DMOS DUAL FULL BRIDGE DRIVER
■
OPERATING SUPPLY VOLTAGE FROM 8 TO 52V
■
5.6A OUTPUT PEAK CURRENT (2.8A DC)
■
R
■
OPERATING FREQUENCY UP TO 100KHz
■
NON DISSIPATIVE OVERCURRENT
PROTECTION
■
PARALLEL ED OPERATION
■
CROSS CONDUCTION PROTECTION
■
THERMAL SHUTDOWN
■
UNDER VOLTAGE LOCKOUT
■
INTEGRATED FAST FREE WHEELING DIODES
TYPICAL APPLICATIONS
■
BIPOLAR STEPPER MOTOR
■
DUAL OR QUAD DC MOTOR
DESCRIPTION
The L6205 is a DMOS Dual Full Bridge designed for
motor control applications, realized in MultiPower-
0.3Ω TYP. VA L U E @ Tj = 25 °C
DS(ON)
L6205
PowerDIP20
(16+2+2)
BCD technology, which combines isolated DMOS
Power Transistors with CMOS and bipolar c ir cuits on
the same chip. Available in PowerDIP20 (16+2+2),
PowerSO20 and SO20(16+2+2) packages, the
L6205 features a non-dissipative protection of the
high side PowerMOSFETs and thermal shutdown.
PowerSO20
ORDERING NUMBERS:
L6205N (PowerDIP 20)
L6205PD (PowerSO20)
L6205D (SO20)
SO20
(16+2+2)
BLOCK DIAGRAM
VBOOT
VCP
EN
IN1
IN2
EN
IN1
IN2
A
A
A
B
B
B
V
BOOT
CHARGE
PUMP
VOLTAGE
REGULA TOR
OCD
THERMAL
PROTECTION
10V
5V
OCD
VS
V
BOOT
OVER
A
B
CURRENT
DETECTION
GA TE
LOGIC
OVER
CURRENT
DETECTION
GA TE
LOGIC
10V 10V
V
BOOT
BRIDGE A
BRIDGE B
A
OUT1
OUT2
SENSE
V
S
B
OUT1
OUT2
SENSE
A
A
A
B
B
B
April 2002
D99IN1091A
1/18
L6205
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Test conditions Value Unit
V
V
IN,VEN
V
SENSE
V
BOOT
I
S(peak)
Supply Voltage 60 V
S
Input and Enable Voltage Range -0.3 to +7 V
DC Sensing Voltage Range -1 to +4 V
Bootstrap Peak Voltage VS + 10 V
Pulsed Supply Current (for each
t
< 1ms 7.1 A
PULSE
VS pin), internally limited by the
overcurrent protection
I
S
DC Supply Current (for each VS
2.8 A
pin)
V
OD
Differential Voltage Between
VSA, OUT1A, OUT2A, SENSEA and
VSB, OUT1B, OUT2B, SENSE
, T
T
stg
Storage and Operating
OP
VSA = VSB = 60V
SENSEA =
B
60 V
SENSEB = GND
-40 to 150 °C
Temperature Range
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter MIN MAX Unit
V
V
V
SENSE
I
OUT
F
T
S
OD
j
sw
Supply Voltage 12 52 V
Differential Voltage Between
52 V
VSA, OUT1A, OUT2A, SENSEA and
VSB, OUT1B, OUT2B, SENSE
B
Sensing voltage
(pulsed tw<t
(DC)
)
rr
-6
-1
6
1
DC Output Current 2.8 A
Operating Junction Temperature -25 +125 °C
Commutation Frequency 100 kHz
V
V
2/18
L6205
THERMA L D ATA
Symbol Description PowerDIP20 SO20 PowerSO20 Unit
R
th-j-pins
R
th-j-case
R
th-j-amb1
R
th-j-amb1
R
th-j-amb1
R
th-j-amb2
<1> Mounted on a multilayer FR4 PCB with a dis sipating copp er surface on the bottom side of 6 cm2 (with a thi ckness of 35 µm).
<2> Mounted on a multilayer FR4 PCB with a dis sipating copp er surface on the top side of 6 cm2 (with a thickness of 35 µm).
<3> Mounted on a multilayer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm), 16 via holes
and a groun d l ayer.
<4> Mounted on a multilayer FR4 PCB withou t any heat sinkin g surface on the board.
MaximumThermal Resistance Junction-Pins 12 14 - °C/W
Maximum Thermal Resistance Junction-Case - - 1 °C/W
MaximumThermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Ambient
MaximumThermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Ambient
1
2
3
4
40 51 - °C/W
--35°C/W
--15°C/W
56 77 62 °C/W
PIN CONNECTIONS
IN1
IN2
SENSE
OUT1
GND GND
GND
OUT1
SENSE
IN1
IN2
1
A
2
A
3
A
4
A
5
6
7
B
8
B
9
B
10
B
PowerDIP20/SO20
(Top View)
D99IN1093A
20
19
18
17
16
14
13
12
11
EN
A
VCP
OUT2
VS
A
GND15
VS
B
OUT2
VBOOT
EN
B
GND GND
VS
A
A
OUT2
A
VCP
EN
A
IN1
A
IN2
A
B
SENSE
OUT1
A
A
GND
1
2
3
4
5
6
7
8
9
D99IN1092A
20
19
18
17
16
15
14
13
12
11
VS
B
OUT2
VBOOT
EN
B
IN2
B
IN1
B
SENSE
OUT1
GND10
B
B
B
PowerSO20
3/18
L6205
PIN DESCRIPTION
PACKAGE
SO20/
PowerDIP20
PowerSO20
PIN # PIN #
1 6 IN1
2 7 IN2
3 8 SENSE
4 9 OUT1
5, 6, 15, 16 1, 10, 11,
20
7 12 OUT1
8 13 SENSE
9 14 IN1
10 15 IN2
11 16 EN
Name Type Function
A
A
Logic Input Bridge A Logic Input 1.
