Features
Typ e V
CLAMP
VNB49N04
42 V 20 mΩ 49 A
VNV49N04
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
R
DS(ON)
I
LIM
VNB49N04 - VNV49N04
OMNIFET:
fully autoprotected Power MOSFET
3
1
TO-263(D2PAK)
Description
The VNB49N04, VNV49N04 are monolithic devices
designed in STMicroelectronics™ VIPower™ M0
technology, intended for replacement of standard
Power MOSFETs from DC up to 50 KHz
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
10
1
PowerSO-10
Table 1. Device summary
Order code
Package
Tube Tape and reel
PowerSO-10 VNV49N04 VNV49N0413TR
TO-263 (D2PAK) VNB49N04 VNB49N0413TR
November 2010 Doc ID 1641 Rev 2 1/22
www.st.com
1
Contents VNB49N04 - VNV49N04
Contents
1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 10. TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 11. PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 12. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Doc ID 1641 Rev 2 3/22
List of figures VNB49N04 - VNV49N04
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Connection diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Thermal impedance for D2PAK / PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 6. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 7. Static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 8. Static drain-source on resistance (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 9. Static drain-source on resistance (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 10. Input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 11. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 12. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 13. Normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 14. Normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 15. Turn-on current slope (part 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 16. Turn-on current slope (part 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 17. Turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 18. Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 19. Switching time resistive load vs R
Figure 20. Switching time resistive load vs R
Figure 21. Switching time resistive load vs V
Figure 22. Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 23. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 24. Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 25. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 26. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 27. Switching time test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 28. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 29. Test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 15
Figure 30. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 31. TO-263 (D2PAK) package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 32. PowerSO-10 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
(part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
G
(part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
IN
4/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Block diagram
1 Block diagram
Figure 1. Block diagram
Figure 2. Connection diagram (top view)
PowerSO-10
D2PAK
Doc ID 1641 Rev 2 5/22
Electrical specifications VNB49N04 - VNV49N04
2 Electrical specifications
2.1 Absolute maximum rating
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
Drain-source voltage (VIN= 0 V) Internally clamped V
Input voltage 18 V
Drain current Internally limited A
Reverse DC output current -50 A
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF) 2000 V
Total dissipation at Tc=25°C 125 W
Operating junction temperature Internally limited °C
Case operating temperature Internally limited °C
Storage temperature -55 to 150 °C
V
V
V
P
T
DS
IN
I
D
I
R
ESD
tot
T
T
c
stg
j
2.2 Thermal data
Table 3. Thermal data
Symbol Parameter
R
thj-case
R
thj-amb
Thermal resistance junction-case (max) 1 1 °C/W
Thermal resistance junction-ambient (max) 50 62.5 °C/W
Val ue
Unit
PowerSO-10 D2PAK
6/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Electrical specifications
2.3 Electrical characteristics
-40 °C < Tj< 125 °C, unless otherwise specified
Table 4. Off
Symbol Parameter Test conditions Min Typ Max Unit
V
CLAMP
V
CLTH
V
INCL
I
DSS
I
ISS
Table 5. On
Drain-source clamp voltage ID=200mA; VIN= 0 34 42 50 V
Drain-source clamp threshold
voltage
Input-source reverse clamp
voltage
Zero input voltage drain
current (V
=0V)
IN
I
=2mA; VIN=0 33 V
D
= -1 mA -1.2 -0.1 V
I
IN
VDS=13V; VIN=0V 70 µA
V
=25V; VIN= 0 V 220 µA
DS
Supply current from input pin VDS=0V; VIN= 10 V 250 550 µA
(1)
