STMicroelectronics MSC83301 Schematic [ru]
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.VSWR CAPABILITY
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
@3.0GHz
1.0 W MIN . WITH 7. 0 dB G AI N
=
:1 @ RATED
∞
PACKAGE
MSC83301
.250 2LF L (S010)
hermetically sealed
ORDER CODE
MSC83301
PIN CONNECTION
DESC RIPTIO N
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C) 6.0 W
Device Current* 200 mA
Collector-Supply Voltage* 30 V
Junction Temperature 200
Storage Temperature − 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
83301
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonlyto rated RF amplifier operation
September 2, 1994
Junction-Case Thermal Resistance* 25
°
C/W
1/5
MS C83 301
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CBO
h
FE
= 1mA IE=0mA 45 — — V
= 1mA IC=0 mA 3.5 — — V
= 5mA RBE= 10 Ω 45 — — V
VCB= 28V — — 0.5 mA
VCE= 5V IC=100 mA 30 — 300 —
DYNAMIC
Symbol Test C onditi ons
P
OUT
η
P
C
OB
f = 3.0 GHz P
cf=3.0 GHz P
f = 3.0 GHz P
G
f = 1 MHz V
0.20 W V
=
IN
0.20 W V
=
IN
0.20 W V
=
IN
28 V — — 3.5 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 1.0 1.3 — W
=
CC
28 V 33 36 — %
=
CC
28 V 7.0 8.1 — dB
=
CC
Unit
Unit
TYPICA L PERFOR MA NCE
TYPICAL POWER OUTPUT vs
FREQUENCY
TYPICAL COLLECTOR
EFFICI ENCY vs FREQ U ENCY
PERCENT POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
2/5
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