The M48T02/12 TIMEKEEPER® RAM is a 2 Kb x 8 non-volatile static RAM and real-time
clock which is pin and functional compatible with the DS1642.
A special 24-pin, 600 mil DIP CAPHAT
quartz crystal and a long life lithium button cell to form a highly integrated battery-backed
memory and real-time clock solution.
The M48T02/12 button cell has sufficient capacity and storage life to maintain data and
clock functionality for an accumulated time period of at least 10 years in the absence of
power over the operating temperature range.
The M48T02/12 is a non-volatile pin and function equivalent to any JEDEC standard
2 Kb x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets,
providing the non-volatility of PROMs without any requirement for special WRITE timing or
limitations on the number of WRITEs that can be performed.
Figure 1.Logic diagram
™
package houses the M48T02/12 silicon with a
V
CC
11
A0-A10
W
E
G
Table 1.Signal names
A0-A10Address inputs
DQ0-DQ7Data inputs / outputs
EChip enable
GOutput enable
WWRITE enable
V
CC
V
SS
Supply voltage
Ground
M48T02
M48T12
V
SS
8
DQ0-DQ7
AI01027
Doc ID 2410 Rev 95/25
DescriptionM48T02, M48T12
Figure 2.DIP connections
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ2
SS
1
2
3
4
5
6
7
8
9
10
11
12
M48T02
M48T12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A8
A9
W
G
A10
E
DQ7
DQ6
DQ5DQ1
DQ4
DQ3V
AI01028
Figure 3.Block diagram
32,768 Hz
CRYSTAL
LITHIUM
CELL
OSCILLATOR AND
CLOCK CHAIN
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
V
CC
POWER
V
PFD
BOK
8 x 8 BiPORT
SRAM ARRAY
2040 x 8
SRAM ARRAY
V
SS
A0-A10
DQ0-DQ7
E
W
G
AI01329
6/25Doc ID 2410 Rev 9
M48T02, M48T12Operation modes
2 Operation modes
As Figure 3 on page 6 shows, the static memory array and the quartz controlled clock
oscillator of the M48T02/12 are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with addresses 7F8h-7FFh. The clock locations
contain the year, month, date, day, hour, minute, and second in 24-hour BCD format.
Corrections for 28, 29 (leap year - valid until 2100), 30, and 31 day months are made
automatically.
Byte 7F8h is the clock control register. This byte controls user access to the clock
information and also stores the clock calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/WRITE memory cells. The M48T02/12 includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T02/12 also has its own power-fail detect circuit. The control circuitry constantly
monitors the single 5 V supply for an out of tolerance condition. When V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
CC
. As V
approximately 3 V, the control circuitry connects the battery which maintains data and clock
operation until valid power returns.
is out of
CC
falls below
CC
Table 2.Operating modes
ModeV
Deselect
WRITEV
READV
READV
Deselect
Deselect≤ V
1. See Table 11 on page 20 for details.
Note:X = V
or VIL; VSO = Battery backup switchover voltage.
IH
4.75 to 5.5 V
4.5 to 5.5 V
V
PFD
2.1 READ mode
The M48T02/12 is in the READ mode whenever W (WRITE enable) is high and E (chip
enable) is low. The device architecture allows ripple-through access of data from eight of
16,384 locations in the static storage array. Thus, the unique address specified by the 11
Address Inputs defines which one of the 2,048 bytes of data is to be accessed. Valid data
will be available at the data I/O pins within address access time (t
address input signal is stable, providing that the E
the E
and G access times are not met, valid data will be available after the latter of the chip
enable access time (t
CC
or
VSO to
(min)
SO
ELQV
EGWDQ0-DQ7Power
XXHigh ZStandby
XVILD
V
IL
V
IH
(1)
(1)
V
IH
IL
IL
IL
XXXHigh ZCMOS standby
XXXHigh ZBattery backup mode
) or output enable access time (t
IN
V
IH
V
IH
D
OUT
High ZActive
) after the last
AVQ V
Active
Active
and G access times are also satisfied. If
).
GLQV
Doc ID 2410 Rev 97/25
Operation modesM48T02, M48T12
The state of the eight three-state data I/O signals is controlled by E and G. If the outputs are
activated before t
the address inputs are changed while E
for output data hold time (t
, the data lines will be driven to an indeterminate state until t
AVQ V
and G remain active, output data will remain valid
) but will go indeterminate until the next address access.
