ST MICROELECTRONICS L 6202 Datasheet

L6201

L6202 - L6203

DMOS FULL BRIDGE DRIVER

SUPPLYVOLTAGEUP TO 48V
5AMAXPEAKCURRENT (2A max.forL6201)
TOTALRMS CURRENT UP TO

L6201: 1A;L6202:1.5A; L6203/L6201PS:4A
R

DS (ON)

CROSSCONDUCTION PROTECTION
TTL COMPATIBLEDRIVE
OPERATINGFREQUENCYUP TO 100 KHz
THERMALSHUTDOWN
INTERNALLOGIC SUPPLY
HIGHEFFICIENCY

DESCRIPTION

The I.C. is a full bridgedriver for motor controlap­plications realized in Multipower-BCD technology
which combinesisolated DMOSpower transistors
with CMOS and Bipolar circuits on the same chip.
By using mixed technologyit has beenpossibleto
optimize the logic circuitry and thepower stage to
achieve the best possible performance. The
DMOS output transistors can operate at supply
voltages up to 42V and efficiently at high switch-

BLOCK DIAGRAM

0.3 Ω (typicalvalue at 25 °C)

MULTIPOWER BCD TECHNOLOGY

Powerdip 12+3+3

Multiwatt11

ORDERING NUMBERS:

L6201 (SO20)

L6201PS

L6202 (Powerdip18)
L6203 (Multiwatt)

ing speeds. All the logic inputs are TTL, CMOS
andµC compatible.Each channel (half-bridge) of
the device is controlledby a separate logic input,
while a common enable controls both channels.
The I.C. is mountedin three different packages.

SO20 (12+4+4)

PowerSO20

(PowerSO20)

July 1997

This is advanced information on a new product now in development or undergoing evaluation. Details are subjectto change without notice.

1/20

L6201 - L6202 - L6203

PIN CONNECTIONS (Top view)

SO20

GND

N.C.
N.C.

OUT2

V

S

OUT1

BOOT1

IN1

N.C.

GND 10

1
2
3
4
5
6
7
8
9

D95IN216

PowerSO20

20
19
18
17
16
15
14
13
12
11

POWERDIP

GND
N.C.
N.C.
ENABLE
SENSE
Vref
BOOT2
IN2
N.C.
GND

2/20

MULTIWATT11

PINS FUNCTIONS

L6201 - L6202 - L6203

Device

L6201 L6201PS L6202 L6203

1 16 1 10 SENSE A resistor R

Name Function

connected to this pin provides feedback for

motor current control.

sense

2 17 2 11 ENABLEWhen a logic high is present on this pin the DMOS POWER

transistors are enabled to be selectively driven by IN1 and IN2.

3 2,3,9,12,

3 N.C. Not Connected

18,19

4,5 – 4

– 1, 10 5 GND Common Ground Terminal

GND Common Ground Terminal

6

6,7 – 6 GND Common Ground Terminal

8 – 7 N.C. Not Connected
9481OUT2Ouput of 2nd Half Bridge

10592V

s

Supply Voltage
11 6 10 3 OUT1 Output of first Half Bridge
12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
13 8 12 5 IN1 Digital Input from the Motor Controller

14,15 – 13

– 11, 20 14 GND Common Ground Terminal

GND Common Ground Terminal

6

16,17 – 15 GND Common Ground Terminal

18 13 16 7 IN2 Digital Input from the Motor Controller
19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
20 15 18 9 V

ref

Internal voltage reference. A capacitor from this pin to GND is

recommended. The internal Ref. Voltage can source out a

current of 2mA max.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

OD

V

IN,VEN

I

V

sense

V

P

T

stg,Tj

Note 1: Pulse width limitedonly by junction temperature and transient thermal impedance (see thermal characteristics)
Note 2:

Power Supply 52 V

s

Differential Output Voltage (between Out1 and Out2) 60 V
Input or Enable Voltage – 0.3 to + 7 V
Pulsed Output Current for L6201PS/L6202/L6203 (Note 1)

o

– Non Repetitive (< 1 ms) for L6201

for L6201PS/L6202/L6203

DC Output Current for L6201 (Note 1)

5
5

10

1
Sensing Voltage – 1 to + 4 V
Boostrap Peak Voltage 60 V

b

Total Power Dissipation:

tot

=90°C for L6201

T

pins

T

case

T

amb

for L6202

=90°C for L6201PS/L6203

=70°C for L6201(Note 2)

for L6202 (Note 2)
for L6201PS/L6203 (Note 2)

4

5

20

0.9

1.3

2.3

Storage and Junction Temperature – 40 to + 150 °C

Mountedon board with minimized dissipating copper area.

