ST TN1625, TYN616, TYN816 User Manual

TN1625

TYN616, TYN816

16 A standard SCRs

Features

■ I

■ V

■ I

=16 A

T(RMS)

DRM/VRRM

= 25 mA

GT

= 600 to 1000 V

A

G

K

Description

The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications.

Using clip assembly technology, they provide a superior performance in surge current

K

A

capabilities.

(TN1625-x00G)

Table 1. Device summary

Parameter

V

DRM/VRRM

Sensitivity 25 25 25 mA

TN1625-600G

TYN616RG TYN816RG

600 800 1000 V

A

G

D2PAK

TN1625-1000G

K

A

G

TO-220AB

(TYNx16RG)

Unit

A

November 2007 Rev 6 1/9

www.st.com

9

Characteristics TN1625, TYN616, TYN816

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

T(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

T

V

RGM

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

RMS on-state current (180 °Conduction angle) Tc = 110 °C 16 A

Average on-state current (180 °Conduction angle) Tc = 110 °C 10 A

t

= 8.3 ms

Non repetitive surge peak on-state current

2

tI2t Value for fusing tp = 10 ms Tj = 25 °C 180 A

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

p

tp = 10 ms 190

F = 60 Hz T

= 25 °C

T

j

= 125 °C 50 A/µs

j

200

Peak gate current tp = 20 µs Tj = 125 °C 4 A

Average gate power dissipation Tj = 125 °C 1 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

- 40 to + 150

- 40 to + 125

Maximum peak reverse gate voltage 5 V

Symbol Test Conditions Value Unit

I

GT

VD = 12 V RL = 33 Ω

V

GT

V

I

dV/dt V

V

R

I

DRM

I

RRM

Table 4. Thermal resistance

VD = V

GD

IT = 500 mA Gate open MAX. 40 mA

H

I

IG = 1.2 x I

L

= 67 % V

D

ITM = 32 A tp = 380 µs Tj = 25 °C MAX. 1.6 V

TM

Threshold voltage Tj = 125 °C MAX. 0.77 V

t0

Dynamic resistance Tj = 125 °C MAX. 23 mΩ

d

V

DRM

RL = 3.3 kΩ Tj = 125 °C MIN. 0.2 V

DRM

GT

Gate open Tj = 125 °C MIN. 500 V/µs

DRM

= V

RRM

Tj = 25 °C

T

= 125 °C 2 mA

j

MIN. 2

MAX. 25

MAX. 1.3 V

MAX. 60 mA

5µA

MAX.

mA

A

°C

2

S

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

S = copper surface under tab

Junction to case (DC) 1.1 °C/W

S = 01 cm

2

D2PA K 4 5

Junction to ambient (DC)

TO-220AB 60

2/9

°C/W

TN1625, TYN616, TYN816 Characteristics

Figure 1. Maximum average power

dissipation versus average on-state current

P(W)

16

α = 180°

14

12

10

8

6

4

2

0

024681012

I (A)

T(AV)

360°

α

Figure 3. Average and D.C. on-state current

versus ambient temperature (copper surface under tab: S=1cm

2

(D

PAK )

I (A)

T(AV)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

α = 180°

0 25 50 75 100 125

D.C.

T (°C)

amb

Figure 2. Average and D.C. on-state current

versus case temperature

I (A)

T(AV)

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125

D.C.

α = 180°

T (°C)

case

Figure 4. Relative variation of thermal

impedance versus pulse duration

2

)

K=[Z /R

1.00

0.10

0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th th

Z

th(j-c)

]

Z

th(j-a)

t (s)

p

Figure 5. Relative variation of gate trigger

current, holding current and latching current versus junction temperature

I,I,I[T] /

GT H L j

2.5

2.0

1.5

1.0

0.5

0.0

-40 -20 0 20 40 60 80 100 120 140

I ,I ,I [T =25°C]

GT H L j

I

GT

IH& I

L

T (°C)

j

Figure 6. Surge peak on-state current versus

number of cycles

I (A)

TSM

200

180

160

140

120

100

80

60

40

20

0

1 10 100 1000

Repetitive T =110°C

C

Non repetitive T initial=25°C

j

Number of cycles

3/9

t =10ms

p

One cycle