ST TYN612M User Manual
TYN612M
12 A SCR
Main features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
(min / max) 1.5 / 5 mA
GT
12 A
600 V
Description
A
K
TO-220AB
TYN612MRG
G
A
A
G
K
TO-220FPAB
TYN612MFP
The TYN612M SCR is suitable to fit modes of
control found in applications such as voltage
regulation circuits for motorbikes, overvoltage
Order codes
crowbar protection, motor control circuits in power
tools and kitchen aids, inrush current limiting
circuits, capacitive discharge ignition.
The insulated fullpack package allows a back to
Part Numbers Marking
TYN612MRG TYN612M
TYN612MFP TYN612MFP
back configuration.
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
G
A
K
I
T(RMS)
I
T(AV)
I
TSM
²
tI
I
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
²
t Value for fusing tp = 10 ms Tj = 25° C 72 A
Critical rate of rise of on-state current
= 2 x IGT , tr ≤ 100 ns
I
G
TO-220AB T
TO-220FPAB T
TO-220AB T
TO-220FPAB T
= 8.3 ms
t
p
= 10 ms 120
t
p
F = 60 Hz T
Peak gate current tp = 20 µs Tj = 125° C 4 A
Average gate power dissipation Tj = 125° C 1 W
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage 5 V
= 105° C 12
c
= 70° C 12
c
= 105° C 8
c
= 70° C 8
c
125
= 25° C
T
j
= 125° C 50 A/µs
j
- 40 to + 150
- 40 to + 125
A
A
A
° C
2
S
April 2007 Rev 4 1/8
www.st.com
8
Characteristics TYN612M
1 Characteristics
Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol Test Conditions Value Unit
MIN. 1.5
I
GT
VD = 12 V RL = 140 Ω
MAX. 5
MIN. 0.5 V
V
GT
VD = 12 V RL = 140 Ω
TYP. 0.7
MAX. 1.3
V
GD
I
H
I
L
dV/dt V
V
TM
V
t0
R
I
DRM
I
RRM
Table 3. Thermal resistance
VD = V
IT = 500 mA Gate open MAX. 20 mA
IG = 1.2 I
= 67 % V
D
ITM = 24 A tp = 380 µs Tj = 25° C MAX. 1.6 V
Threshold voltage Tj = 125° C MAX. 0.85 V
Dynamic resistance Tj = 125° C MAX. 30 mΩ
d
V
DRM
RL = 3.3 kΩ Tj = 125° C MIN. 0.2 V
DRM
MAX. 40 mA
5µA
MAX.
= V
GT
RRM
Gate open Tj =125° C MIN. 50 V/µs
DRM
Tj = 25° C
= 125° C 2 mA
T
j
mA
Symbol Parameter Value Unit
TO-220AB 1.3
R
th(j-c)
Junction to case (DC)
TO-220FPAB 4.5
TO-220AB 55
R
th(j-a)
Figure 1. Maximum average power
P(W)
12
α = 180°
11
10
9
8
7
6
5
4
3
2
1
0
0123456789
Junction to ambient (DC)
dissipation versus average
on-state current
I (A)
T(AV)
TO-220FPAB 55
Figure 2. Average and D.C. on-state current
versus case temperature
(TO-220AB)
I (A)
T(AV)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
D.C.
α = 180°
T (°C)
C
° C/W
° C/W
2/8
TYN612M Characteristics
Figure 3. Average and D.C. on-state current
versus case temperature
(TO-220FPAB)
I (A)
T(AV)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
D.C.
= 180°
α
T (°C)
C
Figure 5. Relative variation of thermal
impedance versus pulse duration
(TO-220FPAB)
K=[Z /R ]
1.E+00
1.E-01
1.E-02
th th
R
th(j-c)
R
th(j-a)
t (s)
p
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Figure 7. Surge peak on-state current versus
number of cycles
I (A)
TSM
130
120
110
100
90
80
70
60
Repetitive
50
T =105°C
C
40
30
20
10
0
1 10 100 1000
Non repetitive
T initial=25°C
j
Number of cycles
tp=10m s
O ne cycle
Figure 4. Relative variation of thermal
impedance versus pulse duration
(TO-220AB)
K=[Z /R ]
1.E+00
1.E-01
1.E-02
th th
R
th(j-c)
R
th(j-a)
t (s)
p
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Figure 6. Relative variation of gate trigger
current, holding current, latching
current and gate trigger voltage
versus junction temperature
(typical values)
IGT,IH,IL,VGT[Tj]/IGT,IH,IL,VGT[Tj=25°C]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
GT
IH& I
L
VGT
T (°C)
j
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 8. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I²t
22
I (A), I t (A s)
TSM
1000
100
t (ms)
10
0.01 0.10 1.00 10.00
P
T initial=25°C
j
I
TSM
2
I t
3/8
Loading...