AXQX
AVQ V
. If
Figure 4.READ mode AC waveforms
tAVAV
A0-A10
E
G
DQ0-DQ7
Note:WRITE enable (W
tAVQVtAXQX
tELQV
tELQX
tGLQV
tGLQX
) = High.
VAL ID
tEHQZ
tGHQZ
VAL ID
Table 3.READ mode AC characteristics
M48T02/M48T12
SymbolParameter
t
AVAV
t
AVQ V
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
EHQZ
t
GHQZ
t
AXQX
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted).
READ cycle time70150200ns
Address valid to output valid70150200ns
Chip enable low to output valid70150200ns
Output enable low to output valid357580ns
Chip enable low to output transition51010ns
Output enable low to output transition555ns
Chip enable high to output Hi-Z253540ns
Output enable high to output Hi-Z253540ns
Address transition to output transition1055ns
(1)
MinMaxMinMaxMinMax
AI01330
Unit–70–150–200
8/25Doc ID 2410 Rev 9
M48T02, M48T12Operation modes
2.2 WRITE mode
The M48T02/12 is in the WRITE mode whenever W and E are active. The start of a WRITE
is referenced from the latter occurring falling edge of W
earlier rising edge of W
must return high for a minimum of t
or E. The addresses must be held valid throughout the cycle. E or W
from chip enable or t
EHAX
to the initiation of another READ or WRITE cycle. Data-in must be valid t
end of WRITE and remain valid for t
afterward. G should be kept high during WRITE
WHDX
cycles to avoid bus contention; although, if the output bus has been activated by a low on E
and G
, a low on W will disable the outputs t
WLQZ
Figure 5.WRITE enable controlled, WRITE AC waveform
tAVAV
or E. A WRITE is terminated by the
from WRITE enable prior
WHAX
DVW H
after W falls.
prior to the
A0-A10
tAVEL
E
tAVWL
W
tWLQZ
DQ0-DQ7
VAL ID
tAVWH
tWLWH
tDVWH
Figure 6.Chip enable controlled, WRITE AC waveforms
tAVAV
A0-A10
tAVEL
VAL ID
tAVEH
tELEH
tWHAX
tWHQX
tWHDX
DATA INPUT
AI01331
tEHAX
E
W
DQ0-DQ7
tAVWL
tEHDX
DATA INPUT
tDVEH
AI01332B
Doc ID 2410 Rev 99/25
Operation modesM48T02, M48T12
Table 4.WRITE mode AC characteristics
M48T02/M48T12
SymbolParameter
(1)
Unit–70–150–200
Min Max Min Max Min Max
t
AVAV
t
AVW L
t
AVEL
t
WLWH
t
ELEH
t
WHAX
t
EHAX
t
DVW H
t
DVEH
t
WHDX
t
EHDX
t
WLQZ
t
AVW H
t
AVEH
t
WHQX
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
WRITE cycle time70150200ns
Address valid to WRITE enable low000ns
Address valid to chip enable low000ns
WRITE enable pulse width5090120ns
Chip enable low to chip enable high5590120ns
WRITE enable high to address transition01010ns
Chip enable high to address transition01010ns
Input valid to WRITE enable high304060ns
Input valid to chip enable high304060ns
WRITE enable high to input transition555ns
Chip enable high to input transition555ns
WRITE enable low to output Hi-Z255060ns
Address valid to WRITE enable high60120140ns
Address valid to chip enable high60120140ns
WRITE enable high to output transition51010ns
2.3 Data retention mode
With valid VCC applied, the M48T02/12 operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself when V
falls within the V
CC
PFD
(max), V
(min) window. All outputs
PFD
become high impedance, and all inputs are treated as “don't care.”
Note:A power failure during a WRITE cycle may corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below V
user can be assured the memory will be in a write protected state, provided the V
is not less than t
into the deselect window during the time the device is sampling V
. The M48T02/12 may respond to transient noise spikes on V
F
. Therefore, decoupling
CC
(min), the
PFD
CC
fall time
CC
that reach
of the power supply lines is recommended.
The power switching circuit connects external V
when V
low, an internal battery not oK (BOK
power up. If the BOK
rises above VSO. As VCC rises, the battery voltage is checked. If the voltage is too
CC
) flag will be set. The BOK flag can be checked after
flag is set, the first WRITE attempted will be blocked. The flag is
to the RAM and disconnects the battery
CC
automatically cleared after the first WRITE, and normal RAM operation resumes. Figure 7
on page 11 illustrates how a BOK
check routine could be structured.