A
A
A
A

W
W
W
W
W
W

3/20

L6201 - L6202 - L6203

THERMAL DATA

–
–

13 (*)

Value

12
60

–

–

3

35

= 0, unless

sens

Symbol Parameter

Rt

h j-pins

Rt

h j-case

Rt

h j-amb

(*) Mounted on aluminiumsubstrate.

Thermal Resistance Junction-pins max
Thermal Resistance Junction Case max.
Thermal Resistance Junction-ambient max.

L6201 L6201PS L6202 L6203

15

–

85

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj=25°C, VS= 42V, V
otherwise specified).

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

s

V

ref

I

REF

I

s

f

c

T

j

T

d

Supply Voltage 12 36 48 V
Reference Voltage I

= 2mA 13.5 V

REF

Output Current 2mA
Quiescent Supply Current EN = H VIN=L

EN = H V
EN = L ( Fig. 1,2,3)

=H

IN

IL=0

10
10

15
15

8

15
Commutation Frequency(*) 30 100 KHz
Thermal Shutdown 150
Dead Time Protection 100 ns

TRANSISTORS

OFF

I

DSS

Leakage Current Fig. 11 Vs=52V 1 mA

ON

R

V

DS(ON)

V

DS

sens

On Resistance Fig. 4,5 0.3 0.55 Ω
Drain Source Voltage Fig. 9

I

DS

I

DS

I

DS

=1A
= 1.2A
=3A

L6201
L6202

L6201PS/0

3

0.3

0.36

0.9

Sensing Voltage – 1 4 V

SOURCEDRAIN DIODE

Unit

°C/W

mA
mA
mA

°

C

V
V
V

V

sd

t

rr

t

fr

Forward ON Voltage Fig. 6a and b

Reverse Recovery Time

Forward Recovery Time 200 ns

LOGIC LEVELS

V

IN L,VEN L

V

IN H,VEN H

I

IN L,IEN L

I

IN H,IEN H

4/20

Input Low Voltage – 0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current VIN,VEN= L –10
Input High Current VIN,VEN=H 30 µA

L6201

=1A

I

SD

= 1.2A L6202 EN = L

I

SD

I

=3A

SD

L
dif

=25A/µs

dt

=1A

I

F

= 1.2A

I

F

=3A

I

F

L6201PS/03

EN = L

EN =

L6201
L6202
L6203

0.9 (**)

0.9 (**)

1.35(**)

300 ns

V
V
V

A

µ

L6201 - L6202 - L6203

ELECTRICALCHARACTERISTICS (Continued)

LOGIC CONTROL TO POWERDRIVETIMING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

) Source Current Turn-off Delay Fig. 12 300 ns

1(Vi

t

) Source Current Fall Time Fig. 12 200 ns

2(Vi

t

) Source Current Turn-on Delay Fig. 12 400 ns

3(Vi

t

) Source Current Rise Time Fig. 12 200 ns

4(Vi

t

) Sink Current Turn-off Delay Fig. 13 300 ns

5(Vi

t

) Sink Current Fall Time Fig. 13 200 ns

6(Vi

t

) Sink Current Turn-on Delay Fig. 13 400 ns

7(Vi

t

) Sink Current Rise Time Fig. 13 200 ns

8(Vi

(*)Limited by power dissipation
(**) Insynchronous rectification the drain-source voltagedrop VDS is shown in fig.4 (L6202/03); typicalvalue for the L6201is of0.3V.

Figure 1: Typical NormalizedISvs.T

Figure 3: Typical NormalizedISvs. V

j

Figure2:

TypicalNormalized QuiescentCurrent

vs. Frequency

S

Figure4: TypicalR

DS (ON)

vs. VS~V

ref

5/20

L6201 - L6202 - L6203

Figure 5: NormalizedR

at 25°Cvs. TemperatureTypical Values

DS (ON)

Figure 6a: TypicalDiodeBehaviour in Synchro-

nous Rectification (L6201)

Figure6b: TypicalDiode Behaviourin Synchro-

nous Rectification (L6201PS/02/03)

Figure 7a: TypicalPowerDissipation vs I

(L6201)

6/20

L

Figure7b:

TypicalPower Dissipation vs I

L

(L6201PS,L6202, L6203))