TYN1212
12 A SCR
Features
■ On-state rms current 12 A
■ Gate trigger current <15 mA
■ Repetitive peak voltage 1200 V
Description
The TYN1212 is suitable for state relays and high
power motor control.
A
G
K
A
G
A
K
TO-220AB
TYN1212
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
(min. / max) <15 mA
GT
12 A
1200 V
November 2011 Doc ID 022532 Rev 1 1/5
www.st.com
5
Characteristics TYN1212
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
On-state rms current (180 °C conduction angle) Tc = 80 °C 12 A
Non repetitive surge peak on-state current tp = 10 ms Tj = 25 °C 120 A
TSM
²
tI²t Value for fusing tp = 10 ms 72 A
I
dI/dt Critical rate of rise of on-state current 100 A/µs
V
/
DRM
V
T
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Repetitive peak off-state voltage 1200 V
RRM
Storage junction temperature range
stg
T
Operating junction temperature range
j
- 40 to + 125
- 40 to + 125
Symbol Test conditions Value Unit
I
VD = 12 V, RL = 33 Ω pulse duration >20 µs Tj = 25 °C MAX. 15 mA
GT
V
V
dV/dt Linear slope V
V
I
DRM
I
RRM
Table 4. Thermal resistance
VD = 12 V, RL = 33 Ω pulse duration >20 µs
GT
VD = V
GD
IT = 100 mA Gate open Tj = 25 °C MAX. 30 mA
I
H
TMITM
t
gt
t
q
= 24 A tp = 10 ms Tj = 25 °C MAX. 1.6 V
V
DRM
Turn-on time
IG = 40 mA, dIG/dt = 0.45 A/µs, IT = 24 A V
Circuit commutated turn-off time
= 10 A, VR = 25 V, dIR/dt = 30 A/µs dV/dt = 50 V/µs
I
T
, RL = 3.3 kΩ pulse duration >20 Tj = 125 °C MIN. 0.2 V
DRM
= 67% V
D
= V
= 1200 V gate open
RRM
Gate open Tj =125 °C MIN. 200 V/µs
DRM
DRM
T
= 25 °C MAX. 1.5 V
j
T
= 25 °C
j
= 125 °C 3 mA
T
j
MAX.
10 µA
Tj = 25 °C TYP. 2 µs
= 125 °C TYP. 50 µs
T
j
°C
2
S
Symbol Parameter Value Unit
R
Junction to case (DC) 3.8 °C/W
th(j-c)
2/5 Doc ID 022532 Rev 1