For more information on a battery storage life refer to the application note AN1012.
10/25Doc ID 2410 Rev 9
M48T02, M48T12Operation modes
Figure 7.Checking the BOK flag status
POWER-UP
READ DATA
AT ANY ADDRESS
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
READ DATA
AT SAME
ADDRESS AGAIN
COMPLEMENT
OF FIRST
(BATTERY OK)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
CONTINUE
IS DATA
READ?
YES
NO
(BATTERY LOW)
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
AI00607
Doc ID 2410 Rev 911/25
Clock operationsM48T02, M48T12
3 Clock operations
3.1 Reading the clock
Updates to the TIMEKEEPER® registers should be halted before clock data is read to
prevent reading data in transition. The BiPORT™ TIMEKEEPER cells in the RAM array are
only data registers and not the actual clock counters, so updating the registers can be halted
without disturbing the clock itself.
Updating is halted when a '1' is written to the READ bit, the seventh bit in the control
register. As long as a '1' remains in that position, updating is halted. After a halt is issued,
the registers reflect the count; that is, the day, date, and the time that were current at the
moment the halt command was issued.
All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an
update in progress. Updating is within a second after the bit is reset to a '0.'
3.2 Setting the clock
The eighth bit of the control register is the WRITE bit. Setting the WRITE bit to a '1,' like the
READ bit, halts updates to the TIMEKEEPER registers. The user can then load them with
the correct day, date, and time data in 24-hour BCD format (on Table5 on page13).
Resetting the WRITE bit to a '0' then transfers the values of all time registers (7F9-7FF) to
the actual TIMEKEEPER counters and allows normal operation to resume. The FT bit and
the bits marked as '0' in Table 5 on page 13 must be written to '0' to allow for normal
TIMEKEEPER and RAM operation.
See the application note AN923, “TIMEKEEPER
information on century rollover.
®
rolling into the 21st century” for
12/25Doc ID 2410 Rev 9
M48T02, M48T12Clock operations
Table 5.Register map
Address
Data
D7D6D5D4D3D2D1D0
7FF10 years YearYear00-99
7FE00010 MMonthMonth01-12
7FD0010 dateDateDate01-31
7FC0FT000DayDay01-07
7FB0010 hoursHoursHours00-23
7FA010 minutesMinutesMinutes00-59
7F9ST10 secondsSecondsSeconds00-59
7F8WRSCalibration Control
Function/range
BCD format
Keys:
S = SIGN bit
FT = FREQUENCY TEST bit (set to '0' for normal clock operation)
R = READ bit
W = WRITE bit
ST = STOP bit
0 = Must be set to '0'
3.3 Stopping and starting the oscillator
The oscillator may be stopped at any time. If the device is going to spend a significant
amount of time on the shelf, the oscillator can be turned off to minimize current drain on the
battery. The STOP bit is the MSB of the seconds register. Setting it to a '1' stops the
oscillator. The M48T02/12 is shipped from STMicroelectronics with the STOP bit set to a '1.'
When reset to a '0,' the M48T02/12 oscillator starts within one second.
3.4 Calibrating the clock
The M48T02/12 is driven by a quartz-controlled oscillator with a nominal frequency of
32,768 Hz. A typical M48T02/12 is accurate within 1 minute per month at 25°C without
calibration. The devices are tested not to exceed ± 35 ppm (parts per million) oscillator
frequency error at 25°C, which equates to about ±1.53 minutes per month.
The oscillation rate of any crystal changes with temperature. Figure 8 on page 15 shows the
frequency error that can be expected at various temperatures. Most clock chips compensate
for crystal frequency and temperature shift error with cumbersome “trim” capacitors. The
M48T02/12 design, however, employs periodic counter correction. The calibration circuit
adds or subtracts counts from the oscillator divider circuit at the divide by 256 stage, as
shown in Figure 9 on page 15. The number of times pulses are blanked (subtracted,
negative calibration) or split (added, positive calibration) depends upon the value loaded into
the five-bit calibration byte found in the control register. Adding counts speeds the clock up,
subtracting counts slows the clock down.
