STMicroelectronics MSC83303 Schematic [ru]
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMIT T ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
@3.0GHz
3.0 W MIN. WI TH 7.0 dB GAIN
=
:1 @ RATED
∞
PACKAGE
MSC83303
.250 2LF L (S01 0)
hermeticallysealed
ORDER CODE
MSC83303
PIN CONNECTION
DESC RIPTION
The MSC83303 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C) 10.0 W
Device Current* 540 mA
Collector-Supply Voltage* 30 V
Junction Temperature 200
Storage Temperature − 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
83303
°
C
°
C
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
September 2, 1994
Junction-Case Thermal Resistance* 12
°
C/W
1/5
MS C83 303
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CBO
h
FE
= 1mA IE=0mA 45 — — V
= 1mA IC=0 mA 3.5 — — V
= 5mA RBE= 10 Ω 45 — — V
VCB= 28 V — — 0.5 mA
VCE= 5V IC=200 mA 30 — 300 —
DYNAMIC
Symbol Test Cond itions
P
OUT
η
P
C
OB
f = 3.0 GHz P
cf=3.0 GHz P
f = 3.0 GHz P
G
f = 1 MHz V
0.79 W V
=
IN
0.79 W V
=
IN
0.79 W V
=
IN
28 V — — 5 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 2.5 2.8 — W
=
CC
28 V 30 33 — %
=
CC
28 V 5.0 5.5 — dB
=
CC
Unit
Unit
TYPICA L PERFO R MA NCE
TYPICAL POWER OUTPUT
vs FREQUENCY
TYPICAL COLLECTOR EFFICIENCY
vs FREQUENCY
PERCENT POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
2/5
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