The VND05BSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
This device has two channels, and a common
diagnostic. Built-in thermal shutdown protects the
chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to V
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
V
(BR)DSS
I
OUT
I
OUT (RMS)
I
R
I
IN
-V
CC
I
STAT
V
ESD
Ptot Power dissipation at T
Tj Junction operating temperature-40 to 150 °C
Tstg Storage temperature-55 to 150 °C
Drain-Source breakdown voltage40V
Output current (cont.) at Tc=85°C9A
RMS output current at Tc=85°C and f> 1Hz9A
Reverse output current at Tc=85°C-9A
Input current±10mA
Reverse supply voltage-4V
Status current±10mA
Electrostatic discharge (1.5 kΩ, 100 pF) 2000V
c = 25 °C59W
6/16
VND05BSPElectrical specifications
2.2 Thermal data
Table 3.Thermal data
SymbolParameterMax. valueUnit
R
thj-case
R
thj-amb
Thermal resistance junction-case2.1°C/W
Thermal resistance junction-ambient50°C/W
2.3 Electrical characteristics
Values specified in this section are for 8<VCC<16V;-40°C<Tj<125°C, unless otherwise
stated.
Table 4.Power
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
I
n
RonOn state resistance
V
DS(MAX)
Supply voltage61326V
CC
(1)
Nominal current
T
V
I
OUT
Tj = 25°C
I
Supply current
S
Maximum voltage drop
Output to GND internal
Ri
impedance
Off state Tj = 25 °C
V
I
OUT
V
Tj = 25 °C51020KΩ
=85°C V
C
CC
CC
=13V
=I
n; VCC
=13V
DS(on)
=13V
=7.5 A; Tj = 85°C
=13V
CC
<0.5
1.62.6A
0.130.2Ω
35100µA
1.442.3V
1. In= Nominal current according to ISO definition for high side automotive switch(Tc = 85 oC for battery voltage of 13V which
produces a voltage drop of 0.5 V).
Table 5.Switching (VCC=13V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 5.4 Ω
R
OUT
(see
= 5.4 Ω1050180µs
R
OUT
= 5.4 Ω1075250µs
R
OUT
R
= 5.4 Ω1035180µs
OUT
= 5.4 Ω0.0030.1
OUT
= 5.4 Ω0.0050.1
OUT
525200µs
A/µs
A/µs
A/µs
A/µs
dV
dV
t
d(on)
t
d(off)
OUT
OUT
Turn-on delay time of
output current
t
r
Rise time of output
current
Turn-off delay time of
output current
t
f
/dt
/dt
Fall time of output
current
Turn-on current slopeR
(on)
Turn-off current slopeR
(off)
7/16
Electrical specificationsVND05BSP
Table 6.Logic inputs
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
IL
V
IH
V
I(hyst.)
I
IN
V
ICL
1. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
Figure 8.Typical application circuit with a schottky diode for reverse supply protection
Figure 9.Typical application circuit with separate signal ground
11/16
Application informationVND05BSP
3.1 Functional description
The device has a diagnostic output which indicates open load in on-state, open load in offstate, over temperature conditions and stuck-on to V
From the falling edge of the input signal, the status output, initially low to signal a fault
condition (overtemperature or open load on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl) and in case of open open load (tpol)
respectively.
This feature allows to discriminate the nature of the detected fault. To protect the device
against short circuit and over current condition, the thermal protection turns the integrated
Power MOSFET off at a minimum junction temperature of 140°C. When this temperature
returns to 125°C the switch is automatically turned on again. In short circuit the protection
reacts with virtually no delay, the sensor being located inside the Power MOSFET area. An
internal function of the devices ensures the fast demagnetization of inductive loads with a
typical voltage (V
demag) of -18V. This function allows to greatly reduces the power dissipation
according to the formula:
P
dem = 0.5 • Lload •(Ι load)2 • [(VCC+Vdemag)/Vdemag] • f
CC
.
where f = switching frequency and V
demag = demagnetization voltage.
The maximum inductance which causes the chip temperature to reach the shut-down
temperature in a specified thermal environment is a function of the load current for a fixed
V
, Vdemag and f according to the above formula. In this device if the GND pin is
CC
disconnected, with V
not exceeding 16V, it will switch off.
CC
3.2 Protecting the device against reverse battery
The simplest way to protect the device against a continuous reverse battery voltage (-26V)
is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical
application circuit (Figure 8.).
The consequences of the voltage drop across this diode are as follows:
●If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,
V
IH thresholds and VSTAT are increased by VF with respect to power GND).
●The undervoltage shutdown level is increased by VF.
If there is no need for the control unit to handle external analog signals referred to the power
GND, the best approach is to connect the reference potential of the control unit to node [1]
(see Figure 9.), which becomes the common signal GND for the whole control board. In this
way no shift of V
pin; this solution allows the use of a standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that occours in the automotive environment.
IH, VIL and VSTAT takes place and no negative voltage appears on the INPUT
12/16
VND05BSPPackage and packing information
4 Package and packing information
4.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. ECOPACK
®
packages are lead-free. The category of Second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.
4.2 PowerSO-10 mechanical data
Figure 10. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
L
α
13/16
Package and packing informationVND05BSP
Table 9.PowerSO-10 mechanical data
mm
Dim.
Min.Typ.Max.
A3.353.65
(1)
A
A100.10
B0.400.60
(1)
B
C0.350.55
(1)
C
D9.409.60
D17.407.60
E9.309.50
3.43.6
0.370.53
0.230.32
E27.207.60
(1)
E2
E45.906.10
(1)
E4
e1.27
F1.251.35
(1)
F
H13.8014.40
(1)
H
h0.50
L1.201.80
(1)
L
α0°8°
(1)
α
1. Muar only POA P013P.
7.307.50
5.906.30
1.201.40
13.8514.35
0.801.10
2°8°
14/16
VND05BSPRevision history
5 Revision history
Table 10.Document revision history
DateRevisionChanges
Apr-20011Initial release.
03-May-20062
24-Nov-20083
Added contents, list of tables and figures.
Added Table 10.: Document revision history.
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