Datasheet VN05H Datasheet (SGS Thomson Microelectronics)

VN05H
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V
VN05H 60 V 0.18 12 A 36 V
OUTPUT CURRENT (CONTINUOUS):
12A @ T
LOGIC LEVEL 5V COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT- DO WN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
=25oC
c
DSS
R
DS(on
OUT
V
CC
DISSIPATION
DESCRIP TION
The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from over temperature and short circ uit.
The input control is 5V logic level compatible. The open drain diagnostic output indicates open
circuit (no load) and over temperature stat us.
BLOCK DIAG RAM
PENTAW AT T
(vertical)
PENTAW AT T
(horizontal )
PENTAW AT T
(in-line)
ORDER CODES:
PENTAWATT
vertical VN050H
PENTAWA TT horizontal VN050H(011Y) PENTAWA TT in-line VN050H(012Y)
July 1998
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VN05H
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I V V
-V I
STAT
V
ESD
P
T
T
ESB Power Mos Avalanche Energy 350 mJ
CONNECTION DIAGRAMS
Drain-Source Breakdown Voltage 60 V Output Current (cont.) 12 A Reverse Output Current -12 A
R
Input Current ±10 mA
IN
Supply Voltage (continuous) 40 V
CC
Supply Voltage (pulsed) 60 V
CC
Reverse Supply Voltage -4 V
CC
Status Current ±10 mA Electrostatic Discharge (1.5 k, 100 pF) 2000 V Power Dissipation at Tc 25 oC 52 W
tot
Junction Operating Temperature -40 to 150
j
Storage Temperature -55 to 150
stg
o
C
o
C
CURRENT AND VOLTAGE CONVENTI ONS
2/10
VN05H
THERMAL DATA
50 15
o
C/W
o
C/W
µA
mA
A/µs
2
A/µs
4
A/µs
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
2.4
62.5
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 Tj 125 oC unless otherwise specified) POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
R
I
Supply Voltage see note 1 5.5 13 36 V
CC
On State Resistance I
on
Supply Current Off State Tj 25 oC
S
= 6 A
OUT
I
= 6 A Tj = 25 oC
OUT
0.18
0.36
On State
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
V
demag
Turn-on Delay Time Of Output Current
t
Rise Time Of Output
r
Current Turn-off Delay Time Of
Output Current
t
Fall Time Of Output
f
Current Turn-on Current Slope I
on
Turn-off Current Slope I
off
Inductive Load Clamp Voltage
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
= 6 A
OUT
I
= IOV 25 Tj 140 oC
OUT
= 6 A
OUT
I
= IOV 25 Tj 140 oC
OUT
I
= 6 A L = 1 mH -7 -4 -2 V
OUT
= 25 oC
j
= 25 oC
j
= 25 oC
j
= 25 oC
j
15 µs
30 µs
20 µs
10 µs
0.52A/µs
Ω Ω
LOGIC INP UT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Voltage Input High Level
IH
2(*)V
Voltage Input Hysteresis
0.5 V
Voltage Input Current VIN = 5 V 50 µA
IN
Input Clamp Voltage IIN = 10 mA
ICL
I
= -10 mA
IN
6
-0.7
0.8 V
V V
3/10
VN05H
ELECTRICAL CHARACTERISTICS (Continued)
PROTECT IO N AND DIAG NO S TIC S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
() Status Voltage Output
STAT
V
USD
V
SCL
I
OV
I
AV
I
OL
T
TSD
T
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. () Status determinaion > 100 µs after the switching edge. Note 1: Above V reaches thermal shutdown temperature.
Low Under Voltage Shut
Down
() Status Clamp Voltage I
Over Current R Average Current in
Short Circuit Open Load Current
Level Termal Shut-Down
Temperature Reset Temperature 125
R
= 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
CC
I
= 1.6 mA 0.4 v
STAT
= 10 mA
STAT
I
= -10 mA
STAT
< 10 m 20 A
LOAD
R
< 10 m Tc = 85 oC 1.4 A
LOAD
5 180 mA
140
6
-0.7
5.5 V
o
o
V V
C
C
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic.
To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 temperature returns to about 125
o
C. When the
o
C the switch is automatically turned on again. To ensur the protection in all V
conditions and in all the
CC
junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631.
Above V
= 36V the output voltage is clamped
CC
to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY
The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3).
The consequences of the voltage drop across this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -V thresholds and V respect to power GND).
is seen by the device. (VIL, V
F
are increased by VF with
STAT
- The undervoltage shutdown level is increased
.
by V
F
If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board.
In this way no shift of V place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment.
, VIL and V
IH
STAT
takes
IH
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TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
Open Circuit (No Load) L
Over-temperature L
Under-voltage X
Figure 1: Waveforms
VN05H
L
H
H
H
X
H
L
H
L L
L L
H H
H
L
H
L
H H
Figure 2: Over Current Test Circuit
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VN05H
Figure 3: Typical Application Circuit With A Schott ky Diode For Reverse Supply Prot ection
Figure 4: Typical Application Circuit With Separ ate Signal Gr ound
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PENTAWATT (VERTICAL) MECHANICAL DATA
VN05H
DIM.
A4.80.189 C1.370.054 D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260
M4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
P010E
7/10
VN05H
PENTAWATT (HORIZONTAL) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409
L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152
mm inch
8/10
P010F
PENTAWATT (IN-LINE) MECHANICAL DATA
VN05H
DIM.
MIN TYP MAX MIN TYP MAX
A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409
L2 23.05 23.4 23.8 0.907 0.921 0.937 L3 25.3 25.65 26.1 0.996 1.010 1.028 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260
Diam. 3.65 3.85 0.144 0.152
mm inch
P010D
9/10
VN05H
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