5. They are, more
generally, suitable for surges below 600 W,
10/1000 µs
This planar technology makes the SM6T
compatible with high-end equipment and SMPS
where low leakage current and high junction
temperature are required to provide reliability and
stability over time.
Automotive grade versions are available (see
Section 4: Ordering information).
SMB
(JEDEC DO-214AA)
TM: Transil is a trademark of STMicroelectronics
March 2008 Rev 6 1/9
www.st.com
9
Characteristics SM6T
1 Characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
P Power dissipation on infinite heatsink T
I
FSM
T
stg
T
T
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Non repetitive surge peak forward
current for unidirectional types
Storage temperature range
Operating junction temperature range
j
Maximum lead temperature for soldering during 10 s. 260 °C
L
Symbol Parameter Value Unit
R
th(j-l)
R
th(j-a)
Table 3. Electrical characteristics (T
Junction to leads 20 °C/W
Junction to ambient on printed circuit on recommended
pad layout
Symbol Parameter
V
RM
V
V
I
RM
I
PP
Stand-off voltage
Breakdown voltage
BR
Clamping voltage
CL
Leakage current
Peak pulse current
αT Voltage temperature coefficient
V
Forward voltage drop
F
(1)
amb
Tj initial = T
amb
= 10 ms
t
p
initial = T
T
j
= 25 °C)
amb
600 W
= 50 °C 5 °C
amb
100 °C
-65 to 175
-55 to 150
°C
100 °C/W
I
I
F
VVCLV
BR
V
RM
V
F
I
RM
I
PP
V
Figure 1. Pulse definition for electrical characterisitcs
t
2/9
Repetitive pulse current
tr= rise time (µs)
tp= pulse duration time (µs)
t
p
r
SM6T Characteristics
Table 4. Electrical characteristics, parameter values (T
Order code
I
max min nom max max max max typ
µA
(Tj=25°C)µA(Tj=85°C)
RM
@ V
RM
= 25 °C)
amb
V
(1)
VBR @ I
@ I
(2)
R
CL
10/1000 µs
PP
(3)
V
@ I
CL
8/20 µs
VVV VmAV A V A10
PP
(3)
(4)
αT
-4
/°C pF
SM6T6V8A/CA 10 50 5.8 6.45 6.8 7.14 10 10.5 57 13.4 298 5.7 4000
SM6T7V5A/CA 10 50 6.4 7.13 7.5 7.88 10 11.3 53 14.5 276 6.1 3700
SM6T10A/CA 1 10 8.55 9.5 10 10.5 1 14.5 41 18.6 215 7.3 2800
SM6T12A/CA 0.5 1 10.2 11.4 12 12.6 1 16.7 36 21.7 184 7.8 2300
SM6T15A/CA 0.5 1 12.8 14.3 15 15.8 1 21.2 28 27.2 147 8.4 1900
SM6T18A/CA 0.5 1 15.3 17.1 18 18.9 1 25.2 24 32.5 123 8.8 1600
SM6T22A/CA 0.5 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350
SM6T24A/CA 0.5 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250
SM6T27A/CA 0.5 1 23.1 25.7 27 28.4 1 37.5 16 48.3 83 9.6 1150
SM6T27AY
(6)
0.5 1 23.1 25.7 27 28.4 1 37.5 16 48.3 83 9.6 1150
SM6T30A/CA 0.5 1 25.6 28.5 30 31.5 1 41.5 14.5 53.5 75 9.7 1075
SM6T33A/CA 0.5 1 28.2 31.4 33 34.7 1 45.7 13.1 59.0 68 9.8 1000
(5)
C
SM6T36A/CA 0.5 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950
SM6T36AY
(6)
0.5 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950
SM6T39A/CA 0.5 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900
SM6T39AY
(6)
0.5 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900
SM6T68A/CA 0.5 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625
SM6T75A/CA 0.5 1 64.1 71.3 75 78.8 1 103 5.8 134 30 10.5 575
SM6T100A/CA 0.5 1 85.5 95.0 100 105 1 137 4.4 178 22.5 10.6 500
SM6T150A/CA 0.5 1 128 143 150 158 1 207 2.9 265 15 10.8 400
SM6T200A/CA 0.5 1 171 190 200 210 1 274 2.2 353 11.3 10.8 350
SM6T220A/CA 0.5 1 188 209 220 231 1 328 2 388 10.3 10.8 330
1. For bidirectional types having VRM ≤ 10 V, IRM shown should be multiplied by 2.
2. Pulse test: t
3. For pulse definition see Figure 1.
4. ΔV
BR
= 0 V, F = 1 MHz. For bidirectional types, capacitance value shown should be divided by 2.
5. V
R
6. Automotive grade version (qualified according to AEC Q101)
< 50 ms
p
= αT * (T
- 25) * VBR(25 °C)
amb
3/9
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