ST VIPer53DIP, VIPer53SP User Manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

VIPer53DIP

®

TYPICAL OUTPUT POWER CAPABILITY

TYPE

European

(195 - 265 Vac) DIP-8 50W 30W PowerSO-10

™

Note: Above power capabilities are given under adequate

thermal conditions

65W 40W

US / Wide range

(85 - 265 Vac)

FEATURES

n

SWITCHING FREQUENCY UP TO 300 kHz

n

CURRENT LIMITATION

n

CURRENT MODE CONTROL WITH ADJUSTABLE LIMITATION

n

SOFT START AND SHUT DOWN CONTROL

n

AUTOMATIC BURST MODE IN STAND-BY

CONDITION (“BLUE ANGEL” COMPLIANT)

n

UNDERVOLTAGE LOCKOUT WITH HYSTERESIS

n

HIGH VOLTAGE STARTUP CURRENT SOURCE

n

OVERTEMPERATUR E PR O TECTION

n

OVERLOAD AND SHORT-CIRCUIT CONTROL

VIPer53SP

OFF LINE PRIMARY SWITCH

10

1

DIP-8

DESCRIPTION

The VIPer53 combines in the same package an enhanced current mode PWM controller with a high voltage MDMesh Power Mosfet. Typical applications cover off line power supplies with a secondary power capability ranging up to 30W in wide range input voltage or 50W in single European voltage range and DIP-8 package, with the following benefits:

– Overload and short circuit controlled by

feedback monitoring and delayed device reset.

– Efficient standby mode by enhanced pulse

skipping.

– Primary regulation or secondary loop failure

protection through high gain error amplifier.

PowerSO-10™

BLOCK DIAGRAM

OSC DRAIN

ON/OFF

OSCILLATOR

PWM

STANDBY

OVERLOAD

LATCH

S

R1

FF

R2

R3 R4 R5

BLANKING TIME

Q

4.5V

SELECTION

150/400ns

BLANKING

4V

PWM

COMPARATOR

8V

125k

TOVL COMP SOURCE

1V

H

0.5V

COMP

CURRENT

AMPLIFIER

OVERTEMP.

DETECTOR

UVLO

11.5V

8.4/

15V

18V

COMPARATOR

ERROR

AMPLIFIER

OVERVOLTAGE

COMPARATOR

0.5V

4.35V

COMPARATOR

VDD

June 2004 1/24

VIPer53DIP / VIPer53SP

PIN FUNCTION

Name Function

Power supply of the control circuits. Also provides the charging current of the external capacitor during start-up. The functions of this pin are managed by four threshold voltages:

: Voltage value at which the device starts switching (Typically 11.5 V).

- V

V

DD

SOURCE Power Mosfet source and circuit ground reference.

DRAIN

COMP

TOVL

OSC Allows the setting of the switching frequency through an external Rt-Ct network.

DDon

- V

: Voltage value at which the device stops switching (Typically 8.4 V).

DDoff

- V

: Regulation voltage point when working in primary feedback (Trimmed to 15 V).

DDreg

: Triggering voltage of the overvoltage protection (Trimmed to 18 V).

DDovp

Power Mosfet drain. Also used by the internal high voltage current source during the start-up phase, for charging the external V

capacitor.

DD

Input of the current mode structure, and output of the internal error amplifier. Allows the setting of the dynamic characteristic of the converter through an external passive network. Useful voltage range extends from 0.5 V to 4.5 V. The Power Mosfet is always off below 0.5 V, and the overload protection is triggered if the voltage exceeds 4.35V. This action is delayed by the timing capacitor connected to the TOVL pin.

Allows the connection of an external capacitor for delaying the overload protection, which is triggered by a voltage on the COMP pin higher than 4.35V.

CURRENT AND VOLTAGE CONVENTIONS

I

DD

I

OSC

V

DD

V

OSC

V

TOVL

CONNECTION DIAGRAM

OSC

SOURCE

1

2

3

8

TOVLCOMP

7

VDD

6

NC

DRAIN

54

I

D

VDD

15V

I

TOVL

V

COMP

DRAIN

V

SOURCECOMPTOVL

I

COMP

DRAIN

NC NC NC

VDD

TOVL

DS

1 2 3 4 5

10

SOURCE

9

NC

8

NC

7

OSC

6

COMP

ORDER CODES

PACKAGE

DIP-8 PowerSO-10™

2/24

DIP-8

PowerSO-10™

TUBE

VIPer53DIP -

VIPer53SP VIPer53SP13TR

TAPE and REEL

VIPer53DIP / VIPer53SP

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

I

D

V

DD

V

OSC

I

COMP

I

TOVL

V

ESD

T T

T

stg

Note: 1. In or der t o imp rov e th e rugg ed ness of t he devic e ver su s ev entua l dr ain overv olt ages , a r esi stan ce of 1 k Ω shou l d be i nse rted in

THERMA L D ATA

Symbol Parameter Max Value Unit

R

thj-case

R

thj-amb

R

thj-case

R

thj-amb

Note: 2. When mounted on a standard singl e-sided FR4 board with 50mm² of C u (at l east 35 µm thick) connected to the DRAIN pin.

