The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 4.DC current gain for NPN typeFigure 5.DC current gain for PNP type
h
FE
AM00696v1
1000
Tj= -40 °C
Tj= 25 °C
100
Tj=125 °C
VCE= 3 V
10
0.01
0.1
1
Ic(A)
Figure 6.Collector-emitter saturation voltage
for NPN type
V
CE(sat)
(V)
1.4
1
AM00698v1
hFE= 250
h
FE
AM00697v1
1000
Tj= -40 °C
Tj= 25 °C
100
Tj=125 °C
VCE= -3 V
10
-0.01
-0.1
-1
Ic(A)
Figure 7.Collector-emitter saturation voltage
for PNP type
V
CE(sat)
(V)
hFE= 250
-1.4
-1
AM00699v1
0.6
Tj= -40 °C
Tj= 25 °C
-0.6
Tj=125 °C
0.2
0.1
1
Ic(A)
-0.2
-0.1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-1
Ic(A)
Doc ID 3541 Rev 115/12
Electrical characteristicsMJD122, MJD127
Figure 8.Base-emitter saturation voltage for
V
BE(sat)
(V)
NPN type
hFE= 250
2.0
1.5
1.0
0.5
0.1
AM00700v1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
1
Ic(A)
Figure 10. Base-emitter on voltage for NPN
V
type
AM03262v1
BE(on)
(V)
VCE= 3 V
2.0
Figure 9.Base-emitter saturation voltage for
PNP type
V
BE(sat)
(V)
-2.0
-1.5
-1.0
-0.5
-0.1
hFE= 250
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-1
AM03261v1
Ic(A)
Figure 11. Base-emitter on voltage for PNP
type
V
BE(on)
(V)
-2.0
VCE= -3 V
AM03263v1
1.5
1.0
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
0.5
0.1
1
Figure 12. Resistive load switching times for
NPN type (on)
t(ns)
Vcc= 30 V
hFE=250
Vbeo= - 5 V
Ibon= - Ibo
100
10
1
0
Delay time
Rise time
3
4
2
5
Ic(A)
AM03264v1
Ic(A)
-1.5
-1.0
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
-0.5
- 0.1
-1
Ic(A)
Figure 13. Resistive load switching times for
PNP type (on)
t(ns)
100
10
0
Vcc= -30 V
hFE=250
Vbeo= 5 V
-Ibon= Ibo
-1
-2
-3
Delay time
Rise time
-4
-5
AM03265v1
Ic(A)
6/12 Doc ID 3541 Rev 11
MJD122, MJD127Electrical characteristics
Figure 14. Resistive load switching times for
NPN type (off)
t(ns)
AM03266v1
Figure 15. Resistive load switching times for
PNP type (off)
t(ns)
Vcc= -30 V
hFE=250
Vbeo= 5 V
-Ibon= Ibo
Vcc= 30 V
hFE=250
Vbeo= - 5 V
1000
1000
Ibon= - Ibo
100
Storage time
Fall time
1
0
3
4
2
5
Ic(A)
100
-1
0
-2
-3
Storage time
Fall time
-4
-5
Figure 16. Capacitances for NPN typeFigure 17. Capacitances for PNP type
C(pF)
F= 0.1 MHz
C
CB
AM03269v1
C(pF)
F= 0.1 MHz
C
CB
AM03267v1
Ic(A)
AM03268v1
100
C
EB
10
0.01
0.1
1
10
VR(V)
100
10
0.01
C
EB
0.1
1
10
VR(V)
Doc ID 3541 Rev 117/12
Test circuitsMJD122, MJD127
3 Test circuits
Figure 18. Resistive load switching for NPN type
1. Fast electronic switch
2. Non-inductive resistor
Figure 19. Resistive load switching for PNP type
1. Fast electronic switch
2. Non-inductive resistor
8/12 Doc ID 3541 Rev 11
MJD122, MJD127Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 3541 Rev 119/12
Package mechanical dataMJD122, MJD127
DIM.
mm.
min.typmax.
A2.202.40
A10.901.10
A20.030.23
b0.640.90
b45.205.40
c0.450.60
c20.480.60
D6.006.20
D15.10
E6.406.60
E14.70
e2.28
e14.404.60
H9.3510.10
L1
L12.80
L20.80
L40.601
R0.20
V20
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
10/12 Doc ID 3541 Rev 11
MJD122, MJD127Revision history
5 Revision history
Table 5.Document revision history
DateRevisionChanges
01-Aug-20028
01-Oct-20079Collector current limits have been improved
03-Oct-200710Package mechanical data updated
21-Apr-200911
The device MJD127 has been inserted
Section 2.1: Electrical characteristics (curves) has been updated
Doc ID 3541 Rev 1111/12
MJD122, MJD127
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