STMicroelectronics PD55008S-E Service Manual

www.DataSheet4U.com

N-Channel enhancement-mode lateral MOSFETs

General features

■ Excellent thermal stability

■ Common source configuration

■ P

■ New RF plastic package

Description

= 8W with 17dB gain @ 500MHz / 12.5V

OUT

PD55008-E

PD55008S-E

RF POWER transistor, LDMOST plastic family

PowerSO-10RF

(formed lead)

The PD55008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies up to 1 GHz.

PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. PD55008’s superior
linearity performance makes it an ideal solution
for car mobile radio.

The PowerSO-10 plastic package, designed to
offer high r elia bility, is the first ST JEDE C
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.

Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)

PowerSO-10RF

(straight lead)

Pin conn ection

Gate

Source

Drain

Order codes

Part number Package Packing

PD55008-E PowerSO-10RF (formed lead) Tube

PD55008S-E PowerSO-10RF (straight lead) Tube

PD55008TR-E PowerSO-10RF (formed lead) Tape and reel

PD55008STR-E PowerSO-10RF (straight lead) Tape and reel

April 200 6 Rev 1 1/28

www.st.com

28

Contents PD55008-E, PD55008S-E

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

7.1 PD55008 (VDS = 12.5V IDS = 150mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 16

7.2 PD55008 (VDS = 12.5V IDS = 800mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 17

7.3 PD55008 (VDS = 12.5V IDS = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

7.4 PD55008S (VDS = 12.5V IDS = 150mA) . . . . . . . . . . . . . . . . . . . . . . . . . 19

7.5 PD55008S (VDS = 12.5V IDS = 800mA) . . . . . . . . . . . . . . . . . . . . . . . . . 20

7.6 PD55008S (VDS = 12.5V IDS = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

8 Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

2/28

PD55008-E, PD55008S-E Electrical data

1 Electrical data

1.1 Maximum ratings

Table 1. Absolute maximum ratings (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

T

J

T

STG

1.2 Thermal data

Table 2. Thermal data

Symbol Parameter Value Unit

R

thJC

= 25°C)

CASE

Drain-source voltage 40 V
Gate-source voltage ± 20 V
Drain current 4 A
Power dissipati on (@ TC = 70°C) 52.8 W
Max. operating junction temperature 165 °C
St orage temperature -65 to +150 °C

Junction - case thermal resistance 1.8 °C/W

3/28

Electrical Characteristics PD55008-E, PD55008S-E

2 Electrical Characteristics

T

= +25 oC

CASE

2.1 Static

Table 3. Static

Symbol Test conditions Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

g

FS

C

ISS

C

OSS

C

RSS

2.2 Dynamic

Table 4. Dynamic

Symbol Test conditions Min. Typ. Max. Unit

P

OUT

G

P

n

D

Load

mismatch

VGS = 0V VDS = 28V 1 µA
VGS = 20V VDS = 0V 1 µA
VDS = 10V

= 150mA 2.0 5.0 V

ID

= 10V ID = 1.5A 0.67 V
VDS = 10V ID = 1.5A 1.6 mho
VGS = 0V VDS = 12.5V f = 1MHz 58 pF
VGS = 0V VDS = 12.5V f = 1MHz 38 pF
VGS = 0V VDS = 12.5V f = 1MHz 2.8 pF

VDD = 12.5V, IDQ = 150mA f = 500MHz 8 W
VDD = 12.5V, IDQ = 150mA, P
VDD = 12.5V, IDQ = 150mA, P
V

= 15.5V, IDQ = 150mA, P

DD

All phase angles

= 8W, f = 500MHz 15 17 dB

OUT

= 8W, f = 500MHz 50 55 %

OUT

= 8W, f = 500MHz

OUT

20:1 VSWR

4/28

PD55008-E, PD55008S-E Impedance

3 Impedance

Figure 1. Current conventions

Table 5. Impedance data

PD55008 PD55008S

Freq. (MHz) ZIN (Ω) ZDL(Ω)Freq. (MHz)Z

480 1.141 - j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960
500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j 3.448 2.129 + j 3.219
520 1.649 - j 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043
800 1.05 + j 0.54 2.62 - j 1.91
850 1.50 + j 1.00 2.26 - j 1.54
900 1.95 + j 2.28 2.70 - j 1.90

(Ω)Z

IN

DL

(Ω)