3. When mounted on a st andard sin gl e-sided FR 4 board with 50mm² of Cu (at l east 35 µm thick) connected to the device tab.

Continuous Drain Source Voltage (Tj=25 ... 125°C) (See note 1)

-0.3 ... 620 V Continuous Drain Current Internally limited A Supply Voltage 0 ... 19 V OSC Input Voltage Range

0 ... V

DD

COMP and TOVL Input Current Range (See note 1) -2 ... 2 mA Electrostatic Discharge:

Machine Model (R=0Ω; C=200pF) Charged Device Model

Junction Operating Temperature Internally limited °C

j

Case Operating Temperature -40 to 150 °C

c

200

1.5

Storage Temperature -55 to 150 °C

series wit h the TOVL pin.

DIP-8 20 °C/W DIP-8 (See note 2) 80 °C/W

PowerSO-10™

2 °C/W

PowerSO-10™ (See note 3) 60 °C/W

V

kV

3/24

VIPer53DIP / VIPer53SP

ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=13V, unless otherwise specified)

POWE R SECT ION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

DSS

I

DSS

R

DS(on)

t

fv

t

rv

C

oss

C

Eon

Note 4. On clamped indu ct i ve load

5. This parameter c an be used to compute the ener gy dissipated at turn on E

Drain-Source Voltage Off State Drain Current

Static Drain-Source On State Resistance

Fall Time

Rise Time Drain Capacitance

Effective Output Capacitance

and the following formula:

E

ton

=1mA; V

I

D

=500V; V

V

DS

=1A; V

I

D

T

=25°C

j

T

=100°C

j

I

=0.2A; VIN=300V

D

(See figure 1 and note 4)

=1A; VIN=300V

I

D

(See figure 1 and note 4)

=25V

V

DS

200V < V

1

=

⋅⋅⋅

-- - C 2

Eon

300

2

=0V

COMP

=0V; Tj=125°C

COMP

=4.5V; V

COMP

< 400V (See note 5)

DSon

V

DSon



--------------- -



300

TOVL

1.5

620 V

=0V

0.9 1

100 ns

50 ns

170 pF

60 pF

accordin g to the initial dr ai n to source voltage V

ton

150 µA

1.7

Ω Ω

DSon

OSCILLATOR S E C TI ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

F

OSC1

F

OSC2

V

OSChi

V

OSClo

Oscillator Frequency Initial Accuracy

Oscillator Frequency Total Variation

=8kΩ; CT=2.2nF (See figure 9)

R

T

=8kΩ; CT=2.2nF (See figure 12)

R

T

V

DD=VDDon

... V

; Tj=0 ... 100°C

DDovp

95 100 105 kHz

93 100 107 kHz

Oscillator Peak Voltage 9 V Oscillator Valley Voltage 4 V

4/24

VIPer53DIP / VIPer53SP

ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=13V, unless otherwise specified)

SUPPLY SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

DSstart

I

DDch1

I

DDch2

I

DDchoff

I

DD0

I

DD1

V

DDoff

V

DDon

V

DDhyst

V

DDovp

Drain Voltage Starting Threshold

Startup Charging Current Startup Charging Current Startup Charging Current

in Thermal Shutdown Operating Supply Current

Not Switching Operating Supply Current

Switching V

Undervoltage

DD

Shutdown Threshold VDD Startup Threshold

VDD Threshold Hysteresis

V

Overvoltage

DD

Shutdown Threshold

V

=5V; IDD=0mA

DD

=0 ... 5V; VDS=100V (See figure 2)

V

DD

=10V; VDS=100V (See figure 2)

V

DD

=5V; VDS=100V (See figure 5)

V

DD

T

> TSD - T

j

Fsw=0kHz; V

F

sw

=100kHz

HYST

COMP

=0V

0mA

34 50 V

-12 mA

-2 mA

811mA

9mA

(See figure 2) 7.5 8.4 9.3 V (See figure 2) 10.2 11.5 12.8 V (See figure 2) 2.6 3.1 V

(See figure 7) 17 18 19 V

ERROR AMPLIFIER SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

DDreg

∆V

DDreg

G

BW

AV

G

V

COMPlo

V

COMPhi

I

COMPlo

I

COMPhi

Note 6. In order to insure a co rrect stability of the error amplifier, a capacitor of 10nF (minimum value: 8nF) should always be present on

VDD Regulation Point I VDD Regulation Point

Total Variation

Unity Gain Bandwidth

Voltage Gain

OL

DC Transconductance

m

Output Low Level Output High Level Output Sinking Current Output Sourcing Current

the COMP pin .

