The VN05H is a monolithic devices made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circ uit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
Drain-Source Breakdown Voltage60V
Output Current (cont.)12A
Reverse Output Current-12A
R
Input Current±10mA
IN
Supply Voltage (continuous)40V
CC
Supply Voltage (pulsed)60V
CC
Reverse Supply Voltage-4V
CC
Status Current±10mA
Electrostatic Discharge (1.5 kΩ, 100 pF)2000V
Power Dissipation at Tc ≤ 25 oC 52W
tot
Junction Operating Temperature-40 to 150
j
Storage Temperature-55 to 150
stg
o
C
o
C
CURRENT AND VOLTAGE CONVENTI ONS
2/10
VN05H
THERMAL DATA
50
15
o
C/W
o
C/W
µA
mA
A/µs
2
A/µs
4
A/µs
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.4
62.5
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
R
I
Supply Voltagesee note 15.51336V
CC
On State ResistanceI
on
Supply Current Off State Tj ≥ 25 oC
S
= 6 A
OUT
I
= 6 A Tj = 25 oC
OUT
0.18
0.36
On State
SWITCHING
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
V
demag
Turn-on Delay Time Of
Output Current
t
Rise Time Of Output
r
Current
Turn-off Delay Time Of
Output Current
t
Fall Time Of Output
f
Current
Turn-on Current SlopeI
on
Turn-off Current SlopeI
off
Inductive Load Clamp
Voltage
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
= 6 A
OUT
I
= IOV 25 ≤ Tj ≤ 140 oC
OUT
= 6 A
OUT
I
= IOV 25 ≤ Tj ≤ 140 oC
OUT
I
= 6 A L = 1 mH-7-4-2V
OUT
= 25 oC
j
= 25 oC
j
= 25 oC
j
= 25 oC
j
15µs
30µs
20µs
10µs
0.52A/µs
Ω
Ω
LOGIC INP UT
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Voltage
Input High Level
IH
2(*)V
Voltage
Input Hysteresis
0.5V
Voltage
Input CurrentVIN = 5 V50µA
IN
Input Clamp VoltageIIN = 10 mA
ICL
I
= -10 mA
IN
6
-0.7
0.8V
V
V
3/10
VN05H
ELECTRICAL CHARACTERISTICS (Continued)
PROTECT IO N AND DIAG NO S TIC S
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
(•) Status Voltage Output
STAT
V
USD
V
SCL
I
OV
I
AV
I
OL
T
TSD
T
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determinaion > 100 µs after the switching edge.
Note 1: Above V
reaches thermal shutdown temperature.
Low
Under Voltage Shut
Down
(•)Status Clamp VoltageI
Over CurrentR
Average Current in
Short Circuit
Open Load Current
Level
Termal Shut-Down
Temperature
Reset Temperature125
R
= 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
CC
I
= 1.6 mA0.4v
STAT
= 10 mA
STAT
I
= -10 mA
STAT
< 10 mΩ20A
LOAD
R
< 10 mΩ Tc = 85 oC1.4A
LOAD
5180mA
140
6
-0.7
5.5V
o
o
V
V
C
C
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
temperature returns to about 125
o
C. When the
o
C the switch is
automatically turned on again. To ensur the
protection in all V
conditions and in all the
CC
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above V
= 36V the output voltage is clamped
CC
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -V
thresholds and V
respect to power GND).
is seen by the device. (VIL, V
F
are increased by VF with
STAT
- The undervoltage shutdown level is increased
.
by V
F
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
, VIL and V
IH
STAT
takes
IH
4/10
TRUTH TABLE
INPUTOUTPUTDIAGNOSTIC
Normal OperationL
Open Circuit (No Load)L
Over-temperatureL
Under-voltageX
Figure 1: Waveforms
VN05H
L
H
H
H
X
H
L
H
L
L
L
L
H
H
H
L
H
L
H
H
Figure 2: Over Current Test Circuit
5/10
VN05H
Figure 3: Typical Application Circuit With A Schott ky Diode For Reverse Supply Prot ection
Figure 4: Typical Application Circuit With Separ ate Signal Gr ound
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