The VIPer53-E combines an enhanced current
mode PWM controller with a high voltage
MDMesh Power Mosfet in the same package.
Typical applications cover offline power supplies
with a secondary power capability ranging up to
30W in wide range input voltage, or 50W in single
European voltage range and DIP-8 package, with
the following benefits:
Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 1.Absolute maximum rating
Symbol Parameter Value Unit
V
I
V
V
OSC
I
COMP
I
TOVL
Continuous drain source voltage (TJ= 25 ... 125°C)
DS
Continuous drain currentInternally limitedA
D
Supply voltage0 ... 19V
DD
OSC input voltage range
COMP and TOVL input current range
Electrostatic discharge:
V
ESD
Machine model (R = 0Ω; C = 200pF)
Charged device model
T
T
T
STG
1. In order to improve the ruggedness of the device versus eventual drain overvoltages, a resistance of 1kΩ
1. When mounted on a standard single-sided FR4 board with 50mm² of Cu (at least 35 mm thick) connected
to the DRAIN pin.
2. When mounted on a standard single-sided FR4 board with 50mm² of Cu (at least 35 mm thick) connected
to the device tab.
Thermal Resistance Junction-caseMax220°C/W
thJC
Thermal Resistance Ambient-case Max6080°C/W
thJA
3/36
Electrical characteristicsVIPer53 - E
2 Electrical characteristics
TJ = 25°C, V
= 13V, unless otherwise specified
DD
Table 3.Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
I
DSS
R
DS(on)
C
C
1. On clamped inductive load
2. This parameter can be used to compute the energy dissipated at turn on E
to source voltage V
Drain-source voltage
DSS
Off state drain
current
Static drain-source
On state resistance
t
Fall time
fv
t
Rise time
rv
Drain capacitance
oss
Effective output
Eon
capacitance
and the following formula:
DSon
= 1mA; V
I
D
V
= 500V; V
DS
TJ = 125°C
ID = 1A; V
= 25°C
T
J
T
= 100°C
J
ID = 0.2A; V
ID = 1A; V
= 25V
V
DS
200V < V
E
ton
COMP
COMP
= 0V
COMP
= 4.5V; V
= 0V;
TOVL
= 0V
620V
150µA
0.91
1.7ΩΩ
IN
= 300V
IN
= 300V
(1)
(1)
100ns
50ns
170pF
300
(2)
V
2
DSon
⎛⎞
----------------
⎝⎠
300
according to the initial drain
ton
1.5
< 400V
DSon
1
-- -
C
⋅⋅⋅=
Eon
2
60pF
Table 4.Oscillator section
SymbolParameterTest conditionsMin.Typ.Max. Unit
R
F
OSC1
F
OSC2
V
OSChi
V
OSClo
Oscillator frequency
initial accuracy
Oscillator frequency
total variation
Oscillator peak
voltage
Oscillator valley
voltage
4/36
= 8kΩ; CT = 2.2nF
T
Figure 12 on page 12
= 8kΩ; CT = 2.2nF
R
T
Figure 16 on page 14
= V
V
DD
DDon
T
= 0 ... 100°C
J
... V
DDovp
95100105kHz
;
93100107kHz
9V
4V
VIPer53 - EElectrical characteristics
Table 5.Supply section
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
DSstart
I
DDch1
I
DDch2
I
DDchoff
I
DD0
I
DD1
V
DDoff
V
DDonVDD
V
DDhystVDD
V
DDovp
Drain voltage starting
threshold
Startup charging current
Startup charging current
Startup charging current
in thermal shutdown
Operating supply current
not switching
Operating supply current
switching
V
undervoltage
DD
shutdown threshold
startup threshold
threshold hysteresis
V
Overvoltage
DD
shutdown threshold
Table 6.Error amplifier section
V
= 5V; I
DD
V
= 0 ... 5V; V
DD
Figure 5 on page 10
= 10V; V
V
DD
V
= 5V; V
DD
> TSD - T
T
J
= 0kHz; V
F
sw
= 100kHz
F
sw
= 0mA
DD
= 100V
DS
= 100VFigure 5.
DS
= 100VFigure 7.
DS
HYST
= 0V
COMP
3450V
-12mA
-2mA
0mA
811mA
9mA
Figure 5 on page 107.58.49.3V
Figure 5.10.211.512.8V
Figure 5.2.63.1V
Figure 5.171819V
SymbolParameterTest conditionsMin.Typ.Max. Unit
= 0mA
I
V
DDregVDD
∆V
DDreg
G
BW
AV
OL
G
m
V
COMPlo
V
COMPhi
I
COMPlo
I
COMPhi
1. In order to insure a correct stability of the error amplifier, a capacitor of 10nF (minimum value: 8nF) should
always be present on the COMP pin.
regulation point
VDD regulation point
total variation
Unity gain bandwidth
Voltage gainI
DC transconductanceV
Output low levelI
Output high levelI
Output sinking current
Output sourcing current
COMP
Figure 11. on page 11
I
= 0mA; TJ = 0 ... 100°C2%
COMP
From Input = V
V
COMP
I
= 0mA Figure 14 and 15
COMP
= 0mA Figure 14 and 154045dB
COMP
= 2.5V Figure 11.11.41.8mS
COMP
= -0.4mA; V
COMP
= 0.4mA; VDD=14V
COMP
= 2.5V; V
V
COMP
to Output =
DD
= 16V0.2V
DD
(1)
= 16V
DD
Figure 11. on page 11
= 2.5V; VDD= 14V
V
COMP
Figure 11.
