ST VND1NV04, VNN1NV04, VNS1NV04 User Manual

VND1NV04 VNN1NV04 - VNS1NV04

OMNIFET II fully autoprotected Power MOSFET

Features

Parameter	Symbol	Value
Max on-state resistance (per ch.)	RON	250 mΩ
Current limitation (typ)	ILIMH	1.7 A
Drain-source clamp voltage	VCLAMP	40 V

■Linear current limitation

■Thermal shutdown

■Short circuit protection

■Integrated clamp

■Low current drawn from input pin

■Diagnostic feedback through input pin

■ESD protection

■Direct access to the gate of the Power MOSFET (analog driving)

■Compatible with standard Power MOSFET

3

1

TO-252 (DPAK)

2

3

2

1

SOT-223 SO-8

Description

The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Table 1.	Device summary
Package				Order codes
		Tube	Tube (lead free)		Tape and reel	Tape and reel (lead free)
TO-252 (DPAK)		VND1NV04	VND1NV04-E		VND1NV0413TR	VND1NV04TR-E
SOT-223		VNN1NV04	-		VNN1NV0413TR	-
SO-8		VNS1NV04	-		VNS1NV0413TR	-
December 2011			Doc ID 7381 Rev 3			1/33

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Contents	VND1NV04 - VNN1NV04 - VNS1NV04

Contents

1	Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 5
2	Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 6
	2.1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	2.2	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.3	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
	2.4	Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	12
3	Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16
4	Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		17
	4.1	DPAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	17
	4.2	SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	19
	4.3	SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	22
5	Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		25
	5.1	DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	25
	5.2	SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	27
	5.3	SO8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	27
	5.4	DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	29
	5.5	SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	30
	5.6	SO8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	31
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		32

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VND1NV04 - VNN1NV04 - VNS1NV04	List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. DPAK thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 6. SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 7. SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 8. DPAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 9. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 10. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

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List of figures	VND1NV04 - VNN1NV04 - VNS1NV04

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 5. Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 9. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 10. Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 11. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 12. Static drain-source on resistance vs. input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 13. Static drain-source on resistance vs. input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 14. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 15. Static drain-source on resistance vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 16. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 17. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 18. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 19. Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 21. Turn-off drain-source voltage slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 23. Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 24. Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 25. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 26. Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 27. Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 28. Normalized current limit vs. junction temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 30. DPAK PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 31. DPAK Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . 17 Figure 32. DPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 33. DPAK thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 34. SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 35. SOT-223 Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . 20 Figure 36. SOT-223 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 37. SOT-223 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 38. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 39. SO-8 Rthj-amb vs. PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . 22 Figure 40. SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 41. SO-8 thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 42. DPAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 43. SOT-223 mechanical data & package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 44. SO-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 45. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 46. SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Figure 47. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

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VND1NV04 - VNN1NV04 - VNS1NV04	Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

			DRAIN
			2
			Overvoltage
			Clamp
INPUT		Gate
	1
		Control
			Linear
		Over	Current
			Limiter
		Temperature
			3
			SOURCE

Figure 2. Configuration diagram (top view)

SOURCE			1	8	DRAIN
SOURCE					DRAIN
SOURCE			4	5	DRAIN
INPUT					DRAIN

1. For the pins configuration related to SOT-223 and DPAK see outline at page 1.

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Electrical specifications	VND1NV04 - VNN1NV04 - VNS1NV04

2 Electrical specifications

Figure 3. Current and voltage conventions

	ID
	VDS
	DRAIN
I	RIN
IN	INPUT
	SOURCE
VIN

2.1Absolute maximum ratings

The rating listed in Table 2: Absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability.

	Table 2.	Absolute maximum ratings
	Symbol	Parameter		Value		Unit
			SOT-223	SO-8	DPAK
	VDSn	Drain-source voltage (VINn=0 V)	Internally clamped			V
	VINn	Input voltage	Internally clamped			V
	IINn	Input current		+/-20		mA
	RIN MINn	Minimum input series impedance		330		Ω
	IDn	Drain current	Internally limited			A
	IRn	Reverse DC output current		-3		A
	VESD1	Electrostatic discharge (R=1.5 KΩ, C=100 pF)		4000		V
	VESD2	Electrostatic discharge on output pins only		16500		V
		(R=330 Ω, C=150 pF)
	Ptot	Total dissipation at Tc=25 °C	7	8.3	35	W
	Tj	Operating junction temperature	Internally limited			°C
	Tc	Case operating temperature	Internally limited			°C
	Tstg	Storage temperature		-55 to 150		°C

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2.2Thermal data

	Table 3.	Thermal data
	Symbol	Parameter	Maximum value			Unit
			SOT-223	SO-8	DPAK
	Rthj-case	Thermal resistance junction-case	18		3.5	°C/W
	Rthj-lead	Thermal resistance junction-lead		15		°C/W
	Rthj-amb	Thermal resistance junction-ambient	70(1)	65(1)	54(1)	°C/W