Logic Input Bridge A Logic Input 2.
Power Supply Bridge A Source Pin. This pin must be connected to Power
A
Ground directly or through a sensing power resistor.
Power Output Bridge A Output 1.
A
GND GND Signal Ground terminals. In PowerDIP and SO packages,
these pins are also used for heat dissipation toward the
PCB.
Power Output Bridge B Output 1.
B
Power Supply Bridge B Source Pin. This pin must be connected to Power
B
Ground directly or through a sensing power resistor.
B
B
B
Logic Input Bridge B Logic Input 1.
Logic Input Bridge B Logic Input 2.
Logic Input (*) Bridge B Enable. LOW logic level switches OFF all Power
MOSFETs of Bridge B. This pin is also connected to the
collector of the Overcurrent and Thermal Protection
transistor to implement over current protection.
If not used, it has to be connected to +5V through a
resistor.
12 17 VBOOT Supply
Voltage
13 18 OUT2
14 19 VS
17 2 VS
18 3 OUT2
Power Output Bridge B Output 2.
B
Power Supply Bridge B Power Supply Voltage. It must be connected to
B
Power Supply Bridge A Power Supply Voltage. It must be connected to
A
Power Output Bridge A Output 2.
A
Bootstrap Voltage needed for driving the upper
PowerMOSFETs of both Bridge A and Bridge B.
the supply voltage together with pin VS
the supply voltage together with pin VS
.
A
.
B
19 4 VCP Output Charge Pump Oscillator Output.
20 5 EN
Logic Input (*) Bridge A Enable. LOW logic level switches OFF all Power
A
MOSFETs of Bridge A. This pin is also connected to the
collector of the Overcurrent and Thermal Protection
transistor to implement over current protection.
If not used, it has to be connected to +5V through a
resistor.
(*) Also connected at the output drain of the Overc urrent and Th ermal protec tion MOSFET. T herefore, it ha s t o be driven put t i ng in series a
resistor with a value in the range of 500Ω - 22KΩ, recommended 10k
Ω
4/18
L6205
ELECTRICAL CHARACTERISTICS
= 25 °C, Vs = 48V, unless otherwise specified)
(T
amb
Symbol Parameter Test Conditions Min Typ Max Unit
V
Supply Voltage 8 52 V
S
I
Quiescent Supply Current All Bridges OFF; -25°C<Tj <125°C 5.5 10 mA
S
T
Thermal Shutdown Temperature 150 °C
j
Output DMOS Transistors
I
R
DS(ON)
DSS
Leakage Current VS = 52V 10 µA
High-side Switch ON Resistance Tj = 25 °C0.340.4Ω
Low-side Switch ON Resistance Tj = 25 °C 0.28 0.34 Ω
Source Drain Diodes
V
Forward ON Voltage ISD = 2.8A, EN = LOW 1.2 1.4 V
SD
t
Reverse Recovery Time If = 2.8A 300 ns
rr
Forward Recovery Time 200 ns
t
fr
Switching Characteristics
t
D(on)EN
t
D(on)IN
t
t
D(off)EN
t
D(off)IN
Enable to out turn ON delay time
Input to out turn ON delay time
ON
Output rise time
Enable to out turn OFF delay time
Input to out turn OFF delay time
(5)
T
=125 °C 0.53 0.59 Ω
j
Tj =125 °C 0.47 0.53 Ω
(5)
I
=2.8A, Resistive Load 250 ns
LOAD
(5)
I
=2.8A, Resistive Load 600 ns
LOAD
I
=2.8A, Resistive Load 20 105 300 ns
LOAD
(5)
I
=2.8A, Resistive Load 450 ns
LOAD
(5)
I
=2.8A, Resistive Load 500 ns
LOAD
t
OFF
t
dt
f
CP
UVLO comp
V
th(ON)
V
th(OFF)
Logic Input
V
INL
V
INH
I
INH
Output Fall Time
(5)
I
=2.8A, Resistive Load 20 78 300 ns
LOAD
Dead Time Protection 1 µs
Charge pump frequency
-25°C<Tj <125°C 0.75 1 MHz
Turn ON threshold 6.6 7 7.4 V
Turn OFF threshold 5.6 6 6.4 V
Low level logic input voltage -0.3 0.8 V
High level logic input voltage 2 7 V
High level logic input current 5 V Logic Input Voltage 70 µA
5/18
L6205
ELECTRICAL CHARACTERISTICS
(T
= 25 °C, Vs = 48V, unless otherwise specified)
amb
(continued)
Symbol Parameter Test Conditions Min Typ Max Unit
I
Low level logic input current GND Logic Input Voltage -10 µA
INL
Over Current Protection
I
S OVER
Input Supply Over Current
-25°C<Tj <125°C 4 5.6 7.1 A
Protection Threshold
R
OPDR
<(5)> See Fig. 1.
Open Drain ON Resistance I = 4mA 60 Ω
Figure 1. Switching Characteristic Definition
or
I
E
N
N
50%
t
I
OUT
90%
10%
D02IN1348
t
D(OFF)
t
(OFF)
t
D(ON)
t
(ON)
t
6/18
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