14.51515.5V
700kHz
4.5V
-0.6mA
0.6mA
5/36
Electrical characteristicsVIPer53 - E
Table 7.PWM comparator section
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
= 1 ... 4 V Figure 10.
H
COMP
V
COMPosVCOMP
I
Dlim
I
Dmax
V
COMPbl
t
t
t
ONmin1
t
ONmin2
V
COMPoff
∆V
Peak drain current
limitation
Drain current
capability
Current sense delay to
t
d
Turn-Off
V
COMP
change threshold
Blanking timeV
b1
Blanking timeV
b2
Minimum On timeV
Minimum On timeV
V
COMP
Threshold
/ ∆I
COMP
Offset
blanking time
Shutdown
DPEAK
COMP
/dt = 01.722.3V/A
dI
D
dI
/dt = 0 Figure 10. on page 11 0.5V
D
I
= 0mA; V
COMP
Figure 10.
/dt = 0
dI
D
= V
V
COMP
/dt = 01.61.92.3A
dI
D
= 1A250ns
I
D
COMPovl
TOVL
; V
= 0V
= 0V
TOVL
1.722.3A
Figure 6 on page 101V
COMP
COMP
COMP
COMP
< V
> V
< V
> V
COMPBL
COMPBL
COMPBL
COMPBL
Figure 6.300400500ns
Figure 6.100150200ns
450600750ns
250350450ns
Figure 9 on page 110.5V
Table 8.Overload protection section
SymbolParameterTest conditionsMin.Typ. Max. Unit
V
COMPovl
V
V
1. V
DIFFovl
OVLth
t
OVL
COMPovl
V
overload
COMP
threshold
V
COMPhi
to V
COMPovl
voltage difference
V
overload
TOVL
threshold
Overload delay
is always lower than V
I
TOVL
Figure 4 on page 9
I
TOVL
= 0mA
= V
V
DD
Figure 4.
Figure 4.4V
C
OVL
COMPhi
(1)
= 0mA
... V
DDoff
(1)
DDreg
= 100nF Figure 4.
4.35V
;
50150250mV
8ms
Table 9.Over temperature Protection Section
SymbolParameterTest ConditionsMin.Typ.Max.Unit
T
T
HYST
Thermal shutdown
SD
temperature
Thermal shutdown
hysteresis
Figure 7 on page 10140160°C
Figure 7 on page 1040°C
6/36
VIPer53 - EPin connections and function
V
S
3 Pin connections and function
Figure 1.Pin connection (top view)
OSC
SOURCE
SOURCE
1
2
3
8
7
6
54
TOVLCOMP
VDD
NC
DRAIN
DIP-8PowerSO-10
Figure 2.Current and voltage conventions
I
DD
VDD
I
OSC
OSC
15V
DD
I
V
OSC
TOVL
V
TOVL
I
COMP
SOURCECOMPTOVL
DRAIN
I
D
V
D
V
COMP
7/36
Pin connections and functionVIPer53 - E
Table 10.Pin function
Pin NamePin function
Power supply of the control circuits. Also provides the charging current of the external
capacitor during start-up. The functions of this pin are managed by four threshold
voltages:
V
DD
SOURCEPower MOSFET source and circuit ground reference.
DRAIN
COMP
TOVL
- VDDon: Voltage value at which the device starts switching (Typically 11.5 V).
- VDDoff: Voltage value at which the device stops switching (Typically 8.4 V).
- VDDreg: Regulation voltage point when working in primary feedback
(Trimmed to 15 V).
- VDDovp: Triggering voltage of the overvoltage protection (Trimmed to 18 V).
Power MOSFET drain. Also used by the internal high voltage current source during the
start-up phase to charge the external V
capacitor.
DD
Input of the current mode structure, and output of the internal error amplifier. Allows
the setting of thedynamic characteristic of the converter through an external passive
network. The useful voltage range extends from 0.5V to 4.5V. The Power MOSFET is
always off below 0.5V, and the overload protection is triggered if the voltage exceeds
4.35V. This action is delayed by the timing capacitor connected tothe TOVL pin.
Allows the connection of an external capacitor for delaying the overload protection,
which is triggered by a voltage on the COMP pin higher than 4.35V.
OSCAllows the setting of the switching frequency through an external Rt-Ct network.