1.When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected to all DRAIN pins

2.3Electrical characteristics

Table 4.		Electrical characteristics
Symbol		Parameter		Test conditions	Min.	Typ.	Max.	Unit
Off (-40 °C<Tj<150 °C, unless otherwise specified)
VCLAMP		Drain-source clamp	VIN=0 V; ID=0.5 A		40	45	55	V
		voltage
VCLTH		Drain-source clamp	VIN=0 V; ID=2 mA		36			V
		threshold voltage
VINTH		Input threshold	VDS=VIN; ID=1 mA		0.5		2.5	V
		voltage
IISS		Supply current from	VDS=0 V; VIN=5 V			100	150	µA
		input pin
VINCL		Input-source clamp	IIN=1 mA		6	6.8	8	V
		voltage	IIN=-1 mA		-1.0		-0.3
		Zero input voltage	VDS=13 V; VIN=0 V; Tj=25 °C				30	µA
IDSS		drain current
			VDS=25 V; VIN=0 V				75
		(VIN=0 V)
On (-40 °C<Tj<150 °C, unless otherwise specified)
RDS(on)		Static drain-source on	VIN=5 V; ID=0.5 A; Tj=25 °C				250	mΩ
		resistance	VIN=5 V; ID=0.5 A				500
Dynamic (Tj=25 °C, unless otherwise specified)
g	(1)	Forward	V	=13 V; I =0.5 A		2		S
		transconductance
	fs		DD	D
COSS		Output capacitance	VDS=13 V; f=1 MHz; VIN=0 V			90		pF

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Electrical specifications			VND1NV04 - VNN1NV04 - VNS1NV04
	Table 4.	Electrical characteristics (continued)
	Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
	Switching (Tj=25 °C, unless otherwise specified)
	td(on)	Turn-on delay time				70	200	ns
			VDD=15 V; ID=0.5 A
	tr	Rise time		Ω		170	500	ns
			Vgen=5 V; Rgen=RIN MIN=330
	td(off)	Turn-off delay time				350	1000	ns
			(see Figure 4)
	tf	Fall time				200	600	ns
	td(on)	Turn-on delay time				0.25	1.0	µs
			VDD=15 V; ID=0.5 A
	tr	Rise time				1.3	4.0	µs
			Vgen=5 V; Rgen=2.2 KΩ
	td(off)	Turn-off delay time				1.8	5.5	µs
			(see Figure 4)
	tf	Fall time				1.2	4.0	µs
	(dI/dt)on	Turn-on current slope	VDD=15 V; ID=1.5 A			5		A/µs
			Vgen=5 V; Rgen=RIN MIN=330	Ω
	Qi	Total input charge	VDD=12 V; ID=0.5 A; VIN=5 V			5		nC
			Igen=2.13 mA (see Figure 7)
	Source drain diode (Tj=25 °C, unless otherwise specified)
	(1)	Forward on voltage	ISD=0.5 A; VIN=0 V			0.8		V
	VSD
	trr	Reverse recovery				205		ns
		time	ISD=0.5 A; dI/dt=6 A/µs
		Reverse recovery
	Qrr		VDD=30 V; L=200 µH			100		nC
		charge
			(see Figure 5)
	IRRM	Reverse recovery				0.7		A
		current
	Protections (-40 °C<Tj<150 °C, unless otherwise specified)
	Ilim	Drain current limit	VIN=5 V; VDS=13 V		1.7		3.5	A
	tdlim	Step response	VIN=5 V; VDS=13 V			2.0		µs
		current limit
	Tjsh	Overtemperature			150	175	200	°C
		shutdown
	Tjrs	Overtemperature			135			°C
		reset
	Igf	Fault sink current	VIN=5 V; VDS=13 V; Tj=Tjsh		10	15	20	mA
			Starting Tj=25 °C; VDD=24 V
	Eas	Single pulse	VIN=5 V Rgen=RIN MIN=330 Ω;		55			mJ
		avalanche energy	L=50 mH
			(see Figure 6 and Figure 8)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

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VND1NV04 - VNN1NV04 - VNS1NV04	Electrical specifications

Figure 4. Switching time test circuit for resistive load

		VD
		Rgen
		Vgen
ID
	90%
tr	10%	tf
td(on)		t
		t
Vgen		d(off)
		t

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Electrical specifications	VND1NV04 - VNN1NV04 - VNS1NV04
Figure 5. Test circuit for diode recovery times

	A			A
D
I		FAST		L=100uH
OMNIFET		DIODE
S	B			B
330Ω				D
		Rgen		VDD
			I
				OMNIFET
Vgen				S
				8.5 Ω

Figure 6. Unclamped inductive load test circuits

RGEN

VIN

PW

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