ST TYN606, TYN1006 User Manual

TYN606

®

STANDARD

Table 1: Main Features

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

6A

600 and 1000 V

15 mA

DESCRIPTION

The TYN606 and TYN1006 family of Silicon
Controlled Rectifiers are high performance glass
passivated technology.

This general purpose Family of Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.

A

G

K

K

A

G

TO-220AB

Table 2: Order Codes

Part Numbers Marking

TYN606RG TYN606

TYN1006RG TYN1006

TYN1006

6A SCRS

A

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

T

I

T(RMS)

IT

(AV)

I

TSM

I

dI/dt

I

GM

P

G(AV)

P

GM

V

DRM

V

RRM

T

T

T

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

Non repetitive surge peak on-state
current

²

tI²t Value for fusing

Critical rate of rise of on-state current
I

= 100 mA , dIG/dt = 0.1 A/µs

G

Peak gate current

Average gate power dissipation

Maximum gate power

Repetitive peak off-state voltage

stg

Storage junction temperature range
Operating junction temperature range

j

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

L

= 8.3 ms

t

p

t

= 10 ms

p

= 10 ms Tj = 25°C

t

p

t

= 20 µs Tj = 125°C

p

= 20 µs Tj = 125°C

t

p

TYN606

TYN1006 1000

= 110°C

c

T

= 110°C

c

T

= 25°C

j

= 125°C

T

j

T

= 125°C

j

T

= 125°C

j

6A

3.8 A

73

70

24.5

50 A/µs

4A

1W

10 W

600

- 40 to + 150

- 40 to + 125

A

A

V

°C

2

S

REV. 2February 2006

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TYN606 / TYN1006

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit

I

GT

V

GT

V

GD

t

gt

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

t

q

VD = 12 V (D.C.) RL = 33 Ω

VD = V

VD = V

RL = 3.3 kΩ T

DRM

IG = 40 mA dIG/dt = 0.5 A/µs

DRM

IT = 100 mA Gate open

IG = 1.2 x IGT

Linear slope up to:
V

= 67 % V

D

Gate open

DRM

ITM = 12 A tp = 380 µs

V

= V

DRM

VD = 67 % V
dI

TM

RRM

DRM ITM

= 12 A VR = 25 V

/dt = 30 A/µs dVD/dt = 50 V/µs

= 110°C

j

= 110°C

T

j

Tj = 25°C

T

= 110°C

j

= 110°C

T

j

MAX. 15 mA

MAX. 1.5 V

MIN. 0.2 V

TYP. 2 µs

MAX. 30 mA

TYP. 50 mA

MIN. 200 V/µs

MAX. 1.6 V

10 µA

MAX.

2mA

TYP. 70 µs

Table 5: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1: Maximum average power dissipation
versus average on-state current

P(W)

7

6

5

4

α = 30°

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Junction to case (D.C.) 2.5 °C/W

Junction to ambient 60 °C/W

Figure 2: Correlation between maximum
average power dissipation and maximum

α = 60°

α = 90°

α = 120°

I (A)

T(AV)

α = 180°

allowable temperature (T

P(W)

7

α = 180°

DC

360°

α

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140

R = 15°C/W

th

R = 10°C/W

th

T (°C)

amb

amb

and T

R = 5°C/W

th

lead

)

T (°C)

lead

R = 0°C/W

th

110

115

120

125

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