Symbol Parameter Test conditions Min Typ Max Unit
V
IN(th)
R
DS(on)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6. Dynamic
Input threshold voltage VDS=VIN; ID + IIN= 1 mA 0.8 — 3 V
=10V; ID=25A — 0.04 Ω
V
Static drain-source on
resistance
IN
=5V; ID=25A — 0.05 Ω
V
IN
Symbol Parameter Test conditions Min Typ Max Unit
g
fs
transconductance
C
Output capacitance
OSS
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 7. Switching
(1)
=13V; ID=25A; Tc=25°C 25 30 S
V
DS
=13V; f=1MHz; VIN=0V;
V
DS
Tc=25°C
1100 1500 pF
Forward
(1)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
d(off)
t
t
Turn-on delay time
Rise time — 1300 3600 ns
r
Turn-off delay time — 800 2400 ns
Fall time — 300 900 ns
f
VDS=15V; ID=25A; V
R
=10Ω; (see Figure 27)
gen
gen
=10V;
— 200 600 ns
Doc ID 1641 Rev 2 7/22
Electrical specifications VNB49N04 - VNV49N04
Table 7. Switching
(1)
(continued)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
tr Rise time — 3.8 10.4 µs
t
d(off)
t
(di/dt)
Q
1. Parameters guaranteed by design/characterization
Table 8. Source drain diode
Turn-on delay time
=15V; ID=25A; V
V
DS
R
= 1000 Ω (see Figure 27)
Turn-off delay time — 12 24 µs
Fall time — 6.1 17 µs
f
Turn-on current slope
on
Total input charge VDS=15V; ID=25A; VIN= 10 V — 100 nC
i
gen
V
=15V; ID=25A; VIN=10V;
DS
R
=10Ω
gen
gen
=10V;
—1.33.8µs
—25 A/µs
Symbol Parameter Test conditions Min Typ Max Unit
(1)
V
SD
t
rr
Q
rr
I
RRM
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Parameters guaranteed by design/characterization.
Forward on voltage ISD=25A; VIN=0V — 1.8 V
(2)
Reverse recovery time
(2)
Reverse recovery charge — 910 nC
(2)
Reverse recovery current — 7.5 A
= 25 A; di/dt = 100 A/µs;
I
SD
VDS=30V; Tj=25°C;
(see Figure 29)
—250 ns
Table 9. Protections
Symbol Parameter Test conditions Min Typ Max Unit
V
=10V; VDS= 13 V 28 49 70 A
ILIM Drain current limit
(1)
t
dlim
T
jsh
T
jrs
I
gf
E
as
1. Parameters guaranteed by design/characterization.
Step response current limit
(1)
Overtemperature shutdown 150 °C
(1)
Overtemperature reset 135 °C
(1)
Fault sink current
Single pulse avalanche
(1)
energy
IN
=5V; VDS= 13 V 28 49 70 A
V
IN
V
= 10 V 35 50 µs
IN
V
= 5 V 90 150 µs
IN
V
=10V; VDS=13V 50 mA
IN
=5V; VDS=13V 20 mA
V
IN
Starting Tj=25°C; VDS=20V;
=10V; R
V
IN
=1KΩ; L=6mH
gen
4 J
8/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Electrical specifications
2.4 Electrical characteristics curves
Figure 3. Thermal impedance for D2PAK /
Figure 5. Output characteristics Figure 6. Transconductance
Figure 4. Derating curve
PowerSO-10
Figure 7. Static drain-source on resistance
vs input voltage
Doc ID 1641 Rev 2 9/22
Figure 8. Static drain-source on resistance
(part 1)
Electrical specifications VNB49N04 - VNV49N04
Figure 9. Static drain-source on resistance
R
DS(on)
40
35
30
25
20
15
10
5
0
(part 2)
(mO hm)
V
= 5V
IN
V
= 10V
IN
5 10152025
ID(A)
Figure 10. Input charge vs input voltage
Figure 11. Capacitance variations Figure 12. Normalized input threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature (part 1)
Figure 14. Normalized on resistance vs
10/22 Doc ID 1641 Rev 2
temperature (part 2)
VNB49N04 - VNV49N04 Electrical specifications
Figure 15. Turn-on current slope (part 1) Figure 16. Turn-on current slope (part 2)
Figure 17. Turn-off drain-source voltage slope
Figure 19. Switching time resistive load vs R
(part 1)
G
(part 1)
Figure 18. Turn-off drain-source voltage slope
(part 2)
Figure 20. Switching time resistive load vs R
G
(part 2)
Doc ID 1641 Rev 2 11/22
Electrical specifications VNB49N04 - VNV49N04
Figure 21. Switching time resistive load vs VINFigure 22. Current limit vs junction
temperature
Figure 23. Step response current limit Figure 24. Source drain diode forward
characteristics
12/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Electrical specifications
2.5 Waveforms
Figure 25. Unclamped inductive load test circuits
Figure 26. Unclamped inductive waveforms
Doc ID 1641 Rev 2 13/22
Electrical specifications VNB49N04 - VNV49N04
Figure 27. Switching time test circuits for resistive load
Figure 28. Input charge test circuit
14/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Electrical specifications
Figure 29. Test circuit for inductive load switching and diode recovery times
Figure 30. Waveforms
Doc ID 1641 Rev 2 15/22
Protection features VNB49N04 - VNV49N04
3 Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET. The device then behaves like a standard power MOSFET and can be used
as a switch from DC up to 50 KHz. The only difference
from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order
to supply the internal circuitry.
