STMicroelectronics L6201, L6201PS, L6202, L6203 Schematics

L6201

®

SUPPLY VOLTAGE UP TO 48V 5A MAX PEAK CU RRENT (2A max. for L6201) TOTAL RMS CURRENT UP TO

L6201: 1A; L6202: 1.5A; L6203/L6201PS: 4A R

0.3 Ω (typical value at 25 °C)

DS (ON)

CROSS CONDUCTION PRO TECTION TTL COMPATIBLE DRIVE OPERATING FREQUENCY UP TO 100 KHz THERMAL SHUTDOWN INTERNAL LOGIC SUPPLY HIGH EFFICIENCY

DESCRIPTION

The I.C. is a full bridge driver for motor control applications realized in Multipower-BCD technology which combines isolated DMOS power transistors with CMOS and Bipolar circuits on the same chip. By using mixed technology it has been possible to optimize the logic circuitry and the power stage to achieve the best possible performance. The DMOS output transistors can operate at supply voltages up to 42V and efficiently at high switch-

L6202 - L6203

DMOS FULL BRIDGE DRIVER

MULTIPOWER BCD TECHNOLOGY

Powerdip 12+3+3

Multiwatt11

ORDERING NUMBERS:

L6201

L6201PS

L6202

L6203

ing speeds. All the logic inputs are TTL, CMOS and µC compatible. Each channel (half-bridge) of the device is controlled by a separate logic input, while a common enable controls both channels. The I.C. is mounted in three different packages.

SO20 (12+4+4)

PowerSO20

(SO20)

(PowerSO20) (Powerdip18) (Multiwatt)

BLOCK DIAGRAM

July 2003

This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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L6201 - L6202 - L6203

PIN CONNECTIONS

(Top view)

SO20

GND

N.C. N.C.

OUT2

OUT1

BOOT1

N.C.

GND 10

V

IN1

POWERDIP

1 2 3 4

S

5 6 7 8 9

D95IN216

20 19 18 17 16 15 14 13 12 11

GND N.C. N.C. ENABLE SENSE Vref BOOT2 IN2 N.C. GND

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PowerSO20

MULTIWATT11

PINS FUNCTIONS

L6201 - L6202 - L6203

Device

L6201 L6201PS L6202 L6203

1 16 1 10 SENSE A resistor R

Name Function

connected to this pin provides feedback for

sense

motor current control.

2 17 2 11 ENABLEWhen a logic high is present on this pin the DMOS POWER

transistors are enabled to be selectively driven by IN1 and IN2.

3 2,3,9,12,

3 N.C. Not Connected

18,19

4,5 – 4

– 1, 10 5 GND Common Ground Terminal

GND Common Ground Terminal

6

6,7 – 6 GND Common Ground Terminal

8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge

10 5 9 2 V

s

Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge 12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient

driving of the upper POWER DMOS transistor. 13 8 12 5 IN1 Digital Input from the Motor Controller

14,15 – 13

– 11, 20 14 GND Common Ground Terminal

GND Common Ground Terminal

6

16,17 – 15 GND Common Ground Terminal

18 13 16 7 IN2 Digital Input from the Motor Controller 19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient

driving of the upper POWER DMOS transistor. 20 15 18 9 V

ref

Internal voltage reference. A capacitor from this pin to GND is

recommended. The internal Ref. Voltage can source out a

current of 2mA max.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

OD

V

, V

IN

I

o

V

sense

V

P

tot

, TjStorage and Junction Temperature – 40 to + 150 °C

T

stg

Note 1: Note 2:

Power Supply 52 V

s

Differential Output Voltage (between Out1 and Out2) 60 V Input or Enable Voltage – 0.3 to + 7 V

EN

Pulsed Output Current for L6201PS/L6202/L6203 (Note 1) – Non Repetitive (< 1 ms) for L6201 for L6201PS/L6202/L6203 DC Output Current for L6201 (Note 1)

5 5

10

1 Sensing Voltage – 1 to + 4 V Boostrap Peak Voltage 60 V

b

Total Power Dissipation:

= 90°C for L6201

T

pins

for L6202

= 90°C for L6201PS/L6203

T

case

= 70°C for L6201 (Note 2)

T

amb

for L6202 (Note 2) for L6201PS/L6203 (Note 2)

Pulse width limited only by junction temperature and transient thermal impedance (see thermal characteristics) Mounted on board with minimized dissipating copper area.