5/28

Typical performance PD55008-E, PD55008S-E

5

6

0

4 Typical performance

Figure 2. Capacitance vs. drain voltage Figure 3. Drain current vs. gate-source

voltage

1000

f=1 MHz

100

10

Coss

C, CAPACITANCES (pF)

1

0 5 10 15 20 2

Crss

VDD, DRAIN VOLT AGE (V)

Figure 4. Gate-source voltage vs. case

temperature

1.06

1.04

1.02

Ciss

4

3

2

1

Id, DRAIN CURRENT (A)

0

12345

VGS, G ATE-SOURCE VOLTAGE (V )

Vds = 10 V

1

0.98

0.96

0.94

VGS, GATE-SOURCE VOLTAGE(NORMALIZED)

0.92

VDS= 10 V

-25 0 25 50 75 10
Tc, CASE TEMPERATURE (°C)

ID= .5A

=

I

D

ID= 2A

ID= 1.5A

ID= 1A

.25A

6/28

PD55008-E, PD55008S-E Typical performance

9

2

PD55008

Figure 5. Output power vs. input power Figure 6. Power gain vs. output power

14
12

480 MHz

10

520 MHz

500 MHz

8
6
4
2

Pout, OUTPUT P OWER (W)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.

VDD= 12.5 V

= 150 mA

I

DQ

Pin, INPUT POWER (W)

Figure 7. Drain efficiency vs. output power Figure 8. Input return loss vs. output power

22
20
18
16
14
12
10

Pg, POWER GAIN (dB)

8
6

024681012

VDD= 12.5 V
I

= 150 mA

DQ

520 MHz

80
70
60
50

520 MHz

500 MHz

480 MHz

40

0

-10

-20

480 MHz

500 MHz

Pout, OUTPUT POWER (W )

500 MHz

480 MHz

30
20
10

Nd, DRAIN EFFICIE NCY (%)

0

024681012

VDD= 12.5 V

= 150 mA

I

DQ

Pout, OUTPUT POWER (W)

-30

VDD= 12.5 V
I

= 150 mA

DQ

Rtl, INPUT RETURN LOSS (dB )

-40
02468101

520 MH z

Pout, OUTPUT POWER (W)

7/28

Typical performance PD55008-E, PD55008S-E

PD55008

Figure 9. Output power vs. bias current Figure 10. Drain efficiency vs. bias current

12

10

8

500 MHz

6

480 MHz

520 MHz

4

2

Pout, OUTPUT P O WER (W)

0

0 100 200 300 400 500 600 700 800

VDD= 12.5 V
Pin= 21.7 dBm

IDQ, BIAS CURRENT (mA)

Figure 11. Output power vs. supply voltage Figure 12. Drain efficiency vs. supply voltage

70

60

50

40

30

20

Nd, DRAIN EFFICIENCY (%)

10

0 100 200 300 400 500 600 700 800

480 MHz

13
12

11

10

9
8
7
6
5

Pout, OUTPUT POWER (W)

4
3

9 101112131415

500 MHz

VDD, SUPPLY VOLTAGE (V)

480 MHz

520 MHz

Idq= 150 mA
Pin= 21.7 dB m

70

60

50

40

30

Nd, DRAIN EFFICIENCY (%)

20

9 101112131415

VDD, SUPPLY VOLTAGE (V)

520 MHz

IDQ, BIAS CURRENT (mA)

480 MHz

500 MHz

VDD= 12.5 V
Pin= 21.7 dBm

500 MHz

520 MHz

Idq= 150 mA
Pin= 21.7 dBm

8/28

PD55008-E, PD55008S-E Typical performance

PD55008

Figure 13. Output power vs. gate-source

voltage

Table 6. Output power vs. input power

10

12

10

8

6

4

2

Pout, OUTPUT POWER (W)

0

01234

Figure 14. Drain efficiecy vs. output power Figure 15. Input return loss vs. output power

60

VGS, GATE-SOURCE VOLTAGE (V)

500 MHz

50

40

30

Drain efficiency (%)

20

10

123456789

Output Power (W)

850 MHz

800 MHz

480 MHz

520 MHz

VDD= 12.5 V
Pin= 21.7 dBm

900 MHz

Vdd = 12.5V

Idq = 250mA

8

6

4

Output Power (W)

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6

0

-5

-10

-15

-20

Input Return Loss (dB)

800 MHz

900 MHz

850 MHz

-25

-30
0123456789

800 MHz

Input Power (W)

Output Power (W)

850 MHz

900 MHz

Vdd = 12.5V

Idq = 250mA

Vdd = 12.5V

Idq = 250mA

9/28