ST TN2540, TXN625, TYN625, TYN825, TYN1225 User Manual

TN2540, TXN625

TYN625, TYN825, TYN1225

Standard 25 A SCRs

Features

■ On-state rms current, I

■ Repetitive peak off-state voltage, V

600 to 1200 V

■ Triggering gate current, I

■ Insulated package TO-220AB ins

– Insulating voltage 2500 V rms – UL1557 certified (file ref. E81734)

T(RMS)

GT

25 A

DRM/VRRM

40 mA

Description

These standard 25 A SCRs are suitable for general purpose applications.

Using clip assembly technology, they provide a superior performance in surge current capabilities.

TXN625RG is packaged in TO-220AB ins.

A

K

A

G

D2PAK

(TN2540-x00G)

G

K

A

K

A

G

A

TO-220AB

(TYNx25RG)

G

A

K

TO-220AB ins

(TXN625RG)

Table 1. Device summary

Volta g e V

Order code

DRM/VRRM

Sensitivity I

GT

Package

600 V 800 V 1200 V

TN2540-600G-TR Y 40 mA D

TN2540-800G-TR Y 40 mA D

2

PA K

TXN625RG Y 40 mA TO-220AB ins

TYN625RG Y 40 mA TO-220AB

TYN825RG Y 40 mA TO-220AB

TYN1225RG Y 40 mA TO-220AB

February 2012 Doc ID 7478 Rev 8 1/10

www.st.com

10

Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

On-state rms current (180 °Conduction angle)

TO-220AB,

2

PA K

D

T

= 100 °C

c

25 A

TO-220AB ins Tc = 83 °C

I

T(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

T

V

RGM

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Average on-state current (180 °Conduction angle) Tc = 100 °C 16 A

t

= 8.3 ms

Non repetitive surge peak on-state current

2

tI2t Value for fusing tp = 10 ms Tj = 25 °C 450 A

Critical rate of rise of on-state current

= 2 x IGT, tr ≤ 100 ns

I

G

p

= 10 ms 300

t

p

F = 60 Hz T

= 25 °C

T

j

= 125 °C 50 A/µs

j

314

Peak gate current tp = 20 µs Tj = 125 °C 4 A

Average gate power dissipation Tj = 125 °C 1 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

- 40 to + 150

- 40 to + 125

Maximum peak reverse gate voltage 5 V

Symbol Test conditions Value Unit

MIN. 4

I

GT

V

GT

V

GD

I

H

I

L

dV/dt V

V

TM

V

t0

R

d

I

DRM

I

RRM

VD = 12 V RL = 33 Ω

VD = V

RL = 3.3 kΩ Tj = 125 °C MIN. 0.2 V

DRM

IT = 500 mA Gate open MAX. 50 mA

IG = 1.2 x I

= 67% V

D

GT

Gate open Tj = 125 °C MIN. 1500 V/µs

DRM

ITM = 50 A tp = 380 µs Tj = 25 °C MAX. 1.6 V

Threshold voltage Tj = 125 °C MAX. 0.77 V

Dynamic resistance Tj = 125 °C MAX. 14 mΩ

Tj = 25 °C

V

= V

DRM

RRM

= 125 °C 4 mA

T

j

MAX. 40

MAX. 1.3 V

MAX. 90 mA

5µA

MAX.

mA

A

°C

2

S

2/10 Doc ID 7478 Rev 8

TN2540, TXN625, TYN625, TYN825, TYN1225 Characteristics

5

Table 4. Thermal resistances

Symbol Parameter Value Unit

R

th(j-c)

th(j-a)

Junction to case (DC)

Junction to ambient (DC)

(1)

S

= 1 cm

1. S = Copper surface under tab.

Figure 1. Maximum average power

dissipation versus average on-state current

P(W)

22

20

18

16

14

12

10

8

6

4

2

0

0246 810121416

I (A)

T(AV)

360°

α

Figure 3. Average and DC on-state current

versus ambient temperature

I (A)

T(AV)

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

DC

α = 180°

D2PAK

TO-220AB

TO-220ABins

T (°C)

amb

0 25 50 75 100 12

2

D

PAK, TO-220AB

1.0 °C/W

TO-220AB ins 2.0

2

D2PA K 4 5

°C/W

TO-220AB, TO-220AB ins 60

Figure 2. Average and DC on-state current

versus case temperature

I (A)

T(AV)

28 26 24 22 20 18 16 14 12 10

8 6 4 2 0

DC

TO-220ABins

α = 180°

T (°C)

case

0 25 50 75 100 125

D2PAK

TO-220AB

Figure 4. Relative variation of thermal

impedance versus pulse duration

2

(D

PAK, and TO-220AB)

K=[Z /R

1.00

0.10

0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th th

Z

th(j-c)

]

Z

th(j-a)

t (s)

p

Doc ID 7478 Rev 8 3/10