=0mA (See figure 3)

COMP

I

=0mA; Tj=0 ... 100°C

COMP

From Input =V I

=0mA (See figure 10)

COMP

=0mA (See figure 10)

I

COMP

=2.5V (See figure 3)

V

COMP

=-0.4mA; VDD=16V

I

COMP

=0.4mA; VDD=14V (See note 6)

I

COMP

=2.5V; VDD=16V (See figure 3)

V

COMP

=2.5V; VDD=14V (See figure 3)

V

COMP

to Output = V

DD

COMP

14.5 15 15.5 V

2%

700 kHz

40 45 dB

1 1.4 1.8 mS

0.2 V

4.5 V

-0.6 mA

0.6 mA

5/24

VIPer53DIP / VIPer53SP

ELECTRICAL CHARACTERISTICS (Tj = 25 °C, VDD = 13 V, unless otherwise specified)

PWM COMPARATOR SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

=1 ... 4 V (See figure 8)

H

COMP

V

COMPosVCOMP

I

Dlim

I

Dmax

t

d

V

COMPbl

t

b1

t

b2

t

ONmin1

t

ONmin2

V

COMPoff

∆V

Peak Drain Current Limitation

Drain Current Capability Current Sense Delay to

Turn-Off V

COMP

Change Threshold Blanking Time Blanking Time Minimum On Time Minimum On Time V

COMP

Threshold

/ ∆I

COMP

DPEAK

Offset dID/dt=0 (See figure 8)

Blanking Time

Shutdown

COMP

dI

/dt=0 1.7 2 2.3 V/A

D

0.5 V

=0mA; V

I

COMP

dI

/dt=0 1.7 2 2.3 A

D

V

COMP=VCOMPovl

dI

/dt=0 (See figure 8) 1.6 1.9 2.3 A

D

ID=1A

=0V (See figure 8)

TOVL

; V

=0V

TOVL

250 ns

(See figure 11) 1 V V

COMP

V

COMP

V

COMP

V

COMP

< V > V < V > V

COMPBL COMPBL COMPBL COMPBL

(See figure 11) (See figure 11)

300 400 500 ns 100 150 200 ns 450 600 750 ns 250 350 450 ns

(See figure 6) 0.5 V

OVERLOAD PROTECTION SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

Overload

V

COMPovl

V

DIFFovl

V

OVLth

t

OVL

Note 7. V

COMP

Threshold V

COMPhi

Voltage Difference V

Overload

TOVL

Threshold Overload Delay

is always lower than V

COMPovl

to V

COMPovl

I

=0mA (See figure 4 and note 7)

TOVL

VDD=V

DDoff

(See figure 4 and note 7)

... V

DDreg

; I

TOVL

=0mA

50 150 250 mV

4.35 V

(See figure 4) 4 V

=100nF (See figure 4)

COMPhi

C

OVL

.

8ms

OVERTEMPERATURE PROTECTION SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

HYST

SD

Thermal Shutdown Tem pera ture

Thermal Shutdown Hysteresis

(See fig. 5) 140 160 °C

(See fig. 5) 40 °C

6/24

Figure 1: Rise and Fall Time

I

D

V

DS

90%

t

fv

VIPer53DIP / VIPer53SP

C<<C

OSS

CLD

t

VDD

OSC

15V

t

rv

DRAIN

300V

SOURCECOMPTOVL

10%

Figure 2: Start-up VDD Current

I

DD

I

DD0

V

DDhyst

I

DDch2

V

DDoff

V

VDS = 100 V

F

I

DDch1

Figure 3: Output Characteristics

I

COMP

I

COMPhi

Slope = Gm

DDon

= 0 kHz

SW

t

Figure 4: Overload event

V

DD

Normal

operati on

V

DDon

V

DDoff

V

DD

V

COMP

V

COMPhi

V

COMPovl

V

TOVL

V

OVLth

t

OVL

Abnormal operation

V

DIFFovl

t

I

COMPlo

V

0

DDreg

V

DD

DS

Not

switching

Switching

t

7/24

VIPer53DIP / VIPer53SP

Figure 5: Thermal Shutdown

T

j

T

SD

TSD-T

HYST

V

DD

V

DDon

V

COMP

Automatic

startup

Figure 7: Overvoltage Event

V

DD

V

DDovp

t

V

COMP

Abnormal operation

operation

t

V

DS

Switching

Not

switching

t

Normal

t

Figure 6: Shut Down Action

V

OSC

V

OSChi

V

OSClo

V

COMP

V

COMPoff

I

D

Figure 8: Comp Pin Gain and Offset

I

Dpeak

I

Dlim

I

Dmax

t

V

COMPos

Slope = 1 / H

COMP

V

COMPovl

V

COMPhi

V

COMP

8/24