The calibration byte occupies the five lower order bits in the control register. This byte can
be set to represent any value between 0 and 31 in binary form. The sixth bit is the sign bit;
Doc ID 2410 Rev 913/25
Clock operationsM48T02, M48T12
'1' indicates positive calibration, '0' indicates negative calibration. Calibration occurs within a
64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second
either shortened by 128 or lengthened by 256 oscillator cycles. If a binary '1' is loaded into
the register, only the first 2 minutes in the 64 minute cycle will be modified; if a binary 6 is
loaded, the first 12 will be affected, and so on.
Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator
cycles for every 125,829,120 actual oscillator cycles; that is +4.068 or –2.034 ppm of
adjustment per calibration step in the calibration register. Assuming that the oscillator is in
fact running at exactly 32,768 Hz, each of the 31 increments in the calibration byte would
represent +10.7 or –5.35 seconds per month which corresponds to a total range of +5.5 or
–2.75 minutes per month.
Two methods are available for ascertaining how much calibration a given M48T02/12 may
require. The first involves simply setting the clock, letting it run for a month and comparing it
to a known accurate reference (like WWV broadcasts). While that may seem crude, it allows
the designer to give the end user the ability to calibrate his clock as his environment may
require, even after the final product is packaged in a non-user serviceable enclosure. All the
designer has to do is provide a simple utility that accesses the calibration byte.
The second approach is better suited to a manufacturing environment, and involves the use
of some test equipment. When the Frequency Test (FT) bit, the seventh-most significant bit
in the day register, is set to a '1,' and the oscillator is running at 32,768 Hz, the LSB (DQ0) of
the seconds register will toggle at 512 Hz. Any deviation from 512 Hz indicates the degree
and direction of oscillator frequency shift at the test temperature. For example, a reading of
512.01024 Hz would indicate a +20 ppm oscillator frequency error, requiring
–10 (WR001010) to be loaded into the calibration byte for correction.
Note:Setting or changing the calibration byte does not affect the frequency test output frequency.
The device must be selected and addresses must be stable at address 7F9 when reading
the 512 Hz on DQ0.
The FT bit must be set using the same method used to set the clock: using the WRITE bit.
The LSB of the seconds register is monitored by holding the M48T02/12 in an extended
READ of the seconds register, but without having the READ bit set. The FT bit MUST be
reset to '0' for normal clock operations to resume.
Note:It is not necessary to set the WRITE bit when setting or resetting the frequency test bit (FT)
or the stop bit (ST).
For more information on calibration, see the application note AN924, “TIMEKEEPER
®
calibration.”
14/25Doc ID 2410 Rev 9
M48T02, M48T12Clock operations
Figure 8.Crystal accuracy across temperature
ppm
20
0
-20
-40
ΔF
-60
-80
-100
0510152025303540455055606570
Figure 9.Clock calibration
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
= -0.038(T - T
F
ppm
C
T0 = 25 °C
)2 ± 10%
0
2
°C
AI02124
AI00594B
Doc ID 2410 Rev 915/25
Clock operationsM48T02, M48T12
3.5 VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure 10 on page 16) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
to VSS (cathode connected to VCC, anode to VSS). Schottky diode
CC
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
V
CC
bus. These transients can be reduced if
CC
that drive it to values below VSS by as much as
CC
V
CC
bus. The energy stored in the
CC
0.1μFDEVICE
V
SS
AI02169
16/25Doc ID 2410 Rev 9
M48T02, M48T12Maximum ratings
4 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6.Absolute maximum ratings
SymbolParameterValueUnit
T
A
T
STG
(1)(2)
T
SLD
V
IO
V
CC
I
O
P
D
1. Soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. Furthermore, the devices
shall not be exposed to IR reflow nor preheat cycles (as performed as part of wave soldering). ST
recommends the devices be hand-soldered or placed in sockets to avoid heat damage to the batteries.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
Ambient operating temperature0 to 70°C
Storage temperature (VCC off, oscillator off)–40 to 85°C
Lead solder temperature for 10 seconds260°C
Input or output voltages–0.3 to 7V
Supply voltage–0.3 to 7V
Output current20mA
Power dissipation1W
Caution:Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Doc ID 2410 Rev 917/25
DC and AC parametersM48T02, M48T12
5 DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 7.Operating and AC measurement conditions
ParameterM48T02M48T12Unit
Supply voltage (VCC)4.75 to 5.54.5 to 5.5V
Ambient operating temperature (T
Load capacitance (CL)100100pF
Input rise and fall times≤ 5≤ 5ns
Input pulse voltages0 to 30 to 3V
Input and output timing ref. voltages1.51.5V
Note:Output Hi-Z is defined as the point where data is no longer driven.