4

5

20

0.9

1.3

2.3

A A A A

W W W W W W

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L6201 - L6202 - L6203

THERMAL DATA

Symbol Parameter

Rt

h j-pins

Rt

h j-case

Rt

h j-amb

(*) Mounted on aluminium substrate.

Thermal Resistance Junction-pins max Thermal Resistance Junction Case max. Thermal Resistance Junction-ambient max.

ELECTRICAL CHARACTERISTICS

L6201 L6201PS L6202 L6203

15

–

85

(Refer to the Test Circuits; T

Value

– –

13 (*)

= 25°C, VS = 42V, V

j

12

–

60

– 3

35

= 0, unless

sens

otherwise specified).

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

s

V

ref

I

REF

I

s

f

c

T

j

T

d

Supply Voltage 12 36 48 V Reference Voltage I

= 2mA 13.5 V

REF

Output Current 2mA Quiescent Supply Current EN = H VIN = L

EN = H V EN = L ( Fig. 1,2,3)

= H

IN

IL = 0

10 10

8

15 15

15 Commutation Frequency (*) 30 100 KHz Thermal Shutdown 150 °C Dead Time Protection 100 ns

TRANSISTORS

OFF

I

DSS

Leakage Current Fig. 11 Vs = 52 V 1 mA

ON

R

V

DS(ON)

V

DS

sens

On Resistance Fig. 4,5 0.3 0.55 Ω Drain Source Voltage Fig. 9

I

DS

I

DS

I

DS

= 1A = 1.2A = 3A

L6201 L6202

L6201PS/0

3

0.3

0.36

0.9

Sensing Voltage – 1 4 V

SOURCE DRAIN DIODE

Unit

°C/W

mA mA mA

V V V

V

sd

t

rr

t

fr

Forward ON Voltage Fig. 6a and b

Reverse Recovery Time

Forward Recovery Time 200 ns

LOGIC LEVELS

V

I

4/20

IN L

IN H

I

IN L

IN H

, V , V , I , I

Input Low Voltage – 0.3 0.8 V

EN L

Input High Voltage 2 7 V

EN H

Input Low Current VIN, VEN = L –10 µA

EN L

Input High Current VIN, VEN = H 30 µA

EN H

= 1A

I

SD

= 1.2A

I

SD

= 3A

I

SD

L dif

= 25 A/µs

dt

I

= 1A

F

= 1.2A

I

F

= 3A

I

F

L6201

EN = L

L6202

EN = L

L6201PS/03

EN =

L6201 L6202 L6203

0.9 (**)

1.35(**)

300 ns

V V V

L6201 - L6202 - L6203

ELECTRICAL CHARACTERISTICS

(Continued)

LOGIC CONTROL TO POWER DRIVE TIMING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

(Vi) Source Current Turn-off Delay Fig. 12 300 ns

1

t

(Vi) Source Current Fall Time Fig. 12 200 ns

2

t

(Vi) Source Current Turn-on Delay Fig. 12 400 ns

3

t

(Vi) Source Current Rise Time Fig. 12 200 ns

4

t

(Vi) Sink Current Turn-off Delay Fig. 13 300 ns

5

t

(Vi) Sink Current Fall Time Fig. 13 200 ns

6

t

(Vi) Sink Current Turn-on Delay Fig. 13 400 ns

7

t

(Vi) Sink Current Rise Time Fig. 13 200 ns

8

(*)

Limited by power dissipation

(**)

In synchronous rectification the drain-source voltage drop VDS is shown in fig. 4 (L6202/03); typical value for the L6201 is of 0.3V.

Figure 1:

Typical Normalized I

vs. T

S

j

Figure 2:

Typical Normalized Quiescent Current

vs. Frequency

Figure 3:

Typical Normalized I

vs. V

S

Figure 4:

Typical R

DS (ON)

vs. VS ~ V

ref

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L6201 - L6202 - L6203

Figure 5:

Figure 6a:

Normalized R

at 25°C vs. Temperature Typical Values

DS (ON)

Typical Diode Behaviour in Synchro-

nous Rectification (L6201)

Figure 6b:

Typical Diode Behaviour in Synchro-

nous Rectification (L6201PS/02/03)

Figure 7a:

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Typical Power Dissipation vs I

(L6201)

L

Figure 7b:

Typical Power Dissipation vs I

L

(L6201PS, L6202, L6203))

L6201 - L6202 - L6203

Figure 8a:

Figure 8b:

Two Phase Chopping

One Phase Chopping

Figure 8c:

IN1 = H IN 2 = H EN = H

Enable Chopping

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