The device integrates:
● Overvoltage clamp protection:
Internally set at 42V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
● Linear current limiter circuit:
Limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current
limiter is active, the device operates in the linear region, so power dissipation may
exceed the capability of the heatsink. Both case and junction temperatures increase,
and if this phase lasts long enough, junction temperature may reach the
overtemperature threshold Tjsh.
● Overtemperature and short circuit protection:
These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area
ensures fast, accurate detection of the junction temperature. Overtemperature cutout
occurs at minimum 150 °C. The device is automatically restarted when the chip
temperature falls below 135 °C.
● Status feedback:
In the case of an overtemperature fault condition, a status feedback is provided through
the INPUT pin. The internal protection circuit disconnects the input from the gate and
connects it instead to ground via an equivalent resistance of 100Ω. The failure can be
detected by monitoring the voltage at the INPUT pin, which will be close to ground
potential. Additional features of this device are ESD protection according to the Human
Body model and the ability to be driven from a TTL Logic circuit (with a small increase
in R
DS(ON)
).
16/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Package and packing information
4 Package and packing information
4.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
4.2 TO-263 (D2PAK) mechanical data
Table 10. TO-263 (D2PAK) mechanical data
mm. Inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 4.30 — 4.60 0.169 — 0.181
A1 2.49 — 2.69 0.098 — 0.106
B 0.70 — 0.93 0.027 — 0.036
B2 1.25 — 1.4 0.049 — 0.055
C 0.45 — 0.6 0.017 — 0.023
C2 1.21 — 1.36 0.047 — 0.053
D 8.95 — 9.35 0.352 — 0.368
E 10 — 10.28 0.393 — 0.404
G 4.88 — 5.28 0.192 — 0.208
L 15 — 15.85 0.590 — 0.625
L2 1.27 — 1.4 0.050 — 0.055
L3 1.4 — 1.75 0.055 — 0.068
Doc ID 1641 Rev 2 17/22
Package and packing information VNB49N04 - VNV49N04
Figure 31. TO-263 (D2PAK) package dimension
D
A
E
C2
DETAIL "A"
L2
L
L3
A1
C
B2
A2
DETAIL "A"
B
G
18/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Package and packing information
4.3 PowerSO-10 mechanical data
Table 11. PowerSO-10 mechanical data
mm. Inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
Q 1.70 0.067
0º 8º
Doc ID 1641 Rev 2 19/22
Package and packing information VNB49N04 - VNV49N04
Figure 32. PowerSO-10 package dimension
B
0.10 A
B
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
DETAIL "A"
E
SEATING
PLANE
A
C
α
E4
SEATING
PLANE
A1
L
20/22 Doc ID 1641 Rev 2
VNB49N04 - VNV49N04 Revision history
5 Revision history
Table 12. Document revision history
Date Revision Change
01-Oct-1999 1 Initial release.
Changed document template.
25-Nov-2010 2
Removed ISOWATT220 package.
Updated Figure 9: Static drain-source on resistance (part 2)
Doc ID 1641 Rev 2 21/22
VNB49N04 - VNV49N04
Please Read Carefully:
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right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
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22/22 Doc ID 1641 Rev 2
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