)0 to 700 to 70°C
A
Figure 11. AC testing load circuit
5V
1.8kΩ
DEVICE
UNDER
TEST
1kΩ
CL includes JIG capacitance
OUT
CL = 100pF
Table 8.Capacitance
SymbolParameter
C
C
IO
1. Effective capacitance measured with power supply at 5 V. Sampled only, not 100% tested.
2. At 25 °C, f = 1 MHz.
3. Outputs deselected.
Input capacitance-10pF
IN
(3)
Input / output capacitance-10pF
(1)(2)
MinMaxUnit
AI01019
18/25Doc ID 2410 Rev 9
M48T02, M48T12DC and AC parameters
Table 9.DC characteristics
SymbolParameterTest condition
(1)
MinMaxUnit
I
LI
I
LO
I
CC
I
CC1
I
CC2
V
IL
V
IH
V
OL
V
OH
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted).
2. Outputs deselected.
3. Measured with control bits set as follows: R = '1'; W, ST, FT = '0.'
Input leakage current0V ≤ VIN ≤ V
(2)
Output leakage current0V ≤ V
OUT
≤ V
CC
CC
Supply currentOutputs open80mA
(3)
Supply current (standby) TTLE = V
(3)
Supply current (standby) CMOSE = VCC – 0.2 V3mA
IH
Input low voltage–0.30.8V
Input high voltage2.2VCC + 0.3V
Output low voltageIOL = 2.1 mA0.4V
Output high voltageIOH = –1 mA2.4V
±1µA
±1µA
3mA
Figure 12. Power down/up mode AC waveforms
V
CC
V
(max)
PFD
V
(min)
PFD
VSO
INPUTS
tF
tFB
tDR
DON'T CARE
NOTE
tR
trectPDtRB
RECOGNIZEDRECOGNIZED
OUTPUTS
VAL IDVAL ID
(PER CONTROL INPUT)
HIGH-Z
(PER CONTROL INPUT)
Note:Inputs may or may not be recognized at this time. Caution should be taken to keep E
V
rises past V
CC
rises above V
PFD
(min). Some systems may perform inadvertent WRITE cycles after VCC
PFD
(min) but before normal system operations begin. Even though a power on
reset is being applied to the processor, a reset condition may not occur until after the system
clock is running.
Doc ID 2410 Rev 919/25
AI00606
high as
DC and AC parametersM48T02, M48T12
Table 10.Power down/up AC characteristics
SymbolParameter
(1)
MinMaxUnit
t
PD
(2)
t
F
t
FB
t
R
t
RB
t
rec
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. V
PFD
until 200 µs after V
3. V
PFD
E or W at VIH before power down0-µs
V
(max) to V
(3)
(max) to V
PFD
V
(min) to VSS VCC fall time10-µs
PFD
V
(min) to V
PFD
VSS to V
E or W at V
PFD
(min) to VSS fall time of less than tFB may cause corruption of RAM data.
(min) VCC rise time1-µs
PFD
IH
(min) fall time of less than tF may result in deselection/write protection not occurring
passes V
CC
(min) VCC fall time300-µs
PFD
(max) VCC rise time0-µs
PFD
before power-up2-ms
(min).
PFD
Table 11.Power down/up trip points DC characteristics
SymbolParameter
V
PFD
V
SO
t
DR
1. All voltages referenced to VSS.
2. Valid for ambient operating temperature: T
noted).
3. At 25 °C; VCC = 0 V.
Power-fail deselect voltage
Battery backup switchover voltage3.0V
(3)
Expected data retention time10YEARS
(1)(2)
MinTypMaxUnit
M48T024.54.64.75V
M48T124.24.34.5V
= 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
A
20/25Doc ID 2410 Rev 9
M48T02, M48T12Package mechanical data
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
02-Aug-20108Reformatted document; updated Section 4, Ta b le 1 2 , 13.
07-Jun-20119
change (Ta bl e 1 0 )
rec
Reformatted; lead-free (Pb-free) package information update (Ta bl e 6 ,
13)
Added lead-free second level interconnect information to cover page and
Section 6: Package mechanical data.
Added Section 8: Environmental information; updated text in Section 6:
Package mechanical data; minor formatting changes.
Updated footnote 1 of Table 6: Absolute maximum ratings; updated
Section 8: Environmental information.
24/25Doc ID 2410 Rev 9
M48T02, M48T12
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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