High-performance MEMS microphone with extended frequency response up to
80 kHz for ultrasound applications
Features
•Single supply voltage operation 1.52 V - 3.6 V
•Omnidirectional sensitivity
•High signal-to-noise ratio
•High acoustic overload point: 130 dBSPL typ.
•Package compliant with reflow soldering
•Enhanced RF immunity
•Ultra-flat frequency response
•Ultrasound bandwidth (up to 80 kHz)
•Low latency
•Ultra-low-power: 150 µA max.
•ECOPACK, RoHS, and “Green” compliant
Product status link
IMP23ABSU
Product summary
Order code IMP23ABSU IMP23ABSUTR
Temp. range
[°C]
Package(3.5 x 2.65 x 0.98) mm
PackingTrayTape and reel
Product label
-40 to +85
Applications
•Condition monitoring of industrial equipment
•Leak detection
•Electrical arcing
•Smart medical instruments
•Wearable devices
•Hearables
•Smart speakers
•Active noise-canceling headsets
Description
The IMP23ABSU is a compact, low-power microphone built with a capacitive sensing
element and an IC interface.
The sensing element, capable of detecting acoustic waves, is manufactured using a
specialized silicon micromachining process to produce audio sensors.
The IMP23ABSU has an acoustic overload point of 130 dBSPL with a typical 64 dB
signal-to-noise ratio.
The sensitivity of the IMP23ABSU is -38 dBV ±1 dB @ 94 dBSPL, 1 kHz.
The IMP23ABSU is available in a package compliant with reflow soldering and is
guaranteed to operate over an extended temperature range from -40 °C to +85 °C.
DS13376 - Rev 2 - September 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
Page 2
1Pin description
IMP23ABSU
Pin description
Figure 1. Pin connections (bottom view)
Table 1. Pin description
Pin number
1OutOutput
2GNDGND
3GNDGND
4GNDGND
5VddSupply voltage
Pin nameFunction
DS13376 - Rev 2
page 2/15
Page 3
2Acoustic and electrical specifications
2.1Acoustic and electrical characteristics
The values listed in the table below are specified for Vdd = 2.75 V, no load, Tamb = 25 °C unless otherwise
specified.
Figure 2. Typical free-field frequency response normalized at 1 kHz
IMP23ABSU
Frequency response
Table 3. Frequency response mask
Frequency (Hz)
35-20dBr 1kHz
100-1.50.5dBr 1kHz
900-11dBr 1kHz
100000dBr 1kHz
1100-11dBr 1kHz
8000-14dBr 1kHz
1500009dBr 1kHz
LSLUSLUnit
Figure 3. Typical ultrasonic free-field response normalized to 1 kHz
DS13376 - Rev 2
page 4/15
Page 5
3Absolute maximum ratings
Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device under these conditions is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
Table 4. Absolute maximum ratings
SymbolRatingsMaximum valueUnit
VddSupply voltage-0.5 to 4.8V
T
STG
This device is sensitive to mechanical shock, improper handling can cause permanent damage to the part.
Storage temperature range-40 to +125°C
IMP23ABSU
Absolute maximum ratings
This device is sensitive to electrostatic discharge (ESD), improper handling can cause permanent damage to the part.
DS13376 - Rev 2
page 5/15
Page 6
4Application recommendations
4.1IMP23ABSU schematic hints
Figure 4. IMP23ABSU electrical connections and external component values
IMP23ABSU
Application recommendations
DS13376 - Rev 2
page 6/15
Page 7
5Soldering information
T25°C to PEAK
RAMP-DOWN
RAMP-UP
t
s
PREHEAT
t
L
t
p
CRITICAL ZONE
TLto T
P
T
SMAX
T
SMIN
TIME
T
P
T
L
TEMPERATURE
30 60 90 120 150 180 210 240 270 300 330 360 390
Figure 5. Recommended soldering profile limits
IMP23ABSU
Soldering information
Table 5. Recommended soldering profile limits
Description
Average ramp rate
Preheat
Minimum temperature
Maximum temperature
Time (T
SMIN
to T
)t
SMAX
Ramp-up rate
Time maintained above liquidus temperature
Liquidus temperature
Peak temperature
Time within 5 °C of actual peak temperature20 sec to 40 sec
Ramp-down rate6 °C/sec max
Time 25 °C (t25 °C) to peak temperature8 minutes max
ParameterPb free
TL to T
P
T
SMIN
T
SMAX
S
T
to T
SMAX
L
t
L
T
L
T
P
3 °C/sec max
60 sec to 120 sec
60 sec to 150 sec
260 °C max
150 °C
200 °C
217 °C
DS13376 - Rev 2
page 7/15
Page 8
6Reliability tests
Test nameDescriptionConditions
Electrostatic Discharge Immunity Test
(ESD)
Latch-Up
(LU)
High Temperature Operative Life
(HTOL)
Temperature Humidity Bias
(THB)
Preconditioning MSL3
(PC)
Low Temperature Storage
(LTS)
High Temperature Storage
(HTS)
Temperature Cycling
(TC)
Temperature Humidity Storage
(THS)
Table 6. Reliability specifications
To classify ESD susceptibility the device is
submitted to a high voltage peak on all his
pins, simulating ESD stress according to
different simulation models (GUN, HBM, MM,
CDM)
To verify latch-up immunity the device is
submitted to a current injection on I/O or
supply overvoltage
To simulate the worst-case application stress
conditions, the device is stressed in dynamic
configuration at operative max. absolute
ratings
To investigate failure mechanisms activated
by electrical field and humidity, the device is
biased in static or dynamic operative
conditions at controlled high temperature and
relative humidity
To investigate effects of customer
manufacturing soldering enhanced by
package water absorption, the device is
submitted to typical temperature profile after
controlled moisture absorption
To investigate the failure mechanisms
activated by extremely cold conditions, the
device is stored in unbiased condition at the
min. temperature allowed by the package
materials
To investigate the failure mechanisms
activated by high temperature, the device is
stored in unbiased condition at the maximum
temperature allowed by the package materials
To investigate failure modes related to
thermo-mechanical stress, the device is
submitted to cycled temperature excursions,
between a hot and a cold chamber in air
atmosphere
To investigate degradations induced by wet
conditions, the device is stored at controlled
high temperature and relative humidity
IMP23ABSU
Reliability tests
ESD-GUN: 25 discharges at ±8 kV, direct
contact to housing of MIC
Reference specification IEC 61000-4-2
ESD-HBM 3 discharges up to ±2 kV pin-to-pin
Reference specification ANSI/ESDA/JEDEC
JS001
ESD-MM, 3 discharges up to ±200 V pin-topin
Reference specification JEDEC JESD22A115C
ESD-CDM, 3 discharges up to ±750 V
Reference specification ANSI/ESDA/JEDEC
JS002
±100 mA & 1.5 x Vdd @ 85 °C
Reference specification JEDEC JESD78
Ta 125 °C, Tj 125 °C, 1000 Hrs, @ Max Op
Voltage
Preconditioning (PC) before
Reference specification JESD22-A108
Ta 85°C, R.H. 85%, 1000 Hrs, @ Max Op
Voltage
Preconditioning (PC) before
Reference specification JESD22-A101
MSL3 as moisture soak conditions followed
by n.3 reflow @ Tpeak 260 °C
Reference specification JEDEC J-STD-020
Ta = -40 °C, 1000 Hrs
Reference specification JESD22-A120
Ta = 125 °C, 1000 Hrs
Reference specification JESD22-A104
Low T = - 40 °C, High T = +125 °C, 1000 Cys
Preconditioning (PC) before
Reference specification JESD22-A105
Ta = 85°C, R.H. = 85%, 1000Hrs
Preconditioning (PC) before
Reference specification JESD22-A102
DS13376 - Rev 2
page 8/15
Page 9
Test nameDescriptionConditions
Random Free-Fall on PCB
(TUMBLE)
Guided Free-Fall on PCB
(GFF)
Compressed Air Test
(CAT)
Mechanical Shock
(MS)
Variable Frequency Vibration
(VB)
To investigate durability to mechanical
repeated drops without any preferential
impact direction simulating drop effect on
handheld devices
To verify durability of the whole device to
mechanical shocks, done by controlling height
and impact direction simulating drop effect on
handheld devices
Test dedicated on the MEMS Microphone to
check mechanical robustness of sensor
membrane alone
To verify mechanical robustness of internal
structural elements (MEMS, package
components) to withstand severe shocks
produced by handling, transportation or field
operations
The vibration variable frequency test is
performed to determine the effect of vibration,
within a specified frequency range, on the
internal structural elements
IMP23ABSU
Reliability tests
Microphone soldered on PCB which is
mounted on a specific jig
Random drop from 1 mt on steel base, 300
drops
Reference specification IEC 60068-2-32
Microphone soldered on PCB which is
mounted on a specific jig
Guided drop from 1.5 mt on marble base,
2 drops x 6 directions
Reference specification IEC 60068-2-32
Microphone membrane is subjected to
repeated air pulses controlled on duration,
rise and fall time and amplitude.
Amplitude is varied with increasing steps.
ST internal specification
Five pulses of 10,000 g in each of six
directions with duration time 0.2 ms
Reference specification MIL 883, Method
2002.5
Peak acceleration of 20 g, from 20 Hz to 2000
Hz in three perpendicular directions
Reference specification MIL 883, Method
2007.3-A
DS13376 - Rev 2
page 9/15
Page 10
7Package information
Dimensions are in millimeter unless otherwise specified
General Tolerance is +/-0.15mm unless otherwise specified
OUTER DIMENSIONS
ITEM
DIMENSION [mm]
TOLERANCE [mm]
1.0± 5.3 ]L[ htgneL
1.0± 56.2 ]W[ htdiW
XAM 80.1 ]H[ thgieH
DM00368430_2
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
7.1RHLGA-5L package information
Figure 6. RHLGA metal cap 5-lead (3.5 x 2.65 x 0.98 mm) package outline and mechanical data
IMP23ABSU
Package information
DS13376 - Rev 2
page 10/15
Page 11
7.2Land pattern
1.675
0.838
0.725
0.522
0.522
φ 1.625
φ 1.025
φ 0.5
0.710
0.725
1.364
0.822
0.460
φ
1.625
φ
1.025
1.252
0.300
1.675
0.640
0.640
0.460
2.074
Land pattern
Stencil opening
IMP23ABSU
Land pattern
Figure 7. Land pattern and recommended stencil opening
DS13376 - Rev 2
page 11/15
Page 12
7.3RHLGA-5L packing information
Figure 8. Carrier tape information for RHLGA-5L package
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